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418 records · Page 24

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DOE OSTI2025

Experimental determination of energy-level structures of diamond silicon-vacancy centers in off-axis magnetic fields

Here, we report the development of an experimental approach to efficiently determine the energy level structure of an individual silicon vacancy (SiV) center in a magnetic field along an arbitrary direction. This approach uses two coupling rates (one each for the ground and the excited states) to characterize the combined effects of static strain and dynamic Jahn-Teller coupling and exploits the fact that orbital Zeeman effects vanish when the magnetic field is normal to the SiV axis. With an analytical expression for the energy level structure of the SiV under a transverse magnetic field, the two coupling rates can be directly derived from two measurements: one on the frequency separation between two spin-conserved transitions and the other on the coherent population trapping resonance of the SiV ground spin states. A detailed comparison between the numerical calculation and the experimental result on the dependence of the spin-conserved splitting on both the amplitude and direction of the magnetic field further reveals unequal orbital magnetic coupling for the ground and excited states, indicating that unequal orbital quenching factors are needed for an accurate description of the SiV energy level structure in a magnetic field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2024

Direct-bonded diamond membranes for heterogeneous quantum and electronic technologies

Diamond has superlative material properties for a broad range of quantum and electronic technologies. However, heteroepitaxial growth of single crystal diamond remains limited, impeding integration and evolution of diamond-based technologies. Here, we directly bond single-crystal diamond membranes to a wide variety of materials including silicon, fused silica, sapphire, thermal oxide, and lithium niobate. Our bonding process combines customized membrane synthesis, transfer, and dry surface functionalization, allowing for minimal contamination while providing pathways for near unity yield and scalability. We generate bonded crystalline membranes with thickness as low as 10 nm, sub-nm interfacial regions, and nanometer-scale thickness variability over 200 by 200 μm 2 areas. We measure spin coherence times T 2 for nitrogen vacancy centers in 150 nm-thick bonded membranes of up to 623 ± 21 μs, suitable for advanced quantum applications. We demonstrate multiple methods for integrating high quality factor nanophotonic cavities with the diamond heterostructures, highlighting the platform versatility in quantum photonic applications. Furthermore, we show that our ultra-thin diamond membranes are compatible with total internal reflection fluorescence (TIRF) microscopy, which enables interfacing coherent diamond quantum sensors with living cells while rejecting unwanted background luminescence. The processes demonstrated herein provide a full toolkit to synthesize heterogeneous diamond-based hybrid systems for quantum and electronic technologies.

color center↗

DOE OSTI2021

Theoretical investigation of charge transfer between the NV – center in diamond and substitutional N and P

The nitrogen-vacancy (NV) lattice defect in diamond, consisting of an N substitutional atom and an adjacent C vacancy, is commonly observed in two charge states, negative (NV – ) and neutral (NV 0 ). The NV – defect exhibits spin state-dependent fluorescence and is, therefore, amenable to optical methods for spin-state readout, while the NV 0 is not. Hence, the NV – defect is much more useful for quantum sensing and quantum information processing. However, only NV 0 electroluminescence has been observed, even from centers showing NV – in photoluminescence. In the present work, we use first-principles electronic structure calculations to determine adiabatic charge transition levels for the conversion of NV – to NV 0 in the presence of substitutional N or P impurities, which provide the charge of the NV center. Here, we find that the adiabatic charge transition levels in the presence of such impurities lie at energies close to or lower than the zero-phonon line of the NV – center and that these energies only decrease as the concentration of N donors increases. This work, therefore, elucidates the absence of observed electroluminescence from the NV – and proposes a path toward observation of the phenomenon.

36 MATERIALS SCIENCE↗

DOE OSTI2026

Spontaneously Broken Noninvertible Symmetries in Transverse-Field Ising Qudit Chains

Recent developments have revealed that symmetries need not form a group, but instead can be noninvertible. Here we use analytical arguments and numerical evidence to illuminate how spontaneous symmetry breaking of a noninvertible symmetry is similar yet distinct from ordinary, invertible, symmetry breaking. We consider one-dimensional chains of group-valued qudits, whose local Hilbert space is spanned by elements of a finite group 𝐺 (reducing to ordinary qubits when 𝐺=ℤ 2 ). We construct Ising-type transverse-field Hamiltonians with Rep⁡(𝐺) symmetry whose generators multiply according to the tensor product of irreducible representations (irreps) of the group 𝐺 . For non-Abelian 𝐺 , the symmetry is noninvertible. In the symmetry broken phase there is one ground state per irrep on a closed chain. The symmetry breaking can be detected by local order parameters but, unlike the invertible case, different ground states have distinct entanglement patterns. We show that for each irrep of dimension greater than one the corresponding ground state exhibits string order, entanglement spectrum degeneracies, and has gapless edge modes on an open chain—features usually associated with symmetry-protected topological order. Consequently, domain wall excitations behave as one-dimensional non-Abelian anyons with nontrivial internal Hilbert spaces and fusion rules. Our Letter identifies properties of noninvertible symmetry breaking that existing quantum hardware can probe.

1-dimensional spin chains↗