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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 433 records · Page 24
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

A pixel detector ROIC with a 3-bit, 40 Msps synchronous ADC per pixel for HL LHC

The prototype Fermi Compact Muon Solenoid (CMS) Pixel (FCP130), manufactured in a 130 nm process, is a readout integrated circuit (ROIC) designed for the High Luminosity upgrade of the Large Hadron Collider. It employs a synchronous analog to digital converter (ADC) for the front-end design, with signal processing and data conversion within a single bunch crossing of 25 ns. It is therefore capable of accurately detecting hits occurring in consecutive bunch crossings, without off-time registration of events, making it particularly suitable for the inner most layers of the vertex detector. The ROIC consists of a matrix of 48 × 160 pixels, each 100 × 30 μm2 in size. Each pixel contains a charge sensitive preamplifier with self-biasing leakage current compensation, eight auto-zero comparators and a Gray code encoder for a 3-bit flash-type ADC. The total power consumption is approximately 24 μW per pixel. The measured noise at the output of all the hit comparators across the ROIC is < 80 e- with threshold dispersion < 110 e-RMS, which allows an in-time threshold setting of ~ 1000 e-.

43 PARTICLE ACCELERATORS↗
DOE OSTI2021

SIR Glass Test Vehicle Designed to Characterize Process Materials

The exposure to harsh environments can result in reliability issues on highly dense electronic packages and circuit assemblies. One area of concern is electrochemical failure mechanisms caused by electrolytic corrosion, electrochemical migration (dendrites), and leakage currents under humid conditions. These no-fault and no-trouble found failure points are challenging to detect and to perform process control during the assembly process. The focus of this research centers on metallizing glass surface insulation resistance test vehicles to characterize materials on electronic packages and components that exhibit the highest risk of failure due to material interactions and process residues. Glass test vehicles provide a visual representation of materials when they are exposed to moisture content in the air. Harsh environments can cause material interactions resulting in morphology changes, opening, and release of active components. A transparent test vehicle is highly functional for environmental stress testing under temperature, humidity, and bias. The designed experiment will evaluate the effects of material and process residues that can undergo changes in behavior during application, which leads to local failures.

Capen, Bill↗
DOE OSTI2022

Microwatt fuel cell stack

A microwatt fuel cell stack that demonstrates a wide range temperature tolerance, low reactant cross-over and leakage, low internal leakage current, and/or effective water transport is disclosed. Both H 2 and O 2 may be supplied directly to the fuel cell stack (i.e., dead-ended). One-piece gas diffusion electrodes (GDEs) may serve as both the active electrode and manifold port. Water removal may be accomplished by permeation through the membrane to “fins” exposed by notches in the bipolar plates and gaskets.

Wilson, Mahlon Scott↗
DOE OSTI2022

Evaluation of Bifacial Modules and PV Technologies with Combined-Accelerated Stress Testing

In view of the increasing interest and market share of bifacial cells and modules, suitable substrates such as glass and transparent backsheets along with ethylene vinyl acetate (EVA) and polyolefin elastomer (POE) encapsulants were examined in combined-accelerated stress testing (C-AST) to evaluate and compare degradation modes. Testing with both monofacial and bifacial cells, we found glass-glass modules with monofacial cells led to greater grid finger breakage than those with polymeric backsheets. This is attributed to previous x-ray topography work showing higher stress in cells in glass-glass modules than glass backsheet modules. Consistent with the objectives of C-AST, which stresses modules at levels corresponding to the limits seen in the natural environment, we observed the UV-fluorescence signatures of modules tested in C-AST (considering the degradation associated with developing chromophores, moisture penetration and photobleaching effects) to be like those in fielded modules, more so than other chamber stress testing implemented for comparison. Finally, among multiple cell degradation modes that we observed such as light-induced degradation (LID), we differentiated susceptibility to potential-induced degradation (PID) on the back of the bifacial Passivated Emitter Back Cells (PERC) in C-AST. Confirming with ex-situ tests, we found polarization-type PID most prevalent in glass/glass modules with EVA as would be anticipated considering the greater leakage current through such module encapsulation. Unlike PID tests performed in the dark, which can lead to false positive PID test results, field-representative illumination is experienced by the modules on the front and back side while -1200 V system voltage is applied in C-AST, supporting the conclusion that this module type would be susceptible to PID in the field.

bifacial modules↗
DOE OSTI2023

In-Pixel Readout IC with compact in-pixel ADC for Pixel detectors at HL LHC

The prototype Smart Pixel concept test chip (SP28), designed in a CMOS 28 nm bulk process, is a proof of concept readout integrated circuit (ROIC) designed for a future Phase III High Luminosity upgrade of the Large Hadron Collider. It employs a synchronous analog to digital converter (ADC) for the front-end design, with signal processing and data conversion within a single bunch crossing of 25 ns. It is therefore capable of accurately detecting hits occurring in consecutive bunch crossings, without off-time registration of events and pileup insensitivity, making it particularly suitable for the inner most layers of the vertex detector. The ROIC consists of a matrix of 32 × 16 pixels, each 25 × 25 µm 2 in size. Each pixel contains a charge sensitive preamplifer with leakage current compensation, three auto-zero comparators for a 2-bit fash-type ADC. The total power consumption is approximately 5 µW per pixel. The measured noise at the output of all the hit comparators across the ROIC is < 90 e- with threshold dispersion < 45 e-RMS, which allows an in-time threshold setting of ≈ 475 e-.

Parpillon, Benjamin↗
DOE OSTI2023

Programmable delay device enabling large delay in small package

A programmable delay device that provides delays of more than 100 ns over a broad bandwidth is disclosed. The device includes an input stage that employs M sampling switched capacitor elements such that each sampling switched capacitor element samples at a rate of only 1/M of the fundamental sampling rate. The device includes a programmable delay stage with M programmable switched capacitor banks, each programmable switched capacitor bank having N delay switched capacitor storage elements. Thus, the programmable delay stage includes a total of M×N delay switched capacitor storage elements, thereby reducing the sampling rate by a factor of M×N. This reduced sampling rate permits much smaller sampling switches, resulting in reduced leakage current and enabling far longer programmable delay times. Lastly, the device includes an output reconstruction stage that reconstructs a delayed version of the input RF signal by combining signals from the programmable delay stage.

Forbes, Travis↗
DOE OSTI2024

Smart Pixels: In-pixel AI for on-sensor data filtering

We present a smart pixel prototype readout integrated circuit (ROIC) designed in CMOS 28 nm bulk process, with in-pixel implementation of an artificial intelligence (AI) / machine learning (ML) based data filtering algorithm designed as proof-of-principle for a Phase III upgrade at the Large Hadron Collider (LHC) pixel detector. The first version of the ROIC consists of two matrices of 256 smart pixels, each 25$\times$25 $\mu$m$^2$ in size. Each pixel consists of a charge-sensitive preamplifier with leakage current compensation and three auto-zero comparators for a 2-bit flash-type ADC. The frontend is capable of synchronously digitizing the sensor charge within 25 ns. Measurement results show an equivalent noise charge (ENC) of $\sim$30e$^-$ and a total dispersion of $\sim$100e$^-$ The second version of the ROIC uses a fully connected two-layer neural network (NN) to process information from a cluster of 256 pixels to determine if the pattern corresponds to highly desirable high-momentum particle tracks for selection and readout. The digital NN is embedded in-between analog signal processing regions of the 256 pixels without increasing the pixel size and is implemented as fully combinatorial digital logic to minimize power consumption and eliminate clock distribution, and is active only in the presence of an input signal. The total power consumption of the neural network is $\sim$ 300 $\mu$W. The NN performs momentum classification based on the generated cluster patterns and even with a modest momentum threshold, it is capable of 54.4% - 75.4% total data rejection, opening the possibility of using the pixel information at 40MHz for the trigger. The total power consumption of analog and digital functions per pixel is $\sim$ 6 $\mu$W per pixel, which corresponds to $\sim$ 1 W/cm$^2$ staying within the experimental constraints.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Impact of 12-nm FinFET Technology Variations on TID Effects: A Comparative Study of GF 12LP and 12LP+ at the Transistor Level

Here, this article presents a comparative analysis of total ionizing dose (TID) response in GlobalFoundries’ (GF) 12 low-power (LP) and 12LP+12-nm bulk fin field effect transistor (FinFET) technologies using 10-keV X-rays. Our findings show that 12LP+ n-type transistors demonstrate higher sensitivity to TID degradation of the off-state leakage drain current compared to 12LP. Data indicate that for both 12LP and 12LP+, transistors with higher threshold voltages (VTs) exhibit lower off-state drain-source leakage postirradiation compared to transistors with lower VTs. Data consistently show that transistors with fewer fins per transistor show superior TID tolerance, in both 12LP and 12LP+ technologies. Lower VT transistors in both technologies display similar preirradiation leakage currents. On the other hand, higher VT transistors in 12LP+ show lower preirradiation leakage currents than those in 12LP, highlighting that the front-end-of-line of 12LP+ technology has been modified compared to 12LP. p-type devices in 12LP+ presented negligible degradation. Larger TID sensitivity in 12LP+ might be attributed to the implementation of dual-metal gate work functions, reduced halo doping, deeper source/drain (S/D) doping profiles, and/or 12LP+ having narrower fins compared to 12LP.

Dual-metal gate work functions↗
DOE OSTI2021

New Modulation and Impact of Transformer Leakage Inductance on Current-Source Solid-State Transformer

This article presents a novel modulation scheme for device voltage stress mitigation and comprehensive analysis of the impact of transformer leakage inductance in a current-source solid-state transformer (SST). Different from dual active bridge (DAB) SST, the operation of the current-source SST is similar to that of a flyback converter. The device bridge on only one side of the transformer is active to store energy into or release energy from the magnetizing inductance which acts as a current-source dc link. Such flyback operation with reverse-blocking switches can lead to additional device voltage stress and incomplete zero-voltage switching (ZVS) on the current-source soft-switching solid-state transformer (S4T) under conventional modulation. A new modulation scheme is proposed to address this issue. Moreover, different from the DAB, the leakage inductance of the medium-frequency transformer (MFT) in the S4T is a parasitic element similar to that in a matrix SST and can cause additional device voltage stress. Though the resonant capacitors, originally added to achieve ZVS, can absorb and recycle the leakage energy in the S4T, these capacitors need to be increased with larger leakage inductances to limit the voltage stress. However, large resonant capacitors can result in more lost duty cycles and reduced efficiency. The impact of such leakage inductance on device voltage stress is analyzed comprehensively, which is critical to guide future research and design of the S4T. Experimental results from S4T prototypes for DC-DC, multiport AC-DC, and AC-AC conversion with 1:1 and 4:1 MFT comprehensively verify the proposed concepts. Lastly, a case study of a three-phase AC-AC S4T over a power range from 1 kVA to 100 kVA each module reveals that the MFT leakage inductance should be less than 1% of the magnetizing inductance for safe operation.

14 SOLAR ENERGY↗
NASA NTRS1971

Nonvolatile read/write memory element - A concept

Bidirectional MOS driver, integrated with diode matrix reduces fuse read current to only that of junction leakage and transient MOS gate charging current. No current, except junction leakage current, flows in unaddressed cells. Current required to drive MOS gate flows through unfused branch only during read mode.

Cricchi, J. R.↗
NASA NTRS2001

2D Quantum Transport Modeling in Nanoscale MOSFETs

We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions, oxide tunneling and phase-breaking scattering are treated on an equal footing. Electron bandstructure is treated within the anisotropic effective mass approximation. We present the results of our simulations of MIT 25 and 90 nm "well-tempered" MOSFETs and compare them to those of classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. These results are consistent with 1D Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and subthreshold current has been studied. The shorter gate length device has an order of magnitude smaller leakage current than the longer gate length device without a significant trade-off in on-current.

Svizhenko, Alexei↗
DOE OSTI2020

Testing Rod Seal Leakage of a 700 HP Reciprocating Compressor

Methane emissions from reciprocating compressors in the U.S. natural gas industry account for over 72.4 Bcf per year according to a 2006 statement by the United States Environmental Protection Agency. Methane also has a global warming potential 50 times greater than carbon monoxide. Reciprocating compressors are the machinery type with the highest contribution to methane emissions at natural gas transmissions stations. The largest contributing factor comes from the sealing components in the packing components around the piston rod. SwRI, therefore, designed and setup a test loop to perform baseline packing leakage measurements on a four stage 700 HP JGT/4 compressor. The goal was to improve upon current packing leakage models and to compare new seals vs. used seals. The test loop design is described including the limits of operation. The Data Acquisition System (DAQ), including data measurements, is also fully described. The project shows the results of the commissioning process that verified the operation of all the components. Once the loop was commissioned, SwRI performed baseline packing leakage for multiple pressure ratios on each of the four stages of the compressor. The data was collected to develop an analytical model of the packing leakage. Finally, similar testing was performed after replacing the typical rod seal packing with used packing. The used packing leakage was compared to the baseline packing leakage.

03 NATURAL GAS↗
NASA NTRS2002

Integrated CMOS photodetectors and signal processing for very low-level chemical sensing with the bioluminescent bioreporter integrated circuit

We report an integrated CMOS microluminometer optimized for the detection of low-level bioluminescence as part of the bioluminescent bioreporter integrated circuit (BBIC). This microluminometer improves on previous devices through careful management of the sub-femtoampere currents, both signal and leakage, that flow in the front-end processing circuitry. In particular, the photodiode is operated with a reverse bias of only a few mV, requiring special attention to the reset circuitry of the current-to-frequency converter (CFC) that forms the front-end circuit. We report a sub-femtoampere leakage current and a minimum detectable signal (MDS) of 0.15 fA (1510 s integration time) using a room temperature 1.47 mm2 CMOS photodiode. This microluminometer can detect luminescence from as few as 5000 fully induced Pseudomonas fluorescens 5RL bacterial cells. c2002 Elsevier Science B.V. All rights reserved.

Non-NASA Center↗
NASA NTRS1987

Clipper for High-Impedance Current-Drive Line

New circuit leakage reduced by shunting current through saturated input at operational-amplifier follower already part of Howland, or equivalent, current source. Typical application is in circuit of germanium resistance thermometer in cryogenic system.

Woodhouse, Christopher E.↗
DOE OSTI2022

A compact light shield for the Psyche gamma-ray spectrometer

A compact, low-mass light shield has been designed for the Psyche space mission high-purity germanium gamma-ray spectrometer. The spectrometer will be vented to space, which can allow solar photons to enter the cryostat and cause charge-induced noise. The light shield was designed to block more than 99.9% of solar photons while maintaining high molecular conductance to space vacuum. COMSOL simulations and experiments were performed to characterize light shield photon attenuation and molecular conductance. Finally, the light shield was integrated onto the gamma-ray spectrometer and photon suppression and vacuum performance were demonstrated.

(16) Psyche↗
DOE OSTI2023

Fabrication of Large-Area Metal-on-Carbon Catalytic Condensers for Programmable Catalysis

Catalytic condensers stabilize charge on either side of a high-k dielectric film to modulate the electronic states of a catalytic layer for the electronic control of surface reactions. Here, carbon sputtering provided for fast, large-scale fabrication of metal–carbon catalytic condensers required for industrial application. Carbon films were sputtered on HfO 2 dielectric/p-type Si with different thicknesses (1, 3, 6, and 10 nm), and the enhancement of conductance and capacitance of carbon films was observed upon increasing the carbon thickness following thermal treatment at 400 °C. After Pt deposition on the carbon films, the Pt catalytic condenser exhibited a high capacitance of ∼210 nF/cm 2 that was maintained at a frequency ∼1000 Hz, satisfying the requirement for a dynamic catalyst to implement catalytic resonance. Temperature-programmed desorption of carbon monoxide yielded CO desorption peaks that shifted in temperature with the varying potential applied to the condenser (−6 or +6 V), indicating a shift in the binding energy of carbon monoxide on the Pt condenser surface. A substantial increase in capacitance (∼2000 nF/cm 2 ) of the Pt-on-carbon devices was observed at elevated temperatures of 400 °C that can modulate ∼10% of charge per metal atom when 10 V potential was applied. A large catalytic condenser of 42 cm 2 area Pt/C/HfO 2 /Si exhibited a high capacitance of 9393 nF with a low leakage current/capacitive current ratio (<0.1), demonstrating the practicality and versatility of the facile, large-scale fabrication method for metal–carbon catalytic condensers.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Protonic ceramic materials for clean and sustainable energy: advantages and challenges

In recent years, the hydrogen economy has been strongly favoured by governmental and industrial bodies worldwide. A tremendous number of papers are published every year on different aspects of protonic ceramic electrochemical cells (PCECs) due to their lower operation temperature, easier reversible operation, and brighter prospects for further development. While new progress is being made continuously, many critical challenges remain. The effort on PCEC investigation could be more aligned for greater collective impact, e.g. the academic community could devote more effort to overdue critical problems but less to incremental improvements. This review aims to provide some insightful perspectives on critical challenges facing the development of PCECs, to sort out priorities in future effort, and to suggest promising directions to pursue. In this way, it is hoped that the technical readiness level of PCECs might advance more quickly, toward field demonstrations and commercialization for a clean and sustainable energy era.

36 MATERIALS SCIENCE↗