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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 433 records · Page 24
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Optimizing 2D passivation for enhancing performance of fully air-processed carbon electrode-based perovskite solar cells

Air-processed carbon-based perovskite solar cells (C-PSCs) offer scalable and cost-effective photovoltaic manufacturing but face efficiency loss compared to metal-contact perovskite solar cells. Surface passivation of three-dimensional (3D) perovskites with two-dimensional (2D) perovskite layers has emerged as a promising strategy to enhance device performance. However, the mechanisms by which 2D perovskites more effectively improve C-PSC efficiency and stability remain underexplored. This study investigates the efficacy of 2D/3D heterostructures using n-hexylammonium bromide (C6Br), phenethylammonium iodide (PEAI), and n-octylammonium iodide (OAI) as surface passivators for C-PSCs. C-PSCs treated with C 6 Br achieved a champion power conversion efficiency (PCE) of 21.0%. This enhancement is attributed to superior defect passivation, improved charge extraction, and suppressed non-radiative recombination. Transient ion-drift characterization demonstrates that C 6 Br and OAI reduce ionic conductivity by 2–3 orders of magnitude, correlating with enhanced operational stability under continuous illumination. Our findings highlight the role of short-chain bromide cations (C 6 Br) in optimizing halide-mediated defect healing and interfacial band alignment, positioning 2D-passivated C-PSCs as viable competitors to conventional metal-contact perovskite solar cells.

14 SOLAR ENERGY↗
NASA NTRS1981

Annealing and anomalous high-energy electron irradiation effects in low-cost silicon N+P solar cells

Silicon solar cells of N(+)P type were subjected to 1 MeV electron irradiation (up to 10 to the 16th electrons/sq cm) and then annealed at 450 C for 20 min or annealed with no electron irradiation. Electron irradiation resulted in a degradation of longer wavelength cell response, but produced a marked enhancement of response at shorter wavelengths with a peak change of 40% at 0.44 microns. Subsequent thermal anneal at 450 C reduced the long-wavelength degradation, but enhancement at shorter wavelengths persisted. Excitation at the shorter wavelengths was in the N(+)-diffused layer and in the junction region of the cell. Anneal of unirradiated cells produced shorter-wavelength enhancement with a similar peaking at 0.44 microns, but with a relative change of only 20%. More enhancement was produced in the longer wavelength region (up to 0.8 microns). These effects in the different cell regions are explained by a decrease in the interstitial oxygen-impurity complexes (deep recombination levels) and the formation of substantial oxygen-silicon vacancy centers (donors).

Garlick, G. F. J.↗
DOE OSTI2020

Effects of Surface Terminations of 2D Bi 2 WO 6 on Photocatalytic Hydrogen Evolution from Water Splitting

Two-dimensional (2D)-structured photocatalysts with atomically thin layers not only have the potential to enhance hydrogen generation efficiency but also allow more direct investigations of the effects of surface terminations on photocatalytic activity. In this work, taking 2D Bi 2 WO 6 as a model, we found that the configuration of bilayer Bi 2 O 2 sandwiched by alternating WO 4 layers enabled the thermodynamic driving potential for photocatalytic hydrogen evolution. Without Pt deposition, the H 2 generation efficiency can reach to 56.9 μmol/g/h by 2D Bi 2 WO 6 as compared with no activity of Bi 2 WO 6 nanocrystals under simulated solar light. This configuration is easily functionalized by adsorption of Cl – /Br – to form Bi–Cl/Bi–Br bonds, which leads to the decrease of recombination in photogenerated charge carriers and narrower band gaps. This work highlights an effective way to design photocatalysts with efficient hydrogen evolution by tuning the surface terminations.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS2013

Iodine Tagging Velocimetry and Mechanism in the Hypersonic Near Wake of a MultiPurpose Crew Vehicle

This study demonstrates a new molecular tagging velocimetry (MTV) method for velocity measurements of high speed flow. It demonstrates offbody Iodine Tagging Velocimetry (ITV) in the hypersonic near wake of a MultiPurpose Crew Vehicle (MPCV) model. Experiments are performed in the NASA-Langley 31-inch Mach 10 air wind tunnel. A 0.5% I2 / N2 mixture is seeded on the leeward backshell of the model using a pressure tap. I2 laser-induced fluorescence is excited along a 5.5 mm line using an ArF excimer laser near 193 nm. Results indicate I2 absorbs at least 2 photons to produce iodine ions and electrons. These recombine as the tagged region is displaced downstream to produce I (2P3/2) whose emission is monitored at 206 nm. Results at P0 = 2.41 MPa (350 psi), T0 = 990K, and 10 micro-sec transit times produce velocities from 630-820 m/sec across the I2 seeded jet at a distance of 38.2 mm (25.5 jet diameters) downstream from the jet orifice. Maximum wake jet velocities near the shear layer are 59% of freestream velocity.

Balla, R. Jeffrey↗
DOE OSTI2020

Deposition pressure dependent structural and optoelectronic properties of ex-situ boron-doped poly-Si/SiO x passivating contacts based on sputtered silicon

Among common methods to form polycrystalline silicon (poly-Si) films for passivating-contact solar cells, physical vapor deposition, in particular sputtering, is the safest one as it does not require any toxic gaseous precursors. One of the critical parameters to control the properties of sputtered silicon films is their deposition pressure. In this work, structural and optoelectronic characteristics of ex-situ boron-doped poly-Si/SiO x passivating contacts, formed from sputtered intrinsic amorphous silicon (a-Si) deposited at different pressures on top of SiO x /c-Si substrates and subjected to a high-temperature boron diffusion step, are investigated. The deposition rate and density of the as-deposited a-Si films increase with reducing pressure. Low-temperature photoluminescence spectra captured from the as-deposited samples at different pressures do not show typical emissions from hydrogenated a-Si. Meanwhile, their Fourier-transform infrared absorption spectra all show Si–H stretching modes, indicating that hydrogen had been initially incorporated into the chemical SiO x layers and eventually hydrogenated the a-Si/SiO x interfaces during the sputtering process. After the high-temperature boron-diffusion step, all hydrogen-related peaks disappear. Lower pressure films (1.5 and 2.5 mTorr) show more consistent improved performance after hydrogen treatments, compared to higher pressure films (4 and 5 mTorr). Overall, the resultant passivating contacts at 2.5 mTorr achieve a low single-side recombination current density Jo of ~9 fA/cm 2 , whereas their contact resistivity is still low at 15 mO cm 2 .

14 SOLAR ENERGY↗
DOE OSTI2020

Biexciton Condensation in Electron-Hole-Doped Hubbard Bilayers: A Sign-Problem-Free Quantum Monte Carlo Study

The bilayer Hubbard model with electron-hole doping is an ideal platform to study excitonic orders due to suppressed recombination via spatial separation of electrons and holes. However, suffering from the sign problem, previous quantum Monte Carlo studies could not arrive at an unequivocal conclusion regarding the presence of phases with clear signatures of excitonic condensation in bilayer Hubbard models. Here, we develop a determinant quantum Monte Carlo algorithm for the bilayer Hubbard model that is sign-problem-free for equal and opposite doping in the two layers and study excitonic order and charge and spin density modulations as a function of chemical potential difference between the two layers, on-site Coulomb repulsion, and interlayer interaction. In the intermediate coupling regime and in proximity to the SU(4)-symmetric point, we find a biexcitonic condensate phase at finite electron-hole doping, as well as a competing (π, π) charge density wave state. In this study, we extract the Berezinskii-Kosterlitz-Thouless transition temperature from superfluid density and a finite-size scaling analysis of the correlation functions and explain our results in terms of an effective biexcitonic hard-core boson model.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1973

Fabrication and properties of gallium phosphide variable colour displays

The unique properties of single-junction gallium phosphide devices incorporating both red and green radiative recombination centers were investigated in application to the fabrication of monolithic 5 x 7 displays capable of displaying symbolic and alphanumeric information in a multicolor format. A number of potentially suitable material preparation techniques were evaluated in terms of both material properties and device performance. Optimum results were obtained for double liquid-phase-epitaxial process in which an open-tube dipping technique was used for n-layer growth and a sealed tipping procedure for subsequent p-layer growth. It was demonstrated that to prepare devices exhibiting a satisfactory range of dominant wavelengths which can be perceived as distinct emission colors extending from the red through green region of the visible spectrum involves a compromise between the material properties necessary for efficient red emission and those considered optimum for efficient green emission.

Effer, D.↗
NASA NTRS1974

Influence of ablation impurities on blunt body re-entry ionization

Electron density profiles which include the effect of an ablated sodium impurity were computed for the boundary layer on a blunt-nosed body re-entering the atmosphere at 7.62 km/sec. Profiles are computed from the nose to a distance of four diameters along the RAM C-payload. A finite-difference, laminar, nonequilibrium chemistry boundary-layer program was used. Comparison of theory with S-band diagnostic antenna results, electron concentration deduced from X- and C-band attenuation data, and Langmuir probe data at several different aft body locations show that agreement is good at high altitude. At the lower altitudes there is disagreement between theory and S-band antenna data where the apparent discrepancy is attributed to the three-body recombination rate constant used for deionization of sodium coupled with the effect of angle of attack.

Schexnayder, C. J., Jr.↗
DOE OSTI2023

Design of InGaN-ZnSnGa 2 N 4 quantum wells for high-efficiency amber light emitting diodes

A novel type-II InGaN-ZnSnGa 2 N 4 quantum well (QW) structure is proposed based on recent experimental achievements for the successful epitaxy of ZnSnN 2 -GaN alloys and the determination of their band offsets with GaN. The simulation results indicate that this structure is promising as the active region for high-efficiency InGaN-based amber (λ ~ 590 nm) light-emitting diodes (LEDs). The hole wavefunction in the valence band is better confined with the insertion of a monolayer scale of ZnSnGa 2 N 4 into the InGaN QW while the electron wavefunction in the conduction band is better confined with the incorporation of an AlGaN layer in the GaN quantum barrier. The band structure of the InGaN-ZnSnGa 2 N 4 QW is numerically simulated based on the experimentally measured band offsets between ZnSnGa 2 N 4 and GaN. With the InGaN-ZnSnGa 2 N 4 QW design, a low In content (20%) is required in the InGaN layer to reach a peak emission wavelength of ~590 nm, yet an In composition of 25% is needed to reach the same emission wavelength for a conventional InGaN QW with the same layer thicknesses. Moreover, the electron-hole wavefunction overlap (Гe1-hh1) for the InGaN-ZnSnGa 2 N 4 QW design reaches 18% for an emission wavelength at ~590 nm. This result is much improved over the conventional InGaN QW overlap of 5% emitting at the same wavelength. The increase in electron-hole wavefunction overlap results in an approximately 14 times enhancement in the predicted spontaneous emission radiative recombination rate of the InGaN-ZnSnGa 2 N 4 QW as compared to that of the conventional InGaN QW. This InGaN-ZnSnGa 2 N 4 QW structure design can be promising to pave a new way to achieve high efficiency amber LEDs.

42 ENGINEERING↗
NASA NTRS1992

The growth and characterization of Al(x)Ga(1-x)As/Ge heterostructures

The effects of the growth temperature and the Al(x)Ga(1-x)As layer thickness on the structural, optical, and electrical properties of Al(x)Ga(1-x)As/Ge heterostructures grown for photovoltaic applications were investigated using different-thickness (between 1 micron and 5 microns) Al(x)Ga(1-x)As layers grown by MOCVD in the temperature range between 660 and 780 C. Results obtained from double-crystal X-ray rocking curve measurements, electron beam induced current, cross-sectional TEM, Raman spectroscopy, SIMS, and steady-state and time-resolved photoluminescence measurements are presented. It was found that the highest minority carrier lifetime, 2.41 ns, was obtained for T(G) = 780 C, but the lowest interfacial recombination velocity, 1.6 x 10 exp 4, was obtained at 660 C.

Choi, S. W.↗
DOE OSTI2021

Ultrafast charge dynamics and photoluminescence in bilayer MoS 2

Our examination of the interplay of ultrafast charge dynamics and electron–phonon interaction in the AA' stacked bilayer MoS 2 provides a microscopic basis for understanding the features (two peaks) in the emission spectrum. We demonstrate that while the initial accumulation of excited charge occurs at and near the Q point of the two-dimensional Brillioun zone, emission takes place predominantly through two pathways: direct charge recombination at the K point and indirect phonon-assisted recombination of electrons at the K valley and holes at the Γ hill of the Brillouin zone. Analysis of the wave vector dependencies of the electron–phonon interaction traces the higher energy peak to phonon-assisted relaxation of the excited electrons from the Q to the K valley in the conduction band. Our results thus reveal the importance of ultrafast charge dynamics in understanding photoemissive properties of a few-layer transition-metal dichalcogenide. These calculations are based on time dependent density functional theory in the density matrix formulation.

Materials Science↗
DOE OSTI2023

Sensitivity Enhancement and Random Telegraph Noise in Magnetic Tunnel Junctions with Compensated Anisotropy

We demonstrate the manipulation of perpendicular magnetic anisotropy (PMA) in magnetic tunnel junctions (MTJs) by varying the layer stacks and temperature. PMA is tuned to compensate the shape anisotropy, giving a nonhysteretic magnetic response, a noteworthy sensitivity enhancement, and a field detectability of 1.8 nT/$\sqrt{Hz}$ at 100 kHz. Such a method is further exemplified in multiple MTJs, providing a solution to obtain desired sensitivities and operating temperatures. Additionally, the electronic noise of this MTJ is revealed as a random telegraph noise (RTN) due to a generation-recombination process. In conclusion, the observed voltage-dependent RTN could potentially be applied to true random number generators.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1963

The solar cells and their mounting

Objectives in development of the solar plant for the Telstar spacecraft were to provide a power source which would withstand launching stresses and the expected space environment, with optimum end-of-life performance. Radiation damage to the silicon solar cells is the primary factor limiting their useful life; the effect of energetic protons or electrons is the generation of recombination centers in the silicon which reduce the minority-carrier diffusion length and therefore the long-wave response of the cell. The spacecraft solar cells use the n-on-p structure, in preference to conventional p-on-n structure, to obtain a factor of 3 to 10 increased life expectancy. Response to light in the 0.4 to 0.7 micron range is enhanced by using a thin n-layer (about 0.5 micron) and an antireflection coating with minimum reflectance at 0.55 micron wavelength. Early estimates of electron and proton fluxes in the satellite orbit showed that even the best cells would not give sufficient life without radiation shielding. Therefore the cells are protected against electrons of energy up to 1 Mev by 0.3 gm/sq. cm sapphire cover plates. The cell mountings are designed to withstand peak vibration stresses of 200 g and repeated temperature cycles from +65°C to −100°C. The 3600-cell solar power plant is composed of 300 twelve-cell groups of 1 cm × 2 cm cells, yielding a nominal initial power of 14 watts at 28 volts for any spin-axis orientation relative to the sun. Telemetry information on performance of the solar plant indicates degradation of the shielded solar cells equal to that measured in the laboratory on unshielded cells with a 1-Mev normal incidence flux of 6 × 10^(12) electrons/(sq. cm day). From this comparison it is estimated that the plant will degrade to 68 per cent of its initial output after two years in orbit.

SPACECRAFT POWER SUPPLY↗
NASA NTRS1979

The importance of surface recombination and energy-bandgap narrowing in p-n-junction silicon solar cells

Experimental data demonstrating the sensitivity of open-circuit voltage to front-surface conditions are presented for a variety of p-n-junction silicon solar cells. Analytical models accounting for the data are defined and supported by additional experiments. The models and the data imply that a) surface recombination significantly limits the open-circuit voltage (and the short-circuit current) of typical silicon cells, and b) energy-bandgap narrowing is important in the manifestation of these limitations. The models suggest modifications in both the structural design and the fabrication processing of the cells that would result in substantial improvements in cell performance. The benefits of one such modification - the addition of a thin thermal silicon-dioxide layer on the front surface - are indicated experimentally.

Fossum, J. G.↗
DOE OSTI2022

Efficient black silicon photovoltaic devices with enhanced blue response

A photovoltaic (PV) device with improved blue response. The PV device includes a silicon substrate with an emitter layer on a light receiving side. The emitter layer has a low opant level such that it has sheet resistance of 90 to 170 ohm/sq. Anti-reflection in the PV device is provided solely by a nano-structured or black silicon surface on the light-receiving surface, through which the emitter is formed by diffusion. The nano structures of the black silicon are formed in a manner that does not result in gold or another high-recombination metal being left in the black silicon such as with metal-assisted etching using silver. The black silicon is further processed to widen these pores so as to provide larger nanostructures with lateral dimensions in the range of 65 to 150 nanometers so as to reduce surface area and also to etch away a highly doped portion of the emitter.

Oh, Jihun↗
DOE OSTI2024

Aging Mechanisms of Broad Area ~800 nm Laser Diodes

Here, this work presents a comprehensive study of early aging behavior (<500 hr) in ~800 nm, phosphide-based laser diodes grown by solid-source MBE with different oxygen concentration levels incorporated into the diode epitaxial layers during growth. The data indicate that lasing characteristics prior to aging are degraded by oxygen introduction, but the gradual power degradation rate after the onset of aging is not a strong function of oxygen at these concentration levels. Devices with oxygen concentrations of ~2.5 × 10 15 cm -3 showed significantly longer delay before the onset of aging (incubation time) than devices with less than 1 × 10 15 cm -3 oxygen. Generation-Recombination current and Laser Beam Induced Current measurements indicate that defect densities and aggregation are suppressed at the facets by oxygen, which can explain longer incubation times. Diagnostic data and parametric fits to diode simulation models show that increased cavity optical loss and defect density are primarily responsible for gradual power degradation during aging, rather than changes in nonradiative recombination. Mechanisms are proposed that explain this behavior, based on density functional theory (DFT) simulations and known recombination-enhanced defect generation phenomena.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Efficient and bright white light-emitting diodes based on single-layer heterophase halide perovskites

At present, electric lighting accounts for ~15% of global power consumption and thus the adoption of efficient, low-cost lighting technologies is important. Here, halide perovskites have been shown to be good emitters of pure red, green and blue light, but an efficient source of broadband white electroluminescence suitable for lighting applications is desirable. Here, we report a white light-emitting diode (LED) strategy based on solution-processed heterophase halide perovskites that, unlike GaN white LEDs, feature only one broadband emissive layer and no phosphor. Our LEDs operate with a peak luminance of 12,200 cd m –2 at a bias of 6.6 V and a maximum external quantum efficiency of 6.5% at a current density of 8.3 mA cm –2 . Systematic in situ and ex situ characterizations reveal that the mechanism of efficient electroluminescence is charge injection into the α phase of CsPbI 3 , α to δ charge transfer and α–δ balanced radiative recombination. Future advances in fabrication technology and mechanistic understanding should lead to further improvements in device efficiency and luminance.

36 MATERIALS SCIENCE↗
NASA NTRS1979

Plasma acceleration at the earth's magnetopause - Evidence for reconnection

Observations of high-speed plasma at the magnetopause in agreement with theoretical predictions of magnetic field reconnection are reported. Plasma ion and electron distributions measured by the quadrispherical analyzers on board the ISEE 1 and 2 spacecraft were obtained during the outbound traversal of the subsolar magnetopause. Plasma flow speeds of up to 450 km/sec were observed in the magnetopause layer, in contrast to speeds of 50 to 100 km/sec in the adjacent magnetosheath. The observations agree with the predictions of the reconnection model of the dayside magnetopause, in which the magnetopause is described as a rotational discontinuity, or a large-amplitude Alfven wave. It is noted that the lack of observations of plasma acceleration in most other cases of favorable magnetic field orientation could be a product of the rarity of magnetic recombination, or its small scale and nonstationarity.

Paschmann, G.↗