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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 451 records · Page 25

Engineering information on an Analog Signal to Discrete Time Interval Converter (ASDT-IC)

An electronic control system for nondissipative dc power converters is presented which improves (1) the routinely attainable static output voltage accuracy to the order of + or - 1% for ambient temperatures from -55 to 100 C and (2) the dynamic stability by utilizing approximately one tenth of the feedback gain needed otherwise. Performance is due to a functional philosophy of deterministic pulse modulation based on pulse area control and to an autocompensated signal processing principle. The system can be implemented with commercially available unselected components.

Schwarz, F. C.↗

Radio observations of IC 434

Continuum radio emission and hydrogen recombination-line emission were measured at 2.37 GHz with the 64-m antenna at Goldstone, California. The radio emission has the same general distribution as the optical nebula. The radial velocity of the nebula agrees with that of the adjacent dust cloud L 1630. The electron temperature is estimated to be approximately 7000 K. The excitation of the nebula is compared with current estimates of the ionizing flux from the exciting star, sigma Orionis.

Kuiper, T. B. H.↗

Curve tracer checks CMOS IC's

Conventional transistor curve tracer can speed up failure analysis of CMOS integrated circuits by displaying transfer characteristics while device is subjected to vibration or environmental testing. Failures that show up as change in threshold voltage or transfer characteristics are quickly detected.

Kizer, F.↗

Simple tool removes IC flat packs

Handtool has bifurcated handle that can be tightened so that clamping head grips pack securely. Tool easily removes hybrid integrated-ciruit flat packs from printed-wiring boards. It does not damage circuit or board; thus, board can be reused with replacement circuit, and old circuit can be analyzed for faults and, if possible, repaired.

Eggebeen, J.↗

IC implementation of crossbar switches

Basic switching-element configuration can be expanded to more complex networks by coupling basic building blocks in appropriate way. In all cases, binary addressing of input and output ports is used.

Anderson, T. O.↗

Digital correlator with fewer IC's

Digital correlator requires only few integrated circuits to determine synchronization of two 24-bit digital words. Circuit is easily reduced or expanded to accommodate shorter or longer words and can be utilized in industrial and commercial data processing and telecommunications.

Apple, G. G.↗

Multiple-sample holder for IC testing

Carrousel tray speeds up testing process by feeding mass spectrometer up to 12 sealed integrated circuit packages in rapid succession for analysis of contaminants and total gas composition.

Haack, R. F.↗

A complementary DMOS-VMOS IC structure

A new complementary MOS structure has been fabricated consisting of a p-channel DMOS transistor and an n-channel double-diffused VMOS transistor. The transconductance of each transistor was between 0.85-0.98 of the theoretical transconductance. The threshold voltages have been adjusted by either ion implantation or by adjusting the diffusion profiles. The inverter operation is similar to that of standard CMOS.

Jhabvala, M.↗

Remote manipulator for IC wafers

Mechanical manipulator automatically loads, transports, and unloads silicon wafers between processing stations in large-scale integrated-circuit fabrication facility at Marshall Space Flight Center thus eliminating need for human opeators at various stages in processing cycle. It also reduces possibility of wafer contamination.

Hudgins, J. L.↗

Quality control during IC processing

Manual gives detailed test procedures for controlling silicon-wafer processing in manufacture of integrated circuits. Included among 43 test procedures are: ionic, bacterial, and solids contamination of high-purity water needed for wafer processing; crystallographic reflection, purity, and orientation; substrate dimensions and finish; thickness of deposited epitaxial films; oxide quality; photoresist characteristics; pinholes in insulating layers; metallized adhesion; and quality of ohmic contact.

Source record↗

Stitch-bond parallel-gap welding for IC circuits

Stitch-bonded flatpacks are superior to soldered dual-in-lines where size, weight, and reliability are important. Results should interest designers of packaging for complex high-reliability electronics, such as that used in security systems, industrial process control, and vehicle electronics.

Chvostal, P.↗

Multilayer metalization of MOS IC's

Modified ion-bombardment technqiue interconnects MOS circuit elements without affecting circuit parameters. Multilevel metalization involves: surface treatment prior to metalization; first metalization; metal pattern definition and photoresist removal; dielectric deposition; second metalization; and final dielectric deposition.

Bouldin, D. L.↗

Methanol decomposition bottoming cycle for IC engines

This paper presents the concept of methanol decomposition using engine exhaust heat, and examines its potential for use in the operation of passenger cars, diesel trucks, and diesel-electric locomotives. Energy economy improvements of 10-20% are calculated over the representative driving cycles without a net loss in power. Some reductions in exhaust emissions are also projected.

Purohit, G.↗