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At least 433 records · Page 24

Review of End-of-Life Thermal Control Coating Performance

White thermal control coatings capable of long term performance are needed for Fission Surface Power (FSP) where heat from a nuclear reactor placed on the surface of the Moon must be rejected to the environment. The threats to thermal control coating durability on the lunar surface are electrons, protons, and ultraviolet radiation. The anticipated damage to the coating is a gradual darkening over time. The increase in solar absorptance would, in essence, add a cyclic heat load to the radiator. The greater the darkening, the greater the added heat load. The cyclic heat load could ultimately impart a cyclic influence on FSP system performance. No significant change in emittance is anticipated. Optical properties degradation data were found in the open literature for the Z-93 series of thermal control paints. Additional optical properties degradation data were found from the Lunar Orbiter V mission, the Optical Properties Monitor, and the Materials International Space Station Experiment. Anticipated end-of-life thermal control coating performance for a FSP installation is postulated. With the FSP installation located away from landing and launching areas, and out of line-of-sight, lunar dust from human activity may not be a threat. The benefits of investing in next generation thermal control paint chemistry are explored.

Jaworske, Donald A.↗

Measurements of Density of Liquid Oxides with an Aero-Acoustic Levitator

Densities of liquid oxide melts with melting temperatures above 2000 °C are required to establish mixing models in the liquid state for thermodynamic modeling and advanced additive manufacturing and laser welding of ceramics. Accurate measurements of molten rare earth oxide density were recently reported from experiments with an electrostatic levitator on board the International Space Station. In this work, we present an approach to terrestrial measurements of density and thermal expansion of liquid oxides from high-speed videography using an aero-acoustic levitator with laser heating and machine vision algorithms. The following density values for liquid oxides at melting temperature were obtained: Y 2 O 3 4.6 ± 0.15; Yb 2 O 3 8.4 ± 0.2; Zr 0.9 Y 0.1 O 1.95 4.7 ± 0.2; Zr 0.95 Y 0.05 O 1.975 4.9 ± 0.2; HfO 2 8.2 ± 0.3 g/cm 3 . The accuracy of density and thermal expansion measurements can be improved by employing backlight illumination, spectropyrometry and a multi-emitter acoustic levitator.

36 MATERIALS SCIENCE↗

Electrically Conductive White Thermal-Control Paint

Report describes development of white thermal-control paint intended for use on spacecraft. Paint required to exhibit combination of high emittance (equal to or greater than 0.90), low absorptance (equal to or less than 0.20), and electrical conductivity sufficient to prevent charging with static electricity to potentials beyond range of plus or minus 10 V.

Hsieh, Cheng-Hsien↗

Optical Coating Performance and Thermal Structure Design for Heat Reflectors of JWST Electronic Control Unit

The James Webb Space Telescope (JWST) consists of an infrared-optimized Optical Telescope Element (OTE) that is cooled down to 40 degrees Kelvin. A second adjacent component to the OTE is the Integrated Science Instrument Module, or ISIM. This module includes the electronic compartment, which provides the mounting surfaces and ambient thermally controlled environment for the instrument control electronics. Dissipating the 200 watts generated from the ISIM structure away from the OTE is of paramount importance so that the spacecraft's own heat does not interfere with the infrared light detected from distant cosmic sources. This technical challenge is overcome by a thermal subsystem unit that provides passive cooling to the ISIM control electronics. The proposed design of this thermal radiator consists of a lightweight structure made out of composite materials and low-emittance metal coatings. In this paper, we will present characterizations of the coating emittance, bidirectional reflectance, and mechanical structure design that will affect the performance of this passive cooling system.

Quijada, Manuel A.↗

High efficiency tantalum-based ceramic composite structures

Tantalum-based ceramics are suitable for use in thermal protection systems. These composite structures have high efficiency surfaces (low catalytic efficiency and high emittance), thereby reducing heat flux to a spacecraft during planetary re-entry. These ceramics contain tantalum disilicide, molybdenum disilicide and borosilicate glass. The components are milled, along with a processing aid, then applied to a surface of a porous substrate, such as a fibrous silica or carbon substrate. Following application, the coating is then sintered on the substrate. The composite structure is substantially impervious to hot gas penetration and capable of surviving high heat fluxes at temperatures approaching 3000.degree. F. and above.

Stewart, David A.↗

NASA Goddard Thermal Technology Roadmap 2023

This presentation provides an overview of recent thermal technology development activities carried out at NASA's Goddard Space Flight Center. Topics include two-phase systems (heat pipes, loop heat pipes and phase change materials), variable emittance systems, advanced coatings and high conductivity materials. The application of these activities to specific space missions is also discussed.

Thermal, technology, roadmaps↗

High temperature glass thermal control structure and coating

A high temperature stable and solar radiation stable thermal control coating is described which is useful either as such, applied directly to a member to be protected, or applied as a coating on a re-usable surface insulation (RSI). It has a base coat layer and an overlay glass layer. The base coat layer has a high emittance, and the overlay layer is formed from discrete, but sintered together glass particles to give the overlay layer a high scattering coefficient. The resulting two-layer space and thermal control coating has an absorptivity-to-emissivity ratio of less than or equal to 0.4 at room temperature, with an emittance of 0.8 at 1200 F. It is capable of exposure to either solar radiation or temperatures as high as 2000 F without significant degradation. When used as a coating on a silica substrate to give an RSI structure, the coatings of this invention show significantly less reduction in emittance after long term convective heating and less residual strain than prior art coatings for RSI structures.

Stewart, D. A.↗

Thermionic energy converter investigations

This paper presents evaluation of a variety of thermionic converter configurations to obtain improved efficiency. A variable-spacing diode using an iridium emitter gave emission properties comparable to platinum, but the power output from a sintered LaB6 collector diode was not consistent with its work function. Reflectivities above 0.5 were measured at thermal energies on oxygenated-cesiated surfaces using a field emission retarding potential gun. Performance of converters with structured electrodes and the characteristics of a pulsed triode were studied as a function of emitter, collector, cesium reservoir, interelectrode spacing, xenon pressure, and pulsing parameters.

Goodale, D. B.↗

Design of a three-layer antireflection coating for high efficiency indium phosphide solar cells using a chemical oxide as first layer

It is well known that the behavior of III-V compound based solar cells is largely controlled by their surface, since the majority of light generated carriers (63% for GaAs and 79% for InP) are created within 0.2 mu m of the surface of the illuminated cell. Consequently, the always observed high surface recombination velocity (SRV) on these cells is a serious limiting factor for their high efficiency performance, especially for those with p-n junction made by either thermal diffusion or ion implantation. A good surface passivation layer, ideally a grown oxide as opposed to a deposited one, will cause a significant reduction in the SRV without adding interface problems, thus improving the performance of III-V compound based solar cells. Another significant benefit to the overall performance of the solar cells can be achieved by a substantial reduction of their large surface optical reflection by the use of a well designed antireflection (AR) coating. In this paper, we demonstrate the effectiveness of using a chemically grown thermally and chemically stable oxide, not only for surface passivation but also as an integral part of a 3-layer AR coating for thermally diffused p+n InP solar cells. A phosphorus-rich interfacial oxide, In(PO3)3, is grown at the surface of the p+ emitter using an etchant based on HNO3, o-H3PO4 and H2O2. This oxide has the unique properties of passivating the surface as well as serving as an efficient antireflective layer yielding a measured record high AMO open-circuit voltage of 890.3 mV on a thermally diffused InP(Cd,S) solar cell. Unlike conventional single layer AR coatings such as ZnS, Sb2O3, SiO or double layer AR coatings such as ZnS/MgF2 deposited by e-beam or resistive evaporation, this oxide preserves the stoichiometry of the InP surface. We show that it is possible to design a three-layer AR coating for a thermally diffused InP solar cell using the In(PO3)3 grown oxide as the first layer and Al2O3 and MgF2 as the second and third layers respectively, so as to yield an overall theoretical reflectance of less than 2%. Since chemical oxides are readily grown on III-V semiconductors materials, the technique of using the grown oxide layer to both passivate the surface as well as serve as the first of a multilayer AR coating should work well for all III-V compound-based solar cells.

Moulot, Jacques↗

Characterization of quantum dot-like emitters in programmable arrays of nanowrinkles of 1L-WSe2

When combined with nanostructured substrates, two-dimensional semiconductors can be engineered with strain to tailor light–matter interactions on the nanoscale. Recently, room-temperature nanoscale exciton localization with controllable wrinkling in 1L-WSe2 was achieved using arrays of gold nanocones. Here, the characterization of quantum dot-like states and single-photon emitters in the 1L-WSe2/nanocone system is reported. The nanocones induce a wide range of strains, and as a result, a diverse ensemble of narrowband, potential single-photon emitters is observed. The distribution of emitter energies reveals that most reside in two spectrally isolated bands, leaving a less populated intermediate band that is spectrally isolated from the ensembles. The spectral isolation is advantageous for high-purity quantum light emitters, and anti-bunched emission from one of these states is confirmed up to 25 K. Although the spatial distribution of strain is expected to influence the orientation of the transition dipoles of the emitters, multimodal emission polarization anisotropy and atomic force microscopy reveal that the macroscopic orientation of the wrinkles is not a good predictor of dipole orientation. Finally, the emission is found to change with thermal cycling from 4 to 290 K and back to 4 K, highlighting the need to control factors such as temperature-induced strain to enhance the robustness of this quantum emitter platform. The initial characterization here shows that controlled nanowrinkles of 1L-WSe2 generate quantum light in addition to uncovering potential challenges that need to be addressed for their adoption into quantum photonic technologies.

Physics↗

Thermophotovoltaic efficiency of 40%

Thermophotovoltaics (TPVs) convert predominantly infrared wavelength light to electricity via the photovoltaic effect, and can enable approaches to energy storage and conversion that use higher temperature heat sources than the turbines that are ubiquitous in electricity production today. Since the first demonstration of 29% efficient TPVs (Fig. 1a) using an integrated back surface reflector and a tungsten emitter at 2,000°C (ref. 10), TPV fabrication and performance have improved. However, despite predictions that TPV efficiencies can exceed 50%, the demonstrated efficiencies are still only as high as 32%, albeit at much lower temperatures below 1,300 C (refs. 13,14,15). Here we report the fabrication and measurement of TPV cells with efficiencies of more than 40% and experimentally demonstrate the efficiency of high-bandgap tandem TPV cells. The TPV cells are two-junction devices comprising III–V materials with bandgaps between 1.0 and 1.4 eV that are optimized for emitter temperatures of 1,900–2,400°C. The cells exploit the concept of band-edge spectral filtering to obtain high efficiency, using highly reflective back surface reflectors to reject unusable sub-bandgap radiation back to the emitter. A 1.4/1.2 eV device reached a maximum efficiency of (41.1 ± 1)% operating at a power density of 2.39 W cm –2 and an emitter temperature of 2,400°C. A 1.2/1.0 eV device reached a maximum efficiency of (39.3 ± 1)% operating at a power density of 1.8 W cm–2 and an emitter temperature of 2,127°C. These cells can be integrated into a TPV system for thermal energy grid storage to enable dispatchable renewable energy. This creates a pathway for thermal energy grid storage to reach sufficiently high efficiency and sufficiently low cost to enable decarbonization of the electricity grid.

14 SOLAR ENERGY↗

Electrical Tuning of Tin-Vacancy Centers in Diamond

Group-IV color centers in diamond have attracted significant attention as solid-state spin qubits because of their excellent optical and spin properties. Among these color centers, the tin-vacancy (Sn-V - ) center is of particular interest because its large ground-state splitting enables long spin coherence times at temperatures above 1 K. However, color centers typically suffer from inhomogeneous broadening, which can be exacerbated by nanofabrication-induced strain, hindering the implementation of quantum nodes emitting indistinguishable photons. Although strain and Raman tuning have been investigated as promising tuning techniques to overcome the spectral mismatch between distinct group-IV color centers, other approaches need to be explored to find methods that can offer more localized control without sacrificing emission intensity. Here, we study the electrical tuning of Sn-V - centers in diamond via the direct-current Stark effect. We demonstrate a tuning range beyond 1.7 GHz. We observe both quadratic and linear dependence on the applied electric field. Further, we also confirm that the tuning effect we observe is a result of the applied electric field and is distinct from thermal tuning due to Joule heating. Stark tuning is a promising avenue toward overcoming detunings between emitters and enabling the realization of multiple identical quantum nodes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Advanced passive radiator for spaceborne cryogenic cooling

A novel design to improve the cooling capability of spaceborne cryogenic passive radiators is described. The design is based on the use of lightweight angled radiation shields, low-conductance structural supports, and a separate detachable launch-support system to reduce the parasitic heat leaks from the warm spacecraft to the cold radiator. The effectiveness of this design is demonstrated by thermal-vacuum-chamber experiments which indicate that the angled-radiation-shield assembly has an effective emittance that is an order of magnitude lower than that of the best multilayer insulation used in flight. Performance predictions based on the experiments and analytical model indicate that an advanced passive-radiator design based on this technology would be between 10 and 57% of the size and 10 and 36% of the mass of the best state-of-the-art passive radiators and would make lower temperatures (< 60 K) and larger heat loads practical. The cooling requirements of many new spaceborne instruments could be accommodated by application of this new passive-radiator design.

Steven Bard↗

Design of a Three-Layer Antireflection Coating for High Efficiency Indium Phosphide Solar Cells Using a Chemical Oxide as First Layer

It is well known that the behavior of III-V compound based solar cells is largely controlled by their surface, since the majority of light generated carriers (63% for GaAs and 79% for InP) are created within 0.2 microns of the illuminated surface of the cell. Consequently, the always observed high surface recombination velocity (SRV) on these cells is a serious limiting factor for their high efficiency performance, especially for those with the p-n junction made by either thermal diffusion or ion implantation. A good surface passivation layer, ideally, a grown oxide as opposed to a deposited one, will cause a significant reduction in the SRV without adding interface problems, thus improving the performance of III-V compound based solar cells. Another significant benefit to the overall performance of the solar cells can be achieved by a substantial reduction of their large surface optical reflection by the use of a well designed antireflection (AR) coating. In this paper, we demonstrate the effectiveness of using a chemically grown, thermally and chemically stable oxide, not only for surface passivation but also as an integral part of a 3- layer AR coating for thermally diffused p(+)n InP solar cells. A phosphorus-rich interfacial oxide, In(PO3)3, is grown at the surface of the p(+) emitter using an etchant based on HNO3, o-H3PO4 and H2O2. This oxide has the unique properties of passivating the surface as well as serving as a fairly efficient antireflective layer yielding a measured record high AM0, 25 C, open-circuit voltage of 890.3 mV on a thermally diffused InP(Cd,S) solar cell. Unlike conventional single layer AR coatings such as ZnS, Sb2O3, SiO or double layer AR coatings such as ZnS/MgF2 deposited by e-beam or resistive evaporation, this oxide preserves the stoichiometry of the InP surface. We show that it is possible to design a three-layer AR coating for a thermally diffused InP solar cell using the In(PO3)3 grown oxide as the first layer and Al2O3, MgF2 or ZnS, MgF2 as the second and third layers respectively, so as to yield an overall theoretical reflectance of less than 2%. Since chemical oxides are readily grown on III-V semiconductor materials, the technique of using the grown oxide layer to both passivate the surface as well as serve as the first of a multilayer AR coating, should work well for essentially all III-V compound-based solar cells.

Moulot, Jacques↗

Programmable quantum emitter formation in silicon

Abstract Silicon-based quantum emitters are candidates for large-scale qubit integration due to their single-photon emission properties and potential for spin-photon interfaces with long spin coherence times. Here, we demonstrate local writing and erasing of selected light-emitting defects using femtosecond laser pulses in combination with hydrogen-based defect activation and passivation at a single center level. By choosing forming gas (N 2 /H 2 ) during thermal annealing of carbon-implanted silicon, we can select the formation of a series of hydrogen and carbon-related quantum emitters, including T and C i centers while passivating the more common G-centers. The C i center is a telecom S-band emitter with promising optical and spin properties that consists of a single interstitial carbon atom in the silicon lattice. Density functional theory calculations show that the C i center brightness is enhanced by several orders of magnitude in the presence of hydrogen. Fs-laser pulses locally affect the passivation or activation of quantum emitters with hydrogen for programmable formation of selected quantum emitters.

36 MATERIALS SCIENCE↗

Rare Earth Garnet Selective Emitter

Thin film Ho-YAG and Er-YAG emitters with a platinum substrate exhibit high spectral emittance in the emission band (epsilon(sub lambda) approx. = 0.75, sup 4)|(sub 15/2) - (sup 4)|(sub 13/2),for Er-YAG and epsilon(sub lambda) approx. = 0.65, (sup 5)|(sub 7) - (sup 5)|(sub 8) for Ho-YAG) at 1500 K. In addition, low out-of-band spectral emittance, epsilon(sub lambda) less than 0.2, suggest these materials would be excellent candidates for high efficiency selective emitters in thermophotovoltaic (TPV) systems operating at moderate temperatures (1200-1500 K). Spectral emittance measurements of the thin films were made (1.2 less than lambda less than 3.0 microns) and compared to the theoretical emittances calculated using measured values of the spectral extinction coefficient. In this paper we present the results for a new class of rare earth ion selective emitters. These emitters are thin sections (less than 1 mm) of yttrium aluminum garnet (YAG) single crystal with a rare earth substitutional impurity. Selective emitters in the near IR are of special interest for thermophotovoltaic (TPV) energy conversion. The most promising solid selective emitters for use in a TPV system are rare earth oxides. Early spectral emittance work on rare earth oxides showed strong emission bands in the infrared (0.9 - 3 microns). However, the emittance outside the emission band was also significant and the efficiency of these emitters was low. Recent improvements in efficiency have been made with emitters fabricated from fine (5 - 10 microns) rare earth oxide fibers similar to the Welsbach mantle used in gas lanterns. However, the rare earth garnet emitters are more rugged than the mantle type emitters. A thin film selective emitter on a low emissivity substrate such as gold, platinum etc., is rugged and easily adapted to a wide variety of thermal sources. The garnet structure and its many subgroups have been successfully used as hosts for rare earth ions, introduced as substitutional impurities, in the development of solid state laser crystals. Doping, dependent on the particular ion and crystal structure, may be as high as 100 at. % (complete substitution of yttrium ion with the rare earth ion). These materials have high melting points, 1940 C for YAG (Yttrium Aluminum Garnet), and low emissivity in the near infrared making them excellent candidates for a thin film selective emitter. As previously stated, the spectral emittance of a rare earth emitter is characterized by one or more well defined emission bands. Outside the emission band the emittance(absorptance) is much lower. Therefore, it is expected that emission outside the band for a thin film selective emitter will be dominated by the emitter substrate. For an efficient emitter (power in the emission band/total emitted power) the substrate must have low emittance, epsilon(sub S). This paper presents normal spectral emittance, epsilon(sub lambda), measurements of holmium(Ho) and erbium (Er) doped YAG thin film selective emitters at (1500 K), and compares those results with the theoretical spectral emittance.

Lowe, Roland A.↗