SEARCH · Engineering Papers

Results for “CARRIER MODULATION”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 451 records · Page 25

All sources NASA NTRS DOE OSTI

NASA NTRS1972

Modulation and detection of optical signals

A summary of information is presented which is related to the modulation and detection of information on optical carriers. It emphasizes the treatment of information transfer through an entire system. The most common configurations are considered: intensity modulation, amplitude modulation, frequency or phase modulation, and both direct and coherent detection. In assessing these configurations information capacity and message signal-to-noise ratio are used as a basis of comparison. The physical and geometric treatment of optical heterodyne (or coherent) detection is given.

Goodwin, F. E.↗

NASA NTRS1986

Determination of carrier saturation velocity in high-performance In(y)Ga(1-y)As/Al(x)Ga(1-x)As modulation-doped field-effect transistors (with y between 0 and 0.2)

The relation between the intrinsic transconductance per unit gate width and the carrier saturation velocity, v(sat), is used to determine v(sat) for several high-performance pseudomorphic MODFET's with different InAs mole fractions (y). Measurements of In(y)Ga(1-y)As/AlGaAs MODFET's grown by MBE were found to give accurate v(sat) values at 77 K. Devices with y between 0 and 0.20 were shown to have higher v(sat) than conventional GaAs/AlGaAs MODFET's. An optimum y value for peak v(sat), which may optimize overall device performance, is expected.

Henderson, T. S.↗

NASA NTRS1993

In-situ radio-metric tracking to support navigation for interplanetary missions with multiple spacecraft

Doppler and ranging measurements between spacecraft can be obtained only when the ratio of the total received signal power to noise power density (P(sub t/N(sub 0)) at the receiving spacecraft is sufficiently large that reliable signal detection can be achieved within a reasonable time period. In this paper, the requirements on P(sub t)/N(sub 0) for reliable carrier signal detection is calculated as a function of various system parameters, including characteristics of the spacecraft computing hardware and a priori uncertainty in spacecraft-spacecraft relative velocity and acceleration. Also calculated is the P(sub t)/N(sub 0) requirement for relaible detection of a ranging signal, consistting of a carrier with pseudo-noise phase modulation. Once the P(sub t)/N(sub 0) requirement is determined, then for a given set of assumed spacecraft telecommunication characteristics (transmitted signal power, antenna gains, receiver noise temperatures) it is possible to calculate the maximum range at which a carrier signal or ranging signal may be acquired. A brief error covariance analysis has been conducted to illustrate the utility of in situ Doppler and ranging measurements for Mars approach navigation. The results indicate that navigation accuracies of a few kilometers can be achieved with either data type. The analysis also illustrates dependency of the achievable accuracy on the approach trajectory velocity.

Kahn, Robert D.↗

DOE OSTI2018

Hot‐Electron‐Assisted Femtosecond All‐Optical Modulation in Plasmonics

Abstract The optical Kerr nonlinearity of plasmonic metals provides enticing prospects for developing reconfigurable and ultracompact all‐optical modulators. In nanostructured metals, the coherent coupling of light energy to plasmon resonances creates a nonequilibrium electron distribution at an elevated electron temperature that gives rise to significant Kerr optical nonlinearities. Although enhanced nonlinear responses of metals facilitate the realization of efficient modulation devices, the intrinsically slow relaxation dynamics of the photoexcited carriers, primarily governed by electron–phonon interactions, impedes ultrafast all‐optical modulation. Here, femtosecond (≈190 fs) all‐optical modulation in plasmonic systems via the activation of relaxation pathways for hot electrons at the interface of metals and electron acceptor materials, following an on‐resonance excitation of subradiant lattice plasmon modes, is demonstrated. Both the relaxation kinetics and the optical nonlinearity can be actively tuned by leveraging the spectral response of the plasmonic design in the linear regime. The findings offer an opportunity to exploit hot‐electron‐induced nonlinearities for design of self‐contained, ultrafast, and low‐power all‐optical modulators based on plasmonic platforms.

Taghinejad, Mohammad↗

NASA NTRS1989

Optically controlled absorption modulator based on state filling of In(x)Ga(1-x)As/GaAs quantum wells

The first demonstration of an optically controlled absorption modulator based on state filling in a periodically doped In(x)Ga(1-x)As/GaAs multiple quantum well structure is reported. Differential absorption of approximately 10,000/cm is observed in the quantum wells of the test structure at saturation pump powers. Photoluminescence and time-resolved modulation measurements confirm the predicted behavior of carrier recombination and give a measure of enhanced carrier lifetime of approximately 1 ms. These initial results show the potential for developing these structures into optically addressed spatial light modulators.

Iannelli, J. M.↗

DOE OSTI2022

Module-Level Thermal Interface Material Degradation in HALT

Abstract In this study, thermal interface material (TIM) degradation is driven through highly accelerated life test (HALT) using temperature cycling with a prescribed vibrational acceleration for two commercially available materials having thermal conductivities of 6.0 and 8.5 W/m K. HALT specimens were prepared by applying TIM through a 4-mil stencil over AlSiC baseplates in the shape of those used in Wolfspeed CAS325M12HM2 power electronics modules. Baseplates were mounted onto aluminum carrier blocks with embedded thermocouples to characterize the thermal resistance across the baseplate and TIM layer. Thermal dissipation into the top of the baseplates was provided by a custom heating block, which mimics the size and placement of the die junctions in CAS325 modules, applying power loads of 200, 300, and 400 W. After initial characterization, samples were transferred to the HALT chamber with one set of samples exposed to temperature cycling only (TCO) and the other temperature cycling and vibration (TCV). Both sample sets were cycled between temperature extremes of −40 °C and 180 °C with vibrations applied at a peak acceleration of 3.21 Grms. After hundreds of cycles, samples were reevaluated to assess changes in thermal resistance to provide an accelerated measure of TIM degradation. This allows for reliability prediction of useful lifetime (illustrated in a solar inverter case study herein), as well as to provide a basis for developing an accelerated testing method to related temperature cycling to faster methods of degradation. Such techniques provide a means to develop maintenance schedules for power modules for ensuring sufficient thermal performance over the operating lifetime.

Engineering↗

NASA NTRS2006

Silicon-Based Optical Modulator with Ferroelectric Layer

According to a proposal, a silicon dioxide layer in a high-speed, low-power, silicon- based electro-optical modulator would be replaced by a layer of lead zirconate titanate or other ferroelectric oxide material. The purpose of this modification is to enhance the power performance and functionality of the modulator. In its unmodified form, the particular silicon- based electro-optical modulator is of an advanced design that overcomes the speed limitation of prior silicon-based electro- optical modulators. Whereas modulation frequencies of such devices had been limited to about 20 MHz, this modulator can operate at modulation frequencies as high as 1 GHz. This modulator can be characterized as a silicon-waveguide-based metal oxide/semiconductor (MOS) capacitor phase shifter in which modulation of the index of refraction in silicon is obtained by exploiting the free-charge-carrier-plasma dispersion effect. As shown in the figure, the modulator includes an n-doped crystalline silicon slab (the silicon layer of a silicon- on-insulator wafer) and a p-doped polycrystalline silicon rib with a gate oxide layer (the aforementioned silicon dioxide layer) sandwiched between them. Under accumulation conditions, the majority charge carriers in the silicon waveguide modify the index of refraction so that a phase shift is induced in the optical mode propagating in the waveguide. The advantage of using an MOS capacitor phase shifter is that it is possible to achieve high modulation speed because there are no slow carrier-generation or -recombination processes involved in the accumulation operation. The main advantage of the proposed substitution of a ferroelectric oxide layer for the silicon dioxide layer would arise from the spontaneous polarization effect of the ferroelectric layer: This spontaneous polarization would maintain accumulation conditions in the absence of applied voltage. Consequently, once the device had been switched to a given optical state, it would remain in that state, even in the absence of applied voltage (in other words, even with power turned off). A secondary advantage is that because the ferroelectric layer would have an index of refraction larger than that of silicon dioxide, there could be some reduction of optical losses attributable to fabrication of the modulator

Sheldon, Douglas↗

NASA NTRS1989

Phase-ambiguity resolution for QPSK modulation systems. Part 2: A method to resolve offset QPSK

Part 2 presents a new method to resolve the phase-ambiguity for Offset QPSK modulation systems. When an Offset Quaternary Phase-Shift-Keyed (OQPSK) communications link is utilized, the phase ambiguity of the reference carrier must be resolved. At the transmitter, two different unique words are separately modulated onto the quadrature carriers. At the receiver, the recovered carrier may have one of four possible phases, 0, 90, 180, or 270 degrees, referenced to the nominally correct phase. The IF portion of the channel may cause a phase-sense reversal, i.e., a reversal in the direction of phase rotation for a specified bit pattern. Hence, eight possible phase relationships (the so-called eight ambiguous phase conditions) between input and output of the demodulator must be resolved. Using the In-phase (I)/Quadrature (Q) channel reversal correcting property of an OQPSK Costas loop with integrated symbol synchronization, four ambiguous phase conditions are eliminated. Thus, only four possible ambiguous phase conditions remain. The errors caused by the remaining ambiguous phase conditions can be corrected by monitoring and detecting the polarity of the two unique words. The correction of the unique word polarities results in the complete phase-ambiguity resolution for the OQPSK system.

Nguyen, Tien Manh↗

DOE OSTI2015

Density and mobility effects of the majority carriers in organic semiconductors under light excitation

This study demonstrates that the effect of light excitation on the density and the mobility of the majority carriers can be explored in organic semiconductors by modulated photocurrent spectroscopy. The spectra of phase and amplitude of the modulated photocurrent of pentacene films indicate a significant increase in the density of the photogenerated mobile holes (majority carriers). This increase is accompanied by a comparatively much smaller increase of the steady state photocurrent response which can be reconciled with a decrease in the mobility (μ) of holes. The decrease of μ is supported from an unusual increase of the Y/μ ratio of the out-of-phase modulated photocurrent (Y) signal to the mobility under light excitation. It is proposed that the mobile holes, which are generated from the dissociation of the light-created excitons more likely near the pentacene-substrate interface by electron trapping, populate grain boundaries charging them and producing a downward band bending. As a result, potential energy barriers are build up which limit the transport of holes interacting through trapping-detrapping with deep partially occupied traps in the charged grain boundaries. On the other hand, the transport of holes interacting through trapping-detrapping with empty traps is found unaffected.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

NASA NTRS1995

Compensating For Unbalance In Pulse-Code Phase Modulation

Algorithm proposed for use in pulse-code phase-modulation transmitter in which non-return-to-zero (NRZ) or biphase data modulated directly onto radio-frequency residual carrier signal. Devised to compensate somewhat for effect, upon distant receiver, of unbalance in stream of transmitted data. Formulated to compute combinations of modulation index, data rate, and transmitter power compensating for measured unbalance in transmitted data stream.

Nguyen, Tien M.↗

DOE OSTI2021

Electro-Optic Modulation Using Metal-Free Perovskites

Electro-optic (EO) modulation is of interest to impart information onto an optical carrier. Inorganic crystals—most notably LiNbO 3 and BaTiO 3 —exhibit EO modulation and good stability, but are difficult to integrate with silicon photonic technology. Solution-processed organic EO materials are readily integrated but suffer from thermal degradation at the temperatures required in operating conditions for accelerated reliability studies. Hybrid organic–inorganic metal halide perovskites have the potential to overcome these limitations; however, these have so far relied on heavy metals such as lead and cadmium. Here, we report linear EO modulation using metal-free perovskites, which maintain the crystalline features of the inorganic EO materials and incorporate the flexible functionality of organic EO chromophores. We find that, by introducing a deficiency of cations, we reduce the symmetry in the perovskite crystal and produce thereby an increased EO response. The best-engineered perovskites reported herein showcase an EO coefficient of 14 pm V –1 at a modulation frequency of 80 kHz, an order of magnitude higher than in the nondefective materials. Furthermore, we observe split peaks in the X-ray diffraction and neutron diffraction patterns of the defective sample, indicating that the crystalline structure has been distorted and the symmetry reduced. Density functional theory (DFT) studies link this decreased symmetry to NH 4 + deficiencies. This demonstration of EO from metal-free perovskites highlights their potential in next-generation optical information transmission.

36 MATERIALS SCIENCE↗

NASA NTRS1990

Spread-spectrum code acquisition in the presence of Doppler shift and data modulation

A spread-spectrum code acquisition technique for a direct-sequence (DS) system in the presence of Doppler effect and data modulation is investigated. Both the carrier-frequency offset and code-frequency offset due to severe Doppler effect are considered. The code-chip slipping during the correlation process caused by code-frequency offset can degrade the acquisition performance significantly. However, this issue can be alleviated by compensating code-frequency offset in an appropriate manner. Results are presented for the cases with and without data modulation. Coherent detection is considered when there is no data modulation. If data modulation is present, the authors partition the correlation time into subintervals and the integration results in these subintervals are square-law noncoherently combined for detection. The implementation of this code acquisition technique using the fast Fourier transform (FFT) algorithm is described. The use of theoretical results to estimate the hardware complexity of an actual system is illustrated step by step, showing that implementation is feasible with existing technology. The tradeoff between hardware complexity and acquisition performance is discussed.

Cheng, Unjeng↗

DOE OSTI2018

Spectrally Selective Mirrors with Combined Optical and Thermal Benefit for Photovoltaic Module Thermal Management

Waste heat generated during daytime operation of a solar module will raise its temperature and reduce cell efficiency. In addition to thermalization and carrier recombination, one major source of excess heat in modules is the parasitic absorption of light with sub-bandgap energy. Parasitic absorption can be prevented if sub-bandgap radiation is reflected away from the module. We report on the design considerations and projected changes to module energy yield for photonic reflectors capable of reflecting a portion of sub-bandgap radiation while maintaining or improving transmission of light with energy greater than the semiconductor bandgap. Using a previously developed, self-consistent opto-electro-thermal finite-element simulation, we calculate the total additional energy generated by a module, including various photonic reflectors, and decompose these benefits into thermal and optical effects. We show that the greatest total energy yield improvement comes from photonic mirrors designed for the outside of the glass, but that mirrors placed between the glass and the encapsulant can have significant thermal benefit. We then show that optimal photonic mirror design requires consideration of all angles of incidence, despite unequal amounts of radiation arriving at each angle. We find that optimized photonic mirrors will be omnidirectional in the sense that they have beneficial performance, regardless of the angle of incidence of radiation. By fulfilling these criteria, photonic mirrors can be used at different geographic locations or different tilt angles than their original optimization conditions with only marginal changes in performance. We show designs that improve energy output in Golden, Colorado by 3.7% over a full year. This work demonstrates the importance of considering real-world irradiance and weather conditions when designing optical structures for solar applications.

14 SOLAR ENERGY↗

DOE OSTI2013

Understanding and resolving the discrepancy between differential and actual minority carrier lifetime

Differential light-biased dynamic measurements of charge carrier recombination properties in semiconductors have long been known to yield only differential rather than actual recombination properties. Therefore, the determination of injection-dependent recombination properties from such measurements was previously found to require integration over the entire injection range. Recent investigations of the phase shift between a time-modulated irradiation of silicon samples and excess carrier density reveal a striking analogy to the above findings: the phase shift is greater than the actual effective carrier lifetime in the case of a positive derivative of lifetime with respect to excess carrier density, and vice versa. This work attempts to rearrange the mentioned previous findings in a quantitative theoretical description of light-biased dynamic measurements of effective carrier lifetime. Both light-biased differential lifetime measurements as well as harmonically time-modulated methods without additional bias light are shown to represent a limiting case in a general treatment of light-biased dynamic lifetime measurements derived here. Finally, we sketch a way to obtain actual recombination properties from differential measurements-referred to as a differential-to-actual (d2a) lifetime analysis, which does not require integration over the entire injection range.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

NASA NTRS1989

Digital 8-DPSK Modem For Trellis-Coded Communication

Digital real-time modem processes octuple differential-phase-shift-keyed trellis-coded modulation. Intended for use in communicating data at rate up to 4.8 kb/s in land-mobile satellite channel (Rician fading) of 5-kHz bandwidth at carrier frequency of 1 to 2 GHz. Modulator and demodulator contain digital signal processors performing modem functions. Design flexible in that functions altered via software. Modem successfully tested and evaluated in both laboratory and field experiments, including recent full-scale satellite experiment. In all cases, modem performed within 1 dB of theory. Other communication systems benefitting from this type of modem include land mobile (without satellites), paging, digitized voice, and frequency-modulation subcarrier data broadcasting.

Jedrey, T. C.↗

NASA NTRS2008

Integrated Formation Optical Communication and Estimation System

An architecture has been designed that integrates formation estimation methodologies, precision formation sensing, and high-bandwidth formation communication into a robust, strap-on system that meets knowledge and communication requirements for the majority of planned, precision formation missions. Specifically, the integrated system supports (a) sub-millimeter metrology, (b) multiple greater than 10 Mbps communication channels over a large, 10 deg field-of-view (FOV), and (c) generalized formation estimation methodologies. The sensing sub-system consists of several absolute, metrology gauges with up to 0.1 mm precision that use amplitude-modulated lasers and a LISA-heritage phase meter. Since amplitude modulation is used, inexpensive and robust diode lasers may be used instead of complex, frequency-stabilized lasers such as for nanometer-level metrology. The metrology subsystem laser transceivers consist of a laser diode, collecting optics, and an avalanche photo diode (APD) for detecting incoming laser signals. The APD is necessary since received power is small due to the large (for optical applications) FOV. The phase meter determines the phase of the incoming amplitude modulations as measured by the APD. This phase is equivalent to time-of-flight and, therefore, distance. By placing three laser transceivers on each spacecraft, 18 clock-offset-corrupted distances are calculated. These measurements are communicated and averaged to obtain nine correct distances between the transceivers. From these correct distances, the range and bearing between spacecraft and their relative attitude are determined. Next, communication is integrated on the laser carrier through spectral separation. Metrology amplitude modulations are limited to the 45-50 MHz band, leaving 0-45 MHz for communication. Through careful design of coding scheme, error correction, and filters, six independent 10 Mbps receive channels are possible. Hence, a spacecraft can simultaneously broadcast at 10 Mbps and listen to six other spacecraft. The integrated sensing and communication architecture has been developed, as have formation estimation methodologies that allow the sensing topology to reconfigure as spacecraft maneuver. A bench-top implementation of the integrated sensing and communication architecture is in progress. The final, multiple sensing/communication systems will be tied together via formation estimation algorithms that are also undergoing further development.

Scharf, Daniel↗

DOE OSTI2015

Site-Specific Substitutional Boron Doping of Semiconducting Armchair Graphene Nanoribbons

A fundamental requirement for the development of advanced electronic device architectures based on graphene nanoribbon (GNR) technology is the ability to modulate the band structure and charge carrier concentration by substituting specific carbon atoms in the hexagonal graphene lattice with p- or n-type dopant heteroatoms. Here we report the atomically precise introduction of group III dopant atoms into bottom-up fabricated semiconducting armchair GNRs (AGNRs). Trigonal-planar B atoms along the backbone of the GNR share an empty p-orbital with the extended π-band for dopant functionality. Scanning tunneling microscopy (STM) topography reveals a characteristic modulation of the local density of states along the backbone of the GNR that is superimposable with the expected position and concentration of dopant B atoms. First-principles calculations support the experimental findings and provide additional insight into the band structure of B-doped 7-AGNRs.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2024

High-performance silicon photonic single-sideband modulators for cold-atom interferometry

The laser system is the most complex component of a light-pulse atom interferometer (LPAI), controlling frequencies and intensities of multiple laser beams to configure quantum gravity and inertial sensors. Its main functions include cold-atom generation, state preparation, state-selective detection, and generating a coherent two-photon process for the light-pulse sequence. To achieve substantial miniaturization and ruggedization, we integrate key laser system functions onto a photonic integrated circuit. Our study focuses on a high-performance silicon photonic suppressed-carrier single-sideband (SC-SSB) modulator at 1560 nanometers, capable of dynamic frequency shifting within the LPAI. By independently controlling radio frequency (RF) channels, we achieve 30-decibel carrier suppression and unprecedented 47.8-decibel sideband suppression at peak conversion efficiency of –6.846 decibels (20.7%). We investigate imbalances in both amplitudes and phases between the RF signals. Using this modulator, we demonstrate cold-atom generation, state-selective detection, and atom interferometer fringes to estimate gravitational acceleration, g ≈ 9.77 ± 0.01 meters per second squared, in a rubidium ( 87 Rb) atom system.

47 OTHER INSTRUMENTATION↗