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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 433 records · Page 24
All sourcesNASA NTRSDOE OSTI
NASA NTRS1992

A dynamic study of fragmentation and energy loss during high velocity impact

Research conducted under this contract can be divided into two main areas: hypervelocity (in the range up to 7 km/s) and high velocity (less than 1 km/s). Work in the former was performed at NASA-MSFC using the Light Gas Gun Facility. The lower velocity studies were conducted at Auburn University using the ballistic gun. The emphasis of the project was on the hypervelocity phenomenon especially in the characterization of the debris cloud formed by the primary impact events. Special devices were made to determine the angular distributions of momentum and energy of the debris cloud as a function of impact conditions. After several iteration processes, it was decided to concentrate on the momentum effort. Prototype devices were designed, fabricated, and tested. These devices were based on the conservation of momentum. Distributions of the debris cloud formed were measured by determining the amount of momentum transferred from the debris cloud to strategically placed pendulum measurement devices. The motion of the pendula was monitored using itegrated opto-interrupters. The distribution of momentum in the debris cloud was found to be a strong function of the impact condition. Small projectiles at high velocities were observed to produce finely dispersed debris whereas large projectiles generated discrete particles in the debris. Results also show that the momentum in the forward direction was enhanced due to the impact. This phenomenon of momentum multiplication was also observed in other studies and in computer simulations. It was initially planned to determine the energy distribution using deformation energy in a rod with strain gauges. Results from preliminary studies show that this technique is acceptable but too tedious. A new technique was explored based on measuring the heating effect of the debris cloud using an IR camera. The feasibility and sensitivity was established at Auburn University. This type of energy distribution measurement method can easily be adapted to the gas gun facility at MSFC. The objective of the lower velocity studies at Auburn was to simulate the damage produced in advanced materials by the lower energy debris cloud.

Zee, Ralph H.↗
NASA NTRS1979

The 2.2 GHz Surface Acoustic Wave (SAW) oscillator development Ku-band frequency source development

Two 2.2 GHz SAW oscillators using aluminum nitride on sapphire (AlN/Al2O3) delay lines were fabricated. The oscillators were electronically temperature compensated and characterized. One of the oscillators was used as the frequency reference for the Ku band source; the second oscillator is available for continued evaluation. A 15 GHz frequency source was designed and fabricated. The 15 GHz source consists of a Ku band FET oscillator which is phase locked to the frequency multiplied (X7) output of the 2.2 GHz SAW reference source. The Ku band source was built using microstrip circuit designs, which are hybrid compatible. Two wafer runs of 2.2 GHz TED devices were fabricated and evaluated. The devices were mounted on microstrip test substrates and evaluated as 15 GHz divide by 7 circuits. The device evaluation indicated that in their present form the TED is not a practical circuit element.

Source record↗
NASA NTRS2007

Mo/Ti Diffusion Bonding for Making Thermoelectric Devices

An all-solid-state diffusion bonding process that exploits the eutectoid reaction between molybdenum and titanium has been developed for use in fabricating thermoelectric devices based on skutterudite compounds. In essence, the process is one of heating a flat piece of pure titanium in contact with a flat piece of pure molybdenum to a temperature of about 700 C while pushing the pieces together with a slight pressure [a few psi (of the order of 10 kPa)]. The process exploits the energy of mixing of these two metals to form a strong bond between them. These two metals were selected partly because the bonds formed between them are free of brittle intermetallic phases and are mechanically and chemically stable at high temperatures. The process is a solution of the problem of bonding hot-side metallic interconnections (denoted hot shoes in thermoelectric jargon) to titanium-terminated skutterudite n and p legs during the course of fabrication of a unicouple, which is the basic unit cell of a thermoelectric device (see figure). The hot-side operating temperature required for a skutterudite thermoelectric device is 700 C. This temperature precludes the use of brazing to attach the hot shoe; because brazing compounds melt at lower temperatures, the hot shoe would become detached during operation. Moreover, the decomposition temperature of one of the skutterudite compounds is 762 C; this places an upper limit on the temperature used in bonding the hot shoe. Molybdenum was selected as the interconnection metal because the eutectoid reaction between it and the titanium at the ends of the p and n legs has characteristics that are well suited for this application. In addition to being suitable for use in the present bonding process, molybdenum has high electrical and thermal conductivity and excellent thermal stability - characteristics that are desired for hot shoes of thermoelectric devices. The process takes advantage of the chemical potential energy of mixing between molybdenum and titanium. These metals have a strong affinity for each other. They are almost completely soluble in each other and remain in the solid state at temperatures above the eutectoid temperature of 695 C. As a result, bonds formed by interdiffusion of molybdenum and titanium are mechanically stable at and well above the original bonding temperature of about 700 C. Inasmuch as the bonds are made at approximately the operating temperature, thermomechanical stresses associated with differences in thermal expansion are minimized.

Sakamoto, Jeffrey↗
DOE OSTI2019

Colloidal nanoparticle inks for printing functional devices: emerging trends and future prospects

Colloidal nanoparticles have been widely studied and proven to have unique and superior properties compared to their bulk form and are attractive building blocks for diverse technologies, including energy conversion and storage, sensing, electronics, etc. However, transforming colloidal nanoparticles into functional devices while translating their unique properties from the nanoscale to the macroscale remains a major challenge. The development of advanced manufacturing methodologies that can convert functional nanomaterials into high-performance devices in a scalable, controllable and affordable manner presents great research opportunities and challenges for the next several decades. One promising approach to fabricate functional devices from nanoscale building blocks is additive manufacturing, such as 2D and 3D printing, owing to their capability of fast prototyping and versatile fabrication. Here, we review recent progress and methodologies for printing functional devices using colloidal nanoparticle inks with an emphasis on 2D nanomaterial-based inks. This review provides a comprehensive overview on four important and interconnected topics, including nanoparticle synthesis, ink formulation, printing methods, and device applications. New research opportunities as well as future directions are also discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2020

CO 2 –Based Dual–Tone Resists for Electron Beam Lithography

The increasing global environmental and energy crisis has urgently motivated the advancement of sustainable materials. Significant effort has been focused on developing new materials to replace the fossil-based resists in the semiconductor industry based on greener sources such as ice, dry ice, small organic molecules, and proteins. Such resist materials, however, have yet to meet the stringent requirements of high sensitivity, high resolution, reliable repeatability, and good compatibility with the current protocols. To this end, CO 2 -based polycarbonates (CO 2 -PCs) obtained from the copolymerization of CO 2 and epoxides are demonstrated as sustainable dual-tone (positive & negative tone) resists for electron beam lithography. By adjusting the chemical structure, developing agent, and molecular weight, the CO 2 -PCs present high sensitivities to electron beam (1.3/120 μC cm -2 ), narrow critical dimensions (29/58 nm), and moderate line edge roughness (4.6/26.7 nm) for negative and positive resists, respectively. Here, a deep understanding of the exposure mechanism of CO 2 -PC resists is provided on the basis of the Fourier transform infrared, Raman, and electron ionization mass spectroscopy. 2D photonic crystal devices are fabricated using the negative and positive CO 2 -PC resists, respectively, and both devices show distinct colors derived from their well-defined nanostructures, indicating the great practical potential of CO 2 -derived electron beam resists.

nanofabrication↗
DOE OSTI2021

Demonstration of a Three-Dimensionally Structured Betavoltaic

In this work, we present a demonstration of a high-aspect ratio, three-dimensionally structured betavoltaic device. High-aspect ratio silicon PIN diodes were used as the semiconductor absorber and 147 PmCl 3 was used as the beta emitter. Three devices were fabricated with 147 Pm activities of 2.4 mCi, 7.4 mCi, and 29.5 mCi. The device with the highest activity produced an initial power output of 200 nW and was monitored over a period of 8 months to observe the current–voltage behavior over time, during which time the output current decreased in accordance with the radioactive half-life of 147 Pm. Small deviations in the output current of a few percent during the long-term measurement were found to be attributable to the humidity in the room where the experiment was done. Furthermore, the output current generated from the devices was 68–77% of the theoretical maximum, indicating significant infiltration of the radioisotope into the ridged structures.

42 ENGINEERING↗
DOE OSTI2022

Topology-empowered membrane devices for terahertz photonics

Control of terahertz waves offers a profound platform for next-generation sensing, imaging, and information communications. However, all conventional terahertz components and systems suffer from bulky design, sensitivity to imperfections, and transmission loss. We propose and experimentally demonstrate on-chip integration and miniaturization of topological devices, which may address many existing drawbacks of the terahertz technology. We design and fabricate topological devices based on valley-Hall photonic structures that can be employed for various integrated components of on-chip terahertz systems. We demonstrate valley-locked asymmetric energy flow and mode conversion with topological waveguide, multiport couplers, wave division, and whispering gallery mode resonators. Our devices are based on topological membrane metasurfaces, which are of great importance for developing on-chip photonics and bring many features into terahertz technology.

47 OTHER INSTRUMENTATION↗
NASA NTRS1975

Analytical and experimental evaluation of techniques for the fabrication of thermoplastic hologram storage devices

The results of an experimental investigation on recording information on thermoplastic are given. A description was given of a typical fabrication configuration, the recording sequence, and the samples which were examined. There are basically three configurations which can be used for the recording of information on thermoplastic. The most popular technique uses corona which furnishes free charge. The necessary energy for deformation is derived from a charge layer atop the thermoplastic. The other two techniques simply use a dc potential in place of the corona for deformation energy.

Rogers, J. W.↗
NASA NTRS1988

Electro optical performance of an improved deformable mirror device

The design, fabrication, and performance of an improved 128 x 128 deformable mirror device (DMD) are discussed. The present DMD consists of a monolithically formed array of cantilever beams which are electrostatically deflected by an underlying MOS transistor address matrix. In contrast to an earlier version, the improved DMD on-chip address circuitry supports a single video input to the chip, with all demux operations performed on-chip. The cantilever beams are formed by two layers of high-reflectivity aluminum alloy. The dynamic range of the DMD in the Fourier plane at the Nyquist frequency has been determined at greater than 45 dB.

Wu, Wen R.↗
DOE OSTI2024

Integration of semiconductor membranes with piezoelectric substrates

Piezoelectrically actuated devices constructed from thin semiconductor membranes bonded directly to piezoelectric substrates are provided. Methods for fabricating these devices are also provided. The bonding of the semiconductor to the piezoelectric material does not require the use of any intermediate layers, such as bonding agents.

Lagally, Max G.↗
NASA NTRS1979

Design, fabrication, and delivery of a charge injection device as a stellar tracking device

Six 128 x 128 CID imagers fabricated on bulk silicon and with thin polysilicon upper-level electrodes were tested in a star tracking mode. Noise and spectral response were measured as a function of temperature over the range of +25 C to -40 C. Noise at 0 C and below was less than 40 rms carriers/pixel for all devices at an effective noise bandwidth of 150 Hz. Quantum yield for all devices averaged 40% from 0.4 to 1.0 microns with no measurable temperature dependence. Extrapolating from these performance parameters to those of a large (400 x 400) array and accounting for design and processing improvements, indicates that the larger array would show a further improvement in noise performance -- on the order of 25 carriers. A preliminary evaluation of the projected performance of the 400 x 400 array and a representative set of star sensor requirements indicates that the CID has excellent potential as a stellar tracking device.

Burke, H. K.↗
NASA NTRS1975

Semiconductor diode laser material and devices with emission in visible region of the spectrum

Two alloy systems, (AlGa)As and (InGa)P, were studied for their properties relevant to obtaining laser diode operation in the visible region of the spectrum. (AlGa)As was prepared by liquid-phase epitaxy (LPE) and (InGa)P was prepared both by vapor-phase epitaxy and by liquid-phase epitaxy. Various schemes for LPE growth were applied to (InGa)P, one of which was found to be capable of producing device material. All the InGaP device work was done using vapor-phase epitaxy. The most successful devices were fabricated in (AlGa)As using heterojunction structures. At room temperature, the large optical cavity design yielded devices lasing in the red (7000 A). Because of the relatively high threshold due to the basic band structure limitation in this alloy, practical laser diode operation is presently limited to about 7300 A. At liquid-nitrogen temperature, practical continuous-wave operation was obtained at a wavelength of 6500 to 6600 A, with power emission in excess of 50 mW. The lowest pulsed lasing wavelength is 6280 A. At 223 K, lasing was obtained at 6770 A, but with high threshold currents. The work dealing with CW operation at room temperature was successful with practical operation having been achieved to about 7800 A.

Ladany, I.↗
NASA NTRS1996

AlGaN Channel Transistors for Power Management and Distribution

Contained within is the Final report of a Phase 1 SBIR program to develop AlGaN channel junction field effect transistors (JFET). The report summarizes our work to design, deposit, and fabricate JFETS using molecular beam epitaxy growth AlGaN. Nitride growth is described using a RF atomic nitrogen plasma source. Processing steps needed to fabricate the device such as ohmic source-drain contacts, reactive ion etching, gate formation, and air bride fabrication are documented. SEM photographs of fabricated power FETS are shown. Recommendations are made to continue the effort in a Phase 2 Program.

ENERGY MANAGEMENT↗
DOE OSTI2025

Direct integration of atomic precision advanced manufacturing into middle-of-line silicon fabrication

Atomic precision advanced manufacturing (APAM) dopes silicon with enough carriers to change its electronic structure and can be used to create novel devices by defining metallic regions whose boundaries have single-atom abruptness. Incompatibility with the thermal and lithography process requirements for gated silicon transistor manufacturing have inhibited exploration of both how APAM can enhance CMOS performance and how transistor manufacturing steps can accelerate the discovery of new APAM device concepts. In this work, we introduce an APAM process that enables direct integration into the middle of a transistor manufacturing workflow. We show that a process that combines sputtering and annealing with a hardmask preserves a defining characteristic of APAM, a doping density far in excess of the solid solubility limit, while trading another, the atomic precision, for compatibility with manufacturing. The electrical characteristics of a chip combining a transistor with an APAM resistor show that the APAM module has only affected the transistor through the addition of a resistance and not by altering the transistor. This proof-of-concept demonstration also outlines the requirements and limitations of a unified APAM tool, which could be introduced into manufacturing environments, greatly expanding access to this technology and inspiring a new generation of devices with it.

Chemical vapor deposition↗
DOE OSTI2022

GaN HEMT Fabrication for Radiation-Hardened Sensing and Communications Electronics

Gallium nitride (GaN), a wide bandgap semiconductor, has vast potential to address two environment conditions associated with the application of electronics to nuclear power: elevated temperatures, and high levels of radiation. A process was developed at The Ohio State University (OSU) to enable fabrication of complex digital and analog electronics circuits for application to nuclear power environments such as locations near or in the reactor core or in spent nuclear fuel casks. Radio frequency (RF)-grade GaN high electron mobility transistor (HEMT) devices were fabricated as part of this process. These were fabricated as depletion mode and enhancement mode devices. They have been electrically characterized and have demonstrated the expected performance. Behavioral models (Verilog-A) were developed from these device measurements to enable electrical simulation of GaN HEMT devices and circuits using common electronics simulation tools based on Simulation Program with Integrated Circuit Emphasis (SPICE). A similar set of GaN HEMT devices is being developed to provide lower speed devices for logic and analog functions. These accomplishments position this technology for effective application to sensor interfacing, signal processing, and data communications in nuclear power plants, including operation in or near the reactor core.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
NASA NTRS1998

Analysis of a Memory Device Failure

The recent failure of a vintage memory device presented a unique challenge to failure analysts. Normally device layouts, fabrication parameters and other technical information were available to assist the analyst in the analysis. However, this device was out of production for many years and the manufacturer was no longer in business, so the information was not available. To further complicate this analysis, the package leads were all but removed making additional electrical testing difficult. Under these conditions, new and innovative methods were used to analyze the failure. The external visual exam, radiography, PIND, and leak testing were performed with nominal results. Since electrical testing was precluded by the short lead lengths, the device was delidded to expose the internal structures for microscopic examination. No failure mechanism was identified. The available electrical data suggested an ESD or low level EOS type mechanism which left no visible surface damage. Due to parallel electrical paths, electrical probing on the chip failed to locate the failure site. Two non-destructive Scanning Electron Microscopy techniques, CIVA (Charge Induced Voltage Alteration) and EBIC (Electron Beam Induced Current), and a liquid crystal decoration technique which detects localized heating were employed to aid in the analysis. CIVA and EBIC isolated two faults in the input circuitry, and the liquid crystal technique further localized two hot spots in regions on two input gates. Removal of the glassivation and metallization revealed multiple failure sites located in the gate oxide of two input transistors suggesting machine (testing) induced damage.

Nicolas, David P.↗