SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Hot wire sensor combined with voltage-comparator circuit monitors liquid level in cryogenic-fluid storage tanks. Sensor circuit adaptable to different liquids and sensors. Constant-current source drives current through sensing probe and fixed resistor. Voltage comparator circuits interpret voltage drops to tell whether probe is immersed in liquid and is current in probe.
Simple modification of oscilloscope probe allows easy detection of floating inputs or tristate outputs in digital-IC's. Oscilloscope probe easily modified with 1/4 W resistor and switch for detecting floating inputs in CMOS logic circuits.
A bio-medical flow sensor including a packageable unit of a bottle, tubing and hypodermic needle which can be pre-sterilized and is disposable. The tubing has spaced apart tubular metal segments. The temperature of the metal segments and fluid flow therein is sensed by thermistors and at a downstream location heat is input by a resistor to the metal segment by a control electronics. The fluids flow and the electrical power required for the resisto to maintain a constant temperature differential between the tubular metal segments is a measurable function of fluid flow through the tubing. The differential temperature measurement is made in a control electronics and also can be used to control a flow control valve or pump on the tubing to maintain a constant flow in the tubing and to shut off the tubing when air is present in the tubing.
A flashlamp drive circuit is described which uses an unsaturated transistor as a current mode switch to periodically subject a partially ionized gaseous laser excitation flashlamp to a stable, rectangular pulse of current from an incomplete discharge of an energy storage capacitor. A monostable multivibrator sets the pulse interval, initiating the pulse in response to a flash command by providing a reference voltage to a non-inverting terminal of a base drive amplifier; a tap on an emitter resistor provides a feedback signal sensitive to the current amplitude to an inverting terminal of amplifier, thereby controlling the pulse amplitude. The circuit drives the flashlamp to provide a squarewave current flashlamp discharge.
An automatic level control circuit for an operational amplifier for minimizing spikes or instantaneous gain of the amplifier at a low period wherein no signal is received on the input is provided. The apparatus includes a multibranch circuit which is connected between an output terminal and a feedback terminal. A pair of zener diodes are connected back to back in series with a capacitor provided in one of the branches. A pair of voltage dividing resistors are connected in another of the branches and a second capacitor is provided in the remaining branch of controlling the high frequency oscillations of the operational amplifier.
Upset thresholds for bulk CMOS and CMOS/SOS RAMS were deduced after bombardment of the devices with 140 MeV Kr, 160 MeV Ar, and 33 MeV O beams in a cyclotron. The trials were performed to test prototype devices intended for space applications, to relate feature size to the critical upset charge, and to check the validity of computer simulation models. The tests were run on 4 and 1 K memory cells with 6 transistors, in either hardened or unhardened configurations. The upset cross sections were calculated to determine the critical charge for upset from the soft errors observed in the irradiated cells. Computer simulations of the critical charge were found to deviate from the experimentally observed variation of the critical charge as the square of the feature size. Modeled values of series resistors decoupling the inverter pairs of memory cells showed that above some minimum resistance value a small increase in resistance produces a large increase in the critical charge, which the experimental data showed to be of questionable validity unless the value is made dependent on the maximum allowed read-write time.
A technique is developed for directly integrating infrared photoconductive PbS detector material with MOS transistors. A layer of chromium, instead of aluminum, is deposited followed by a gold deposition in order to ensure device survival during the chemical deposition of the PbS. Among other devices, a structure was fabricated and evaluated in which the PbS was directly coupled to the gate of a PMOS. The external bias, load, and source resistors were connected and the circuit was operated as a source-follower amplifier. Radiometric evaluations were performed on a variety of different MOSFETs of different geometry. In addition, various detector elements were simultaneously fabricated to demonstrate small element capability, and it was shown that elements of 25 x 25 microns could easily be fabricated. Results of room temperature evaluations using a filtered 700 K black body source yielded a detectivity at peak wavelength of 10 to the 11th cm (root Hz)/W at 100 Hz chopping frequency.
Diode circuit linearizes output of pulsating dc tranducers. Circuit consists of diode in series with sensing resistor placed across secondary winding of transducer transformer.
An ultrasonic transducer that produces an output that is a symmetrical function comprises a piezoelectric crystal with several concentric ring electrodes on one side of the crystal. A resistor network applies different amplitudes of an ac source to each of the several electrodes. A plot of the different amplitudes from the outermost electrode to the innermost electrode is the first half of a Gaussian function. Consequently, the output of the crystal from the side opposite the electrodes has a Gaussian profile.
A phase detector for the three phase power factor controller (PFC) is described. The phase detector for each phase includes an operational amplifier which senses the current phase angle for that phase by sensing the voltage across the phase thyristor. Common mode rejection is achieved by providing positive feedback between the input and output of the voltage sensing operational amplifier. this feedback preferably comprises a resistor connected between the output and input of the operational amplifier. The novelty of the invention resides in providing positive feedback such that switching of the operational amplifier is synchronized with switching of the voltage across the thyristor. The invention provides a solution to problems associated with high common mode voltage and enables use of lower cost components than would be required by other approaches.
Seven gallium doped germanium (Ge:Ga) photoconductive infrared detectors were fabricated and mounted in integrating cavities. In addition, a cold preamplifier package consisting of J230 junction field effect transistors (JFETs) was produced. Tests of the system under low photon background conditions indicated that sensitivity was limited by the Johnson noise of the load resistor. The detectors were mounted in the Ames cooled grating spectrometer, and flown on the Kuiper Airborne Observatory. Good quality astronomical data were obtained during the flight of 7 July 1983.
The advantages of silicon piezoresistive strain sensing technology are being used to achieve the objectives of state of the art pressure sensors for SSME applications. The integration of multiple functions on a single chip is the key attribute being exploited. Progress is reported in transducer packaging and materials; silicon resistor characterization at cryogenic temperatures; chip mounting; and frequency response optimization.
In the case of modern infrared focal planes, one of the major problems is related to the noise contribution of the cooled, impedance-matching device used as the preamplifier stage in the detector electronics system. An ideal preamp device should have the low-noise advantages of a buried-channel device and operate isothermally with the low-temperature detector array. The Ge JFET might provide this ideal device. A testing program with Ge JFETs is discussed. It is concluded that germanium JFETs offer an attractive alternative for cryogenic preamplifier designs. They operate well with high transconductance and low noise at LHe temperatures. It is believed that these devices point the way for the development of large, integrated-array, long wavelength, infrared focal planes which incorporate germanium detectors, germanium load resistors, and germanium preamplifiers within the same monolithic structure.
Load circuit for testing dc power supplies adjusted without momentary interruptions typical of rheostat loads. Load current passes through power transistor and fixed resistor instead of wire-wound rheostat. In new circuit potentiometer used to adjust bias of power transistor and thereby adjust load. Components are standard, commercially available parts, mounted on transistor heat sink, forming compact package.
New methods to advance the state-of-the-art of pressure sensors for the Space Shuttle Main Engine were demonstrated. The results of the feasibility and breadboard demonstration phase and the current status of the research development prototype follow-on phase are presented. A technology breakthrough utilizing silicon piezoresistive technology was achieved in the first phase. A transducer design concept for the SSME application utilizes packaging materials with similar thermal coefficients of expansion and maintains the transducer seals primarily in compression. The silicon chip design will provide dual sensing outputs with laser trimmable integrated compensating electronics. The silicon resistor ion implant dose was customized for the SSME temperature requirement. A basic acoustic modeling software program was developed to evaluate the frequency response characteristics for the package design.
During the individual cell short-down procedures often used for storing or reconditioning nickel-cadmium (Ni-Cd) batteries, it is possible for significant reversal of the lowest capacity cells to occur. The reversal is caused by the finite resistance of the common current-carrying leads in the resistive network that is generally used during short-down. A model is developed to evaluate the extent of such a reversal in any specific battery, and the model is verified by means of data from the short-down of a f-cell, 3.5-Ah battery. Computer simulations of short-down on a variety of battery configurations indicate the desirability of controlling capacity imbalances arising from cell configuration and battery management, limiting variability in the short-down resistors, minimizing lead resistances, and optimizing lead configurations.
Simple positive-feedback circuit varies bias voltage as necessary. Ideal detector biased with constant voltage, detector current proportional to photon flux plus constant offset. Detector connected between inverting input and ground, and feedback from operational amplifier through feedback resistor Rf make voltage at inverting input equal to noninverting input. Bias voltage held constant. Principle applied to linearizing mercury cadmium telluride infrared detectors in Fourier-transform spectrometers and other spectral and imaging instruments.
Gripper handles electronic components without damaging them. Driven by dc motor, movable jaw gently clamps electronic component. Grips such electronic components as resistors, capacitors, and transistors without damaging them and holds them during soldering or other processing.