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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 451 records · Page 25
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Electronic structure manipulation via composition tuning for the development of highly conductive and acid-stable oxides

Exploring materials that simultaneously possess high conductivity and electrochemical stability is critical for various energy-conversion applications. In this study, our combined computations and experiments suggest the Mg–Ti–O chemical space for novel ternary oxide compounds offering high electrical conductivity and corrosion stability in acidic conditions to be potentially used as catalyst supporter of polymer electrolyte membrane fuel cells. High electrical conductivity (6.09 × 10 -1 S cm -1 ) is achieved at room temperature by tuning the chemical composition of Mg 1-x Ti 2+x O 5 while still maintaining good corrosion stability (1.2 × 10 -4 mA cm -2 after six days) in acidic conditions. Furthermore, we discover that a reducing gas environment during the synthesis increases the Ti solubility in Mg 1-x Ti 2+x O 5 with a reduced valence state of Ti, thus resulting in high conductivity.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Overlap junctions for superconducting quantum electronics and amplifiers

Due to their unique properties as lossless, nonlinear circuit elements, Josephson junctions lie at the heart of superconducting quantum information processing. Previously, we demonstrated a two-layer, submicrometer-scale overlap junction fabrication process suitable for qubits with long coherence times. Here, we extend the overlap junction fabrication process to micrometer-scale junctions. This allows us to fabricate other superconducting quantum devices. For example, we demonstrate an overlap junction-based Josephson parametric amplifier that uses only two layers. This efficient fabrication process yields frequency-tunable devices with negligible insertion loss, a gain of ∼30 dB, and quantum limited noise performance. Compared to other processes, the overlap junction allows for fabrication with minimal infrastructure, high yield, and state-of-the-art device performance.

Bal, Mustafa (ORCID:0000000307516774)↗