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At least 451 records · Page 25
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Study of phase decoherence in GeSn (8%) through measurements of the weak antilocalization effect

Alloying germanium with tin offers a means to modulate germanium's electronic structure, enabling a greater degree of control over quantum properties such as the retention of the phase or spin of the electron wave. However, the extent to which the presence of high dopant concentrations in GeSn alters these quantum behaviors is poorly understood. Here, we investigate the role of dopant concentrations on phase coherence through measurements of the weak antilocalization (WAL) effect at temperatures between 30 mK and 10 K in p-GeSn (8%) thin films, which were doped to a series of carrier densities on the order of 10 12 cm –2 . Phase coherence and spin–orbit lengths were extracted from the magnetoconductivities using the 2D Hikami–Larkin–Nagaoka model. Phase coherence lengths peaked at 577, 593, and 737 nm for the low-, mid-, and high-density samples, while upper limits on the spin–orbit lengths of less than 25 nm were relatively independent of carrier density and temperature. The phase coherence lengths increased as the temperature decreased but changed only minimally with carrier density, contrary to common models of temperature-dependent inelastic scattering. Saturation of the phase coherence lengths occurred below 600 mK. Based on these findings, intrinsically generated inelastic scattering mechanisms such as two-level systems or impurity band scattering likely contribute to phase decoherence in these alloys. Our results provide insight into the inelastic scattering mechanisms of GeSn, while suggesting a need for further investigation into phase decoherence mechanisms in doped group-IV alloys.

42 ENGINEERING↗
DOE OSTI2025

Arsenic activation and compensation in single crystal CdTe bilayers

In state-of-the art polycrystalline CdTe photovoltaics, group-V dopant activation is about 2%. Low activation can create electronic defects and lead to recombination and band tail losses. To develop methods to overcome this limitation, dopant activation was systematically investigated using molecular beam epitaxy (MBE) grown single crystal bilayers of As-doped CdTe on undoped CdTe. Results suggest multiple paths for improved As-activation in polycrystalline CdTe-based devices. It was found that the carrier concentration in this MBE material saturated at ∼3 × 1016 cm−3, with high levels (>50%) of As-activation possible. High activation could be achieved with a post-growth activation temperature of ∼450 °C, when the initial doping level was below the saturation level. However, at typical polycrystalline As incorporation levels (>5 × 1016 cm−3), the excess As is inactive or compensating, requiring elevated temperatures (500–600 °C) to achieve high activation. Oxygen in the annealing ambient was detrimental, while the effect of CdCl2 in the ambient is more case-dependent. A 575 °C activation anneal was combined with a 450 °C CdCl2 treatment to better understand the implications for polycrystalline CdTe. Interestingly, on highly doped samples, processes ending with a high temperature step displayed high activation, while those ending at 450 °C significantly reduced the carrier concentration (with or without CdCl2 in the ambient). Low activation can be restored with another high temperature anneal, allowing reproducible toggling between high and low activation based on the final temperature. Photoluminescence revealed the presence of donor–acceptor pairs in the low activation state that appear to be associated with a compensating defect.

14 SOLAR ENERGY↗
DOE OSTI2025

Epitaxial strain tuning of Er 3+ in ferroelectric thin films

Er 3+ color centers are promising candidates for quantum science and technology due to their long electron and nuclear spin coherence times, as well as their desirable emission wavelength. By selecting host materials with suitable, controllable properties, we introduce new parameters that can be used to tailor the Er 3+ emission spectrum. PbTiO 3 is a well-studied ferroelectric material with known methods of engineering different domain configurations through epitaxial strain. By distorting the structure of Er 3+ -doped PbTiO 3 thin films, we can manipulate the crystal fields around the Er 3+ dopant. This is resolved through changes in the Er 3+ resonant fluorescence spectra, tying the optical properties of the defect directly to the domain configurations of the ferroelectic matrix. Additionally, we are able to resolve a second set of peaks for films with in-plane ferroelectric polarization. We hypothesize these results to be due to either the Er 3+ substituting different sites of the PbTiO 3 crystal, differences in charges between the Er 3+ dopant and the original substituent ion, or selection rules. Systematically studying the relationship between the Er 3+ emission and the epitaxial strain of the ferroelectric matrix lays the pathway for future optical studies of spin manipulation by altering ferroelectric order parameters.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Electric-field-induced crossover of polarization reversal mechanisms in Al 1–x Sc x N ferroelectrics

Scandium-doped aluminum nitride, Al 1–x Sc x N, represents a new class of displacive ferroelectric materials with high polarization and sharp hysteresis along with high-temperature resilience, facile synthesizability and compatibility with standard CMOS fabrication techniques. The fundamental physics behind the transformation of unswitchable piezoelectric AlN into switchable Al–Sc–N ferroelectrics depends upon important atomic properties such as local structure, dopant distributions and the presence of competing mechanism of polarization switching in the presence of an applied electric-field that have not been understood. We computationally synthesize Al 1–x Sc x N to quantify the inhomogeneity of Sc distribution and phase segregation, and characterize its crystal and electronic structure as a function of Sc-doping. Nudged elastic band calculations of the potential energy surface and quantum molecular dynamics simulations of direct electric-field-driven ferroelectric switching reveal a crossover between two polarization reversal mechanisms—inhomogeneous nucleation-and-growth mechanism originating near Sc-rich regions in the limit of low applied fields and nucleation-limited-switching in the high-field regime. Finally, understanding polarization reversal pathways for these two mechanisms as well as the role of local Sc concentration on activation barriers provides design rules to identify other combinations of dopant elements, such as Zr, Mg etc. to synthesize superior AlN-based ferroelectric materials.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

P-type conductivity in Sn-doped Sb 2 Se 3

Abstract Antimony selenide (Sb 2 Se 3 ) is a promising absorber material for thin-film photovoltaics. However, certain areas of fundamental understanding of this material remain incomplete and this presents a barrier to further efficiency gains. In particular, recent studies have highlighted the role of majority carrier type and extrinsic doping in drastically changing the performance of high efficiency devices (Hobson et al 2020 Chem. Mater. 32 2621–30). Herein, Sn-doped Sb 2 Se 3 bulk crystals are shown to exhibit p-type conductivity using Hall effect and hot-probe measurements. The measured conductivities are higher than those achieved through native defects alone, but with a carrier density (up to 7.4 × 10 14 cm −3 ) several orders of magnitude smaller than the quantity of Sn included in the source material. Additionally, a combination of ultraviolet, x-ray and hard x-ray photoemission spectroscopies are employed to obtain a non-destructive depth profile of the valence band maximum, confirming p-type conductivity and indicating a majority carrier type inversion layer at the surface. Finally, these results are supported by density functional theory calculations of the defect formation energies in Sn-doped Sb 2 Se 3 , showing a possible limit on the carrier concentration achievable with Sn as a dopant. This study sheds light on the effectiveness of Sn as a p-type dopant in Sb 2 Se 3 and highlights avenues for further optimisation of doped Sb 2 Se 3 for solar energy devices.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Using Fourier-Plane Imaging Microscopy for Determining Transition-Dipole-Moment Orientations in Organic Light-Emitting Devices

Here, we use Fourier-plane imaging microscopy (FIM) to determine the transition-dipole-moment orientation in doped organic emissive thin films. The use of FIM enables precise, sensitive, and rapid measurement of dipole orientation in the emission layer of an organic light-emitting device (OLED). An optical model of a stratified birefringent multilayer is introduced for interpreting results obtained by FIM. Using the model, we determine the average orientation of transition-dipole-moment vectors of three phosphorescent dopant emitters. The dipole alignment measured by FIM quantitatively explains the difference in OLED efficiencies using these archetype dopant molecules. FIM provides a nondestructive tool to measure and ultimately improve the outcoupling efficiency of OLEDs and other light-emitting devices.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2024

Possible coexistence of magnetism and paramagnetic singularity in lightly Fe-doped WTe 2

Topological semimetals possess nodal or nodal-line phases where conduction and valence bands touch at points or lines in momentum space, respectively. Such band touching is symmetry protected and gives rise to exotic and interesting electronic properties. Coupling topological order with magnetism provides a platform for exploring time-reversal (TR) symmetry breaking topological physics, such as axion electrodynamics, inverse spin-galvanic effect, and the quantized anomalous Hall effect. The Weyl semimetal (WSM) requires breaking either TR symmetry or lattice inversion symmetry (I). By doping inversion-symmetry-broken WSM with magnetic dopants, one can expect to create a WSM with both symmetries breaking simultaneously. Here, structural, electrical, and magnetic properties of Fe x ⁢W 1–x Te 2 (x = 0 and 0.011) are reported. It is revealed that, with a small Fe doping concentration (x = 0.011), a ferromagnetism is induced at low temperature (<10 K). Scanning tunneling microscopy and spectroscopy measurements in Fe 0.011 ⁢W 0.989 ⁢Te 2 further reveal only substitution and no intercalated dopants being observed. The probabilities of the Fe substitutions at the two nonequivalent W sites are quantified with equal probability. The dl/dV point spectra indicates that the Fe substitution in WTe 2 manifests itself as electron doping regardless of doping sites. The results clearly reveal the possible coexistence of magnetism and Weyl points in the lightly Fe doped WTe2 at low temperature. Furthermore, this provides an ideal system for further study on the interplay between the topological Weyl points and the TR symmetry breaking.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Large inverse Faraday effect for Rydberg states of free atoms and isolated donors in semiconductors

We report on the induction of magnetization in Rydberg systems by means of the inverse Faraday effect and propose the appearance of the effect in two such systems: Rydberg atoms proper and shallow dopants in semiconductors. Rydberg atoms are characterized by a large orbital radius. This large radius gives such excited states a large angular moment, which when driven with circularly polarized light translates to a large effective magnetic field $\mathscr{B}$ eff . We calculate this effect to generate effective magnetic fields of O⁡(1⁢ µ⁢T)×($\frac{ω}{1THz}$) -1 ⁢ ($\frac{\mathscr{I}}{10Wcm^{-2}}$)⁢n 4 in the Rydberg states of atoms such as Rb and Cs for off-resonant photon beams with frequency ω and intensity $\mathscr{I}$ expressed in units of the denominators and n the principal quantum number. Additionally, terahertz spectroscopy of phosphorus-doped silicon reveals a large cross section for excitation of shallow dopants to Rydberg-like states, which even for small n have the potential to be driven similarly with circularly polarized light to produce an even larger magnetization. Our theoretical calculations estimate $\mathscr{B}$ eff as O⁡(10 2 T) for Si:P with a beam intensity of 10 8 Wcm -2 .

36 MATERIALS SCIENCE↗
DOE OSTI2021

Intrinsic and complex defect engineering of quasi-one-dimensional ribbons Sb 2 S 3 for photovoltaics performance

Sb 2 S 3 has attracted great attention recently as a prospective solar cell absorber material. In this work, intrinsic defects, dopants, and their complexes in Sb 2 S 3 are systematically investigated by using hybrid functional theory. V Sb and V S are dominant native defects and pin the Fermi level near the midgap, which is consistent with the high resistivity observed experimentally. Both V Sb and V S introduce deep levels inside the band gap, which can trap free carriers. Our calculated deep transition levels of V Sb and Sb S are consistent well with the results of the deep-level transient spectroscopy measurement. We further study dopants (including Cu, Ti, Zn, Br, and Cl) in Sb 2 S 3 and find that Zn and Br/Cl are shallow acceptors and donors, respectively, which may be used to control the carrier and trap densities in Sb 2 S 3 . In addition, the defect complexes, i.e., Cu(Zn) Sb +V S and Cl(Br) S +V Sb are also investigated. The interaction between the donor and acceptor defects makes the defect levels of complexes shallower and less detrimental to carrier transport.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

First-principles comparative study of Cr migration in O3 and O/P hybrid-phased NaCrO 2

In layered Na transition-metal (TM) oxides, TM migration usually occurs at highly charged states and severely deteriorates the capacity and reversibility. Meanwhile, the formation of hybrid phases with the intergrowth of octahedral (O-type) and prismatic (P-type) Na layers also takes place at highly charged states. These hybrid phases are often more stable than simple O3 or P3 stackings. However, little is known about the mechanism and impact of TM migration in these hybrid phases. In this work, a comparative first-principles study is performed to understand the connections between structural changes and Cr migration in layered O3 and hybrid-phased NaCrO 2 . After Cr migration, the hybrid-phased NaCrO 2 suffers from greater layer shrinkage than the O3 phase. Three factors affect the Cr migration energy E mig : the Na concentration, local 3D configurations, and 2D in-plane geometries. Low Na concentrations and certain local 3D configurations facilitate the Cr migration. The Cr migration barriers in both O3 and hybrid-phased NaCrO 2 are positively correlated with the Cr E mig . The Cr migration in 17 doped O3 and hybrid-phased NaCrO 2 is surveyed. In these doped NaCrO 2 , a more uniform distribution of the Cr–O bond lengths usually suggests suppressed Cr migration. Optimal dopants for suppressing Cr migration are identified by considering E mig for both Cr and the dopant. Finally, our comparative study on Cr migration in O3 and hybrid-phased NaCrO 2 reveals the significant role of hybrid-phased structures in the development of layered cathode materials.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Effect of doping on the phase stability and superconductivity in LaH 10

Here, we present a computational investigation into the effects of chemical doping with 15 different elements on phase stability and superconductivity in the LaH 10 structure. Most doping elements were found to induce softening of phonon modes, enhancing electron-phonon coupling and improving critical superconducting temperature while weakening dynamical stability. Unlike these dopants, Ce was found to extend the range of dynamical stability for LaH 10 by eliminating the Van Hove singularity near the Fermi level. The doped compound, La 0.75 Ce 0.25 H 10 , maintains high-temperature superconductivity. We also demonstrate that different Ce doping configurations in the LaH 10 structure have a minimal effect on energetic stability and electron-phonon coupling strength. Our findings suggest that Ce is a promising dopant to stabilize LaH 10 at lower pressures while preserving its high-temperature superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Effect of Near-Interface Compensation of CdSeTe Absorber Layers on Solar Cell Performance

Arsenic has been shown to be an effective p-type dopant of CdTe. However, challenges remain in the fabrication of high efficiency CdTe solar cells using As. As-doped CdTe is prone to self-compensation and observed accumulation of dopant atoms in CdTe near the interface with MgZnO (MZO) suggests that this could be occurring. In this study, we use SCAPS 1-D modeling software to investigate the effect of near-interface compensation. We consider three cases: shallow donors, deep recombination centers, and a thin layer of excess positive charge accumulation. All of these cases are shown to have significant effects on the current-voltage characteristics, while the thin charge layer also affects capacitance-voltage measurements.

arsenic↗
DOE OSTI2025

Grain boundary energy control in zinc aluminate nanoceramics

This study investigates the grain boundary energy dependence on segregated dopants in nanocrystalline zinc aluminate ceramics. Atomistic simulations of Σ3 and Σ9 grain boundaries showed that trivalent ions of varying ionic radii [Sc 3+ (74.5 pm), In 3+ (80.0 pm), Y 3+ (90.0 pm), and Nd 3+ (98.3 pm)] have a tendency to segregate to both interfaces, with Y 3+ presenting the highest segregation potentials. The connection between segregation and the reduction of interfacial energies was explored by measuring the grain boundary energy on nanoceramics fabricated via high‐pressure spark plasma sintering (HP‐SPS) using differential scanning calorimetry (DSC). The results revealed that Y 3+ doping at 0.5 mol% reduces the grain boundary energy in zinc aluminate nanoceramics from 1.1–1.3 J/m 2 to 0.6–0.8 J/m 2 ; the range correlates with the observed size dependence of the excess energy, with higher values observed for the smaller grain sizes (∼17 nm). The noted decrease in interfacial energies for doped samples suggests it is indeed possible to alter the stability of zinc aluminate grain boundaries via dopant segregation.

36 MATERIALS SCIENCE↗
DOE OSTI2020

MoS 2 -supported Au 31 for CO hydrogenation: A first-principle study

While the basal plane of single-layer molybdenum disulphide (MoS 2 ) is inert, attempts have been made to functionalize it chemically through the creation of defects and/or addition of dopants. With nanoparticles as dopants, the authors present density functional theory-based calculations of the hydrogenation of CO on a 31-atom, bilayer Au cluster supported on single-layer MoS 2 (Au31/MoS 2 ). Not surprisingly, the adsorption and reaction of all species involved in the hydrogenation occur at the edges of the cluster—the regions at which the interaction between MoS 2 and the Au cluster is tracked to be the strongest. The authors find two possible mechanisms that lead to the formation of methanol: (1) CO* → CHO* → CH 2 O* → CH 3 O* → CH 3 OH* and (2) CO* → CHO* → HCOH* → CH2OH* → CH3OH*, where * indicates the adsorbed species. Detailed analysis of the reaction pathways, however, does not result in favoring one mechanism over the other. Rather, both mechanisms are facile. In addition, the rate-limiting step in each mechanism is found to be the formation of the formyl radical group (CO* + H* → CHO*).

2D materials↗
DOE OSTI2025

Controlled phosphate doping into nanoscopic SiO 2 proton conducting membranes

This article describes a method to introduce phosphate (PO 4 ) into SiO 2 atomic layer deposition (ALD) films in a self-limiting fashion. The method involves the use of a less common phosphate precursor, trimethyl phosphite [P(OMe) 3 ], to introduce PO 4 as a low-level dopant, <1 at. %, into a SiO 2 ALD process using bis(ethylmethylamino)silane and a modified O 3 conversion. P(OMe) 3 does not deposit a film with typical oxygen sources but incorporates as PO 4 in an ABC-type ALD scheme at deposition temperatures ranging from 100 to 300 °C. Addition of up to ∼1 at. % of PO 4 does not significantly impact the film density or concentrations of carbon and nitrogen impurities, which are both <0.4 at. %. Despite the relatively low dopant concentrations, PO 4 incorporation is shown to have a large impact on transport properties of the film. When explored as proton (H + )-conducting membranes, undoped SiO 2 ALD films showed H + conductivities (3 × 10 −6 –8 × 10 −5 S cm −1 ) and low H 2 permeabilities (<10 −9 cm 2 s −1 ) when measured at room temperature. The addition of PO 4 is shown to increase H + conductivity to 2 × 10 −4 S cm −1 , while maintaining low H 2 permeability of <10 −9 cm 2 s −1 . The ratio of H + conductivity to H 2 permeability, a key performance metric for H + -conducting membranes used in water electrolyzers, exceeds that of commercial Nafion-117 membranes. Here, the moderate H + conductivity and very low H 2 permeability of PO 4 -doped SiO 2 films make them promising candidates as fluorine-free replacements for Nafion in applications such as water electrolysis, hydrogen fuel cells, and redox flow batteries.

Atomic layer deposition↗
DOE OSTI2021

Revealing Micro-Scale Doping Variations in Thin-Films via Simultaneous Luminescence and Current Collection Measurements

Doping thin films used for photovoltaic absorbers is both critical to maximize device voltage and challenging due to complex interactions between point defects in these materials. Such interactions can result in compensation of the intended dopant species, meaning that the active charge-carrier concentration is lower than the concentration incorporated dopants. Charge-carrier compensation is directly related to the open-circuit voltage (VOC) deficit, or magnitude of VOC relative to the theoretical limit. Understanding how the carrier concentration varies within thin-films is necessary to design material processing schedules to minimize this VOC deficit and produce more efficient devices. Unfortunately, measurements of the free carrier concentration are generally relevant at the device level and cannot resolve local differences. Resolving local doping differences in thin-films such as Cd(Se,Te), CZTS, and CIGSe requires techniques with micron or sub-micron spatial resolution due to the polycrystalline structure as well as intended and unintended composition variations in these materials. In this contribution, we show how simultaneous measurement of cathodoluminescence (CL) and electron-beam-induced current (EBIC) can be used to expose doping variations in Cd(Se,Te) thin-films. Simultaneous collection of these signals reveals unexpected differences in the electric field strength through the device thickness due to spatial variation in the carrier concentration.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2022

Effect of Annealing Conditions on Recovery of Lattice Damage in a High-Energy-Implanted 4H-SiC Superjunction PIN Diode

A high energy ion implantation system has been recently developed at the Tandem Van de Graaff facility at Brookhaven National Laboratory with tunable energy to 150 MeV capable of multi-step, deep implantation in 4H-SiC wafers with dopant atoms, such as B, P, Al, and N. Medium and high voltage devices with deep junctions can be fabricated using this system. Lattice strain introduced by the implantation process needs to be recovered and dopant atoms activated by appropriate annealing process as the device performance is strongly associated with the extent of recovery of the lattice. Using Synchrotron X-ray Rocking Curve Topography (SXRCT) and Reciprocal Space Mapping (RSM), the strain induced by high energy implantation of Al and N in 4H-SiC in different patterns are measured and mapped. It is observed that the strain levels correlate with the total fluence levels. PiN diodes fabricated on these implanted wafers were then annealed at temperatures ranging from 1700 °C to 2000 °C for 60 min. The SXRCT and RSM analysis of the annealed samples suggests that for the same annealing duration, higher temperature leads to better lattice recovery.

43 PARTICLE ACCELERATORS↗