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At least 451 records · Page 25

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NASA NTRS1986

Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors

High-performance pseudomorphic In(y)Ga(1-y)As/Al0.15-Ga0.85As y = 0.05-0.2 MODFET's grown by MBE have been characterized at dc (300 and 77 K) and RF frequencies. Transconductances as high 310 and 380 mS/mm and drain currents as high as 290 and 310 mA/mm were obtained at 300 and 77 K, respectively, for 1-micron gate lengths and 3-micron source-drain spacing devices. Lack of persistent trapping effects, I-V collapse, and threshold voltage shifts observed with these devices are attributed to the use of low mole fraction Al(x)Ga(1-x)As while still maintaining two-dimensional electron gas concentrations of about 1.3 x to the 12th per sq cm. Detailed microwave S-parameter measurements indicate a current gain cut-off frequency of 24.5 GHz when y = 0.20, which is as much as 100 percent better than similar GaAs/AlGaAs MODFET structures, and a maximum frequency of oscillation of 40 GHz.

Ketterson, Andrew A.↗

NASA NTRS1988

Nd isotopes and crustal growth rate

Sm/Nd isotopic constraints on crustal growth is discussed. In order to constrain Sm/Nd fractionation between continental crust and depleted mantle, an extensive data base of isotopic measurements (assumed to be adequately representative of continental crust) was compiled. The results imply that the evolution of depleted mantles was roughly linear, with no major discontinuities over the course of geologic time. This is different from other determinations of depleting mantle evolution, which show nonlinear behavior. The Sm/Nd evolution lines for continental crust and depleted mantle intersect between 3.8 to 4.0 Ga, which may indicate that the onset of continental growth was later than 4.5 Ga. A mathematical model is described, the results of which imply that time integrated crustal additions from the mantle are about 1.8 to 2.5 cu km/a, whereas crustal subtractions by sediment recycling are about 0.6 to 1.5 cu km/a. This results in a net time integrated crustal growth rate of about 1 cu km/a, which is similar to present day rates determined, for example, by Reymer and Schubert.

Albarede, F.↗

NASA NTRS1988

Growth of the continental crust: A planetary-mantle perspective

The lack of earth rocks older than about 3.8 Ga is frequently interpreted as evidence that the earth formed little or no subduction-resistant continental crust during the first 700 My of its history. Such models obviously imply that the pre-3.8 Ga earth was covered entirely or almost entirely by smoothly subducting oceanic crust. On the other hand, the thermal regime of the early earth probably tended to cause the oceanic crust at this time to be comparatively thin and comparatively mafic. The present earth is covered by about 50 percent oceanic crust, averaging about 7 km in thickness, and 41 percent continental crust, averaging roughly 40 km in thickness. Thus continentless-early-earth models would seem to imply a total mass of crust less than 1/3 that of the present day earth. Possible explanations are examined.

Warren, Paul H.↗

NASA NTRS1987

Performance characteristics of InGaAs/GaAs and GaAs/InGaAlAs coherently strained superlattice photodiodes

The properties of In(0.24)Ga(0.76)As/GaAs and GaAs/In(0.05)Ga(0.58)Al(0.37)As superlattice photodiodes grown by molecular beam epitaxy have been investigated. From the temporal response characteristics, deconvolved rise times about 60-100 ps are obtained. The measured responsivities of the photodiodes with dark currents of 5-10 nA at 10 V are about 0.4 A/W, which correspond to peak external quantum efficiencies of about 60 percent. These results indicate that very high performance photodiodes can be realized with strained layers.

Das, Utpal↗

NASA NTRS1988

Trace element partitioning between taenite and kamacite - Relationship to the cooling rates of iron meteorites

Instrumental neutron activation analysis (INAA) was used to determine Ni, Co, Cu, Ga, As, Au, W, Re and Ir in taenite lamellae isolated by acid dissolution from eight iron meteorites from groups IA, IIIAB and IVA. Taenite is enriched in Ni, Cu, Ga, As, Au, W, Re and Ir relative to kamacite, whereas taenite is depleted in Co. Taenite/kamacite partition ratios in slowly cooled IAB meteorites are farther from unity than those in rapidly cooled IVA meteorites. Taenite/kamacite partition ratios for Cu, Ir, Au and Co may be sensitive cooling rate indicators.

Rasmussen, Kaare L.↗

NASA NTRS1988

Geochemistry of amphibolites from the Kolar Schist Belt

How the Nd isotope data suggest that the amphibolites from the schist belt were derived from long-term depleted mantle sources at about 2.7 Ga is described. Trace element and Pb isotope data from the amphibolites also suggest that the sources for the amphibolites on the western and eastern sides of the narrow schist belt were derived from different sources. The Pb data from one outcrop of the central tholeiitic amphibolites lies on a 2.7 Ga isochron with a low model. The other amphibolites (W komatiitic, E komatiitic, and E tholeiitic) do not define isochrons, but suggest that they were derived from sources with distinct histories of U/Pb. There is some suggestion that the E komatiitic amphibolites may have been contaminated by fluids carrying Pb from a long-term, high U/Pb source, such as the old granitic crust on the west side of the schist belt. This is consistent with published galena Pb isotope data from the ore lodes within the belt, which also show a history of long-term U/Pb enrichment.

Balakrishnan, S.↗

NASA NTRS1988

Present status of the geochronology of the early Precambrian of South India

The present status of Precambrian geochronology of South India was summarized. Support was offered for Raith's conclusion of an extensive 3.3 to 3.4-Ga tonalite-forming event. Evidence that the Sargur supracrustal sequence predates this event, however, remains equivocal. The only reliably dated supracrustal rocks are the similar to 3.0-Ga Chitradurga acid volcanics, and these are separated from the older Bababudan supracrustals by a major gneiss-forming event. A major unsolved problem relates to the timing of the Sargur supracrustals in relation to the basal units of the Dharwar succession. An appeal was made for more geochronological work on South Indian samples.

Gopalan, K.↗

NASA NTRS1988

Low- to high-grade metamorphic transition in the Southern part of Karnataka Nucleus, India

The southern part of Karnataka Nucleus has a strong imprint of 2.6 Ga metamorphism. This has affected the schist belts of Karnataka Nucleus from greenschist to upper amphibolite facies. The higher grades of metamorphism are in the Holenarasipur, Nuggihalli, Krishnarajpet, Hadnur and Melkote schist belts. In the high grade transition zone, around Sargur only keels of schist belts are preserved and occur as highly dismembered, disconnected belts with the top and bottom of the stratigraphic column obliterated due to high grade metamorphism and accompanying migmatization. Absence of high-grade metamorphic minerals in the sediments of the Dharwar schist belts supports the contention that high grade metamorphism post-dated the Dharwar sedimentation and occurred around 2.6 Ga ago. Sargur type metamorphism occurred at upper crustal levels and charnockite type metamorphism occurred in lower crustal levels. The P-T conditions for the mineral assemblage in metapelites of Sargur Group indicate burial depths up to at least 15 km suggesting that they were subducted and later obducted during the development of Early Proterozoic Mobile Belt along the southern border of the Karnataka Nucleus.

Naqvi, S. M.↗

NASA NTRS1988

Simulation of GaAs cluster formation on GaAs(00-1), AlAs(00-1), Si(001), and As1/Si(001) surfaces

Recently developed semiempirical potential energy functions for the Ga-As-Si and Ga-As-Al systems have been applied here to determine the excess formation energy for GaAs clusters on GaAs(00-1), AlAs(00-1), Si(001), and one atomic layer As-covered Si(001) substrates as a function of cluster size and cluster shape by the Monte Carlo technique. Pyramidal type ledges on the GaAs clusters are found to be the favored ledge for the first three layers while an inverted-pyramidal type ledge is also favored in certain cases for the As1/Si(001) substrate. Cluster formation at ledges is compared with cluster formation on a flat terrace for the Si(001) and the As1/Si(001) substrates.

Choi, D. K.↗

NASA NTRS1988

The age of ferroan anorthosite 60025 - Oldest crust on a young moon?

Sm-Nd isotopic data for mineral separates from the ferroan anorthosite 60025, which define a precise isochron of 4.44 + or - 0.02 Ga age, are discussed. This age is about 110 Myr younger than the formation of the first large solid objects in the solar nebula. If the moon is as old as the oldest meteorite, the relatively young age determined for 60025 implies that the magma ocean did not form synchronously with lunar formation or that the magma ocean required over 100 Myr to reach the stage of ferroan anorthosite crystallization. It is proposed that the accumulated body of radiogenic isotope data for lunar rocks permit the moon to be as young as 4.44-4.51 Ga. This is consistent with the idea that the materials that make up the moon were derived from the earth.

Carlson, Richard W.↗

NASA NTRS1988

Isotopic constraints on crustal growth and recycling

The Sm-Nd isotopic data on clastic and chemical sediments are used with the present-day age distribution of continental crustal rocks to estimate the rates of crustal accretion, growth and recycling throughout earth's history. A new method for interpreting Nd model ages on both chemical and clastic sediments is proposed. A general relationship is derived between the mean crustal residence time of material recycled from the crust to the mantle (i.e., sediments), the mean age of the crust, and the crustal growth and recycling rates. This relationship takes into account the fact that the age distribution of material in the continental crust is generally different from the age distribution of material recycled into the mantle. The episodic nature of the present-day age distribution in crustal rocks results in similar episodicity in the accretion and recycling rates. The results suggest that by about 3.8 Ga ago, about 40 percent of the present continental volume was present. Recycling rates were extremely high 3-4 Ga ago and declined rapidly to an insignificant value of about 0.1 cu km/a during most of the Phanerozoic. The Nd model age pattern on sediments suggests a fairly high rate of growth during the Phanerozoic.

Jacobsen, Stein B.↗

NASA NTRS1989

Calculation of the electron wave function in a graded-channel double-heterojunction modulation-doped field-effect transistor

Three double-heterojunction modulation-doped field-effect transistor structures with different channel composition are investigated theoretically. All of these transistors have an In(x)Ga(1-x)As channel sandwiched between two doped Al(0.3)Ga(0.7)As barriers with undoped spacer layers. In one of the structures, x varies from 0 from either heterojunction to 0.15 at the center of the channel quadratically; in the other two, constant values of x of 0 and 0.15 are used. The Poisson and Schroedinger equations are solved self-consistently for the electron wave function in all three cases. The results showed that the two-dimensional electron gas (2DEG) concentration in the channel of the quadratically graded structure is higher than the x = 0 one and slightly lower than the x = 0.15 one, and the mean distance of the 2DEG is closer to the center of the channel for this transistor than the other two. These two effects have important implications on the electron mobility in the channel.

Mui, D. S. L.↗

NASA NTRS1989

Extrinsic germanium Blocked Impurity Bank (BIB) detectors

Ge:Ga blocked-impurity-band (BIB) detectors with long wavelength thresholds greater than 190 microns and peak quantum efficiencies of 4 percent, at an operating temperature of 1.8 K, have been fabricated. These proof of concept devices consist of a high purity germanium blocking layer epitaxially grown on a Ga-doped Ge substrate. This demonstration of BIB behavior in germanium enables the development of far infrared detector arrays similar to the current silicon-based devices. Present efforts are focussed on improving the chemical vapor deposition process used to create the blocking layer and on the lithographic processing required to produce monolithic detector arrays in germanium. Approaches to test the impurity levels in both the blocking and active layers are considered.

Krabach, Timothy N.↗

NASA NTRS1989

ISO/LWS: Detector status

The aim of the long wavelength spectrometer (LWS) of the Infrared Space Observatory is to perform spectrometry in the wavelength range 45 to 200 microns using two resolution modes. The resolution will be around 200 in the medium resolution mode while it will reach 10(exp 4) in the high resolution mode. The sensitivity of this instrument will be close to 10(exp -18) W/sq. root Hz. A schematic view of the focal plane unit is presented. The detectors divide the wavelength range into ten spectral channels. The spectral range and position of each detector is indicated. Each detector will cover approximately a spectral bandwidth sufficient to allow for a 50 percent redundancy in the case of detector failure. There are three types of detectors. SW1 is a Ge:Be photoconductor covering the 45 to 55 micron region. LW1, SW2, SW3, SW4, SW5 are unstressed Ge:Ga photoconductors which cover the 50 to 120 micron region. LW2, LW3, LW4, LW5 are uniaxially stressed Ge:GA photoconductors covering the range from 100 to 200 microns. The stress applied to each detector will be adjusted in order to get the peak response in the corresponding wavelength range, and to minimize the dark current of the shorter wavelength stressed detectors. Stressed and unstressed detectors are located alternatively in order to receive the first and second order of the diffracted beam.

Lenaour, C.↗

NASA NTRS1990

Photoreflectance for in-situ characterization of MOCVD growth of semiconductors under micro-gravity conditions

A contactless electromodulation technique of photoreflectance (PR) was developed for in-situ monitoring of metal-organic chemical vapor deposition (MOCVD) semiconductor growth for micro-gravity applications. PR can be employed in a real MOCVD reactor including rotating substrate (approximately 500 rev/min) in flowing gases and through a diffuser plate. Measurements on GaAs and Ga(0.82)Al(0.18)As were made up to 690 C. The direct band gaps of In(x)Ga(1-x)As (x = 0.07 and 0.16) were evaluated up to 600 C. In order to address the question of real time measurement, the spectra of the direct gap of GaAs at 650 C was obtained in 30 seconds and 15 seconds seems feasible.

Pollak, Fred H.↗

NASA NTRS1990

Mobile transporter path planning

The use of a genetic algorithm (GA) for solving the mobile transporter path planning problem is investigated. The mobile transporter is a traveling robotic vehicle proposed for the space station which must be able to reach any point of the structure autonomously. Elements of the genetic algorithm are explored in both a theoretical and experimental sense. Specifically, double crossover, greedy crossover, and tournament selection techniques are examined. Additionally, the use of local optimization techniques working in concert with the GA are also explored. Recent developments in genetic algorithm theory are shown to be particularly effective in a path planning problem domain, though problem areas can be cited which require more research.

Baffes, Paul↗

NASA NTRS1989

Optically addressed spatial light modulators by MBE-grown nipi MQW structures

Promising approaches for achieving optically addressed spatial light modulators (O-SLMs) are investigated based on combining nipi and multiple quantum well structures. Theoretical aspects of photooptic effects achievable in such structures are treated. Test structures are grown by molecular beam epitaxy using two material systems. (In,Ga)As/GaAs and (Al,Ga)As/GaAs. Experiments show large optically controlled modulation of the absorption coefficient in the quantum well layers, a log power dependence on the control signal, millisecond and shorter time response, and generally predictable behavior. The results are encouraging for several different O-SLM device structures proposed.

Maserjian, Joseph↗

NASA NTRS1990

U-Th-Pb systematics of the Estherville mesosiderite

Results are presented on a detailed U-Th-Pb systematics of the Estherville mososiderite, which was performed in a study involving stepwise leaching experiments. The Pb-Pb internal 'isochrons' for Estherville yielded ages of 4556 + or - 35 Ma, 4506 + or - 75 Ma, and 4422 + or - 50 Ma, indicating that the silicate fraction of the Estherville mesosiderite is very heterogeneous and was formed early in the solar system history. Results clearly identifies the Pb-Pb isochron as a mixing line. The U-Pb lower-intercept ages could be divided into two groups: (1) around 3 Ga, and likely related to the 3.6 Ga heating event, and (2) close to 0 Ma and to 62 Ma.

Brouxel, M.↗