SEARCH · Engineering Papers

Results for “N”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 451 records · Page 25

All sources NASA NTRS DOE OSTI

NASA NTRS1980

Performance of the HIRS/2 instrument on TIROS-N

The High Resolution Infrared Radiation Sounder (HIRS/2) was developed and flown on the TIROS-N satellite as one means of obtaining atmospheric vertical profile information. The HIRS/2 receives visible and infrared spectrum radiation through a single telescope and selects 20 narrow radiation channels by means of a rotating filter wheel. A passive radiant cooler provides an operating temperature of 106.7 K for the HgCdTe and InSb detectors while the visible detector operates at instrument frame temperature. Low noise amplifiers and digital processing provide 13 bit data for spacecraft data multiplexing and transmission. The qualities of system performance that determine sounding capability are the dynamic range of data collection, the noise equivalent radiance of the system, the registration of the air columns sampled in each channel and the ability to upgrade the calibration of the instrument to maintain the performance standard throughout life. The basic features, operating characteristics and performance of the instrument in test are described. Early orbital information from the TIROS-N launched on October 13, 1978 is given and some observations on system quality are made.

Koenig, E. W.↗

NASA NTRS1981

Annealing and anomalous high-energy electron irradiation effects in low-cost silicon N+P solar cells

Silicon solar cells of N(+)P type were subjected to 1 MeV electron irradiation (up to 10 to the 16th electrons/sq cm) and then annealed at 450 C for 20 min or annealed with no electron irradiation. Electron irradiation resulted in a degradation of longer wavelength cell response, but produced a marked enhancement of response at shorter wavelengths with a peak change of 40% at 0.44 microns. Subsequent thermal anneal at 450 C reduced the long-wavelength degradation, but enhancement at shorter wavelengths persisted. Excitation at the shorter wavelengths was in the N(+)-diffused layer and in the junction region of the cell. Anneal of unirradiated cells produced shorter-wavelength enhancement with a similar peaking at 0.44 microns, but with a relative change of only 20%. More enhancement was produced in the longer wavelength region (up to 0.8 microns). These effects in the different cell regions are explained by a decrease in the interstitial oxygen-impurity complexes (deep recombination levels) and the formation of substantial oxygen-silicon vacancy centers (donors).

Garlick, G. F. J.↗

NASA NTRS1981

A complete X-ray sample of the high latitude sky from HEAO-1 A-2: log N lo S and luminosity functions

An experiment was performed in which a complete X-ray survey of the 8.2 steradians of the sky at galactic latitudes where the absolute value of b is 20 deg down to a limiting sensitivity of 3.1 x ten to the minus 11th power ergs/sq cm sec in the 2-10 keV band. Of the 85 detected sources 17 were identified with galactic objects, 61 were identified with extragalactic objects, and 7 remain unidentified. The log N - log S relation for the non-galactic objects is well fit by the Euclidean relationship. The X-ray spectra of these objects were used to construct log N - log S in physical units. The complete sample of identified sources was used to construct X-ray luminosity functions, using the absolute maximum likelihood method, for clusters galaxies and active galactic nuclei.

Piccinotti, G.↗

NASA NTRS1982

Tribological characteristics of nitrogen (N+) implanted iron

The effect of implantation of nitrogen ions (1.5 MeV) on the friction and wear characteristics of pure ion sliding against M-50 steel (unimplanted) was studied in a pin-on-disk sliding friction apparatus. Test conditions included room temperature (25 C), a dry air atmosphere, a load of 1/2 kg (4.9 N), sliding velocities of 0.043 to 0.078 m/sec (15 to 25 rpm), a pure hydrocarbon lubricant (n-hexadecane), or a U.S.P. mineral oil and nitrogen ion implantation doses of 5x10 to the 15th power and 5x10 to the 17th power ions/sq cm. No differences in wear rates were observed in the low dose experiments. In the high dose experiments, small reductions in initial (40 percent) and steady state (20 percent) wear rates were observed for nitrogen implanted iron riders as compared with unimplanted controls. No differences in average friction coefficients were noted for either dose. Auger electron spectroscopy combined with argon ion bombardment revealed a subsurface Gaussian nitrogen distribution with a maximum concentration of 6 atomic percent at a depth of 0.8 microns. Similar analysis within the wear scar of an implanted rider after 20 microns of wear yielded only background nitrogen concentration. No inward migration of nitrogen ions was observed.

Jones, W. R.↗

NASA NTRS1981

Formation of pyrophosphate, tripolyphosphate, and phosphorylimidazole with the thioester, N, S-diacetylcysteamine, as the condensing agent

The formation of pyrophosphate, tripolyphosphate and phosphorylimidazole from orthophosphate in the presence of the thioester N, S-diacetylcysteamine is reported. Reactions performed with 0.20 M orthophosphate and 0.20 M N, S-diacetylcysteamine in 0.40 M imidazole under drying conditions at 50 C yielded pyrophosphate and tripolyphosphate after six days in the presence and absence of divalent metal ions. Reactions carried out at ambient temperature yielded phosphorylimidazole in the presence or absence of 0.05 M MgCl2, phosphorylimidazole and pyrophosphate in the presence of 0.05 M CaCl2, and pyrophosphate and tripolyphosphate in the presence of 0.15 M CaCl2. Such reactions represent potential pathways for the formation of energy-rich compounds providing free energy for use in prebiotic biopolymer synthesis.

Weber, A. L.↗

NASA NTRS1982

Carbon isotopic ratios in some low-delta N-15 lunar breccias

Lunar soil breccias 10018, 79035 and 79135 were analyzed for carbon and nitrogen contents and isotopic compositions by vacuum pyrolysis, with a 500 C pre-combustion step in some cases. The combustion was used to remove carbon of terrestrial origin. Nitrogen isotopic ratios for the breccias are very low and are in agreement with results in the literature. Nitrogen yields in two cases were lower than literature values, a result attributable to heterogeneous mixing of implanted and implantation-free components in the breccias. Carbon isotopic ratios were found to be low in these breccias, even when reasonable account is taken of terrestrial carbon contamination. The results are consistent with the idea that low-delta N-15 values in lunar soils and breccias are accompanied by low-delta C-13 values, and imply that any secular variation which occurred in the delta N-15 of nitrogen implanted in lunar soils was accompanied by a similar but smaller variation in the delta C-13 of implanted carbon.

Becker, R. H.↗

NASA NTRS1982

Electrical properties of multi p-n junction devices

The electrical properties of multi p-n junction devices are analyzed. It is found that this type of device possesses bistable characteristics similar to that of a Shockley diode and thus provides an alternative realization of devices for switching applications. The inherently greater current gains involved in the operations of such a device yield in principle higher breakover voltages and higher holding currents. Furthermore, the incorporation of heterostructures in this device introduces a new degree of freedom in tailoring their switching characteristics. Multi p-n heterojunction devices operating as SCR lasers were fabricated, and the experimental results are presented.

Katz, J.↗

NASA NTRS1983

Studies of flows through N-sequential orifices

Critical mass flux and axial pressure profile data for fluid nitrogen are presented for N = 20, 15, 10, and 7 N-sequential orifice inlet configurations uniformly spaced at 15.5 cm. These data correlate well over a wide range in reduced temperature (0.7 T sub r,o ambient) and reduced pressure (to P sub r = 2) and are in general agreement with studies of one to four inlets and labyrinth seal gas data for 33 tooth equivalent sequential inlets. Experimental and theoretical agreement is good for liquid and gas critical mass flux.

Hendricks, R. C.↗

NASA NTRS1983

N-person differential games. Part 1: Duality-finite element methods

The duality approach, which is motivated by computational needs and is done by introducing N + 1 Language multipliers is addressed. For N-person linear quadratic games, the primal min-max problem is shown to be equivalent to the dual min-max problem.

Chen, G.↗

NASA NTRS1982

Simple phenomenological modeling of transition-region capacitance of forward-biased p-n junction diodes and transistor diodes

The derivation of a simple expression for the capacitance C(V) associated with the transition region of a p-n junction under a forward bias is derived by phenomenological reasoning. The treatment of C(V) is based on the conventional Shockley equations, and simpler expressions for C(V) result that are in general accord with the previous analytical and numerical results. C(V) consists of two components resulting from changes in majority carrier concentration and from free hole and electron accumulation in the space-charge region. The space-charge region is conceived as the intrinsic region of an n-i-p structure for a space-charge region markedly wider than the extrinsic Debye lengths at its edges. This region is excited in the sense that the forward bias creates hole and electron densities orders of magnitude larger than those in equilibrium. The recent Shirts-Gordon (1979) modeling of the space-charge region using a dielectric response function is contrasted with the more conventional Schottky-Shockley modeling.

Lindholm, F. A.↗

NASA NTRS1983

The ultraviolet spectra of three N-type carbon stars

The paper reports the successful detection of the ultraviolet spectra of three N-type carbon stars: BL Ori, TX Psc, and T Ind. Exposures of approximately 2-3 hours with the LWR camera of the IUE Satellite at low dispersion were necessary to record the ultraviolet flux. The shortward extension of the photospheric continuum is well exposed down to about 2800 A, with strong molecular and atomic absorption features. The spectrum appears not to be seriously affected by the unknown opacity source which blankets N stars (especially redder ones) in the violet. Emission lines of Mg II (h and k) and C II (2325 A) are conspicuous, indicating the presence of chromospheres in the stars. The ratios of integrated fluxes in the Mg II lines and C II lines to bolometric flux are respectively much smaller and slightly smaller than values observed in oxygen-rich M giants and supergiants.

Johnson, H. R.↗

NASA NTRS1983

Tribological characteristics of nitrogen (N+) implanted iron

Jones, W. R., Jr.↗

NASA NTRS1983

Relative quantum yield of I-asterisk(2P1/2) in the tunable laser UV photodissociation of i-C3F7I and n-C3F7I - Effect of temperature and exciplex emission

Wavelength-specific relative quantum yields of metastable I from pulsed laser photodissociation of i-C3F7I and n-C3F7I in the range 265-336 nm are determined by measuring the time-resolved infrared emission from the atomic I(P-2(1/2) P-2(3/2) transition. It is shown that although this yield appears to be unity from 265 to 298 nm, it decreases dramatically at longer wavelengths. Values are also reported for the enhancement of emission from metastable I due to exciplex formation at several temperatures. The exciplex formation emission increases linearly with parent gas pressure, but decreases with increasing temperature. Absorption spectra of i- and n-C3F7I between 303 and 497 K are presented, and the effect of temperature on the quantum yields at selected wavelengths greater than 300 nm, where increasing the temperature enhances the absorption considerably, are given. The results are discussed in regard to the development of solar-pumped iodine lasers.

Smedley, J. E.↗

NASA NTRS1983

Studies of flows through N-sequential orifices

Critical mass flux and axial pressure profile data for fluid nitrogen are presented for N = 20, 15, 10, and 7 N-sequential-orifice-inlet configurations uniformly spaced at 15.5 cm. These data correlate well over a wide range in reduced temperature and reduced pressure, and are in general agreement with previous studies of one to four inlets. Experimental and theoretical agreement is good for liquid and gas critical mass flux, but inconclusive in the near thermodynamic critical regions.

Hendricks, R. C.↗

NASA NTRS1983

Thin N-I-P radiation resistant solar cells

Several sets of N-I-P sola cells were fabricated from high resistivity silicon to test the effectiveness of various methods for hardening these devices against radiation. Different substrate materials were used to provide information on the effects of dopant concentration, silicon type, and the presence of oxygen. In some cells, P-type float-zone refined silicon of 800, 8000 and 15,000 omega-cm resistivity was used to provide a basis for studying resistivity and purity effects. In other cells, N-type silicon (approximately 800 omega-cm) was used to allow a comparison of dopant type. Oxygen-rich, crucible-grown, silicon (approximately 100 omega-cm, p-type) will provide information on purity effects and defect gettering. Lithium was introduced into different types of silicon to determine if mobile ions can reduce radiation induced defects in high resistivity material. Thin cells (2 mil) were fabricated to study the effects of cell thickness and carrier injection on radiation damage. The electrical characteristics of the different sets of cells were measured, analyzed, and compared prior to shipment of the cells to NASA/Lewis for irradiation.

Meulenberg, A.↗

NASA NTRS1983

Synthesis of N-Substituted Silaneamines: Monomeric Precursors of Silicon Carbide-Nitride Fibers

Silanetriamines are prepared by the condensation of methyl or phenyl trichlorosilane with a primary amine. The amines used were methyl, n-propyl, n-butyl and allyl. The silaneamines were prepared by adding the chlorosilane to a solution of the amine in either petroleum ether or toluene. The compounds were purified by distillation and characterized by infrared and nuclear magnetic resonance spectroscopy.

Crouse, D. J.↗

NASA NTRS1984

Ohmic Versus Rectifying Contacts of Au to N-gaas by Ion Sputtering

Results of investigations of argon ion sputtering of heavily doped n-GaAs are compared with those obtained from studies of Au/low doping density n-GaAs contacts. The Au contact on Si-doped GaAs was nearly ohmic when the surface contamination (carbon and oxides) was reduced prior to deposition by chemical cleaning. However, when ion sputtering was used in situ to clean the surface, rectifying contact was produced whose barrier height varied with the energy of the sputtering ion. It was found that ion sputtering of GaAs doped to more than 3 x 10 to the 18th power/cu may be used to change ohmic contact to rectifying contacts. The barrier height may be changed by changing the ion energy. The behavior results from the sputter creation of deep level acceptor states at the GaAs surface. Annealing after sputtering can restore the contact to nearly an ohmic character.

Wang, Y. X.↗

NASA NTRS1984

The effects of lithium counterdoping on radiation damage and annealing in n(+)p silicon solar cells

Boron-doped silicon n(+)p solar cells were counterdoped with lithium by ion implantation and the resultant n(+)p cells irradiated by 1 MeV electrons. Performance parameters were determined as a function of fluence and a deep level transient spectroscopy (DLTS) study was conducted. The lithium counterdoped cells exhibited significantly increased radiation resistance when compared to boron doped control cells. Isochronal annealing studies of cell performance indicate that significant annealing occurs at 100 C. Isochronal annealing of the deep level defects showed a correlation between a single defect at E sub v + 0.43 eV and the annealing behavior of short circuit current in the counterdoped cells. The annealing behavior was controlled by dissociation and recombination of this defect. The DLTS studies showed that counterdoping with lithium eliminated three deep level defects and resulted in three new defects. The increased radiation resistance of the counterdoped cells is due to the interaction of lithium with oxygen, single vacancies and divacancies. The lithium-oxygen interaction is the most effective in contributing to the increased radiation resistance.

Weinberg, I.↗