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At least 433 records · Page 24

Partitioning Quantum Chemistry Simulations with Clifford Circuits

Current quantum computing hardware is restricted by the availability of only few, noisy qubits which limits the investigation of larger, more complex molecules in quantum chemistry calculations on quantum computers in the near term. Here, in this work, we investigate the limits of their classical and near-classical treatment while staying within the framework of quantum circuits and the variational quantum eigensolver. To this end, we consider naive and physically motivated, classically efficient product ansatz for the parametrized wavefunction adapting the separable-pair ansatz form. We combine it with post-treatment to account for interactions between subsystems originating from this ansatz. The classical treatment is given by another quantum circuit that has support between the enforced subsystems and is folded into the Hamiltonian. To avoid an exponential increase in the number of Hamiltonian terms, the entangling operations are constructed from purely Clifford or near-Clifford circuits. While Clifford circuits can be simulated efficiently classically, they are not universal. In order to account for missing expressibility, near-Clifford circuits with only few, selected non-Clifford gates are employed. The exact circuit structure to achieve this objective is molecule-dependent and is constructed using simulated annealing and genetic algorithms. We demonstrate our approach on a set of molecules of interest and investigate the extent of our methodology’s reach.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Vacancy-induced suppression of charge density wave order and its impact on magnetic order in kagome antiferromagnet FeGe

Two-dimensional (2D) kagome lattice metals are interesting because their corner sharing triangle structure enables a wide array of electronic and magnetic phenomena. Recently, post-growth annealing is shown to both suppress charge density wave (CDW) order and establish long-range CDW with the ability to cycle between states repeatedly in the kagome antiferromagnet FeGe. Here we perform transport, neutron scattering, scanning transmission electron microscopy (STEM), and muon spin rotation (μSR) experiments to unveil the microscopic mechanism of the annealing process and its impact on magneto-transport, CDW, and magnetism in FeGe. Annealing at 560 °C creates uniformly distributed Ge vacancies, preventing the formation of Ge-Ge dimers and thus CDW, while 320 °C annealing concentrates vacancies into stoichiometric FeGe regions with long-range CDW. The presence of CDW order greatly affects the anomalous Hall effect, incommensurate magnetic order, and spin-lattice coupling in FeGe, placing FeGe as the only kagome lattice material with tunable CDW and magnetic order.

critical phenomena↗

Structural investigation of three distinct amorphous forms of Ar hydrate

Three amorphous forms of Ar clathrate hydrate (pressure-amorphized, annealed and recovered) were characterized by isotope substitution ( 36 Ar) neutron diffraction and molecular dynamics and their local coordinations analyzed and compared to pure ice.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Growth and structural studies of In/Au(111) alloys and InO x /Au(111) inverse oxide/metal model catalysts

Indium oxide has received attention as an exciting candidate for catalyzing the CO 2 hydrogenation to methanol due to its high selectivity (>80%). Compared to the extent of research on the activity of indium oxide-based powder catalysts, very little is known about the phenomena associated with the formation of surface alloys involving indium or the growth mechanism for indium oxide nanoparticles. In this report, scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS) were employed to elucidate the growth mode, structure, and chemical state of In/Au(111) alloys and InO x /Au(111) inverse model catalysts. Here, our study reveals distinct morphological differences between In/Au(111) and InO x /Au(111), and the InO x structure also depends strongly on the preparation conditions. In/Au surface alloy systems with extremely low coverage (0.02 ML) form islands preferentially on the elbow sites of reconstructed Au(111) herringbone, regardless of hcp and fcc stacking. At higher coverage (0.1 ML), the In islands expand over the herringbone in the <110> direction and create two dimensional domain structures over the entire surfaces. Moreover, this 2D domain structure is disturbed by temperature with high dispersion of indium atoms observed during the annealing process. Oxidation of the In/Au(111) surface alloys with O 2 at 550 K produces InO x /Au(111) systems which contain various sizes of InO x aggregates (from 0.7 to 10 nm). On the other hand, InO x /Au(111) surfaces prepared by vapor deposition of In at 550 K in an O 2 background exhibit highly dispersed and uniformly small InO x particles (~1 nm). Both InO x systems were confirmed to be partially oxidized by XPS.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DS-GL: Advancing Graph Learning via Harnessing the Power of Nature within Dynamic Systems

With the rapid digitization of the world, an increasing number of real-world applications are turning to nonEuclidean data, modeled as graphs. Due to their intrinsic high complexity and irregularity, learning from graph data demands tremendous computational power. Recently, CMOS-compatible Ising machines, i.e., dynamic systems composed of CMOS components, have emerged as a new approach that harnesses the inherent power of natural annealing within dynamic systems to efficiently resolve binary optimization problems and have been adopted for traditional graph computation, such as max-cut. However, when performing complex Graph Learning (GL) tasks, Ising machines face significant hurdles: (i) they are inherently binary and thus ill-suited for real-valued problems; (ii) their expensive all-to-all coupling network that guarantees effective natural annealing poses daunting scalability concerns. To address these challenges, this paper proposes a nature-powered graph learning framework dubbed DS-GL, which is the first effort to transform the process of solving graph learning problems into the natural annealing process within a parameterized dynamic system embodied as a CMOS chip. To tackle the two major hurdles, DS-GL first augments the Ising machine architecture to modify the self-reaction term of its Hamiltonian function from linear to quadratic, effectively serving as an energy regulator. This adjustment maintains the system’s original physical interpretation while enabling it to process continuous, real-valued data. Second, to address the scaling issue, DS-GL further upgrades the real-valued dense Ising machine by decomposing it into a mesh-based multi-PE dynamic system that supports efficient distributed spatial-temporal co-annealing across different PEs through sparse interconnects. By exploiting the inherent sparsity and component structures in real-world graphs, DS-GL is able to map complex graph learning tasks onto the scalable dynamic system while maintaining high accuracy. Evaluations with three diverse GL applications across six real-world datasets, including traffic flow and COVID-19 prediction, show that DS-GL can deliver from 102× to 106× speedups and 500× energy reduction over Graph Neural Networks on GPUs, with 5% - 20% accuracy enhancement.

Song, Ruibing↗

Electronic properties of deep-level defects in proton irradiated AlGaAs-GaAs solar cells

Deep level transient spectroscopy and capacitance voltage techniques as well as analysis of the forward current voltage (I-V) characteristics and SEM-EIC data were carried out for proton irradiated GaAs solar cells over a wide range of proton energies and proton fluences. Defect and recombination parameters such as defect energy levels and density, carrier capture cross sections and lifetimes as well as diffusion lengths in the undoped n-GaAs LPE layers were determined. Good correlation between these defect parameters and solar cell performance parameters was obtained for GaAs solar cells irradiated by 200 and 290 KeV protons. It was found that 200 to 290 KeV protons will produce the most defects and damages to the GaAs solar cell structure used. The influence of the low temperature (200 to 400 C) periodic thermal annealing on the deep level defects and the performance of the 200 KeV proton irradiated cells is discussed.

Li, S. S.↗

NASA space photovoltaic research and technology programs

The NASA programs for increasing conversion efficiency, reduced mass and cost, and extending operating life of photovoltaic converters and arrays and for evaluating advanced solar array concepts are outlined. Research into radiation resistance and annealing, development of thin blankets, high-power low-cost arrays, and lightweight structures for near-Earth and planetary applications are discussed.

Mullin, J. P.↗

13C and 1H NMR (Nuclear Magnetic Resonance) studies of solid polyolefines

The basis of H-1 and C-13 high-resolution NMR investigations of solid polymers is outlined. The C-13 NMR spectra of solid syndiotactic and isotactic polypropene are discussed and their interpretation in terms of conformation and chain-packing effects are reviewed. The effects of decreasing temperature on the C-13 high-resolution spectrum of an annealed sample of isotactic polypropene is described and interpreted in terms of the crystal structure. The question of the proportion of the sample giving rise to C-13 signals is addressed and some results reported. The main cause for observing only part of the total sample is shown to be the H-1 rotating frame spin-lattice relaxation behavior. The H-1 spin-lattice relaxation and spectral characteristics of a number of polyolefin samples are summarized and the role of spin-diffusion discussed.

Cudby, M. E. A.↗

Behavior of ion-implanted junction diodes in 3C SiC

p-n junction diodes have been formed by ion implantation of B or Al in 3C SiC and annealing at 1365 C. The current-voltage characteristics of the Al-implanted structures show little rectification. The B-implanted diodes show rectification, with ideality factors of 2.2 and higher, breakdown voltages between 5 and 10 V, and a series resistance of the order of 20 kohm. The current-voltage characteristics were measured between room temperature and 270 C. The extracted ideality factors increase with temperature.

Avila, R. E.↗

Electron microscopy of a Gd-Ba-Cu-O superconductor

An electron microscopy study has been carried out to characterize the microstructure of a sintered Gd-Ba-Cu-O superconductor alloy. The GdBa2Cu3O(7-x) phase in the oxygen annealed sample is orthorhombic, while in the vacuum annealed sample it is tetragonal. It is shown that the details of the fine structure in the 001-line zone axis convergent beam patterns can be used to distinguish between the orthorhombic form and the tetragonal form. In addition to this matrix phase, an amorphous phase is frequently observed at the triple grain junctions. Gd-rich inclusions have been observed inside the matrix phase.

Ramesh, R.↗

Graphene Oxide Reduces the Hydrolytic Degradation in Polyamide-11

Graphene oxide (GO) was incorporated into polyamide-11 (PA11) via in-situ polymerization. The GO-PA11 nano-composite had elevated resistance to hydrolytic degradation. At a loading of 1 mg/g, GO to PA11, the accelerated aging equilibrium molecular weight of GO-PA11 was higher (33 and 34 kg/mol at 100 and 120 °C, respectively) compared to neat PA11 (23 and 24 kg/mol at 100 and 120 °C, respectively). Neat PA11 had hydrolysis rate constants (kH) of 2.8 and 12 ( × 10(exp -2) day(exp -1)) when aged at 100 and 120 °C, respectively, and re-polymerization rate constants (kP) of 5.0 and 23 ( × 10(exp -5) day(exp -1)), respectively. The higher equilibrium molecular weight for GO-PA11 loaded at 1 mg/g was the result of a decreased kH, 1.8 and 4.5 ( × 10(exp -2) day(exp -1)), and an increased kP, 10 and 17 ( × 10(exp -5) day(exp -1)) compared with neat PA11 at 100 and 120 °C, respectively. The decreased rate of degradation and resulting 40% increased equilibrium molecular weight of GO-PA11 was attributed to the highly asymmetric planar GO nano-sheets that inhibited the molecular mobility of water and the polymer chain. The crystallinity of the polymer matrix was similarly affected by a reduction in chain mobility during annealing due to the GO nanoparticles' chemistry and highly asymmetric nano-planar sheet structure.

Samuel J A Hocker↗

An Investigation into the Grain Structure of Impact Ice

To design effective anti-icing and de-icing technology for aircraft, scientists and engineers must obtain a fundamental understanding of the microstructural characteristics of impact ice. This study investigates the effects of icing parameters, such as airspeed and liquid water content (LWC), on impact ice microstructure near the interface to a metal substrate. Ice samples were accreted in the NASA Glenn Icing Research Tunnel and tested in the NASA Revolutionary Icing Materials Evaluation Laboratory. A microtome was used to shave down the ice to a thickness of < 1 mm for examination under a microscope. Samples were imaged at multiple magnifications using bright field imaging. The average grain size was determined for each sample in accordance with ASTM standard methods, and relationships between airspeed, LWC, and grain size were identified. It was observed that the average grain area in a given cross-section was linearly related to the distance of the cross-section from the metal surface. Finally, the effects of annealing and sublimation on the microstructure were also explored. Results show significant variation in the grain structure, suggesting a means by which icing condition influences adhesion strength.

grain↗

4D evolution of Cr 23 C 6 precipitates in neutron-irradiated and annealed HT-UPS steel observed via synchrotron micro-computed tomography

High-temperature-ultrafine precipitate strengthened (HT-UPS) steel is a potential structural material for advanced nuclear reactors; however, its irradiation response is not well understood. This research provides insight into irradiation-induced effects, such as precipitate evolution mechanisms and four-dimensional morphological evolution, in HT-UPS steel using synchrotron micro-computed tomography. Identical specimens were characterized pre-irradiation and post-irradiation following neutron exposure up to 0.3 displacements per atom at 600 °C. Irradiation effects were also differentiated from the annealing response of precipitates. Following neutron irradiation, the average Cr 23 C 6 precipitate size reduced, affected by the synergy of nucleation and growth, ballistic dissolution, and inverse coarsening, which was observed at fluences an order of magnitude lower than previously observed. Annealing at 600 °C for 32 h increased the average Cr 23 C 6 precipitate size and decreased the phase fraction, attributed to precipitate coarsening. The precipitate morphology evolution and resultant mechanisms can be utilized to parameterize and validate microstructural models simulating radiation damage or annealing.

36 MATERIALS SCIENCE↗

Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures

High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen-passivated HE InP cell results will also be presented.

Chatterjee, B.↗

A technique for optimizing grid blocks

A new technique for automatically combining grid blocks of a given block-structured grid into logically-rectangular clusters which are 'optimal' is presented. This technique uses the simulated annealing optimization method to reorganize the blocks into an optimum configuration, that is, one which minimizes a user-defined objective function such as the number of clusters or the differential in the sizes of all the clusters. The clusters which result from applying the technique to two different two-dimensional configurations are presented for a variety of objective function definitions. In all cases, the automatically-generated clusters are significantly better than the original clusters. While this new technique can be applied to block-structured grids generated from any source, it is particularly useful for operating on block-structured grids containing many blocks, such as those produced by the emerging automatic block-structured grid generators.

Dannenhoffer, John F., III↗

Controlled One‐pot Synthesis of Nickel Single Atoms Embedded in Carbon Nanotube and Graphene Supports with High Loading

Abstract Single‐atom catalysts (SACs) have attracted much attentions due to the advantages of high catalysis efficiency and selectivity. However, the controllable and efficient synthesis of SACs remains a significant challenge. Herein, we report a controlled one‐pot synthesis of nickel single atoms embedded on nitrogen‐doped carbon nanotubes (NiSA−N−CNT) and nitrogen‐doped graphene (NiSA−N−G). The formation of NiSA−N−CNT is due to the solid‐to‐solid rolling up mechanism during the high temperature pyrolysis at 800 °C from the stacked and layered Ni‐doped g‐C 3 N 4 , g‐C 3 N 4 −Ni structure to a tubular CNT structure. Addition of citric acid introduces an amorphous carbon source on the layered g‐C 3 N 4 −Ni and after annealing at the same temperature of 800 °C, instead of formation of NiSA−N−CNT, Ni single atoms embedded in planar graphene type supports, NiSA−N−G were obtained. The density functional theory (DFT) calculation indicates the introduction of amorphous carbon source substantially reduces the structure fluctuation or curvature of layered g‐C 3 N 4 ‐Ni intermediate products, thus interrupting the solid‐to‐solid rolling process and leading to the formation of planar graphene type supports for Ni single atoms. The as‐synthesized NiSA−N−G with Ni atomic loading of ∼6 wt% catalysts shows a better activity and stability for the CO 2 reduction reaction (CO 2 RR) than NiSA−N−CNT with Ni atomic loading of ∼15 wt% due to the open and exposed Ni single atom active sites in NiSA−N−G. This study demonstrates for the first time the feasibility in the control of the microstructure of carbon supports in the synthesis of SACs.

Zhao, Shiyong↗

Quantitative surface studies of moiré intercalated Pb structures under Gr/SiC

Quantitative growth studies using surface diffraction and scanning tunneling microscopy are carried out to determine the intercalation conditions for Pb under Gr/SiC, with initial phase a mixture of buffer-layer and single-layer graphene. Intercalation is a kinetically complex, multistage process with intercalated Pb moving between different subsurface locations with annealing, eventually to the location of higher stability. The transfer is determined by monitoring the difference of a given spot intensity from its clean value, as a function of growth parameters. In addition, a broad, low-intensity (10×10) gr moiré phase is observed exclusively originating from intercalated Pb. Well-defined growth conditions are identified for the moiré spot to be observed reversibly. The (10×10) gr phase follows changes of the Pb(10) spot during growth and annealing experiments, instead of changes of the other Gr/SiC spots indicating preferred nucleation of Pb islands on the (10×10) gr domains. These structural results are discussed in connection to different models proposed for the (10×10) gr supercell and the subsurface Pb coverage. In conclusion, mass transport of subsurface Pb is unusually high, possibly because of the very high compression of the intercalated Pb, when compared to metallic Pb(111).

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗