SEARCH · Engineering Papers
Results for “GANs”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
GaN-Based, Ultra-Compact Power Conversion System for the PUFFER Autonomous Mobility Platform
No abstract provided
NASA Electronic Parts Assurance Group (NEPAG): Preliminary ESD Investigation of Commercial GaN HEMT
No abstract provided
Demonstration of a Switched Wideband GaN High-Power Amplifier for Future Space Missions
In this paper, we present the architecture of a Ka-band switched, wideband, high efficiency gallium nitride based high-power amplifier. The architecture is validated by characterizing the driver and power amplifier chain. The measured results include Pout, Gain, PAE, RMS EVM for QPSK, Offset-QPSK, 8PSK, 16APSK, and 16QAM constellations, 3rd order IMD products, and noise figure. The wide bandwidth and high output power of the amplifier will enable future user terminals to interoperate between multiple service provider’s space networks.
Demonstration of a Switched Wideband GaN High-Power Amplifier for Future Space Missions
In this paper, we present the architecture of a Ka-band switched, wideband, high efficiency gallium nitride based high-power amplifier. The architecture is validated by characterizing the driver and power amplifier chain. The measured results include Pout, Gain, PAE, RMS EVM for QPSK, Offset-QPSK, 8PSK, 16APSK, and 16QAM constellations, 3rd order IMD products, noise figure, and added phase noise. The wide bandwidth and high output power of the amplifier will enable future user terminals to interoperate between multiple service provider’s space networks.
Demonstration of a Switched Wideband GaN High-Power Amplifier for Future Space Missions
In this paper, we present the architecture of a Ka-band switched, wideband, high efficiency gallium nitride based high-power amplifier. The architecture is validated by characterizing the driver and power amplifier chain. The measured results include Pout, Gain, PAE, RMS EVM for QPSK, Offset-QPSK, 8PSK, 16APSK, and 16QAM constellations, 3rd order IMD products, noise figure, and added phase noise. The wide bandwidth and high output power of the amplifier will enable future user terminals to interoperate between multiple service provider’s space networks.
Collaborative Evaluation of GaN FETs and Gate Drivers
Explore the source record for details and available documents.
Benefits of Ka-Band GaN MMIC High Power Amplifiers With Wide Bandwidth and High Spectral/Power Added Efficiencies for Cognitive Radio Platforms
Explore the source record for details and available documents.
Demonstration of GaN HEMT MMIC High-Power Amplifier for Lunar Proximity Communications
Explore the source record for details and available documents.
Impurity incorporation and diffusion from regrowth interfaces in N-polar GaN photocathodes and the impact on quantum efficiency
Explore the source record for details and available documents.
Effect of N2* and N on GaN nanocolumns grown on Si(111) by molecular beam epitaxy
Explore the source record for details and available documents.
Thermionic field emission in GaN nanoFET Schottky barriers
Explore the source record for details and available documents.
A microfabricated sun sensor using GaN-on-sapphire ultraviolet photodetector arrays
Explore the source record for details and available documents.
Design and Validation of a 20-kVA, Fully Cryogenic, Two-Level GaN-Based Current Source Inverter for Full Electric Aircrafts
Explore the source record for details and available documents.
Large-area fabrication of nanometer-scale features on GaN using e-beam lithography
Explore the source record for details and available documents.
Electro-thermal Simulation and Performance Comparison of 1.2 kV 10 A Vertical GaN MOSFETs.
Abstract not provided.