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At least 451 records · Page 25

Cosmic ray induced errors in I2L microprocessors and logic devices

Large-scale integrated (LSI) devices fabricated with integrated injection logic (I2L) were studied by both heavy ion experiments and device analysis to determine the upset threshold, the charge collection volumes and ultimately the probability for upset in the galactic cosmic ray spectrum. The devices studied, the SEP9900A, the SBP9989 and the P-Code generator were fabricated by Texas Instruments, Inc.

Price, W. E.↗

The obstacle block as a device to measure turbulent skin friction in compressible flow

The obstacle block, developed as an alternative to the Preston tube for indirectly measuring skin friction on smooth surfaces in incompressible flows, is examined as a device for compressible flows as well. The block, which is congruent with a surface static pressure orifice, has a geometry which is easily specified and thus has a universal calibration. Data from two independent studies are used to establish such a calibration using 'wall' variables, valid for Mach numbers up to about 3. Various aspects concerning practical application of the device are examined, such as sensitivity to yaw and the minimum permissible axial spacing between blocks. Several examples showing the utility of the device are given.

Elfstrom, G. M.↗

The Effect of Cosmic Rays on MSI Devices

Low-power devices susceptible to cosmic-ray particles. Five MSI device technologies, including TTL, low power TTL, Schottky, CMOS, and low-power Schottky, subjected to 120-MeV krypton-ion beam from cyclotron and monitored for single-event upset. Results find terrestrial application for radiation hardening of electronic devices and systems.

Nichols, D. K.↗

Radiation-Hardness Data For Semiconductor Devices

Document presents data on and analysis of radiation hardness of various semiconductor devices. Data specifies total-dose radiation tolerance of devices. Volume 1 of report covers diodes, bipolar transistors, field effect transistors, silicon controlled rectifiers and optical devices. Volume 2 covers integrated circuits. Volume 3 provides detailed analysis of data in volumes 1 and 2.

Price, W. E.↗

The phototron: A light to RF energy conversion device

The phototron, a photoelectric device that converts light to radio frequency energy, is described. It is a vacuum tube, free electron, device that is mechanically similar to a reflex klystron with the hot filament cathode replaced by a large area photocathode. The device can operate either with an external voltage source used to accelerate the photoelectrons or with zero bias voltage; in which case the photokinetic energy of the electrons sustains the R.F. oscillations in the tuned R.F. circuit. One basic design of the phototron was tested. Frequencies as high as about 1 GHz and an overall efficiency of about 1% in the biased mode were obtained. In the unbiased mode, the frequencies of operation and efficiences are considerably lower. Success with test model suggests that considerable improvements are possible through design refinements. One such design refinement is the reduction of the length of the electron flight path.

Freeman, J. W.↗

Subsonic balance and pressure investigation of a 60 deg delta wing with leading edge devices

Low supersonic wave drag makes the thin highly swept delta wing the logical choice for use on aircraft designed for supersonic cruise. However, the high-lift maneuver capability of the aircraft is limited by severe induced-drag penalties attributed to loss of potential flow leading-edge suction. This drag increase may be alleviated through leading-edge flow control to recover lost aerodynamic thrust through either retention of attached leading-edge flow to higher angles of attack or exploitation of the increased suction potential of separation-induced vortex flow. A low-speed wind-tunnel investigation was undertaken to examine the high-lift devices such as fences, chordwise slots, pylon vortex generators, leading-edge vortex flaps, and sharp leading-edge extensions. The devices were tested individually and in combinations in an attempt to improve high-alpha drag performance with a minimum of low-alpha drag penalty. This report presents an analysis of the force, moment, and static pressure data obtained in angles of attack up to 23 deg, at Mach and Reynolds numbers of 0.16 and 3.85 x 10 to the 6th power per meter, respectively. The results indicate that all the devices produced drag and longitudinal/lateral stability improvements at high lift with, in most cases, minor drag penalties at low angles of attack.

Tingas, S. A.↗

Orthotic devices using lightweight composite materials

Potential applications of high strength, lightweight composite technology in the orthotic field were studied. Several devices were designed and fabricated using graphite-epoxy composite technology. Devices included shoe plates, assistive walker devices, and a Simes prosthesis reinforcement. Several other projects having medical application were investigated and evaluations were made of the potential for use of composite technology. A seat assembly was fabricated using sandwich construction techniques for the Total Wheelchair Project.

Harrison, E., Jr.↗

The damage equivalence of electrons, protons, and gamma rays in MOS devices

The results of laboratory tests to determine the radiation damage effects induced on MOS devices from Co-60, electron, and proton radiation are reported. The tests are performed to establish the relationship between the Co-60 gamma rays and the level of damage to the MOS devices in regards to different damages which can be expected with the electron and particle bombardments experienced in space applications. CMOS devices were exposed to the Co-60 gamma rays, 1 MeV electrons, and 1 MeV protons while operating at 3, 10, and 15 V. The test data indicated that the Co-60 source was reliable for an initial evaluation of the electron damages up to 2 MeV charge. A correction factor was devised for transferring the Co-60 measurements to proton damages, independent of bias and transistor types, for any orbit or environment.

Brucker, G. J.↗

Progress in 800 x 800 charge-coupled device /CCD/ imager development and applications

Performance parameters of the 800 x 800 three phase and virtual phase CCD imaging sensors for the planned Project Galileo and Space Telescope Wide Field/Planetary Camera are compared, and the significance of some of the parameters for device radiation performance is discussed. The problems encountered by the three phase device that resulted in its being considered not suitable for the Galileo mission are described, and the radiation hardening performed on the virtual phase device to permit it to cope with Jupiter's radiation belts is addressed. Major research tasks in the effort to advance the technology of large area virtual phase imagers are stated.

Norris, D. D.↗

Prosthetic occlusive device for an internal passageway

An occlusive device is disclosed for surgical implant to occlude the lumen of an internal organ. The device includes a cuff having a backing collar and two isolated cuff chambers. The fluid pressure of one chamber is regulated by a pump/valve reservoir unit. The other chamber is unregulated in pressure but its fluid volume is adjusted by removing or adding fluid to a septum/reservoir by means of a hypodermic needle. Pressure changes are transmitted between the two cuff chambers via faying surfaces which are sufficiently large in contact area and thin as to transmit pressure generally without attenuation. By adjusting the fluid volume of the septum, the operating pressure of the device may be adjusted to accommodate tubular organs of different diameter sizes as well as to compensate for changes in the organ following implant without reoperation.

Tenney, J. B., Jr.↗

Inflatable device for installing strain gage bridges

Methods and devices for installing in a tubular shaft multiple strain gages are disclosed with focus on a method and a device for pneumatically forcing strain gages into seated engagement with the internal surfaces of a tubular shaft in an installation of multiple strain gages in a tubular shaft. The strain gages or other electron devices are seated in a template-like component which is wrapped about a pneumatically expansible body. The component is inserted into a shaft and the body is pneumatically expanded after a suitable adhesive was applied to the surfaces.

Cook, C. E.↗

Initial experimental results from a laboratory size beam plasma discharge device

A laboratory beam plasma discharge (BPD) device produced BPD in N2, A, and He. All features of the BPD observed in the device agree with those observed in a large vacuum chamber. The empirical ignition criteria determined in the large chamber apply in the small device but do not fit when used for extrapolation between the large and the small geometry. At some energies and magnetic fields beam currents exist for which the total light output in the BPD state varies by a factor of 2 with a factor of 6 pressure variation. Above 0.0001 torr the BPD width is pressure independent but for lower pressures it expands by as much as a factor of 4 at 0.00002 torr.

Konradi, A.↗

Pressure letdown method and device for coal conversion systems

In combination with a reactor for a coal utilization system, a pressure letdown device accepts from a reactor, a polyphase fluid at an entrance pressure and an entrance velocity, and discharges the fluid from the device at a discharge pressure substantially lower than the entrance pressure and at a discharge temperature and a discharge velocity substantially equal to the entrance temperature and entrance velocity. The device is characterized by a series of pressure letdown stages including several symmetrical baffles, disposed in coaxially nested alignment. In each baffle several ports or apertures of uniform dimensions are defined. The number of ports or apertures for each baffle plate is unique with respect to the number of ports or apertures defined in each of the other baffles. The mass rate of flow for each port is a function of the area of the port, the pressure of the fluid as applied to the port, and a common pressure ratio established across the ports.

Kendal, J. M.↗

Millimeter wave transmission systems and related devices

A survey was made of the state-of-the-art in millimeter (20 GHz to 300 GHz) wave transmission systems and related devices. The survey includes summaries of analytical studies and theoretical results that were obtained for various transmission line structures. This material was supplemented by further analysis where appropriate. The transmission line structures are evaluated in terms of electrical performance, ease of manufacture, usefulness for building other devices and compatibility with solid state devices. Descriptions of waveguide transmission lines which have commonly been used in the microwave frequency range are provided along with special attention given to the problems that these guides face when their use is extended into the millimeter wave range. Also, guides which have been introduced specifically to satisfy the requirements of millimeter wave transmission are discussed in detail.

Hebert, L. M.↗

A survey of gas-side fouling measuring devices

A survey of measuring devices or probes, which were used to investigate gas side fouling, was carried out. Five different types of measuring devices are identified and discussed including: heat flux meters, mass accumulation probes, optical devices, deposition probes, and acid condensation probes. A total of 32 different probes are described in detail and summarized in matrix or tabular form. The important considerations of combustion gas characterization and deposit analysis are also given a significant amount of attention. The results show that considerable work was done in the development of gas side fouling probes. However, it is clear that the design, construction, and testing of a durable, versatile probe - capable of monitoring on-line fouling resistances - remains a formidable task.

Marner, W. J.↗

Latchup in CMOS devices from heavy ions

It is noted that complementary metal oxide semiconductor (CMOS) microcircuits are inherently latchup prone. The four-layer n-p-n-p structures formed from the parasitic pnp and npn transistors make up a silicon controlled rectifier. If properly biased, this rectifier may be triggered 'ON' by electrical transients, ionizing radiation, or a single heavy ion. This latchup phenomenon might lead to a loss of functionality or device burnout. Results are presented from tests on 19 different device types from six manufacturers which investigate their latchup sensitivity with argon and krypton beams. The parasitic npnp paths are identified in general, and a qualitative rationale is given for latchup susceptibility, along with a latchup cross section for each type of device. Also presented is the correlation between bit-flip sensitivity and latchup susceptibility.

Soliman, K.↗

Variable-Temperature-Gradient Device for Solidification Research

Device for research in solidification and crystal growth allows crystallization of melt observed as occurs. Temperature gradient across melt specimen increased or decreased rapidly while solidification front proceeds at constant speed across sample. Device moves sample at same speed, thereby holding position of liquid/solid interface stationary within field of optical microscope. Device, variabletemperature-gradient microscope stage, used to study crystal growth at constant rate while thermal driving force is varied.

Kaukler, W. F.↗

Spill-Detector-and-Shutoff Device

Overflow in liquid chromatography systems rapidly detected and stopped. Spill-detector-and-shutoff device incorporated into liquid-chromatography system. When liquid from output nozzle spills on liquid sensor, device automatically shuts off pump and releases solenoid to pinch off flow in tube. Device uses common type of alarm circuit reset manually before normal operation resumes.

Jarvis, M. R.↗