Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “silicone materials”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 433 records · Page 24
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

FCC feasibility studies: Impact of tracker- and calorimeter-detector performance on jet flavor identification and Higgs physics analyses

The ambitious physics program planned for the Future Circular Collider electron-positron phase imposes stringent constraints on detector performance. This study systematically investigates how different detector configurations impact jet flavor identification and their effects on high-profile physics analyses. Using Higgs boson coupling measurements and searches for invisible Higgs decays as benchmarks, we evaluate the sensitivity of these analyses to variations in tracker and calorimeter detector properties. We examine modifications to single-point resolution, material budget, silicon layer placement, and particle identification capabilities, quantifying their effects on flavor-tagging performance. Additionally, we present the first comprehensive study of Higgs-to-invisible decay detection using full detector simulation, providing insights for optimizing detector designs at lepton colliders.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2024

Future of plasma etching for microelectronics: Challenges and opportunities

Plasma etching is an essential semiconductor manufacturing technology required to enable the current microelectronics industry. Along with lithographic patterning, thin-film formation methods, and others, plasma etching has dynamically evolved to meet the exponentially growing demands of the microelectronics industry that enables modern society. At this time, plasma etching faces a period of unprecedented changes owing to numerous factors, including aggressive transition to three-dimensional (3D) device architectures, process precision approaching atomic-scale critical dimensions, introduction of new materials, fundamental silicon device limits, and parallel evolution of post-CMOS approaches. The vast growth of the microelectronics industry has emphasized its role in addressing major societal challenges, including questions on the sustainability of the associated energy use, semiconductor manufacturing related emissions of greenhouse gases, and others. The goal of this article is to help both define the challenges for plasma etching and point out effective plasma etching technology options that may play essential roles in defining microelectronics manufacturing in the future. The challenges are accompanied by significant new opportunities, including integrating experiments with various computational approaches such as machine learning/artificial intelligence and progress in computational approaches, including the realization of digital twins of physical etch chambers through hybrid/coupled models. These prospects can enable innovative solutions to problems that were not available during the past 50 years of plasma etch development in the microelectronics industry. To elaborate on these perspectives, the present article brings together the views of various experts on the different topics that will shape plasma etching for microelectronics manufacturing of the future.

Engineering↗
DOE OSTI2020

Early Career: Mesoscale Fragments of Crystalline Silicon by Chemical Synthesis (Final Technical Report)

Silicon has transformed the modern era, with applications in computing, solar cells, energy storage, and beyond. The traditional approach to making silicon is a high-temperature “top-down” process that affords only the most stable form of silicon, leaving hidden vast swathes of structure-function space. The goal of this program was to establish new approaches to making silicon-based materials from the bottom-up, allowing structural precision from the atomic level up to the bulk, and to understand how structure influences function. Key results included the development of the cyclosilane building blocks and low-temperature methods for their polymerization, as well as new tools for spectroscopic characterization. In addition to revealing new materials chemistry insights, in the five-year period covered by this award, this work resulted in 11 publications and three graduate student theses.

36 MATERIALS SCIENCE↗
DOE OSTI2024

One-Step Spark Plasma Erosion Processing of Carbon-Coated Sn-Si Nanoparticles for Lithium-Ion Battery Anodes

High density portable energy storage is desirable owing to the energy requirements of portable electronics and electric vehicles. The Li-ion battery’s high energy density could be even further improved through the utilization of alternative materials (instead of carbon) for the anode, such as Sn or Si. Nonetheless, the large volume expansion upon lithiation, up to ~300% for Li 22 Si 5 , causes pulverization and rapid capacity degradation during cycling. Sn also forms a Li 22 Sn 5 compound with the equivalent stoichiometric Li capacity but with enhanced ductility. Nano-sized Si and Sn have demonstrated distinctive nanoscale properties, facilitating the retention of higher capacities, particularly when coated with carbon, which improves mechanical stability. To date, the methods of synthesizing coated Si, Sn, or Si-Sn alloyed nanoparticles are complicated, costly, and not readily scalable to meet the demands of cost-effective manufacturing. Spark plasma erosion in a hydrocarbon dielectric has been explored as a one-step process to produce Sn-Si alloy nanoparticles coated with a thin carbon film, offering a scalable and cost-effective processing route. The resulting Sn-Si particles exhibited a bi-modal size distribution at ~5 nm and ~500 nm and were carbon-coated, as intended, from the hydrocarbon dielectric breakdown. The spark-eroded nanoparticles were thoroughly characterized using TEM/EDS, XPS, AES, SSNMR, and TGA, and their improved electrochemical performance was assessed through half-cell experiments.

25 ENERGY STORAGE↗
NASA NTRS1971

Metallization failures

Metallization-related failure mechanisms were shown to be a major cause of integrated circuit failures under accelerated stress conditions, as well as in actual use under field operation. The integrated circuit industry is aware of the problem and is attempting to solve it in one of two ways: (1) better understanding of the aluminum system, which is the most widely used metallization material for silicon integrated circuits both as a single level and multilevel metallization, or (2) evaluating alternative metal systems. Aluminum metallization offers many advantages, but also has limitations particularly at elevated temperatures and high current densities. As an alternative, multilayer systems of the general form, silicon device-metal-inorganic insulator-metal, are being considered to produce large scale integrated arrays. The merits and restrictions of metallization systems in current usage and systems under development are defined.

Beatty, R.↗
NASA NTRS1975

Development of advanced fuel cell system, phase 3

A multiple task research and development program was performed to improve the weight, life, and performance characteristics of hydrogen-oxygen alkaline fuel cells for advanced power systems. Gradual wetting of the anode structure and subsequent long-term performance loss was determined to be caused by deposition of a silicon-containing material on the anode. This deposit was attributed to degradation of the asbestos matrix, and attention was therefore placed on development of a substitute matrix of potassium titanate. An 80 percent gold 20 percent platinum catalyst cathode was developed which has the same performance and stability as the standard 90 percent gold - 10 percent platinum cathode but at half the loading. A hybrid polysulfone/epoxy-glass fiber frame was developed which combines the resistance to the cell environment of pure polysulfone with the fabricating ease of epoxy-glass fiber laminate. These cell components were evaluated in various configurations of full-size cells. The ways in which the baseline engineering model system would be modified to accommodate the requirements of the space tug application are identified.

Handley, L. M.↗
NASA NTRS1975

Optical contamination evidence from Skylab and Gemini flights

Final results from a part of the T027 experiment performed on the first Skylab mission are presented. The sample array system containing 248 optical surfaces and exposed outside the orbital workshop did not collect any significant contaminants. Unfortunate performance compromises and the relative cleanliness of the assembly on the antisolar side placed the amount of available surface contaminants at or below the limiting sensitivity of the ground measuring instruments. Significant contamination was seen near the extravehicular hatch quadrant on the solar side of the orbiting assembly, and some results from returned samples are presented. Optical windows and mirrors exposed on the Gemini 12 mission showed degradation up to 35% in the UV wavelength region and solar absorptance increases up to 1.8 times the clean values. An expression for the attenuation coefficient vs wavelength is presented. The contaminant, a silicone base material, varied in thickness from 22 nm to 88 nm. The postflight scattered luminance of a contaminated Gemini 12 left-hand spacecraft hatch window was used to obtain threshold stellar visibility curves as a function of scattered and incident sunlight angles.

Muscari, J. A.↗
NASA NTRS1977

Epitaxial solar-cell fabrication, phase 2

Dichlorosilane (SiH2Cl2) was used as the silicon source material in all of the epitaxial growths. Both n/p/p(+) and p/n/n(+) structures were studied. Correlations were made between the measured profiles and the solar cell parameters, especially cell open-circuit voltage. It was found that in order to obtain consistently high open-circuit voltage, the epitaxial techniques used to grow the surface layer must be altered to obtain very abrupt doping profiles in the vicinity of the junction. With these techniques, it was possible to grow reproducibly both p/n/n(+) and n/p/p(+) solar cell structures having open-circuit voltages in the 610- to 630-mV range, with fill-factors in excess of 0.80 and AM-1 efficiencies of about 13%. Combinations and comparisons of epitaxial and diffused surface layers were also made. Using such surface layers, we found that the blue response of epitaxial cells could be improved, resulting in AM-1 short-circuit current densities of about 30 mA/cm sq. The best cells fabricated in this manner had AM-1 efficiency of 14.1%.

Daiello, R. V.↗
NASA NTRS1979

LSA Large Area Silicon Sheet Task Continuous Czochralski Process Development

A commercial Czochralski crystal growing furnace was converted to a continuous growth facility by installation of a small, in-situ premelter with attendant silicon storage and transport mechanisms. Using a vertical, cylindrical graphite heater containing a small fused quartz test tube linear from which the molten silicon flowed out the bottom, approximately 83 cm of nominal 5 cm diamter crystal was grown with continuous melt addition furnished by the test tube premelter. High perfection crystal was not obtained, however, due primarily to particulate contamination of the melt. A major contributor to the particulate problem was severe silicon oxide buildup on the premelter which would ultimately drop into the primary melt. Elimination of this oxide buildup will require extensive study and experimentation and the ultimate success of continuous Czochralski depends on a successful solution to this problem. Economically, the continuous Czochralski meets near-term cost goals for silicon sheet material.

Rea, S. N.↗
NASA NTRS1979

Silicon Solar Cell Process Development, Fabrication and Analysis

Solar cells were constructed from polycrystalline silicon sheet material (10 cm x 10 cm). These cells were made using conventional aerospace methods and serve as the so-called baseline cell for analysis and comparison with cells to be made from similar material, but using optimized processing techniques. Before and during the processing of the baseline cells in a cleaned diffusion tube, control cells were built using the baseline method. All cells were measured on a solar simulator at air mass zero and 28 C. Average efficiency for the baseline cells was 9.5%. Efficiency was found to vary with location in the sheet. Center regions had higher efficiencies whereas corner and edge regions had lower efficiencies. In general, the efficiency falls off with distance from the center of the sheet.

Minahan, J. A.↗
NASA NTRS1979

Vacuum Die Casting of Silicon Sheet for Photovoltaic Applications

The development of a vacuum die-casting process for producing silicon sheet suitable for photovoltaic cells with a terrestrial efficiency greater than 12 percent and having the potential to be scaled for large quantity production is considered. The initial approach includes: (1) obtaining mechanical design parameters by using boron nitride, which has been shown to non-wetting to silicon; (2) optimizing silicon nitride material composition and coatings by sessile drop experiments; (3) testing effectiveness of fluoride salt interfacial media with a graphite mold; and (4) testing the effect of surface finish using both boron nitride and graphite. When the material and mechanical boundary conditions are established, a finalized version of the prototype assembly will be constructed and the casting variables determined.

Source record↗
NASA NTRS1980

Study program for encapsulation materials interface for low cost silicon solar array

An atmospheric corrosion model was developed and verified by five months of corrosion rate and climatology data acquired at the Mead, Nebraska LSA test site. Atmospheric corrosion rate monitors (ACM) show that moisture condensation probability and ionic conduction at the corroding surface or interface are controlling factors in corrosion rate. Protection of the corroding surface by encapsulant was shown by the ACM recordings to be maintained, independent of climatology, over the five months outdoor exposure period. The macroscopic corrosion processes which occur at Mead are shown to be reproduced in the climatology simulator. Controlled experiments with identical moisture and temperature aging cycles show that UV radiation causes corrosion while UV shielding inhibits LSA corrosion.

Kaelble, D. H.↗
NASA NTRS1981

A Module Experimental Process System Development Unit (MEPSDU)

The technical readiness of a cost effective process sequence that has the potential for the production of flat plate photovoltaic modules which met the price goal in 1986 of $.70 or less per Watt peak was demonstrated. The proposed process sequence was reviewed and laboratory verification experiments were conducted. The preliminary process includes the following features: semicrystalline silicon (10 cm by 10 cm) as the silicon input material; spray on dopant diffusion source; Al paste BSF formation; spray on AR coating; electroless Ni plate solder dip metallization; laser scribe edges; K & S tabbing and stringing machine; and laminated EVA modules.

Source record↗
NASA NTRS1980

Surface flaw detection in structural ceramics by scanning photoacoustic spectroscopy

Laser-scanned photoacoustic spectroscopy has been used to detect tightly closed surface cracks in three structural ceramic materials: sintered silicon nitride, reaction-bonded silicon nitride, and sintered silicon carbide. It is found that the amplitude of the photoacoustic signal from the flaws is greater for the silicon nitrides than for silicon carbide, which is attributed to the lower thermal diffusivity of silicon nitride as well as differences in the grain size distribution and chemical composition. Signal amplitude, reproducibility, and signal-to-noise ratio are acceptable for effective flaw detection

Khandelwal, P. K.↗