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At least 433 records · Page 24

Single Longitudinal Mode, High Repetition Rate, Q-switched Ho:YLF Laser for Remote Sensing

Ho:YLF/LuLiF lasers have specific applications for remote sensing such as wind-speed measurement and carbon dioxide (CO2) concentration measurement in the atmosphere because the operating wavelength (around 2 m) is located in the eye-safe range and can be tuned to the characteristic lines of CO2 absorption and there is strong backward scattering signal from aerosol (Mie scattering). Experimentally, a diode pumped Ho:Tm:YLF laser has been successfully used as the transmitter of coherent differential absorption lidar for the measurement of with a repetition rate of 5 Hz and pulse energy of 75 mJ [1]. For highly precise CO2 measurements with coherent detection technique, a laser with high repetition rate is required to averaging out the speckle effect [2]. In addition, laser efficiency is critically important for the air/space borne lidar applications, because of the limited power supply. A diode pumped Ho:Tm:YLF laser is difficult to efficiently operate in high repetition rate due to the large heat loading and up-conversion. However, a Tm:fiber laser pumped Ho:YLF laser with low heat loading can be operated at high repetition rates efficiently [3]. No matter whether wind-speed or carbon dioxide (CO2) concentration measurement is the goal, a Ho:YLF/LuLiF laser as the transmitter should operate in a single longitudinal mode. Injection seeding is a valid technique for a Q-switched laser to obtain single longitudinal mode operation. In this paper, we will report the new results for a single longitudinal mode, high repetition rate, Q-switched Ho:YLF laser. In order to avoid spectral hole burning and make injection seeding easier, a four mirror ring cavity is designed for single longitudinal mode, high repetition rate Q-switched Ho:YLF laser. The ramp-fire technique is chosen for injection seeding.

Bai, Yingxin↗

Electrical and thermal characteristics of LaB6 thermionic hollow cathodes operating in He, D2, Ar, and Xe at 4–200 Pa and 0.25–5 A cm−2

We report characteristics of lanthanum hexaboride (LaB6) cathodes for conditions relevant to a high-voltage, high-current switching device. LaB6 is selected because of its relatively low work function, stability in the presence of many common gas impurities, and a low evaporation rate (long life) at operating temperatures. We have investigated the effect of cathode geometry, gas type, pressure, and current on a LaB6 hollow cathode in a diode configuration with an opposing planar anode. The gas is stagnant at a relatively low pressure of 4–200 Pa (0.03–1.5 Torr) because of device high-voltage standoff requirements. In all cases, the plasma voltage decreases to a plateau value with increasing current where a practical device would operate. The plateau voltage aligns with the fill gas excitation or ionization voltage, depending on conditions. At high current, the cathode temperature exceeds that required for thermionic emission to supply the total current, a behavior that is understood by accounting for back-diffusing bulk electrons.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Reverse-Bias Resilience of Monolithic Perovskite/Silicon Tandem Solar Cells

Metal halide perovskites have rapidly enabled a range of high-performance photovoltaic technologies. However, catastrophic failure under reverse voltage bias hinders their commercialization. In this work, we demonstrate that by employing a monolithic perovskite/silicon tandem structure, the perovskite subcell can be effectively protected by the silicon subcell under reverse bias, owing to the low reverse-bias diode current of the silicon subcell. As a result, the tested perovskite/silicon tandem devices show superior reverse-bias resilience compared to perovskite single-junction devices in both long-term reverse voltage biasing tests at the single-cell level and partial shading tests at the module level. These results highlight that, compared to other perovskite technologies, monolithic perovskite/silicon tandems are at a higher technology readiness level in terms of tackling the reverse-bias and partial shading challenge, which is a considerable advantage towards commercialization.

commercialization↗

Rapid Demonstration of Bremsstrahlung Diode Optimization

Optimization of the radiation pattern from a Bremsstrahlung target for a given application is possible by controlling the electron beam that impacts the high-atomic-number target. In this work, the electron beam is generated by a 13MV vacuum diode that terminates a coaxial magnetically insulted transmission line (MITL) on the HERMES-III machine at Sandia National Labs. Work by Sanford introduced a geometry for vacuum diodes that can control the flow within bounds. The "indented anode", as coined by Sanford, can straighten out the electron beam in a high-current diode that would otherwise be prone to beam pinching. A straighter beam will produce a more forwardly directed radiation pattern while a pinching electron beam will yield a focal point or hot spot on axis and a more diffuse radiation pattern. Either one of these may be desirable depending on the application. This work serves as a first attempt to optimize the radiation pattern in the former sense of collimating the radiation pattern given a limited parameter space. The optimization is attempted first using electromagnetic particle-in-cell simulations in the EMPIRE code suite. The setup of the models used in EMPIRE is discussed along with some basic theory behind some of the models used in the simulations such as anode heating and secondary ions. Theoretical work performed by Allen Garner and his students at Purdue is included here, which concerns the impact of collisions in these vacuum diodes. The EMPIRE simulations consider both an aggressive and a conservative design. The aggressive design is inherently riskier while the conservative design is chosen as something that, while still a risk, is more likely to perform as expected. The ultimate goal of this work was to validate the EMPIRE code results with experimental data. While the experiment that tested the diode designs proposed by the simulation results fell outside of the fiscal boundaries of this project (and for that reason the results of which are not included in this report), the hardware for the experiment was designed and drafted within those same fiscal boundaries, and is thus included in this report. However, there was yet another experiment performed in this project that tested a key feature of the diode: the hemispherical cathode. Those results are documented here as well, which show that the cathode tip is an important aspect to controlling the diode flow. A short series of simulations on this diode were also performed after the experiment in order to gain a better understanding of the effect of ions. on the flow pattern and faceplate dose profile.

43 PARTICLE ACCELERATORS↗

A survey of beam-combining technologies for laser space power transmission

The combination of laser beams holds much promise for obtaining powerful beams. Methods are surveyed for beam combination (coherent and incoherent) and two of them are identified as the most effective means for achieving high power transmission in space. The two methods as applied to laser diode arrays are analyzed, and potentially productive work areas for the advancement of technology are delineated.

Kwon, J. H.↗

Computational Fermi Level Engineering and Doping-Type Conversion of Ga2O3 Via Three-Step Processing

Ga2O3 is being actively explored for power electronics, deep-ultraviolet optoelectronics, and other applications due to its ultra-wide bandgap and low projected fabrication cost of large-size and high-quality crystals. N-type doping of Ga2O3 can be achieved and tuned, but p-type doping faces fundamental obstacles due to deep character of acceptor levels and polaron transport of resulting holes. However, successful engineering of Ga2O3 based devices requires critical control of doping density, Fermi level position, and free carrier concentration, providing opportunities for predictive process simulation. We use first-principles defect theory and defect equilibrium calculations to simulate a 3-step growth-annealing-quench protocol for hydrogen assisted Mg doping in Ga2O3, taking into account the hydrogen-oxygen-water gas phase equilibrium. We predict type conversion to a net p-type regime following O-rich annealing after growth under reducing conditions in the presence of H2. This process is similar to the Mg acceptor activation by H removal in GaN. We show that there is an optimal temperature that maximizes the net acceptor density during the equilibrium annealing step for a given Mg doping level. Quenching of non-equilibrium annealed samples then results in a Fermi level EF below mid-gap down to about EV +1.5 eV, creating a significant number of uncompensated neutral MgGa0 acceptors. The resulting free hole concentration in quenched samples is very low (109 – 1012 cm-3) due to deep energy level of these Mg acceptors, but this type converted Ga2O3 material can create a significant built-in field in a p-n junction with an adjoining n-type material. Additionally, the electron concentration is greatly suppressed in such acceptor-doped Ga2O3, which could enable the use as a current blocking layer to fabricate normally-off (enhancement-mode) vertical Ga2O3 based metal-oxide-semiconductor field effect transistors (MOSFETs), and as a guard ring for edge termination in MOSFETs and Schottky barrier diodes (SBDs) with increased breakdown voltage.

CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS,M↗

Damping Relaxation Oscillations in Laser Diodes

Proposed semiconductor laser modulated at frequencies up to near its resonant frequency more efficiently than older devices. New laser uses two different effective carrier lifetimes: one for dc and lowfrequency operation and another for operation near resonant frequency. Laser part of bipolar transistor with capacitor that serves as ac short circuit.

Katz, J.↗

Carrier capture and emission by substitutional carbon impurities in GaN vertical diodes

A model was developed for the operation of a GaN pn junction vertical diode which includes rate equations for carrier capture and thermally activated emission by substitutional carbon impurities and carrier generation by ionizing radiation. The model was used to simulate the effect of ionizing radiation on the charge state of carbon. These simulations predict that with no applied bias, carbon is negatively charged in the n-doped layer, thereby compensating n-doping as experimentally observed in diodes grown by metal-organic chemical vapor deposition. With reverse bias, carbon remains negative in the depletion region, i.e., compensation persists in the absence of ionization but is neutralized by exposure to ionizing radiation. This increases charge density in the depletion region, decreases the depletion width, and increases the capacitance. The predicted increase in capacitance was experimentally observed using a pulsed 70 keV electron beam as the source of ionization. In additional confirming experiments, the carbon charge-state conversion was accomplished by photoionization using sub-bandgap light or by the capture of holes under forward bias.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

LED Lighting and Plant Growth: Supplemental LED Effects on Development

The growth of plants aboard the International Space Station (ISS) will play a pivotal role in advancing human space exploration to further uncharted destinations. Not only will plants be useful for oxygen production and carbon dioxide reduction, they will also serve as a supplemental food source for the astronaut diet. Research indicates that the most efficient way for these crops to be grown is by using electric lighting – specifically light-emitting diodes (LED) due to their several unique advantages. One of these advantages includes the potential for selecting certain wavelengths. By isolating certain lights, the effects of specific wavelengths on plant growth can be made clearer. This research project examined plant morphology, chlorophyll, biomass production, and nutrient synthesis in ‘Outredgeous’ red romaine lettuce grown under six LED light treatments of white (W), W + blue (B), W + green (G), W + red (R), W + far red (FR), and a Heliospectra lamp (Helio) (-composed of B+G+R+FR LEDs without W LEDS-). It was consistently found that the lettuce grown under the Helio, W + FR, W + R, and W + G treatments all showed improved physiology in terms of shoot length, shoot diameter, fresh mass, and dry mass relative to the W control. The Helio, W + FR, and W + G treatments exhibited significantly larger leaf areas while the Helio and W + FR treatments also produced more leaves on average at 28 days after planting (DAP). The W (control) and W + B treatments showed the highest accumulation of chlorophyll at 28 DAP. In conclusion, lettuce grown under the Helio treatment may be the overall most beneficial for supplementing the astronaut diet in terms of total edible biomass produced in a 28 day crop cycle.

LED↗

On the Long-Term Stability of Microwave Radiometers Using Noise Diodes for Calibration

Results are presented from the long-term monitoring and calibration of the National Aeronautics and Space Administration Jason Microwave Radiometer (JMR) on the Jason-1 ocean altimetry satellite and the ground-based Advanced Water Vapor Radiometers (AWVRs) developed for the Cassini Gravity Wave Experiment. Both radiometers retrieve the wet tropospheric path delay (PD) of the atmosphere and use internal noise diodes (NDs) for gain calibration. The JMR is the first radiometer to be flown in space that uses NDs for calibration. External calibration techniques are used to derive a time series of ND brightness for both instruments that is greater than four years. For the JMR, an optimal estimator is used to find the set of calibration coefficients that minimize the root-mean-square difference between the JMR brightness temperatures and the on-Earth hot and cold references. For the AWVR, continuous tip curves are used to derive the ND brightness. For the JMR and AWVR, both of which contain three redundant NDs per channel, it was observed that some NDs were very stable, whereas others experienced jumps and drifts in their effective brightness. Over the four-year time period, the ND stability ranged from 0.2% to 3% among the diodes for both instruments. The presented recalibration methodology demonstrates that long-term calibration stability can be achieved with frequent recalibration of the diodes using external calibration techniques. The JMR PD drift compared to ground truth over the four years since the launch was reduced from 3.9 to - 0.01 mm/year with the recalibrated ND time series. The JMR brightness temperature calibration stability is estimated to be 0.25 K over ten days.

noise diode (ND)↗

Space charge trap-assisted recombination suppressing layer for low-voltage diode operation

Shockley-Read-Hall (SRH) generation and/or recombination in heterojunction devices is suppressed by unconventional doping at or near the heterointerface. The effect of this doping is to shift SRH generation and/or recombination preferentially into the wider band gap material of the heterojunction. This reduces total SRH generation and/or recombination in the device by decreasing the intrinsic carrier concentration ni at locations where most of the SRH generation and/or recombination occurs. The physical basis for this effect is that the SRH generation and/or recombination rate tends to decrease as ni around the depletion region decreases, so decreasing the effective ni in this manner is a way to decrease SRH recombination.

Santhanam, Parthiban↗

Solar cell array design handbook, volume 1

Twelve chapters discuss the following: historical developments, the environment and its effects, solar cells, solar cell filters and covers, solar cell and other electrical interconnections, blocking and shunt diodes, substrates and deployment mechanisms, material properties, design synthesis and optimization, design analysis, procurement, production and cost aspects, evaluation and test, orbital performance, and illustrative design examples. A comprehensive index permits rapid locating of desired topics. The handbook consists of two volumes: Volume 1 is of an expository nature while Volume 2 contains detailed design data in an appendix-like fashion. Volume 2 includes solar cell performance data, applicable unit conversion factors and physical constants, and mechanical, electrical, thermal optical, magnetic, and outgassing material properties. Extensive references are provided.

Rauschenbach, H. S.↗

PIN photodiodes irradiated with 40- and 85-MeV protons

PIN photodiodes were bombarded with 40- and 85-MeV protons to a fluence of 1.5 x 10 to the 11th p/sq cm, and the resulting change in spectral response in the near infrared was determined. The photocurrent, dark current, and pulse amplitude were measured as a function of proton fluence. Changes in these three measured properties are discussed in terms of changes in the diode's spectral response, minority carrier diffusion length, and depletion width. A simple model of induced radiation effects is presented which is in good agreement with the experimental results. The model assumes that incident protons produce charged defects within the depletion region simulating donor type impurities.

Reft, C. S.↗

Atmospheric transmission coefficients for laser pulses with spectral widths of a few tenths of a nanometer over the wavelength region from 800 to 860 nanometers

Effective atmospheric transmission spectra were calculated from 800 to 860 nanometers for laser sources with spectral widths of a few tenths of a nanometer. In this spectral region, the atmospheric absorption lines (water lines) have linewidths of a few hundredths of a nanometer, so that the transmission coefficient for a relatively wide laser pulse must be computed by taking a weighted average over the pulse spectral width. Laser spectral widths of several tenths of a nanometer are shown to reduce the effective absorption by water lines to as little as 10 to 20 percent, even when the laser is centered on a line or overlaps several lines. Thus, the effect of absorption by atmospheric water lines may be greatly reduced for laser communication systems using laser diode array transmitters, for which the pulse spectral width may be a few tenths of a nanometer.

Safren, H. G.↗

A heat-driven monochromatic light source

The efficiency with which heat may be converted into resonance radiation in a cesium thermionic diode is investigated theoretically. An analytical model of a thermionic converter is used which combines the coupled effects of line radiation transport, excited-state kinetics, and plasma diffusion. Operating regimes are established for various degrees of optical density in the plasma. The results indicate that monochromatic radiation can be produced with efficiencies on the order of 30 percent, provided that there is an adequate voltage drop across the plasma. A drop of 1 V was used since it can be maintained without any electrical power input to the device. It is found that high efficiencies are ude to the higher interelectrode distances which the solutions accommodate, and that radiation can be generated efficiently, even with optically dense gases.

Stefani, Francis↗

Lunar Seismic Detector to Advance the Search for Strange Quark Matter

Detection of small seismic signals on the Moon are needed to study lunar internal structure and to detect possible signals from Strange Quark m&er transit events. The immediate objective is to create a prototype seismic detector using a tunnel diode oscillator with a variable capacitor attached to a proof mass. The device is designed to operate effectively on the Moon, which requires a low power consumption to operate through lunar night, while preserving sensitivity. The goal is capacitance resolution of better than 1 part in 10' and power consumption of less than 1 watt.

Galitzki, Nicholas B.↗

Effect of localized polycrystalline silicon properties on solar cell performance

Several forms of polycrystalline silicon, mostly from cast ingots, (including UCP, SILSO and HEM) were studied. On typical slices, localized properties were studied in two ways. Small area (about 2.5 sq mm) mesa diodes were formed, and localized photovoltaic properties were measured. Also a small area (about .015 sq mm) light spot was scanned across the cells; the light spot response was calibrated to measure local diffusion length directly. Using these methods, the effects of grain boundaries, or of intragrain imperfections were correlated with cell performance. Except for the fine grain portion of SILSO, grain boundaries played only a secondary role in determining cell performance. The major factor was intra-grain material quality and it varied with position in ingots and probably related to solidification procedure.

Leung, D.↗