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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 451 records · Page 25
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Charge Carrier Transport and Deep Levels Recharge in Avalanche S-Diodes Based on GaAs

Carrier transport and deep-level recharging in semiconductor avalanche S-diode structures have been investigated. Gallium-arsenide n{sup +}–π–ν–n structures with the diffusion distribution of deep iron acceptors have been studied. It has been found by solving the continuity and Poisson equations with the use of a commercial software that the electron injection affects the avalanche breakdown voltage and the spacecharge region broadens due to capture of avalanche holes on negative iron ions in the π-region. It is demonstrated by comparing the results of numerical calculation with the experimental data that the S-shaped I–V characteristic of the diffusion avalanche S-diodes cannot be explained within the previously proposed mechanism of capture of avalanche holes on the deep iron levels.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Nonlinearity of Volt–Ampere Characteristics of Homogeneous Compensated Detector GaAs Structures

The results of a study of carrier transfer and recharging of deep levels in semiconductor structures for ionizing radiation detectors are presented. Resistive-type arsenide–gallium structures with Schottky barriers and uniform distribution of deep chromium acceptors and donor EL2 centers have been studied. Solving the continuity and Poisson equations using the commercial design package, the effect of the volume depletion of detector structures by electrons with an increase in the applied voltage has been observed. It is established that the nonlinearity of the volt-ampere characteristics of structures occurs due to a change in the type of conductivity upon transition from an equilibrium to a nonequilibrium state. In this case, structures with initial (equilibrium) hole-type conductivity have close to linear volt–ampere characteristics.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

III-V Solar Cells with Novel Epitaxial Lift-off Architectures for Extended Substrate Reuse for Low-cost Manufacturing

The highest solar cell efficiencies have been achieved with III-V photovoltaics (PV). Still, the use of III-V materials in terrestrial applications has been very limited, mainly because of their high cost. The high cost is primarily due to the expensive Ge or GaAs wafers which could amount up to one-half of the total module cost! A prominent approach to reduce the impact of the high cost of substrates used for III-V PV is through re-use of the wafer substrates by Epitaxial Lift-Off (ELO). Typically, using a sacrificial layer such as AlAs, the device part of the cell is lifted off, leaving behind the substrate for re-use for fabrication of the next device. While conversion efficiency as high as 29.1% has been achieved by ELO method, chemical mechanical polishing (CMP) of the substrate is required which significantly adds to the overall solar cell cost. In this project, we have developed a novel ELO architecture for single junction gallium arsenide (GaAs) solar cells that will not require CMP of the substrate for re-use. Multiple reuses of GaAs wafers have been demonstrated with no CMP, without degradation in solar cell efficiency. Also, the solar cells have been successfully lifted off and transferred to inexpensive substrates with less than 2% change in efficiency. By elimination of the CMP process, which is the highest cost component of III-V solar cells made by conventional ELO method (~$10/W), and decreasing the substrate cost by multiple re-uses, the developed technology could be a leap forward in significantly reducing the cost of III-V photovoltaics.

14 SOLAR ENERGY↗
DOE OSTI2015

Synthesis, Crystal and Electronic Structures of the Pnictides AE 3 TrPn 3 (AE = Sr, Ba; Tr = Al, Ga; Pn = P, As)

New ternary arsenides AE 3 TrAs 3 (AE = Sr, Ba; Tr = Al, Ga) and their phosphide analogs Sr 3 GaP 3 and Ba 3 AlP 3 have been prepared by reactions of the respective elements at high temperatures. Single-crystal X-ray diffraction studies reveal that Sr 3 AlAs 3 and Ba 3 AlAs 3 adopt the Ba 3 AlSb 3 -type structure (Pearson symbol oC56, space group Cmce, Z = 8). This structure is also realized for Sr 3 GaP 3 and Ba 3 AlP 3 . Likewise, the compounds Sr 3 GaAs 3 and Ba 3 GaAs 3 crystallize with the Ba 3 GaSb 3 -type structure (Pearson symbol oP56, space group Pnma, Z = 8). Both structures are made up of isolated pairs of edge-shared AlPn 4 and GaPn 4 tetrahedra (Pn = pnictogen, i.e., P or As), separated by the alkaline-earth Sr 2+ and Ba 2+ cations. In both cases, there are no homoatomic bonds, hence, regardless of the slightly different atomic arrangements, both structures can be rationalized as valence-precise [AE 2+ ] 3 [Tr 3+ ][Pn 3- ] 3 , or rather [AE 2+ ] 6 [Tr 2 Pn 6 ] 12- , i.e., as Zintl phases.

36 MATERIALS SCIENCE↗
NASA NTRS1963

Radiation studies on gaas and si devices.

Effects of nuclear radiation on gallium arsenide and silicon solar cells, noting performance difference in terms of initial lifetime and photo- absorption process

GALLIUM ARSENIDE↗