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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Testing at NASA JSC and COMDEV shows that Commercial Off the Shelf (COTS) Li Ion cells can not be used in high voltage batteries safely without considering the voltage stresses that may be put on the protective devices in them during failure modes.
The present invention provides high capacity and high voltage Li-ion batteries that have a carbonaceous cathode and a nonaqueous electrolyte solution comprising LiF salt and an anion receptor that binds the fluoride ion. The batteries can comprise dual intercalating electrode Li ion batteries. Methods of the present invention use a cathode and electrode pair, wherein each of the electrodes reversibly intercalate ions provided by a LiF salt to make a high voltage and high specific capacity dual intercalating electrode Li-ion battery. The present methods and systems provide high-capacity batteries particularly useful in powering devices where minimizing battery mass is important.
proposed integrated circuit would translate (1) a pair of input signals having a low differential potential and a possibly high common-mode potential into (2) a pair of output signals having the same low differential potential and a low common-mode potential. As used here, "low" and "high" refer to potentials that are, respectively, below or above the nominal supply potential (3.3 V) at which standard complementary metal oxide/semiconductor (CMOS) integrated circuits are designed to operate. The input common-mode potential could lie between 0 and 10 V; the output common-mode potential would be 2 V. This translation would make it possible to process the pair of signals by use of standard 3.3-V CMOS analog and/or mixed-signal (analog and digital) circuitry on the same integrated-circuit chip. A schematic of the circuit is shown in the figure. Standard 3.3-V CMOS circuitry cannot withstand input potentials greater than about 4 V. However, there are many applications that involve low-differential-potential, high-common-mode-potential input signal pairs and in which standard 3.3-V CMOS circuitry, which is relatively inexpensive, would be the most appropriate circuitry for performing other functions on the integrated-circuit chip that handles the high-potential input signals. Thus, there is a need to combine high-voltage input circuitry with standard low-voltage CMOS circuitry on the same integrated-circuit chip. The proposed circuit would satisfy this need. In the proposed circuit, the input signals would be coupled into both a level-shifting pair and a common-mode-sensing pair of CMOS transistors. The output of the level-shifting pair would be fed as input to a differential pair of transistors. The resulting differential current output would pass through six standoff transistors to be mirrored into an output branch by four heterojunction bipolar transistors. The mirrored differential current would be converted back to potential by a pair of diode-connected transistors, which, by virtue of being identical to the input transistors, would reproduce the input differential potential at the output
Weibull grading test is a powerful technique that allows selection and reliability rating of solid tantalum capacitors for military and space applications. However, inaccuracies in the existing method and non-adequate acceleration factors can result in significant, up to three orders of magnitude, errors in the calculated failure rate of capacitors. This paper analyzes deficiencies of the existing technique and recommends more accurate method of calculations. A physical model presenting failures of tantalum capacitors as time-dependent-dielectric-breakdown is used to determine voltage and temperature acceleration factors and select adequate Weibull grading test conditions. This model is verified by highly accelerated life testing (HALT) at different temperature and voltage conditions for three types of solid chip tantalum capacitors. It is shown that parameters of the model and acceleration factors can be calculated using a general log-linear relationship for the characteristic life with two stress levels.
Geomagnetically induced currents (GIC) affecting the performance of high-voltage power transmission systems are one of the most significant hazards space weather poses on the operability of critical US infrastructure. The severity of the threat was emphasized, for example, in two recent reports: the National Research Council (NRC) report "Severe Space Weather Events--Understanding Societal and Economic Impacts: A Workshop Report" and the North American Electric Reliability Corporation (NERC) report "HighImpact, Low-Frequency Event Risk to the North American Bulk Power System." The NRC and NERC reports demonstrated the important national security dimension of space weather and GIC and called for comprehensive actions to forecast and mitigate the hazard. In this paper we will give a brief overview of space weather storms and accompanying geomagnetic storm events that lead to GIC. We will also review the fundamental principles of how GIC can impact the power transmission systems. Space weather has been a subject of great scientific advances that have changed the wonder of the past to a quantitative field of physics with true predictive power of today. NASA's Solar Shield system aimed at forecasting of GIC in the North American high-voltage power transmission system can be considered as one of the ultimate fruits of those advances. We will review the fundamental principles of the Solar Shield system and provide our view of the way forward in the science of GIC.
A voltage-controlled oscillator (VCO) that operates in the frequency range from 77.5 to 83.5 GHz has been constructed in the form of a monolithic microwave integrated circuit (MMIC) that includes high-electron-mobility transistors (HEMTs). This circuit is a prototype of electronically tunable signal sources in the 75-to-110-GHz range, needed for communication, imaging, and automotive radar applications, among others. This oscillator (see Figure 1) includes two AlInAs/GaInAs/InP HEMTs. One HEMT serves mainly as an oscillator gain element. The other HEMT serves mainly as a varactor for controlling the frequency: the frequency-control element is its gate-to-source capacitance, which is varied by changing its gate supply voltage. The gain HEMT is biased for class-A operation (meaning that current is conducted throughout the oscillation cycle). Grounded coplanar waveguides are used as impedance-matching transmission lines, the input and output matching being chosen to sustain oscillation and maximize output power. Air bridges are placed at discontinuities to suppress undesired slot electromagnetic modes. A high density of vias is necessary for suppressing a parallel-plate electromagnetic mode that is undesired because it can propagate energy into the MMIC substrate. Previous attempts at constructing HEMT-based oscillators yielded circuits with relatively low levels of output power and narrow tuning ranges. For example, one HEMT VCO reported in the literature had an output power of 7 dBm (.5 mW) and a tuning range 2-GHz wide centered approximately at a nominal frequency of 77 GHz. In contrast, as shown in Figure 2, the present MMIC HEMT VCO puts out a power of 12.5 dBm (.18 mW) or more over the 6-GHz-wide frequency range from 77.5 to 83.5 GHz
The present invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or pulsed semiconductor laser diode device. A series of relatively short and low current monitor pulses are applied to the laser diode in the period between the main drive current pulses necessary to cause the semiconductor to lase. At the sufficiently low current level of the monitor pulses, the laser diode device does not lase and behaves similar to an electronic diode. The voltage across the laser diode resulting from each of these low current monitor pulses is measured with a high degree of precision. The junction temperature is then determined from the measured junction voltage using their known linear relationship.
The frequency to voltage converter analog front end evaluation prototype (F2V AFE) is an evaluation board designed for comparison of different methods of accurately extracting the frequency of a sinusoidal input signal. A configurable input stage is routed to one or several of five separate, configurable filtering circuits, and then to a configurable output stage. Amplifier selection and gain, filter corner frequencies, and comparator hysteresis and voltage reference are all easily configurable through the use of jumpers and potentiometers.
A power processing unit for a 15 kW Hall thruster is under development at NASA Glenn Research Center. The unit produces up to 400 VDC with two parallel 7.5 kW discharge modules that operate from a 300 VDC nominal input voltage. Silicon carbide MOSFETs and diodes were used in this design because they were the best choice to handle the high voltage stress while delivering high efficiency and low specific mass. Efficiencies in excess of 97 percent were demonstrated during integration testing with the NASA-300M 20 kW Hall thruster. Electromagnet, cathode keeper, and heater supplies were also developed and will be integrated with the discharge supply into a vacuum-rated brassboard power processing unit with full flight functionality. This design could be evolved into a flight unit for future missions that requires high power electric propulsion.
NASA Science Mission Directorate's In-Space Propulsion Technology Program is sponsoring the development of a 3.5 kW-class engineering development unit Hall thruster for implementation in NASA science and exploration missions. NASA Glenn and Aerojet are developing a high fidelity high voltage Hall accelerator that can achieve specific impulse magnitudes greater than 2,700 seconds and xenon throughput capability in excess of 300 kilograms. Performance, plume mappings, thermal characterization, and vibration tests of the high voltage Hall accelerator engineering development unit have been performed. Performance test results indicated that at 3.9 kW the thruster achieved a total thrust efficiency and specific impulse of 58%, and 2,700 sec, respectively. Thermal characterization tests indicated that the thruster component temperatures were within the prescribed material maximum operating temperature limits during full power thruster operation. Finally, thruster vibration tests indicated that the thruster survived the 3-axes qualification full-level random vibration test series. Pre and post-vibration test performance mappings indicated almost identical thruster performance. Finally, an update on the development progress of a power processing unit and a xenon feed system is provided.
Introduction of BME capacitors to high-reliability electronics as a replacement for PME capacitors requires better understanding of changes in performance and reliability of MLCCs to set justified screening and qualification requirements. In this work, absorption and leakage currents in various lots of commercial and military grade X7R MLCCs rated to 100V and less have been measured to reveal difference in behavior of PME and BME capacitors in a wide range of voltages and temperatures. Degradation of leakage currents and failures in virgin capacitors and capacitors with introduced cracks has been studied at different voltages and temperatures during step stress highly accelerated life testing. Mechanisms of charge absorption, conduction and degradation have been discussed and a failure model in capacitors with defects suggested.
The purpose of this effort was to advance the selection, characterization, and modeling of a propulsion electric grid for a Turboelectric Distributed Propulsion (TeDP) system for transport aircraft. The TeDP aircraft would constitute a miniature electric grid with 50 MW or more of total power, two or more generators, redundant transmission lines, and multiple electric motors driving propulsion fans. The study proposed power system architectures, investigated electromechanical and solid state circuit breakers, estimated the impact of the system voltage on system mass, and recommended DC bus voltage range. The study assumed an all cryogenic power system. Detailed assumptions within the study include hybrid circuit breakers, a two cryogen system, and supercritical cyrogens. A dynamic model was developed to investigate control and parameter selection.
Although considerable interest has been shown in the space-charge analysis of low-pressure (collisionless case) thermionic diodes, there is a conspicuous lack in the presentation of results in a way that allows direct comparison with experiment. The current-voltage curve of this report was, therefore, computed for a typical case within the realm of experimental interest. The model employed in this computation is shown in Fig. 1 and is defined by the limiting potential distributions [curves (a) and (b)]. Curve (a) represents the potential V as a monotonic function of position with a slope of zero at the anode; curve (b) is similarly monotonic with a slope of zero at the cathode. It is assumed that by a continuous variation of the anode voltage, the potential distributions vary continuously from one limiting form to the other. Although solutions for infinitely spaced electrodes show that spatically oscillatory potential distributions may exist, they have been neglected in this computation.
The International Space Station (ISS) continues to be a world-class space research laboratory after over 15 years of operations, and it has proven to be a fantastic resource for observing spacecraft floating potential variations related to high voltage solar array operations in Low Earth Orbit (LEO). Measurements of the ionospheric electron density and temperature along the ISS orbit and variations in the ISS floating potential are obtained from the Floating Potential Measurement Unit (FPMU). In particular, rapid variations in ISS floating potential during solar array operations on time scales of tens of milliseconds can be recorded due to the 128 Hz sample rate of the Floating Potential Probe (FPP) pro- viding interesting insight into high voltage solar array interaction with the space plasma environment. Comparing the FPMU data with the ISS operations timeline and solar array data provides a means for correlating some of the more complex and interesting transient floating potential variations with mission operations. These complex variations are not reproduced by current models and require further study to understand the underlying physical processes. In this paper we present some of the floating potential transients observed over the past few years along with the relevant space environment parameters and solar array operations data.
Reliability of base metal electrode (BME) multilayer ceramic capacitors (MLCCs) that until recently were used mostly in commercial applications, have been improved substantially by using new materials and processes. Currently, the inception of intrinsic wear-out failures in high quality capacitors became much greater than the mission duration in most high-reliability applications. However, in capacitors with defects degradation processes might accelerate substantially and cause infant mortality failures. In this work, a physical model that relates the presence of defects to reduction of breakdown voltages and decreasing times to failure has been suggested. The effect of the defect size has been analyzed using a thermal runaway model of failures. Adequacy of highly accelerated life testing (HALT) to predict reliability at normal operating conditions and limitations of voltage acceleration are considered. The applicability of the model to BME capacitors with cracks is discussed and validated experimentally.
NASA Goddard Space Flight Center (GSFC) has successfully developed and tested a custom-designed low-noise multi-channel digitizer (MCD) application specific integrated circuit (ASIC) for operation in harsh radiation environments. The MCD-ASIC is optimized for low-frequency and low-voltage signal measurements from sensors and transducers. It has 20 input channels where each channel is comprised of auto-zeroed chopper variable-gain amplifier, post amplifier, and a second order ∑∆ modulator. ∑∆ analog-to-digital converter (ADC) relies on oversampling and noise shaping to achieve high-resolution conversion. However, the MCD-ASIC requires digital filtering and decimation to convert the output single bit streams from the ADC to useful data words. A parallel digital platform such as a field-programmable-gate-array (FPGA) is highly suitable to fully leverage the capabilities of the MCD-ASIC. The FPGA controls the MCD-ASIC via serial peripheral interface (SPI) protocol and acquires data from it. A Python-script communicates with the FPGA board through a USB interface on a cross operating platform. Using this architecture, the system is capable of monitoring up to 20 voltage readout channels simultaneously in a real-time manner. Each channel’s parameters can be programmed independently allowing maximum user versatility. In this paper, we present analysis of the analog front-end, the implementation of the digital processing unit on the FPGA, and provide noise performance results from the MCD-ASIC readout.
Overview of Convergent Aeronautics Solutions (CAS) High Voltage Hybrid Electric Propulsion (HVHEP) activity. CAS HVHEP activity demonstrated feasibility of variable frequency, variable high voltage power system using doubly fed electric machines (DFM), and provided 90% reduction in power electronic weight for 35 megawatt system. DFM enables multi-phase (9) ac operation, with enhanced control and integrated protection methods for improved safety through minimization of fault energy.
The purpose of this testing was to characterize Analog Devices’ AD8065 FastFET amplifier for low-dose rate (LDR) total ionizing dose (TID) response based on the Lucy project requirements and will be used on the L’ORRI instrument being built by Johns Hopkins University Applied Physics Lab. The AD8065 is a voltage feedback amplifier with FET inputs developed with the proprietary eXtra Fast Complementary Bipolar (XFCB) process. The amplifier boasts low noise operation and very high input impedance with a wide supply voltage range.