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At least 433 records · Page 24

All sources NASA NTRS DOE OSTI

DOE OSTI2025

Field-free switching of perpendicular magnetization in a ferrimagnetic insulator with spin reorientation transition

Writing magnetic bits through spin-orbit torque (SOT) switching is promising for fast and efficient magnetic random-access memory devices. While SOT switching of out-of-plane (OOP) magnetized states requires lateral symmetry breaking, in-plane (IP) magnetized states suffer from low storage density. Here, we demonstrate a field-free switching scheme using a 5-nanometer europium iron garnet film grown with a (110) orientation that shows a spin reorientation transition from OOP to IP above room temperature. This scheme combines the benefits of high-density storage in the OOP states at room temperature and the efficient field-free SOT switching in the IP states at elevated temperatures. While conventional switching of OOP bits faces the dilemma that high OOP anisotropy is required to improve bit stability and low OOP anisotropy is required to lower switching current density, this scheme disentangles this interdependence, allowing for low switching currents to be possible without sacrificing the bit stability, offering opportunities for future memory devices.

Science & Technology - Other Topics↗

NASA NTRS2013

Fatigue Resistance of Liquid-assisted Self-repairing Aluminum Alloys Reinforced with Shape Memory Alloys

A self-repairing aluminum-based composite system has been developed using a liquid-assisted healing theory in conjunction with the shape memory effect of wire reinforcements. The metal-metal composite was thermodynamically designed to have a matrix with a relatively even dispersion of a low-melting eutectic phase, allowing for repair of cracks at a predetermined temperature. Additionally, shape memory alloy (SMA) wire reinforcements were used within the composite to provide crack closure. Investigators focused the research on fatigue cracks propagating through the matrix in order to show a proof-of-concept Shape Memory Alloy Self-Healing (SMASH) technology for aeronautical applications.

Wright, M. Clara↗

NASA NTRS2018

Comparison of Iced Aerodynamic Measurements on a Swept Wing from Two Wind Tunnels

Artificial ice shapes of various geometric fidelity were tested on a wing model based on the Common Research Model. Low Reynolds number tests were conducted at Wichita State University's Beech Memorial Wind Tunnel, and high Reynolds number tests were conducted at ONERA's F1 wind tunnel. The aerodynamic performance data from the two facilities were compared at matched or similar Reynolds and Mach number to ensure that the results and trends observed at low Reynolds number could be applied and continued to high Reynolds number. For both clean and iced configurations, the data from Wichita State University and F1 agreed well at matched or similar Reynolds and Mach numbers. The lift and pitching moment curves agreed very well for most configurations. There appeared to be 0.2-0.3deg offset in the angle of attack between the Wichita State University and F1 data, possibly due to different flow angularities in the test sections of the two facilities. There was also an offset in the drag values between the two facilities from an unknown cause. Overall, the data compared very well between the low Reynolds number test at Wichita State University tunnel and the high Reynolds number test at F1. This indicated that data from the low Reynolds number tests could be used to understand iced-swept-wing aerodynamics at high Reynolds number.

Federal Aviation Administration↗

DOE OSTI2026

Memsensing by surface ion migration within Debye length

Integration between electronics and biology is often facilitated by iontronics, where ion migration in aqueous media governs sensing and memory. However, the Debye screening effect limits electric fields to the Debye length, the distance over which mobile ions screen electrostatic interactions, necessitating external voltages that constrain the operation speed and device design. Here we report a high-speed in-memory sensor based on vanadium dioxide (VO2) that operates without an external voltage by leveraging built-in electric fields within the Debye length. When VO2 contacts a low-work-function metal (for example, indium) in a salt solution, electrochemical reactions generate indium ions that migrate into the VO2 surface under the native electric field, inducing a surface insulator-to-metal phase transition of VO2. The VO2 conductance increase rate reflects the salt concentration, enabling in-memory sensing, or memsensing of the solution. The memsensor mimics Caenorhabditis elegans chemosensory plasticity to guide a miniature boat for adaptive chemotaxis, illustrating low-power aquatic neurorobotics with fewer memory units.

Guo, Ruihan↗

DOE OSTI2016

Optimizing a Multiple Right-Hand Side Dslash Kernel for Intel Knights Corner

Lattice Quantum Chromo-dynamics (LQCD) stands unique as the only computationally tractable, non-perturbative, and model-independent quantum field theory of the strong nuclear force. LQCD achieves tractability by discretizing our familiar 4-dimensional space-time onto a hypercubic lattice. The core component of the linear solver used in LQCD is the Wilson-Dirac operator whose finite difference component is called the Dslash operator. Dslash is a nearest neighbor stencil operator summing matrix-vector multiplications over lattice points. The arithmetic intensity of a regular Dslash operator acting on a single vector in single precision is between 0.88-2.29 (depending on the tricks employed) making it memory bandwidth bound on most current architectures, including Xeon Phi. Maximizing the performance of Dslash on Xeon Phi requires deliberate exploitation of its architectural features. One key feature of Xeon Phi is its powerful vector processing unit with lengthy vector registers. There is a class of LQCD computations which aims to solve the Dirac equation for the same lattice gauge fields multiple times. In this case one can gain additional reuse of the gauge field, and potentially simplified vectorization, through applying Dslash to several vectors at the same time; often referred to as Multiple Right Hand Side (MRHS) Dslash. Previous work in this area focused on applying this approach to the Highly Improved Staggered operator, and in cases to the multi-Grid algorithm for Wilson clover fermions. Here, we present two approaches to MRHS Dslash: a vector register blocking approach and one using the software package QPhiX with a custom Code Generator for low-level intrinsics. We explore the Knights Corner instruction set, memory hierarchy, and threading capabilities. For standard lattice sizes used in testing, we observed significant speedups, with sustained performance of over 700 GFLOPS (single precision) in one instance. We achieved up to 27% of theoretical peak performance compared to a maximum of 12% obtained by the previous single RHS method in QPhiX.

Joó, Bálint↗

NASA NTRS1975

Multimission spacecraft Dataplexer

The data multiplexing unit described is a low-power small-size building-block-type central data system designed for use on such spacecraft as the International Ultraviolet Explorer or the International Sun-Earth Explorer. Preprogrammed read-only memories are used to generate the telemetry format tailored to particular mission requirements. Low weight and low power dissipation are achieved with the aid of PMOS technology. The use of subcommutators in groups to meet particular spacecraft requirements allows low data rate experiments to be time-multiplexed into a single main input channel, to improve data collection and processing operations. The block diagram of the Dataplexer is discussed.

Cosme, R.↗

NASA NTRS1983

Load sequence effects on graphite/epoxy /+, -35/2s laminates

Load sequence effects on composite material fatigue behavior are due to the difference in residual strength when fatigue occurs, or the 'boundary effect', and the 'material money effect' due to previous loads. The present model, which allows the isolation of the effects of memory from those of boundary, has been investigated through a test program for the case of /+, -35/2s graphite/epoxy laminates under high-low and low-high load sequences which generated statistical residual strength data. As predicted by the model, the memory effect is present and a good correlation is obtained between test results and the theoretical predictions for both median residual strength and the expected percentage of fatigue failures under dual loading. It is noted, however, that the statistical dispersion of the residual strength test results is much smaller than that of the static ultimate strength.

Yang, J. N.↗

DOE OSTI2014

AYUSH: A Technique for Extending Lifetime of SRAM-NVM Hybrid Caches

Recently, researchers have explored way-based hybrid SRAM-NVM (non-volatile memory) last level caches (LLCs) to bring the best of SRAM and NVM together. However, the limited write endurance of NVMs restricts the lifetime of these hybrid caches. We present AYUSH, a technique to enhance the lifetime of hybrid caches, which works by using data-migration to preferentially use SRAM for storing frequently-reused data. Microarchitectural simulations confirm that AYUSH achieves larger improvement in lifetime than a previous technique and also maintains performance and energy efficiency. For single, dual and quad-core workloads, the average increase in cache lifetime with AYUSH is 6.90X, 24.06X and 47.62X, respectively.

device lifetime↗

NASA NTRS2000

Advanced Compact Holographic Data Storage System

JPL, under current sponsorship from NASA Space Science and Earth Science Programs, is developing a high-density, nonvolatile and rad-hard Advanced Holographic Memory (AHM) system to enable large-capacity, high-speed, low power consumption, and read/write of data in a space environment. The entire read/write operation will be controlled with electro-optic mechanism without any moving parts. This CHDS will consist of laser diodes, photorefractive crystal, spatial light modulator, photodetector array, and I/O electronic interface. In operation, pages of information would be recorded and retrieved with random access and highspeed. The nonvolatile, rad-hard characteristics of the holographic memory will provide a revolutionary memory technology to enhance mission capabilities for all NASA's Earth Science Mission. In this paper, recent technology progress in developing this CHDS at JPL will be presented.

Chao, Tien-Hsin↗

DOE OSTI2017

Simplified Interface to Complex Memory Hierarchies 1.x

Memory systems are expected to get evermore complicated in the coming years, and it isn't clear exactly what form that complexity will take. On the software side, a simple, flexible way of identifying and working with memory pools is needed. Additionally, most developers seek code portability and do not want to learn the intricacies of complex memory. Hence, we believe that a library for interacting with complex memory systems should expose two kinds of abstraction: First, a low-level, mechanism-based interface designed for the runtime or advanced user that wants complete control, with its focus on simplified representation but with all decisions left to the caller. Second, a high-level, policy-based interface designed for ease of use for the application developer, in which we aim for best-practice decisions based on application intent. We have developed such a library, called SICM: Simplified Interface to Complex Memory.

Lang, Michael↗

DOE OSTI2017

Simplified Interface to Complex Memory Hierarchies 1.x

Lang, Michael↗

DOE OSTI2023

Sparsity of the electron repulsion integral tensor using different localized virtual orbital representations in local second-order Møller–Plesset theory

Utilizing localized orbitals, local correlation theory can reduce the unphysically high system-size scaling of post-Hartree–Fock (post-HF) methods to linear scaling in insulating molecules. The sparsity of the four-index electron repulsion integral (ERI) tensor is central to achieving this reduction. For second-order Møller–Plesset theory (MP2), one of the simplest post-HF methods, only the (ia|jb) ERIs are needed, coupling occupied orbitals i, j and virtuals a, b. In this paper, we compare the numerical sparsity (called the “ragged list”) and two other approaches revealing the low-rank sparsity of the ERI. The ragged list requires only one set of (localized) virtual orbitals, and we find that the orthogonal valence virtual-hard virtual set of virtuals originally proposed by Subotnik et al. gives the sparsest ERI tensor. To further compress the ERI tensor, the pair natural orbital (PNO) type representation uses different sets of virtual orbitals for different occupied orbital pairs, while the occupied-specific virtual (OSV) approach uses different virtuals for each occupied orbital. Here, our results indicate that while the low-rank PNO representation achieves significant rank reduction, it also requires more memory than the ragged list. The OSV approach requires similar memory to that of the ragged list, but it involves greater algorithmic complexity. An approximation (called the “fixed sparsity pattern”) for solving the local MP2 equations using the numerically sparse ERI tensor is proposed and tested to be sufficiently accurate and to have highly controllable error. A low-scaling local MP2 algorithm based on the ragged list and the fixed sparsity pattern is therefore promising.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

NASA NTRS2016

Ab Initio Simulations of Phase Stability and Martensitic Transitions in NiTi

For NiTi based alloys, the shape memory effect is governed by a transition from a low-temperature martensite phase to a high-temperature austenite phase. Despite considerable experimental and computational work, basic questions regarding the stability of the phases and the martensitic phase transition remain unclear even for the simple case of binary, equiatomic NiTi. We perform ab initio molecular dynamics simulations to describe the temperature-dependent behavior of NiTi and resolve several of these outstanding issues. Structural correlation functions and finite temperature phonon spectra are evaluated to determine phase stability. We show that finite temperature, entropic effects stabilize the experimentally observed martensite (B19') and austenite (B2) phases while destabilizing the theoretically predicted (B33) phase. Free energy computations based on ab initio thermodynamic integration confirm these results and permit estimates of the transition temperature between the phases. In addition to the martensitic phase transition, we predict a new transition between the B33 and B19' phases. The role of defects in suppressing phase transformation temperatures is discussed.

Simulations↗

DOE OSTI2025

Architecture-Aware Models of AI Engines for High-Performance Matrix Matrix Multiplication

The AI Engine (AIE) architecture, available in systems from mobile SoCs to server-class FPGAs, aims to efficiently execute AI/ML tasks through a two-dimensional array of compute tiles. Previous work on AIEs has explored different approaches to mapping computation across spatial arrays, but the compute kernel running on each tile has not been the focus. Additionally, the AIE-ML architecture introduces memory tiles and omits programmable logic, requiring new approaches to staging and moving data throughout the array. In this work we update analytical models developed for CPUs to produce the design of high performance kernels while introducing new model considerations such as memory structure, throughput, and latency as required by the AIE hardware. We evaluate our models by developing AIE-ML kernels for matrix multiplication in low-precision data types showing performance up to 95% of compute peak for the kernel when data resides in local memory and above 90% of compute peak when data resides in main memory.

Binder, Elliott D. [Carnegie Mellon University, Pi↗

NASA NTRSDate not supplied

Data-Driven Study of Shape Memory Behavior of Multi-Component Ni-Ti Alloys

Ni-Ti based shape memory alloys (SMAs) have found wide-spread use in aerospace, automotive, biomedical, and commercial applications owing to their favorable properties and ease of operation. Especially important for many NASA applications is the ability to tune the martensitic transformation temperature of Ni-Ti alloys by varying the alloy composition and processing conditions. Recently, researchers at NASA have compiled an extensive database of shape memory properties of materials, including over 8,000 multi-component Ni-Ti alloys containing 37 different alloying elements. Using this dataset, machine learning models are trained to predict transformation temperatures, hysteresis, and transformation strain with extremely low mean absolute errors. These models are used to learn relationships between shape memory behavior and input parameters in the composition and processing space. ML predictions are validated through new experiments. The combination of an extensive experimental dataset and accurate learning models, together, make our approach highly suitable for the rapid discovery and design of novel SMAs with targeted properties. We are not aware of any current approaches capable of predicting SMA transformation behavior over such a wide range of compositions and processing conditions.

Shape memory alloys↗

DOE OSTI2017

An Ultrathin Single Crystalline Relaxor Ferroelectric Integrated on a High Mobility Semiconductor

The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, ferroelectric materials integrated on semiconductors could lead to low-power field-effect devices that can be used for logic or memory. Essential to realizing such field-effect devices is the development of ferroelectric metal-oxide-semiconductor (MOS) capacitors, in which the polarization of a ferroelectric gate is coupled to the surface potential of a semiconducting channel. Here we demonstrate that ferroelectric MOS capacitors can be realized using single crystalline SrZr x Ti 1-x O 3 (x= 0.7) that has been epitaxially grown on Ge. We find that the ferroelectric properties of SrZr x Ti 1-x O 3 are exceptionally robust, as gate layers as thin as 5 nm give rise to hysteretic capacitance-voltage characteristics that are 2 V in width. The development of ferroelectric MOS capacitors with gate thicknesses that are technologically relevant opens a pathway to realize scalable ferroelectric field-effect devices.

Moghadam, Reza M.↗

NASA NTRS1980

A design study of a signal detection system

A system is described which can aid in the search for radio signals from extraterrestrial sources, or in other applications characterized by low signal-to-noise ratios and very high data rates. The system follows a multichannel (16 million bin) spectrum analyzer, and has critical processing, system control, and memory fuctions. The design includes a moderately rich set of algorithms to be used in parallel to detect signals of unknown form. A multi-threshold approach is used to obtain high and low signal sensitivities. Relatively compact and transportable memory systems are specified.

Healy, T. J.↗

NASA NTRS1990

Supporting shared data structures on distributed memory architectures

Programming nonshared memory systems is more difficult than programming shared memory systems, since there is no support for shared data structures. Current programming languages for distributed memory architectures force the user to decompose all data structures into separate pieces, with each piece owned by one of the processors in the machine, and with all communication explicitly specified by low-level message-passing primitives. A new programming environment is presented for distributed memory architectures, providing a global name space and allowing direct access to remote parts of data values. The analysis and program transformations required to implement this environment are described, and the efficiency of the resulting code on the NCUBE/7 and IPSC/2 hypercubes are described.

Koelbel, Charles↗