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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 451 records · Page 25
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Photonic Crystal Surface Emitting Diode Lasers with λ near 2 µm

Epitaxially regrown electrically pumped photonic crystal surface emitting lasers (PCSELs) operating near 2 µm were designed and fabricated within a III-V-Sb material system. A high-index-contrast photonic crystal layer was incorporated into the laser heterostructures by air-pocket-retaining epitaxial regrowth. Transmission electron microscopy studies confirmed uniform and continuous AlGaAsSb initial growth over the nano-patterned GaSb surface, followed by the development of the air-pockets. The PCSEL threshold current density had a minimal value of ~170 A/cm 2 in the 160–180 K temperature range when the QW gain spectrum aligned with the Γ 2 band edge of the photonic crystal. The devices operated in a continuous wave regime at 160 K. The divergence and polarization of the multimode laser beam emitted from the 200 µm × 200 µm PCSEL aperture were controlled by filamentation.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Non-platinum metal complexes for excimer based single dopant white organic light emitting diodes

Complexes and devices, such as organic light emitting devices and full color displays, including a compound of the formula wherein: M is Pd2+, Ir+, Rh+, or Au3+; each of V1, V2, V3, and V4 is coordinated to M and is independently N, C, P, B, or Si; each of L1, L2, L3, and L4 is independently a substituted or unsubstituted aryl, cycloalkyl, cycloalkenyl, heterocyclyl, heteroaryl, carbene, or N-heterocyclic carbene; and Z is O, S, NR, CR2, SiR2, BR, PR, where each R is independently substituted or unsubstituted C1-C4 alkyl or substituted or unsubstituted aryl.

36 MATERIALS SCIENCE↗
DOE OSTI2021

GaN-based threshold switching device and memory diode

A switching device including a GaN substrate; an unintentionally doped GaN layer on a first surface of the GaN substrate; a regrown unintentionally doped GaN layer on the unintentionally doped GaN layer; a regrowth interface between the unintentionally doped GaN layer and the regrown unintentionally doped GaN layer; a p-GaN layer on the regrown unintentionally doped GaN layer; a first electrode on the p-GaN layer; and a second electrode on a second surface of the GaN substrate.

Fu, Kai↗
DOE OSTI2022

Organic light-emitting diodes with fluorescent and phosphorescent emitters

A light emitting device includes a first electrode, a hole transporting layer in contact with the first electrode, a second electrode, an electron transporting layer in contact with the second electrode; and an emissive layer between the hole transporting layer and the electron transporting layer. The emissive layer includes a phosphorescent emitter, a fluorescent emitter, and a host, and the phosphorescent emitter harvests electrogenerated excitons and transfers energy to the fluorescent emitter.

Li, Jian↗