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At least 433 records · Page 24

All sources NASA NTRS DOE OSTI

NASA NTRS1992

The 10 kW power electronics for hydrogen arcjets

A combination of emerging mission considerations such as 'launch on schedule', resource limitations, and the development of higher power spacecraft busses has resulted in renewed interest in high power hydrogen arcjet systems with specific impulses greater than 1000 s for Earth-space orbit transfer and maneuver applications. Solar electric propulsion systems with about 10 kW of power appear to offer payload benefits at acceptable trip times. This work outlines the design and development of 10 kW hydrogen arcjet power electronics and results of arcjet integration testing. The power electronics incorporated a full bridge switching topology similar to that employed in state of the art 5 kW power electronics, and the output filter included an output current averaging inductor with an integral pulse generation winding for arcjet ignition. Phase shifted, pulse width modulation with current mode control was used to regulate the current delivered to arcjet, and a low inductance power stage minimized switching transients. Hybrid power Metal Oxide Semiconductor Field Effect Transistors were used to minimize conduction losses. Switching losses were minimized using a fast response, optically isolated, totem-pole gate drive circuit. The input bus voltage for the unit was 150 V, with a maximum output voltage of 225 V. The switching frequency of 20 kHz was a compromise between mass savings and higher efficiency. Power conversion efficiencies in excess of 0.94 were demonstrated, along with steady state load current regulation of 1 percent. The power electronics were successfully integrated with a 10 kW laboratory hydrogen arcjet, and reliable, nondestructive starts and transitions to steady state operation were demonstrated. The estimated specific mass for a flight packaged unit was 2 kg/kW.

Hamley, John A.↗

NASA NTRS1985

Nuclear Science Symposium, 31st and Symposium on Nuclear Power Systems, 16th, Orlando, FL, October 31-November 2, 1984, Proceedings

Topics related to physics instrumentation are discussed, taking into account cryostat and electronic development associated with multidetector spectrometer systems, the influence of materials and counting-rate effects on He-3 neutron spectrometry, a data acquisition system for time-resolved muscle experiments, and a sensitive null detector for precise measurements of integral linearity. Other subjects explored are concerned with space instrumentation, computer applications, detectors, instrumentation for high energy physics, instrumentation for nuclear medicine, environmental monitoring and health physics instrumentation, nuclear safeguards and reactor instrumentation, and a 1984 symposium on nuclear power systems. Attention is given to the application of multiprocessors to scientific problems, a large-scale computer facility for computational aerodynamics, a single-board 32-bit computer for the Fastbus, the integration of detector arrays and readout electronics on a single chip, and three-dimensional Monte Carlo simulation of the electron avalanche in a proportional counter.

Biggerstaff, J. A.↗

NASA NTRSDate not supplied

Pt/HTCC Alumina based Electronic Packaging System and Integration Processes for High Temperature Harsh Environment Applications

Electronic devices capable of operation at 500°C are required for long term Venus surface missions, as well as for in situ monitoring and control of next generation aeronautical engines. High temperature sensors and electronics can also find many applications in military, and energy and automobile industries. Various silicon carbide (SiC) sensors and electronic devices have been developed for operation at 500 °C, and a compatible packaging system is needed for long term test and deployment of these high temperature devices. High temperature co-fired ceramics (HTCC) alumina with platinum (Pt) conductor was proposed for high temperature electronic packaging. A prototype Pt/HTCC alumina packaging system including chip-level package and circuit board has been briefly reported previously for long-term electrical testing of SiC integrated circuits at 500 °C, and brief testing at much higher temperatures. HTCC alumina is an excellent dielectric material with acceptable dielectric constant and low dielectric loss over wide temperature and frequency ranges. Pt is chemically noble and can be co-fired with HTCC alumina in air ambient producing a viable electronic packaging material system for high temperature applications. This paper presents a more detailed description of this packaging system including prototype low power packages and circuit boards based on HTCC alumina and Pt metallization for 500°C and other harsh environment applications. The key technical considerations for chip-level packaging and circuit board assembly, including materials and processes for 500 °C durable wire-bonding and SiC die attach, and integration of multi-chip circuit boards, are presented. Experimental test results of this packaging approach applied to SiC integrated circuits at 500 °C and 700°C are discussed as well.

electronic packaging↗

NASA NTRS1994

Power Electronics Development for the SPT-100 Thruster

Russian electric propulsion technologies have recently become available on the world market. Of significant interest is the Stationary Plasma Thruster (SPT) which has a significant flight heritage in the former Soviet space program. The SPT has performance levels of up to 1600 seconds of specific impulse at a thrust efficiency of 0.50. Studies have shown that this level of performance is well suited for stationkeeping applications, and the SPT-100, with a 1.35 kW input power level, is presently being evaluated for use on Western commercial satellites. Under a program sponsored by the Innovative Science and Technology Division of the Ballistic Missile Defense Organization, a team of U.S. electric propulsion specialists observed the operation of the SPT-100 in Russia. Under this same program, power electronics were developed to operate the SPT-100 to characterize thruster performance and operation in the U.S. The power electronics consisted of a discharge, cathode heater, and pulse igniter power supplies to operate the thruster with manual flow control. A Russian designed matching network was incorporated in the discharge supply to ensure proper operation with the thruster. The cathode heater power supply and igniter were derived from ongoing development projects. No attempts were made to augment thruster electromagnet current in this effort. The power electronics successfully started and operated the SPT-100 thruster in performance tests at NASA Lewis, with minimal oscillations in the discharge current. The efficiency of the main discharge supply was measured at 0.92, and straightforward modifications were identified which could increase the efficiency to 0.94.

Hamley, John A.↗

NASA NTRS2013

Radial Profiles of Plasma Electron Characteristics in a Low-Power Arcjet

Since 1960, the Arc Jet Complex at NASA Ames Research Center has been a source of long-duration, high-enthalpy flow for materials testing with application to the thermal protection of aerospace vehicle components. From their inception the facilities have played an integral role supporting many of NASA's space flight programs and numerous DoD projects. In recent years advancements in computational fluid dynamics (CFO) have made the resultant models a valuable tool for assessing and predicting performance, however, the inherent limitation of models to compensate for a dissociated, transitionally high temperature nonequilibrated flowfield have made further measurements necessary. The use of electrostatic probe diagnostics within similarly harsh plasma environments in previous studies have been met with much success. In this study, the use of a single Langmuir probe was implemented to characterize the plasma parameters of interest as they vary radially within a large volume of the plume. Classical Langmuir probe theory was applied to achieve first order estimates of the heavy particle temperature, the ratio T(sub i)/T(sub e), and the ionization fraction. As expected, both the electron temperature and electron density measurements show a dependence on radial distance from the plume centerline, with electron density profiles showing the largest dependence. This paper aims to validate and strengthen modeling work conducted at the NASA Ames Research Center by measuring the critical plasma parameters (electron temperature, electron density, and plasma potential) within the arc plume of a subscale arc jet. These parameters are intended to give physical insight into the flow characteristics while providing the necessary boundary conditions to validate full scale simulations.

Codron, Douglas↗

DOE OSTI2021

Efficient and Reliable Power Takeoff for Ocean Wave Energy Harvesting

The project goal is to significantly improve the current ocean wave energy harvesting through innovative Power Take-off (PTO) design, advanced power electronics, and novel wave capture structures. The objective of the project is to design and demonstrate system-agnostic components for application across multiple MHK systems, and complete component designs, build scaled prototypes, and perform testing and analysis for metric validation of 25% increase in component rating/per unit cost and 50% reduction in failure rate. The major innovation of the PTO is the Mechanical Motion Rectifier (MMR) mechanism that rectifies the bi-directional oscillatory motion of the input from waves into a steady unidirectional rotation output to directly drive the electrical generator. Through this mechanism, the efficiency and the fatigue life of the PTO can be significantly improved to benefit the energy absorption and lifespan of the wave energy converters (WEC). During the period of performance, the component and system design are completed, the scaled prototypes are developed and performed testing. It is validated that the 25% increase in a component rating/per unit cost. The 50% reduction in failure rate is not directly validated by experiments, however, it can be explained qualitatively with analysis. Besides, 8 journal articles, 13 conference proceedings, 1 patent, 3 Master thesis and two Ph.D. dissertations are published based on the work related to this project. The list of all the publications can be found at the end of the project as an appendix. Over 30 students and postdocs were trained through this project. Three prototypes of 100W and 500W WECs and 10KW PTO were designed, built, and tested in ocean wave tank and using the NREL dynamometer. This project demonstrated 50-80% PTO efficiency, 90-98% power electronics efficiency, up to 66% capture width ratio in irregular waves, and 34% overall efficiency in regular waves.

16 TIDAL AND WAVE POWER↗

NASA NTRSDate not supplied

Pt/HTCC Alumina based Electronic Packaging System and Integration Processes for High Temperature Harsh Environment Applications

High temperature↗

DOE OSTI2021

Doping- and Strain-Dependent Electrolyte-Gate-Induced Perovskite to Brownmillerite Transformation in Epitaxial La 1– x Sr x CoO 3–δ Films

Much recent attention has focused on the voltage-driven reversible topotactic transformation between the ferromagnetic metallic perovskite (P) SrCoO 3-δ and oxygen-vacancy-ordered antiferromagnetic insulating brownmillerite (BM) SrCoO 2.5 . This is emerging as a paradigmatic example of the power of electrochemical gating (using, e.g., ionic liquids/gels), the wide modulation of electronic, magnetic, and optical properties generating clear application potential. SrCoO 3 films are challenging with respect to stability, however, and there has been little exploration of alternate compositions. Here, we present the first study of ion-gel-gating-induced P. BM transformations across almost the entire La 1-x SrxCoO 3 phase diagram (0 ≤ x ≤ 0.70), under both tensile and compressive epitaxial strain. Electronic transport, magnetometry, and operando synchrotron X-ray diffraction establish that voltage-induced P → BM transformations are possible at essentially all x, including x ≤ 0.50, where both P and BM phases are highly stable. Under small compressive strain, the transformation threshold voltage decreases from approximately +2.7 V at x = 0 to negligible at x = 0.70. Both larger compressive strain and tensile strain induce further threshold voltage lowering, particularly at low x. The P → BM threshold voltage is thus tunable, via both composition and strain. At x = 0.50, voltage-controlled ferromagnetism, transport, and optical transmittance are then demonstrated, achieving Curie temperature and resistivity modulations of similar to 220 K and at least 5 orders of magnitude, respectively, and enabling estimation of the voltage-dependent Co valence. The results are analyzed in the context of doping- and strain-dependent oxygen vacancy formation energies and diffusion coefficients, establishing that it is thermodynamic factors, not kinetics, that underpin the decrease in the threshold voltage with x, that is, with increasing formal Co valence. These findings substantially advance the practical and mechanistic understanding of this voltage-driven transformation, with fundamental and technological implications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2025

Optical interferometry of high-energy nanosecond pin-to-pin discharges in atmospheric air

This paper describes the construction and application of an optical-frequency Michelson interferometer for measuring electron number density within high-energy, high-power nanosecond pin-to-pin discharges (>10 mJ pulse energy, >1 MW pulse power). A 21 mJ, 11 ns spark across a 3 mm pin-to-pin electrode gap was analyzed at 7 ns into the discharge to demonstrate the operation of the interferometer. A peak electron density of 2.3 × 10 17 cm −3 was observed at these conditions, and it was consistent with estimates of plasma channel resistance based on V–I measurements. This initial work paves the way for a larger parametric study of the spatial and temporal dynamics of electron number density in nanosecond pin-do-pin discharges under various conditions.

electron number density↗

DOE OSTI2021

2021 Annual Progress Report: Vertical GaN Device Development

This project is part of a multi-lab consortium that leverages U.S. research expertise and facilities at national labs and universities to significantly advance electric drive power density and reliability, while simultaneously reducing cost. The final objective of the consortium is to develop a 100 kW traction drive system that achieves 33 kW/L, has an operational life of 300,000 miles, and a cost of less than 6 dollars/kW. One element of the system is a 100 kW inverter with a power density of 100 kW/L and a cost of 2.7 dollars/kW. New materials such as wide-bandgap semiconductors, soft magnetic materials, and ceramic dielectrics, integrated using multi-objective co-optimization design techniques, will be utilized to achieve these program goals. This project focuses on a subset of the power electronics work within the consortium, specifically the design, fabrication, and evaluation of vertical GaN power devices suitable for automotive applications.

33 ADVANCED PROPULSION SYSTEMS↗

DOE OSTI2022

VTO 2022 Annual Progress Report: Vertical GaN Device Development

This project is part of a multi-lab consortium that leverages U.S. research expertise and facilities at national labs and universities to significantly advance electric drive power density and reliability, while simultaneously reducing cost. The final objective of the consortium is to develop a 100 kW traction drive system that achieves 33 kW/L, has an operational life of 300,000 miles, and a cost of less than $\$$6/kW. One element of the system is a 100 kW inverter with a power density of 100 kW/L and a cost of $\$$2.7/kW. New materials such as wide bandgap semiconductors, soft magnetic materials, and ceramic dielectrics, integrated using multi-objective co optimization design techniques, will be utilized to achieve these program goals. This project focuses on a subset of the power electronics work within the consortium, specifically the design, fabrication, and evaluation of vertical GaN power devices suitable for automotive applications.

33 ADVANCED PROPULSION SYSTEMS↗

NASA NTRS1972

Optical computing.

Applications of the optical computer include an approach for increasing the sharpness of images obtained from the most powerful electron microscopes and fingerprint/credit card identification. The information-handling capability of the various optical computing processes is very great. Modern synthetic-aperture radars scan upward of 100,000 resolvable elements per second. Fields which have assumed major importance on the basis of optical computing principles are optical image deblurring, coherent side-looking synthetic-aperture radar, and correlative pattern recognition. Some examples of the most dramatic image deblurring results are shown.

Stroke, G. W.↗

NASA NTRS1975

Switching regulator emission control circuit for ion sources

An electron emission control circuit of the switching regulator type operating at 100 kHz has been developed which maintains a constant emission current within 0.1% for a cathode power demand variation of approximately 100%. The power output stage has an efficiency of 67%, and the overall efficiency is 45% when driving a thoria-coated iridium cathode having a nominal resistance at operating temperature of 2.5 ohms. Under optimum conditions, the bus power demand is 1.75 W. The circuit is useful in controlling the electron emission current of ion sources in applications which involve a substantial variation of the cathode work function, such as oxygen partial pressure measurements over a large dynamic range.

Clay, F. P., Jr.↗

NASA NTRS1978

Annealing of GaAs solar cells damaged by electron irradiation

Measurements of thermal annealing of GaAlAs/GaAs solar cells damaged by 1 MeV electron irradiation are reported, and the magnitude of the short-circuit current recovery is discussed. The damaged cells are annealed in a vacuum at 200 C. A cell irradiated at 10 to the 13th power electrons per sq cm recovers all its lost short-circuit current after 15 hours of annealing. Possible application of the annealing process to solar cells in space is also considered.

Walker, G. H.↗

NASA NTRS1984

Surface and allied studies in silicon solar cells

Measuring small-signal admittance versus frequency and forward bias voltage together with a new transient measurement apparently provides the most reliable and flexible method available for determining back surface recombination velocity and low-injection lifetime of the quasineutral base region of silicon solar cells. The new transient measurement reported here is called short-circuit-current decay (SCCD). In this method, forward voltage equal to about the open-circuit or the maximum power voltage establishes excess holes and electrons in the junction transition region and in the quasineutral regions. The sudden application of a short circuit causes an exiting of the excess holes and electrons in the transition region within about ten picoseconds. From observing the slope and intercept of the subsequent current decay, the base lifetime and surface recombination velocity can be determined. The admittance measurement previously mentioned then enters to increase accuracy particularly for devices for which the diffusion length exceeds the base thickness.

Lindholm, F. A.↗

NASA NTRS1984

Ferm cathode operation in the test bed ion engine

A rapid start hollow cathode has been developed for high power ion thruster application. Using no low work function insert or heater, the Field Enhanced Refractory Metal (FERM) cathode electron emission occurs from a refractory metal tube concentric with the cathode barrel. Results are presented for FERM cathode operation in the high field strength Test Bed Ion Engine. Using a controlled glow discharge heating technique, cathode start up times of 1-2 secs are shown. Cathode V-I curves up to 35 ampere emission are presented and life limiting component erosion mechanisms, at these high current levels, are discussed.

Aston, G.↗

NASA NTRS1990

Custom electronic subsystems for the laboratory telerobotic manipulator

The National Aeronautics and Space Administration (NASA) Space Station Program presents new opportunities for the application of telerobotic and robotic systems. The Laboratory Telerobotic Manipulator (LTM) is a highly advanced 7 degrees-of-freedom (DOF) telerobotic/robotic manipulator. It was developed and built for the Automation Technology Branch at NASA's Langley Research Center (LaRC) for work in research and to demonstrate ground-based telerobotic manipulator system hardware and software systems for future NASA applications in the hazardous environment of space. The LTM manipulator uses an embedded wiring design with all electronics, motor power, and control and communication cables passing through the pitch-yaw differential joints. This design requires the number of cables passing through the pitch/yaw joint to be kept to a minimum. To eliminate the cables needed to carry each pitch-yaw joint's sensor data to the VME control computers, a custom-embedded electronics package for each manipulator joint was developed. The electronics package collects and sends the joint's sensor data to the VME control computers over a fiber optic cable. The electronics package consist of five individual subsystems: the VME Link Processor, the Joint Processor and the Joint Processor power supply in the joint module, the fiber optics communications system, and the electronics and motor power cabling.

Glassell, R. L.↗

NASA NTRS1991

Development of silicon carbide semiconductor devices for high temperature applications

The semiconducting properties of electronic grade silicon carbide crystals, such as wide energy bandgap, make it particularly attractive for high temperature applications. Applications for high temperature electronic devices include instrumentation for engines under development, engine control and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Discrete prototype SiC devices were fabricated and tested at elevated temperatures. Grown p-n junction diodes demonstrated very good rectification characteristics at 870 K. A depletion-mode metal-oxide-semiconductor field-effect transistor was also successfully fabricated and tested at 770 K. While optimization of SiC fabrication processes remain, it is believed that SiC is an enabling high temperature electronic technology.

Matus, Lawrence G.↗