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At least 451 records · Page 25

From anti-Arrhenius to Arrhenius behavior in a dislocation-obstacle bypass: Atomistic simulations and theoretical investigation

Dislocations are the primary carriers of plasticity in metallic materials. Understanding the basic mechanisms for dislocation movement is paramount to predicting the material mechanical response. Relying on atomistic simulations, we observe a transition from non-Arrhenius to Arrhenius behavior in the rate of an edge dislocation overcoming the long-range elastic interaction with a prismatic loop in tungsten. Close to the critical resolved shear stress, the process shows a non-Arrhenius behavior at low temperatures. However, as the temperature increases, the activation entropy starts to dominate, leading to a traditional Arrhenius-like behavior. Here, we have computed the activation entropy analytically along the minimum energy path following Schoeck’s method, which captures the cross-over between anti-Arrhenius and Arrhenius domains. Also, the Projected Average Force Integrator (PAFI), another simulation method to compute free energies along an initial transition path, exhibits considerable concurrence with Schoeck’s formalism. We conclude that entropic effects need to be considered to understand processes involving dislocations bypassing elastic barriers close to the critical resolved shear stress. More work needs to be performed to fully understand the discrepancies between Schoeck’s and PAFI compared to molecular dynamics.

36 MATERIALS SCIENCE↗

Quantifying the resistance to dislocation glide in single phase FeCrAl alloy

The resistance to dislocation glide associated with slip systems {110}<111> and {112}<111> in single phase FeCrAl alloy is measured via micromechanical testing in a scanning electronic microscopy at room temperature. Two important factors, the shape and orientation of a pillar, are discussed with respect to the glide resistance and stress-strain response. Maximizing Schmid factor of one specific slip system while minimizing others is recommended in order to diminish obvious dislocations-induced hardening during in-situ testing. Apparent Schmid factor analysis is conducted to select grains with preferred orientations. Two types of pillars with conventional cylindrical shape or dog-bone shape are tested under compression to estimate the resistance to dislocation glide and evaluate the effect of pillar shape on the compression stress-strain response. One dog-bone pillar is tested under tension to check the tension-compression isotropy of dislocation slip. We discover that the shape of a pillar to a smaller extent affects the measured resistance but strongly influences the stress strain response. Cylindrical pillars exhibit apparent hardening associated with early yielding due to stress or strain concentration at contact region, while dog-bone pillars show an obvious yielding and continuous shearing without hardening. The resistance is 220 MPa for slip system {110}<111> and 230 MPa for slip system {112}<111>. Finite element analysis is performed to account for the influence of pillar shape and contact condition on mechanical response.

36 MATERIALS SCIENCE↗

Deformation, dislocation evolution and the non-Schmid effect in body-centered-cubic single- and polycrystal tantalum

A physically-informed continuum crystal plasticity model is presented to elucidate deformation mechanisms, dislocation evolution and the non-Schmid effect in body-centered-cubic (bcc) tantalum widely used as a key structural material for mechanical and thermal extremes. We show the unified structural modeling framework informed by mesoscopic dislocation dynamics simulations is capable of capturing salient features of the large inelastic behavior of tantalum at quasi-static (10 -3 s -1 ) to extreme strain rates (5000 s -1 ) and at low (77 K) to high temperatures (873 K) at both single- and polycrystal levels. Here we also present predictive capabilities of the model for microstructural evolution in the material. To this end, we investigate the effects of dislocation interactions on slip activities, instability and the non-Schmid behavior at the single crystal level. Furthermore, ex situ measurements on crystallographic texture evolution and dislocation density growth are carried out for polycrystal tantalum specimens at increasing strains. Numerical simulation results also support that the modeling framework is capable of capturing the main features of the polycrystal behavior over a wide range of strains, strain rates and temperatures. The theoretical, experimental and numerical results at both single- and polycrystal levels provide critical insight into the underlying physical pictures for micro- and macroscopic responses and their relations in this important class of refractory bcc materials undergoing large inelastic deformations.

36 MATERIALS SCIENCE↗

Formulation and characterization of a continuous crystal lattice orientation finite element method (LOFEM) and its application to dislocation fields

We report that since the 1950s, a large body of work has been published on connecting the curvature of a crystal lattice to geometrically necessary dislocations densities of a crystal lattice. Studying dislocation transmission through grains and across their boundaries requires the lattice curvature to be preserved. However, traditional crystal plasticity models and their numerical implementations do not formally preserve lattice curvature. In this paper, a continuous crystal lattice orientation finite element method (LOFEM) is proposed to rectify this impediment to the inclusion of dislocation-based constitutive models. The methodology is first presented, and then it is demonstrated for tension and compression deformations of a copper polycrystal. It is shown that under the same deformation histories, the lattice continuity constraint alters the evolving state in comparison to the traditional approach, including retarding the rate at which the crystallographic texture strengthens under monotonic deformation. Lastly, taking advantage of the finite element representation of the lattice orientation, the Nye tensor is computed on lattices misoriented by deformation and is subsequently used to compute evolving dislocation density distributions.

36 MATERIALS SCIENCE↗

Phase field dislocation dynamics (PFDD) modeling of non-Schmid behavior in BCC metals informed by atomistic simulations

Body-Centered Cubic (BCC) metals exhibit anomalous mechanical properties such as twinning/anti-twinning and tension/compression asymmetry, which are attributed to asymmetric behavior of screw dislocations. Unlike Face-Centered Cubic (FCC) metals, the Critical Resolved Shear Stress (CRSS) of BCC metals deviates from the Schmid law. Here, we use a mesoscale modeling approach called Phase Field Dislocation Dynamics (PFDD) to understand the critical factors that control this non-Schmid behavior and reproduce atomistic predictions of the CRSS (Peierls stress). All inputs to the PFDD model are obtained from Molecular Statics (MS) simulations. Multiple pathways for modeling the non-Schmid behavior are investigated by incorporating the representative dislocation properties into different energy terms in the PFDD model. One way to understand non-Schmid behavior is to incorporate stress components projected on inclined planes into the external energy term within PFDD. Alternatively, we propose that non-Schmid behavior can also be accounted for by considering the variation of the {110} unstable stacking fault energy and the dislocation core width as a function of the applied tensorial stress field. The CRSS predicted using PFDD modeling is in excellent agreement with MS predictions.

36 MATERIALS SCIENCE↗

Phase-field modeling of dislocation–interstitial interactions

The mechanical behavior of body-centered cubic (BCC) materials can be dramatically affected by the presence of interstitial solute atoms. Here we present a new phase-field dislocation dynamics formulation to include the diffusion of interstitials. Short-range interactions are accounted for by a concentration-dependent lattice energy, and long-range interactions are accounted for by modifications to the elastic energy. The interstitial diffusion law introduces gradients that require methods for minimizing Gibbs oscillations, which is done via a modified Green’s function. The formulation is general to any solute-solvent system and is applied here to Nb-O as a model system, whose interstitial parameters are obtained from ab initio calculations. The effect of O on the core structures of Nb edge and screw dislocations is calculated. The diffusion of O to form interstitial atmospheres around dislocation cores is simulated, as well as the critical stresses required for dislocations to break away or cross slip from these atmospheres. Future applications of the method to simulate complex interstitial embrittlement mechanisms are discussed.

36 MATERIALS SCIENCE↗

Effects of Temperature on the Interactions of Helium-Vacancy Clusters with Gliding Edge Dislocations in α-Fe

The interaction of helium-vacancy (He-V) clusters with a gliding a/2<111>{110} edge dislocation in a-Fe is investigated by molecular dynamics methods under a constant strain rate at temperatures of 100 to 600 K. A number of small HenVm (n/m = 0~4) clusters initially placed at different positions relative to the slip plane are comparatively studied. The results show that the interaction of He-V clusters with gliding edge dislocations depends on the helium-to-vacancy (He/V) ratio, the position of the clusters relative to the slip plane, the cluster size, and also temperature. The obstacle strength of the He-V clusters relevant to the dislocation motion generally increases with increasing He/V ratio at the same temperature, but decreases slightly with increasing temperature for the same He-V cluster. One of the interesting results is that He-V clusters do not move along with the dislocation, even at 600 K.

a-Fe↗

Evolution of dislocation loops and voids in post-irradiation annealed ThO 2 : A combined in-situ TEM and cluster dynamics investigation

The effect of isochronal annealing on the evolution of dislocation loop and void population in proton irradiated ThO 2 has been investigated. Post-irradiation annealing in other actinide oxides like UO 2 shows significant loop coarsening. ThO 2 samples were irradiated with 2 MeV protons up to a dose of 0.1 dpa at 600°C. Post-irradiation isochronal annealing was performed at 600, 800, 1000 and 1100°C for 1 h at each temperature using in-situ TEM. Only faulted 1/3<111> type dislocation loops were observed, and their sizes and distribution were characterized. Further, the population of self-interstitial atom (SIA) dislocation loops did not show any significant growth and coarsening. Additionally, nanometric voids were observed at annealing temperatures of 1000 and 1100°C. Using cluster dynamics (CD), we have studied the nucleation and growth of point defects and defect clusters, i.e., SIA prismatic dislocation loops and nanometric and sub-nanometric voids in proton irradiated ThO 2 . The CD model was further utilized to predict the growth and coarsening of loops and voids during isochronal annealing at the experimental and higher temperatures. The model did not predict significant SIA loop growth which closely corresponds to the TEM observations. CD predicted SIA loop coarsening is insignificant even at high annealing temperature of 1500°C because the model only considers the growth of defect clusters by absorption of like point defects, i.e., SIA loops absorb interstitials and voids absorb vacancies, and cannot account for their migration and coalescence due to elastic interaction. The CD model also predicts the evolution of nanometric voids having mean size within the error bounds of TEM observations.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Relationship between dislocations and residual stresses in cold-drawn pearlitic steel analyzed by energy-dispersive X-ray diffraction

We analyzed the dislocation distribution of cold-drawn pearlitic-steel wire by using the line-profile analysis based on the energy dispersive X-ray diffraction (EDXD). Although this line-profile analysis requires a high resolution in reciprocal space, the resolution for EDXD is generally poor due to the energy resolution of the detector. Our analysis demonstrated that the resolution in the reciprocal space can be maximized at small scattering angles. Using the line-profile analysis based on the EDXD, the microstructural parameters such as the crystallite size and the dislocation density of the ferrite phase in the pearlitic steel were successfully analyzed. In addition, the distribution of the residual stress of the ferrite phase of a pearlitic steel wire was also analyzed using the EDXD measurement. - Highlights: • Energy dispersive X-ray diffraction is applied to the line-profile analysis. • Distribution of dislocations in ferrite in the pearlitic steel wire is analyzed. • Relationship between dislocations and residual stress is discussed.

36 MATERIALS SCIENCE↗

The inhibiting effect of dislocation helices on the stress-induced orientation of S' precipitates in Al–Cu–Mg alloy

The phenomenon of restrained stress-induced preferential orientation of S′ precipitates is investigated using a single-crystal of Al–1.23Cu–0.43 Mg alloy. Al–1.23Cu–0.43 Mg single-crystal specimens are subjected to stress aging, and the microstructure is analyzed by transmission electron microscopy (TEM). It is found that the stress-induced preferential orientation of S′ precipitates is restrained owing to the dislocations produced by a higher stress. The effect of dislocations on the oriented precipitates depends on the total length of the intersection lines for precipitate habit planes and dislocation glide planes. This investigation not only provides important insight into solving the anisotropy problem attributed to precipitation strengthening, but also offers a benchmark for choosing the appropriate stress range in manufacturing of Al–Cu–Mg alloys. - Highlights: • Single crystals of an Al–Cu–Mg alloy were prepared for the investigations. • A phenomenon of restrained stress-induced preferential orientation of S′ precipitates was found. • The influence of dislocation helices on precipitation during stress-aging was studied. • Difference of orientation degree of S′ precipitates and θ′ precipitates was explained. • A basis for choosing the appropriate stress range in manufacturing of Al–Cu–Mg alloys is provided.

36 MATERIALS SCIENCE↗

Bicrystallography-informed Frenkel–Kontorova model for interlayer dislocations in strained 2D heterostructures

In recent years, van der Waals (vdW) heterostructures and homostructures, which consist of stacks of two-dimensional (2D) materials, have risen to prominence due to their association with exotic quantum phenomena originating from correlated electronic states harbored by them. Atomistic scale relaxation effects play an extremely important role in the electronic scale quantum physics of these systems, providing means of manipulation of these materials and allowing them to be tailored for emergent technologies. We investigate such structural relaxation effects in this work using atomistic and mesoscale models, within the context of twisted bilayer graphene — a well-known heterostructure system that features moiré patterns arising from the lattices of the two graphene layers. For small twist angles, atomic relaxation effects in this system are associated with the natural emergence of interface dislocations or strain solitons, which result from the cyclic nature of the generalized stacking fault energy (GSFE), that measures the interface energy based on the relative movement of the two layers. Here, in this work, we first demonstrate using atomistic simulations that atomic reconstruction in bilayer graphene under a large twist also results from interface dislocations, although the Burgers vectors of such dislocations are considerably smaller than those observed in small-twist systems. To reveal the translational invariance of the heterointerface responsible for the formation of such dislocations, we derive the translational symmetry of the GSFE of a 2D heterostructure using the notions of coincident site lattices (CSLs) and displacement shift complete lattices (DSCLs). The workhorse for this exercise is a recently developed Smith normal form bicrystallography framework. Next, we construct a bicrystallography-informed and frame-invariant Frenkel–Kontorova model, which can predict the formation of strain solitons in arbitrary 2D heterostructures, and apply it to study a heterostrained, large-twist bilayer graphene system. Our mesoscale model is found to produce results consistent with atomistic simulations. We anticipate that the model will be invaluable in predicting structural relaxation and for providing insights into various heterostructure systems, especially in cases where the fundamental unit cell is large and therefore, atomistic simulations are computationally expensive.

2D heterostructures↗

Evolution of cellular dislocation structures and defects in additively manufactured austenitic stainless steel under ion irradiation

Here, the evolution of irradiation-induced defects in additively manufactured (AM) austenitic stainless steel was explored in situ by 1 MeV Kr ion irradiation at 450 and 600 °C in a transmission electron microscope. Cellular dislocation structure in AM steel act as sink/trap sites for the irradiation-induced defects, resulting in the lower density and smaller dislocation loops in AM steel than conventional forged (CF) steel at 450 °C. The higher stacking fault energy and local stress concentration induced by cellular dislocation structure in AM steel promotes the unfaulting process and the formation of network dislocation at 600 °C.

36 MATERIALS SCIENCE↗

Towards bend-contour-free dislocation imaging via diffraction contrast STEM

Dislocation imaging using transmission electron microscopy (TEM) has been an invaluable tool for characterizing crystallographic defects in metals. Compared to conventional TEM imaging, diffraction contrast imaging scanning transmission electron microscopy (DCI STEM) with appropriate setting can provide better defect contrast with almost negligible bend contour artifacts, enabling more effective analysis of dislocation structures. Here, we investigated why STEM can suppresses bend contour, and how dislocation contrast behaves along with different STEM imaging parameters. Using a body-centered cubic HT-9 ferritic/martensitic alloy as an example, a simple procedure and operational theory are described at the beginning to help set up DCI STEM experiments. Comparing with conventional TEM and the STEM strictly complying with the principle of reciprocity, we found that a pair of STEM convergence and collection semi-angles, α S and β S , a few milliradians in size is essential for bend-contour-free defect imaging. It works in concert such that the convergence STEM probe opens up the reciprocal space, and then a comparable collection region evens out the rocking-curve oscillation and alleviates bend contours from the reciprocal space. This fundamental advantage is unique in DCI STEM. Practical guidelines regarding STEM parameters and specimen orientation and thickness are then provided for DCI STEM dislocation imaging. Lastly, we show that coupling DCI STEM with spectrum images of electron energy loss spectroscopy and of energy-dispersive X-ray Spectroscopy offers a comprehensive characterization of crystallographic defects and chemical information of complex microstructures.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Dual Phase Synergy Enabled Large Elastic Strains of Nanoinclusions in a Dislocation Slip Matrix Composite

Freestanding nanomaterials (such as nanowires, nanoribbons and nanotubes) are known to exhibit ultra-large elastic strains and ultra-high strengths. However, harnessing their superior intrinsic mechanical properties in bulk composites has proven to be difficult. A recent breakthrough has overcome this difficulty by using a martensitic phase transforming matrix, in which ultra-large elastic strains approaching the theoretical limit is achieved in Nb nanowires embedded in the matrix. This discovery, whereas breaking a long-standing challenge, still limits our ability of harnessing the exceptional properties of nanomaterials and developing ultrahigh strength bulk materials to a narrow selection of phase transforming alloy matrices. In this study, we investigated the possibility to harness the intrinsic mechanical properties of nanoinclusions in conventional dislocation slip matrix based on a principle of synergy between the inclusion and the matrix. The small spacing between the densely populated hard and dislocation-impenetrable nanoinclusions departmentalize the plastic matrix into small domains to effectively impede dislocation motion within the matrix, inducing significant strengthening and large local elastic strains of the matrix, which in turn induced large elastic strains in the nanoinclusions. This dual phase synergy is verified in a Ti 3 Sn inclusions/B2-NiTi(Fe) plastic matrix model materials system. The maximum elastic strain of Ti 3 Sn inclusion obtained in the dislocation slip matrix is comparable to that achieved in a phase transforming matrix. As a result, this finding opens new opportunities for the development of high-strength nanocomposites.

42 ENGINEERING↗

Dislocation engineering in SiGe heteroepitaxial films on patterned Si (001) substrates

We demonstrate dislocation engineering without oxide masks. By using finite element simulations we show how nanopatterning of Si substrates with (111) trenches provides anisotropic elastic relaxation in a SiGe film, generates preferential nucleation sites for dislocation loops, and allows for dislocation trapping, leaving wide areas free of threading dislocations. These predictions are confirmed by atomic force and transmission electron microscopy performed on overcritical Si{sub 0.7}Ge{sub 0.3} films. These were grown by molecular beam epitaxy on a Si(001) substrate patterned with periodic arrays of selectively etched (111)-terminated trenches.

36 MATERIALS SCIENCE↗

Formation of ordered one-dimensional microstructures of dislocations in near-surface layer of semiconductor, under laser radiation with microstructured distribution of intensity

The paper presents the results of investigation the process of formation of the ordered microstructures of dislocations in the near-surface layer a single-crystal plate of silicon under the action of pulsed laser radiation with microstructured distribution intensity. It has been found that generation of the ordered one-dimensional microstructures of dislocations takes place. The period of these ordered microstructures is d{approx_equal}3 divide 4 {mu}m. A combination of one-dimensional structures of dislocations produces ordered two-dimensional structure of dislocations.

36 MATERIALS SCIENCE↗

Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy

AlGaN/AlN/GaN heterostructures were grown on 6H-SiC, GaN-on-sapphire, and free-standing GaN, resulting in heterostructures with threading dislocation densities of {approx}2 Multiplication-Sign 10{sup 10}, {approx}5 Multiplication-Sign 10{sup 8}, and {approx}5 Multiplication-Sign 10{sup 7} cm{sup -2}, respectively. Growths were carried out under Ga-rich conditions by plasma-assisted molecular beam epitaxy to determine the influence of threading dislocation density on the sheet resistance of AlGaN/AlN/GaN heterostructures. High threading dislocation density was observed to significantly degrade Hall mobility. An AlGaN/AlN/GaN heterostructure with a {approx}2 nm AlN interlayer and a threading dislocation density of {approx}5 Multiplication-Sign 10{sup 7} cm{sup -2} achieved the very low room temperature sheet resistance of 175 {Omega}/{open_square}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Multi-scale simulation of lithium diffusion in the presence of a 30° partial dislocation and stacking fault in Si

The multi-scale simulation method is employed to investigate how defects affect the performances of Li-ion batteries (LIBs). The stable positions, binding energies and dynamics properties of Li impurity in Si with a 30° partial dislocation and stacking fault (SF) have been studied in comparison with the ideal crystal. It is found that the most table position is the tetrahedral (T{sub d}) site and the diffusion barrier is 0.63 eV in bulk Si. In the 30° partial dislocation core and SF region, the most stable positions are at the centers of the octagons (Oct-A and Oct-B) and pentahedron (site S), respectively. In addition, Li dopant may tend to congregate in these defects. The motion of Li along the dislocation core are carried out by the transport among the Oct-A (Oct-B) sites with the barrier of 1.93 eV (1.12 eV). In the SF region, the diffusion barrier of Li is 0.91 eV. These two types of defects may retard the fast migration of Li dopant that is finally trapped by them. Thus, the presence of the 30° partial dislocation and SF may deactivate the Li impurity and lead to low rate capability of LIB.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗