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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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A measurement circuit to obtain buffet data from wind tunnel models wherein a signal proportional to the average RMS value of buffet data is produced for subsequent recording. Feedback means are employed to suppress the D.C. portion of signals developed by the strain gages during dynamic testing. Automatic recording of gain settings of amplifiers employed in the circuit is also provided.
According to one embodiment, a cross-correlator comprises a plurality of analog front ends (AFEs), a cross-correlation circuit and a data serializer. Each of the AFEs comprises a variable gain amplifier (VGA) and a corresponding analog-to-digital converter (ADC) in which the VGA receives and modifies a unique analog signal associates with a measured analog radio frequency (RF) signal and the ADC produces digital data associated with the modified analog signal. Communicatively coupled to the AFEs, the cross-correlation circuit performs a cross-correlation operation on the digital data produced from different measured analog RF signals. The data serializer is communicatively coupled to the summing and cross-correlating matrix and continuously outputs a prescribed amount of the correlated digital data.
An overview of the NASA NEPP Program Silicon Carbide Power Device subtask is given, including the current task roadmap, partnerships, and future plans. Included are the Agency-wide efforts to promote development of single-event effect hardened SiC power devices for space applications.
No abstract available
This work describes recent progress in the design, processing, upscaling, and testing of 500°C durable two-level interconnect 4H-SiC JFET IC technology undergoing development at NASA Glenn Research Center. For the first time, stable electrical operation of semiconductor ICs for 1 year (8760 hours) at 500°C in air atmosphere is reported. These groundbreaking durability results were attained on two-level interconnect JFET demonstration ICs with 175 or more transistors on each chip. This corresponds to a more than 7-fold increase in 500°C-durable circuit complexity from the 24 transistor ring oscillator ICs reported at HiTEC 2016.
This paper examines mechanisms and models for latchup from protons, as well as charge collection in the underlying substrate region.
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No abstract provided
An apparatus is disclosed that includes a semiconductor device to control a power converter having two or more power FETs. The semiconductor device includes a gate signal generator configured to produce two or more gate signals able to drive the two or more FETs. The gate signal generator has programmable timing configuration parameters to control operation of the two or more gate signals, wherein the timing configuration parameters are digitally programmed via a memory in the semiconductor device. The memory may be implemented with fuses, other non-volatile memory or volatile memory. The parameters may be fixed or updated during a lifetime of the apparatus. A serial-to-parallel conversion may be used to input the parameters. Optimization methods may be performed to determine parameters considered to be optimal. The apparatus may also include the power converter.
Abstract not provided.
The various technologies presented herein relate to measuring a signal generated by a die-based test circuit incorporated into an IC and utilizing the measured signal to authenticate the IC. The signal can be based upon a sensor response generated by the test circuit fabricated into the die, wherein the sensor response is based upon a property of the die material. The signal can be compared with a reference value obtained from one or more test circuit(s) respectively located on one or more reference dies, wherein the reference dies are respectively cut from different wafers, and the location at which the reference dies were cut is known. If the measured signal matches the reference value, the die is deemed to be from the same cut location as the dies from which the reference value was obtained. If the measured signal does not match the reference value, the die is not authenticated.
Abstract not provided.