The potential of thin film versus bulk devices for high temperature applications.
Thin film integrated circuits for high temperature applications, discussing single crystalline dielectrics role
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Thin film integrated circuits for high temperature applications, discussing single crystalline dielectrics role
Effects of preparation techniques on thin film CdS solar cells
Thin film thermistors heat-separated from graphite substrate to achieve positive temperature resistance coefficient via argon heating and oxygen cooling
Interference pattern fringe for measuring thin films on metal
Superconducting properties of Nb-Ti-N thin films prepared by reactive sputtering process, obtaining transition temperature maximums
Superconducting thin films of beta-tungsten structure Nb-Al-Ge compound, discussing high purity sputtering preparation techniques and properties in magnetic fields
Pulse rise time effect on nanosecond magnetic thin film switching with flux reversal and stray field interaction
The deposition of semiconducting and insulating thin films at low temperatures using microwave technology was explored. The method of plasma formations, selection of a power source, the design of the microwave plasma cavity, the microwave circuitry, impedance matching, plasma diagnostics, the deposition chamber and the vacuum system were studied.
A number of samples of optical thin film materials were flown on Shuttle flight STS-8 as part of an experiment to evaluate their interaction with residual atomic oxygen in low earth orbit. Osmium was selected because of its usefulness as a reflective optical coating for far-UV instruments and for confirmation of results from previous Shuttle flights in which such coatings disappeared. Reflectance data and photographic evidence are presented to support the hypothesis that the osmium disappearance is due to reaction with oxygen to form a volatile oxide. Platinum and iridium, which were included for comparison, fared much better.
The surface resistance of niobium nitride (NBN) thin films was measured at 7.78 and 10.14 GHz in the temperature range of 1.5 to 4.2 K. The films were reactively sputtered on sapphire substrates to a thickness of approximately 1 micron. The surface resistance was determined by measuring the quality factor (Q) of the TE sub 011 mode of a lead-plated copper cavity where the NbN served as one end-cap of the cavity.
Thin-film thermocouples (TFTCs) were developed for aircraft gas turbine engines and are in use for temperature measurement on turbine blades up to 1800 F. Established aircraft engine gas turbine technology is currently being adapted to turbine engine blade materials and the environment encountered in the Space Shuttle Main Engine (SSME)-severe thermal shock from cryogenic fuel to combustion temperatures. Initial results with coupons of MAR M-246 (+Hf) and PWA 1480 were followed by fabrication of TFTC on SSME turbine blades. Current efforts are focused on preparation for testing in the Turbine Blade Tester at NASA Marshall Space Flight Center.
The preparation procedure used to obtain superconducting thin films by radio frequency magnetron sputtering of a single mosaic target is described in detail. The single mosaic target is composed of (Y-Er), BaF2, and Cu.
A process for making thin-film batteries including the steps of cleaning a glass or silicon substrate having an amorphous oxide layer several microns thick; defining with a mask the layer shape when depositing cobalt as an adhesion layer and platinum as a current collector; using the same mask as the preceding step to sputter a layer of LiC(0)O2, on the structure while rocking it back and forth; heating the substrate to 300 C. for 30 minutes; sputtering with a new mask that defines the necessary electrolyte area; evaporating lithium metal anodes using an appropriate shadow mask; and, packaging the cell in a dry-room environment by applying a continuous bead of epoxy around the active cell areas and resting a glass slide over the top thereof. The batteries produced by the above process are disclosed.
A process for making thin-film batteries including the steps of cleaning a glass or silicon substrate having an amorphous oxide layer several microns thick; defining with a mask the layer shape when depositing cobalt as an adhesion layer and platinum as a current collector; using the same mask as the preceding step to sputter a layer of LiCoO2 on the structure while rocking it back and forth; heating the substrate to 300 C. for 30 minutes; sputtering with a new mask that defines the necessary electrolyte area; evaporating lithium metal anodes using an appropriate shadow mask; and, packaging the cell in a dry-room environment by applying a continuous bead of epoxy around the active cell areas and resting a glass slide over the top thereof.
Thin film transistor substrates with conductor components in conjunction therewith, and related methods of fabrication.
We present measurements of the properties of thin film superconducting Mo, Mo2N and Mo2N/Mo/Mo2N trilayers of interest for microwave kinetic inductance detector (MKID) applications. Using microwave resonator devices, we investigate the transition temperature, energy gaps, kinetic inductance, and internal quality factors of these materials. We present an Usadel-based interpretation of the trilayer transition temperature as a function of trilayer thicknesses, and a 2-gap interpretation to understand the change in kinetic inductance and internal resonance quality factor (Q) as a function of temperature.
Progress is reported with respect to the development of thin film amorphous (alpha-Si) terrestrial solar cells for space applications. Such devices promise to result in very lightweight, low cost, flexible arrays with superior end of life (EOL) performance. Each alpha-Si cell consists of a tandem arrangement of three very thin p-i-n junctions vapor deposited between film electrodes. The thickness of this entire stack is approximately 2.0 microns, resulting in a device of negligible weight, but one that must be mechanically supported for handling and fabrication into arrays. The stack is therefore presently deposited onto a large area (12 by 13 in), rigid, glass superstrate, 40 mil thick, and preliminary space qualification testing of modules so configured is underway. At the same time, a more advanced version is under development in which the thin film stack is transferred from the glass onto a thin (2.0 mil) polymer substrate to create large arrays that are truly flexible and significantly lighter than either the glassed alpha-Si version or present conventional crystalline technologies. In this paper the key processes for such effective transfer are described. In addition, both glassed (rigid) and unglassed (flexible) alpha-Si cells are studied when integrated with various advanced structures to form lightweight systems. EOL predictions are generated for the case of a 1000 W array in a standard, 10 year geosynchronous (GEO) orbit. Specific powers (W/kg), power densities (W/sq m) and total array costs ($/sq ft) are compared.
Fredholm equation description of current distribution in thin-film superconducting strip transmission line