SEARCH · Engineering Papers

Results for “Carbide”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 451 records · Page 25

All sources NASA NTRS DOE OSTI

NASA NTRS1994

Radial variation of elastic properties of SCS-6 silicon carbide fiber

The upper and lower bounds of the bulk, shear, and Young's moduli are calculated point-by-point along the radius of SCS-6 silicon carbide fibers using the Hashin-Shtrikman equations from considerations of the Auger spectra along the fiber radius. The calculated values are in agreement with measurements of the average Young modulus obtained over relatively large radial regions of the fiber using scanning acoustic microscopy (SAM). The validity of the Hashin-Shtrikman bounds calculations is enhanced by the agreement found between experimental SAM V(z) curves for fixed z along the fiber radius and the theoretical bounds of such curves obtained from the bounds of the calculated bulk and shear moduli.

Sathish, Shamachary↗

NASA NTRS1996

High temperature brush seal tuft testing of metallic bristles versus chrome carbide

The tribology of brush seals is of considerable interest to turbine engine designers because bristle wear continues to limit long term seal performance and life. To provide better materials characterization and foster the development of improved seals, NASA Lewis has developed a brush seal tuft tester. In this test, a 'paintbrush' sample tuft is loaded under constant contact pressure against the outside diameter of a rotating journal. With this configuration a direct measurement of load and friction is made. Accurate wear rate measurements are possible due to the known contact pressure. Previously reported baseline research using this facility showed good data repeatability and wear morphology similar to published seal data. This paper extends and expands the database for candidate brush seal materials. A series of tuft tests were completed to evaluate the performance of five high temperature superalloy wires sliding against plasma sprayed nichrome-bonded chrome carbide. Wire materials were either nickel-chrome or cobalt-chrome based superalloys. Good corroboration of the tuft results with dynamic seal rig tests was observed; giving additional confidence in the tuft test as a screening and development tool.

Fellenstein, James A.↗

NASA NTRS1995

High-temperature oxidation behavior of reaction-formed silicon carbide ceramics

The oxidation behavior of reaction-formed silicon carbide (RFSC) ceramics was investigated in the temperature range of 1100 to 1400 C. The oxidation weight change was recorded by TGA; the oxidized materials were examined by light and electron microscopy, and the oxidation product by x-ray diffraction analysis (XRD). The materials exhibited initial weight loss, followed by passive weight gain (with enhanced parabolic rates, k(sub p)), and ending with a negative (logarithmic) deviation from the parabolic law. The weight loss arose from the oxidation of residual carbon, and the enhanced k(sub p) values from internal oxidation and the oxidation of residual silicon, while the logarithmic kinetics is thought to have resulted from crystallization of the oxide. The presence of a small amount of MoSi, in the RFSC material caused a further increase in the oxidation rate. The only solid oxidation product for all temperatures studied was silica.

Ogbuji, Linus U. J. T.↗

NASA NTRS1997

Joining of Silicon Carbide-Based Ceramics by Reaction Forming Method

Recently, there has been a surge of interest in the development and testing of silicon-based ceramics and composite components for a number of aerospace and ground based systems. The designs often require fabrication of complex shaped parts which can be quite expensive. One attractive way of achieving this goal is to build up complex shapes by joining together geometrically simple shapes. However, the joints should have good mechanical strength and environmental stability comparable to the bulk materials. These joints should also be able to maintain their structural integrity at high temperatures. In addition, the joining technique should be practical, reliable, and affordable. Thus, joining has been recognized as one of the enabling technologies for the successful utilization of silicon carbide based ceramic components in high temperature applications. Overviews of various joining techniques, i.e., mechanical fastening, adhesive bonding, welding, brazing, and soldering have been provided in recent publications. The majority of the techniques used today are based on the joining of monolithic ceramics with metals either by diffusion bonding, metal brazing, brazing with oxides and oxynitrides, or diffusion welding. These techniques need either very high temperatures for processing or hot pressing (high pressures). The joints produced by these techniques have different thermal expansion coefficients than the ceramic materials, which creates a stress concentration in the joint area. The use temperatures for these joints are around 700 C. Ceramic joint interlayers have been developed as a means of obtaining high temperature joints. These joint interlayers have been produced via pre-ceramic polymers, in-situ displacement reactions, and reaction bonding techniques. Joints produced by the pre-ceramic polymer approach exhibit a large amounts of porosity and poor mechanical properties. On the other hand, hot pressing or high pressures are needed for in-situ displacement reactions and reaction bonding techniques. Due to the equipment required, these techniques are impractical for joining large or complex shaped components.

Singh, M.↗

NASA NTRS1994

Radial Variation of Elastic Properties of SCS-6 Silicon Carbide Fiber

Sathish, Shamachary↗

NASA NTRS1959

Measurements of Total Hemispherical Emissivity of Several Stably Oxidized Nickel-Titanium Carbide Cemented Hard Metals from 600 F to 1,600 F

The total hemispherical emissivity of several nickel-titanium carbide cemented hard metals have been measured over a temperature range from 600 F to l,600 F. A variety of cemented hard metals were obtained from the Kennametal Corporation. A brief discussion of the apparatus employed and the procedures used for this investigation is included. The results of the tests of specimens in the as-received and polished states indicate a nearly constant emissivity for each material tested over the temperature range considered and only slight differences in emissivity values for the different materials. Values obtained on the stably oxidized specimens range from 0.90 to 0.94 at 6000 F and o.88 to 0.92 at 1,600 F for the as-received specimens and from 0.82 to 0.89 at 600 F and 0.85 to 0.87 at 1,600 F for the polished specimens. The surface analysis of the oxidized materials as obtained by X-ray diffraction methods and metallographic techniques are presented as an aid to reproducing the surface on which these measurements were made.

Wade, William R.↗

NASA NTRS1997

The Oxidation of CVD Silicon Carbide in Carbon Dioxide

Chemically-vapor-deposited silicon carbide (CVD SiC) was oxidized in carbon dioxide (CO2) at temperatures of 1200-1400 C for times between 100 and 500 hours at several gas flow rates. Oxidation weight gains were monitored by thermogravimetric analysis (TGA) and were found to be very small and independent of temperature. Possible rate limiting kinetic laws are discussed. Oxidation of SiC by CO2 is negligible compared to the rates measured for other oxidants typically found in combustion environments: oxygen and water vapor.

Opila, Elizabeth J.↗

NASA NTRS1998

Impact of Radiation Hardness and Operating Temperatures of Silicon Carbide Electronics on Space Power System Mass

The effect of silicon carbide (SiC) electronics operating temperatures on Power Management and Distribution (PMAD), or Power Conditioning (PC), subsystem radiator size and mass requirements was evaluated for three power output levels (100 kW(e) , 1 MW(e), and 10 MW(e)) for near term technology ( i.e. 1500 K turbine inlet temperature) Closed Cycle Gas Turbine (CCGT) power systems with a High Temperature Gas Reactor (HTGR) heat source. The study was conducted for assumed PC radiator temperatures ranging from 370 to 845 K and for three scenarios of electrical energy to heat conversion levels which needed to be rejected to space by means of the PC radiator. In addition, during part of the study the radiation hardness of the PC electronics was varied at a fixed separation distance to estimate its effect on the mass of the instrument rated reactor shadow shield. With both the PC radiator and the conical shadow shield representing major components of the overall power system the influence of the above on total power system mass was also determined. As expected, results show that the greatest actual mass savings achieved by the use of SiC electronics occur with high capacity power systems. Moreover, raising the PC radiator temperature above 600 K yields only small additional system mass savings. The effect of increased radiation hardness on total system mass is to reduce system mass by virtue of lowering the shield mass.

Juhasz, Albert J.↗

NASA NTRS1998

High-Temperature Slow Crack Growth of Silicon Carbide Determined by Constant-Stress-Rate and Constant-Stress Testing

High-temperature slow-crack-growth behaviour of hot-pressed silicon carbide was determined using both constant-stress-rate ("dynamic fatigue") and constant-stress ("static fatigue") testing in flexure at 1300 C in air. Slow crack growth was found to be a governing mechanism associated with failure of the material. Four estimation methods such as the individual data, the Weibull median, the arithmetic mean and the median deviation methods were used to determine the slow crack growth parameters. The four estimation methods were in good agreement for the constant-stress-rate testing with a small variation in the slow-crack-growth parameter, n, ranging from 28 to 36. By contrast, the variation in n between the four estimation methods was significant in the constant-stress testing with a somewhat wide range of n= 16 to 32.

Choi, Sung H.↗

NASA NTRS1998

Far Ultraviolet and Visible Light Scatter Measurements for CVD Silicon Carbide Mirrors for SOHO

Chemically-vapor-deposited (CVD) silicon carbide (SiC) has become a popular mirror material for spaceborne solar instrumentation for the vacuum ultraviolet wavelength range due to its appreciable broadband reflectance and favorable thermal and opto-mechanical properties. Scatter from surfaces of mirrors operating in this wavelength range can destroy otherwise good image contrast especially for extended targets such as the sun. While visible light scatter measurements are relatively easy to conduct, far ultraviolet (FUV) scatter measurements are not so easy. Visible light (633 nm) scatter measurements were performed on CVD SiC telescope mirrors (from the same vendor) for two instruments on the Solar and Heliospheric Observatory (SOHO) -- Ultraviolet Coronagraph Spectrometer (UVCS) and Solar Ultraviolet Measurement of Emitted Radiation (SUMER). Additionally, extensive FUV scatter measurements were made for SUMER telescope mirrors. We attempt to correlate the results for those visible light scatter measurements and to explore the usefulness of visible scatter measurements to predictions of FUV scatter for this important material.

Leviton, Douglas B.↗

NASA NTRS1998

Surface Micromachined Silicon Carbide Accelerometers for Gas Turbine Applications

A finite-element analysis of possible silicon carbide (SIC) folded-beam, lateral-resonating accelerometers is presented. Results include stiffness coefficients, acceleration sensitivities, resonant frequency versus temperature, and proof-mass displacements due to centripetal acceleration of a blade-mounted sensor. The surface micromachined devices, which are similar to the Analog Devices Inc., (Norwood, MA) air-bag crash detector, are etched from 2-pm thick, 3C-SiC films grown at 1600 K using atmospheric pressure chemical vapor deposition (APCVD). The substrate is a 500 gm-thick, (100) silicon wafer. Polysilicon or silicon dioxide is used as a sacrificial layer. The finite element analysis includes temperature-dependent properties, shape change due to volume expansion, and thermal stress caused by differential thermal expansion of the materials. The finite-element results are compared to experimental results for a SiC device of similar, but not identical, geometry. Along with changes in mechanical design, blade-mounted sensors would require on-chip circuitry to cancel displacements due to centripetal acceleration and improve sensitivity and bandwidth. These findings may result in better accelerometer designs for this application.

DeAnna, Russell G.↗

NASA NTRS1999

Carbon Fiber Reinforced/Silicon Carbide Turbine Blisk Testing in the SIMPLEX Turbopump

A program designed to implement a ceramic matrix composite integrally bladed disk (blisk) into rocket engine style turbomachinery has successfully completed testing. The Marshall Space Flight Center (MSFC) program, utilizing the MSFC turbomachinery design, analysis, and testing capabilities along with materials development capabilities from both Glenn Research Center (GRC) and MSFC, has tested two carbon fiber reinforced silicon carbide blisks in the Simplex Turbopump at MSFC's Test Stand 500. One blisk contained a polar woven fiber preform, while the second blisk tested utilized a quasi-isotropic preform. Vhile earlier papers have chronicled the program's design, material testing, and torque testing efforts, this paper focuses on the testing of the blisks in the Simplex turbopump. Emphasis will be placed on the actual condition of the blisks before and after the testing test program design methodology, and conclusions that can be drawn from the test data and blisk final conditions. The program performed three separate test series. The first series was needed to validate that the Simplex turbopump was correctly re-built following a major incident to the turbopump. The turbopump had two major differences from the original design. The most obvious difference was the sleeve required throughout the bore of the main housing. The second major difference was modifications to the pump diffuser to improve performance. Several areas were burnt during the incident and were either repaired by weld repair (pump inlet housing) or simply smoothed out (turbine nozzle discharge). The test series was designed to weed out any turbopump design and manufacturing flaws or fatigue issues prior to putting the C/SiC blisks into it. The second and third series were the C/SiC blisk test series. The primary goal of these series was to expose the blisks to as much fatigue causing dynamic stress as possible to examine the material's capability. Initially, the test plan was to put equal time on the two blisks, however, as the test series progressed, the funding allowed additional testing to occur. The additional test time was placed on the polar weave blisk. The total test time accrued on the polar blisk was 2550 seconds with 860 seconds near the turbopump design speed of 25,000 rpm. This testing included 6 tests / 775 seconds pumping liquid nitrogen and 7 tests / 1775 seconds pumping liquid oxygen. The drive gas for all of the tests was gaseous nitrogen due to the lack of hot gas source for the Simplex turbopump. The quasi-isotropic blisk was tested for XX total tests and XXXX seconds with X tests/XXXX seconds pumping liquid nitrogen and X tests/XXXX seconds pumping liquid \oxygen.During the test series, the blisks were inspected following each test. Inspections initially were viewed from the downstream side of the blisks only. Midway through the testing, a method of borescoping the leading edges of the blades was devised, and subsequently, both sides of the blades were inspected following each test. The leading and trailing edges of the polar blisk held up better than the quasi-isotropic blisk. This was a known possibility due to the varying fiber direction in the blades as the rectangular preform weave is cut in a circular pattern. The surprising fact about the testing was that there was no measurable performance loss due to the inaccuracies in the blade manufacturing in the C/SiC blisks, the surface roughness C/SiC of the blades, or the loss of the material in the polar blisk. A performance shift was seen in the quasi-isotropic blisk as portions of the leading and trailing edges were lost. After the testing was completed, detailed inspections of the blisks were performed. The largest surprise was the polar blisk had a obvious crack in a single blade that was located nearly midspan which was not detected in test. The crack ran completely through the blade circumferenciary and through the radial length of the blade. However, the crack does not appear to extend into the blisk hub. Although the cause of the crack is still under investigation, the material appears to be tolerant of this crack, and other hairline cracks discovered under higher magnification. This bodies well for eventual use of this material in actual flight turbopumps where monolithic fracture toughness issues limit its use.

Genge, Gary G.↗

NASA NTRS1998

Oxidation of Chemically-Vapor-Deposited Silicon Carbide in Carbon Dioxide

Chemically-vapor-deposited silicon carbide (CVD SiC) was oxidized in carbon dioxide (CO2) at temperatures of 1200-1400 C for times between 96 and 500 h at several gas flow rates. Oxidation weight gains were monitored by thermogravimetric analysis (TGA) and were found to be very small and independent of temperature. Possible rate limiting kinetic mechanisms are discussed. Passive oxidation of SiC by CO2 is negligible compared to the rates measured for other oxidants that are also found in combustion environments, oxygen and water vapor.

Opila, Elizabeth J.↗

NASA NTRS1997

Process-Induced Morphological Defects in Epitaxial CVD Silicon Carbide

Silicon carbide (SiC) semiconductor technology has been advancing rapidly, but there are numerous crystal growth problems that need to be solved before SiC can reach its full potential. Among these problems is a need for an improvement in the surface morphology of epitaxial films that are grown to produce device structures. Various processes before and during epilayer growth lead to the formation of morphological defects observed in SiC epilayers grown on SiC substrates. In studies of both 6H and 4H-SiC epilayers, atomic force microscopy (AFM) and other techniques have been used to characterize SiC epilayer surface morphology. In addition to the well-known micropipe defect, SiC epilayers contain growth pits, triangular features (primarily) in 4H-SiC, and macro step due to step bunching. In work at NASA Lewis, it has been found that factors contributing to the formation of some morphological defects include: defects in the substrate bulk, defects in the substrate surface caused by cutting and polishing the wafer, the tilt angle of the wafer surface relative to the basal plane, and growth conditions. Some of these findings confirm results of other research groups. This paper presents a review of published and unpublished investigations into processes that are relevant to epitaxial film morphology.

Powell, J. A.↗

NASA NTRS2000

Mechanical, Chemical and Microstructural Characterization of Monazite-Coated Silicon Carbide Fibers

Tensile strengths of as-received Hi-Nicalon and Sylramic fibers and those having monazite surface coatings, deposited by atmospheric pressure chemical vapor deposition, were measured at room temperature and the Weibull statistical parameters determined. The average tensile strengths of uncoated Hi-Nicalon and Sylramic fibers were 3.19 +/- 0.73 and 2.78 +/- 0.53 GPa with a Weibull modulus of 5.41 and 5.52, respectively. The monazite-coated Hi-Nicalon and Sylramic fibers showed strength loss of approx. 10 and 15 percent, respectively, compared with the as-received fibers. The elemental compositions of the fibers and the coatings were analyzed using scanning Auger microprobe and energy dispersive X-ray spectroscopy. The LaPO4 coating on Hi-Nicalon fibers was approximately stoichiometric and about 50 nm thick. The coating on the Sylramic fibers extended to a depth of about 100 to 150 nm. The coating may have been stoichiometric LaPO4 in the first 30 to 40 nm of the layer. However, the surface roughness of Sylramic fiber made this profile somewhat difficult to interpret. Microstructural analyses of the fibers and the coatings were done by scanning electron microscopy, transmission electron microscopy, and selected area electron diffraction. Hi-Nicalon fiber consists of fine beta-SiC nanocrystals ranging in size from 1 to 30 mn embedded in an amorphous matrix. Sylramic is a polycrystalline stoichiometric silicon carbide fiber consisting of submicron beta-SiC crystallites ranging from 100 to 300 nm. Small amount of TiB2 nanocrystallites (approx. 50 nm) are also present. The LaPO4 coating on Hi-Nicalon fibers consisted of a chain of peanut shape particles having monazite-(La) structure. The coating on Sylramic fibers consisted of two layers. The inner layer was a chain of peanut shape particles having monazite-(La) structure. The outer layer was comprised of much smaller particles with a microcrystalline structure.

Bansal, N. P.↗

NASA NTRS2001

Palladium Implanted Silicon Carbide for Hydrogen Sensing

Silicon carbide is intended for use in fabrication of high-temperature, efficient hydrogen sensors. Traditionally, when a palladium coating is applied on the exposed surface of SiC, the chemical reaction between palladium and hydrogen produces a detectable change in the surface chemical potential. We have produced both a palladium coated SiC as well as a palladium, ion implanted SiC sensor. The palladium implantation was done at 500 C into the Si face of 6H, N-type SiC at various energies, and at various fluences. Then, we measured the hydrogen sensitivity response of each fabricated sensor by exposing them to hydrogen while monitoring the current flow across the p-n junction(s), with respect to time. The sensitivity of each sensor was measured at temperatures between 27 and 300 C. The response of the SiC sensors produced by Pd implantation has revealed a completely different behaviour than the SiC sensors produced by Pd deposition. In the Pd-deposited SiC sensors as well as in the ones reported in the literature, the current rises in the presence of hydrogen at room temperature as well as at elevated temperatures. In the case of Pd-implanted SiC sensors, the current decreases in the presence of hydrogen whenever the temperature is raised above 100 C. We will present the details and conclusions from the results obtained during this meeting.

Muntele, C. I.↗

NASA NTRS2002

High Temperature Corrosion of Silicon Carbide and Silicon Nitride in Water Vapor

Silicon carbide (SiC) and silicon nitride (Si3N4) are proposed for applications in high temperature combustion environments containing water vapor. Both SiC and Si3N4 react with water vapor to form a silica (SiO2) scale. It is therefore important to understand the durability of SiC, Si3N4 and SiO2 in water vapor. Thermogravimetric analyses, furnace exposures and burner rig results were obtained for these materials in water vapor at temperatures between 1100 and 1450 C and water vapor partial pressures ranging from 0.1 to 3.1 atm. First, the oxidation of SiC and Si3N4 in water vapor is considered. The parabolic kinetic rate law, rate dependence on water vapor partial pressure, and oxidation mechanism are discussed. Second, the volatilization of silica to form Si(OH)4(g) is examined. Mass spectrometric results, the linear kinetic rate law and a volatilization model based on diffusion through a gas boundary layer are discussed. Finally, the combined oxidation and volatilization reactions, which occur when SiC or Si3N4 are exposed in a water vapor-containing environment, are presented. Both experimental evidence and a model for the paralinear kinetic rate law are shown for these simultaneous oxidation and volatilization reactions.

Opila, E. J.↗

NASA NTRS2002

Temperature Dependence on the Strength and Stress Rupture Behavior of a Carbon-Fiber Reinforced Silicon Carbide (C/SiC) Composite

Tensile strengths and stress rupture lives of carbon-fiber reinforced silicon carbide (C/SiC) specimens were measured at 800 C and are compared to previously reported 1200 C data. All tests were conducted in an environmental chamber containing 1000 ppm of oxygen in argon. The average 800 C tensile strength of 610 MPa is 10% greater than at 1200 C. Average stress rupture lives at 800 C were 2.5 times longer than those obtained at 1200 C. The difference in the 800 and 1200 C lives is related to the oxidation rate of the reinforcing carbon fibers, which is the primary damage mode of C/SiC composites in oxygen-containing environments.

Verrilli, Michael J.↗