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At least 433 records · Page 24

Experimental and analytical study of the hydrodynamic and single and two-phase convective heat transfer performance of flexible PDMS microchannels with micropillar arrays

Various copper and silicon based thermal management systems are used in the cooling of electronics. However, the rigid nature of these materials along with their high thermal and electrical conductivity pose a difficulty in developing direct contact embedded flexible cooling systems that can offer robust cooling performance. The low density, thermal stability, chemical inertness, and electrical insulation of Polydimethylsiloxane (PDMS) make it an ideal material to develop lightweight direct contact thermal management systems for electronics. Its ease of fabrication with tunable flexibility provides the opportunity to go beyond traditional electronics and develop advanced active and passive thermal management systems for a wide–range of applications in foldable and wearable electronics, liquid cooling garments, microgravity, and electric motors. In this study, a flexible PDMS based microchannel with micropillar arrays, which enhance the thermal performance of the device through capillary-assisted flow, has been developed. The hydrodynamic and convection heat transfer performance of three PDMS wick pillar geometries, ranging from a porosity of 0.8–0.91, are investigated and compared under single-phase and two-phase conditions. Dielectric coolant FC-3283 is employed and permeability measurements are made for mass fluxes ranging from 53 kg/m 2 s to 369 kg/m 2 s. Given its conformability, the device demonstrates a deviation from Darcy’s Law, within the laminar regime, with an increasing permeability with mass flux at the rate of ~0.5–0.8 Darcy/(kg/m 2 s). A semi-analytical model has been developed and reported to quantify the conformability of the device. The heat transfer performance is experimentally evaluated using the same dielectric fluid for mass flux ranging from 105 kg/m 2 s to 420 kg/m 2 s with heat fluxes ranging from 1.5 W/cm 2 to 16 W/cm 2 . Heat transfer coefficients of up to 7000 W/m 2 K are observed, which are comparable to copper and silicon microchannels. The effect of porosity on the single phase thermal performance has been evaluated against the pumping power to provide a basis for thermal management system design. Finally, high-speed imaging is performed to study the two-phase flow characteristics to provide insight into the vapor formation and removal.

42 ENGINEERING↗

Solid-state non-volatile electronically programmable reversible variable resistance device

A solid-state variable resistance device (10) whose resistance can be repeatedly altered by a control signal over a wide range, and which will remain stable after the signal is removed, is formed on an insulated layer (14), supported on a substrate (12) and comprises a set of electrodes (16a, 16b) connected by a layer (18) of material, which changes from an insulator to a conductor upon the injection of ions, covered by a layer (22) of material with insulating properties which permit the passage of ions, overlaid by an ion donor material (20). The ion donor material is overlaid by an insulating layer (24) upon which is deposited a control gate (26) located above the contacts. In a preferred embodiment, the variable resistance material comprises WO.sub.3, the ion donor layer comprises Cr.sub.2 O.sub.3, and the layers sandwiching the ion donor layer comprise silicon monoxide. When a voltage is applied to the gate, the resistance between the electrode contacts changes, decreasing with positive voltage and increasing with negative voltage.

Ramesham, Rajeshuni↗

Silicon device performance measurements to support temperature range enhancement

Characterization results of a MOS controlled thyristor (MCTA60P60) are presented. This device is rated for 60A and for an anode to cathode voltage of -600 V. As discussed in the last report, the MCT failed during 500 V leakage tests at 200 C. In contrast to the BJT (bipolar junction transistor), MOSFET, and IGBT (insulated gate bipolar transistor) devices tested, the breakdown voltage of the MCT decreases significantly with increasing temperature.

Bromstead, James↗

Hardening electronic devices against very high total dose radiation environments

The possibilities and limitations of hardening silicon semiconductor devices to the high neutron and gamma radiation levels and greater than 10 to the eighth power rads required for the NERVA nuclear engine development are discussed. A comparison is made of the high dose neutron and gamma hardening potential of bipolar, metal insulator semiconductors and junction field effect transistors. Experimental data is presented on device degradation for the high neutron and gamma doses. Previous data and comparisons indicate that the JFET is much more immune to the combined neutron displacement and gamma ionizing effects than other transistor types. Experimental evidence is also presented which indicates that p channel MOS devices may be able to meet the requirements.

Buchanan, B.↗

A low-noise micromachined millimeter-wave heterodyne mixer using Nb superconducting tunnel junctions

A heterodyne mixer with a micromachined horn antenna and a superconductor-insulator- superconductor (SIS) tunnel junction as mixing element is tested in the W-band (75-115 GHz) frequency range. Micromachined integrated horn antennas consist of a dipole antenna suspended on a thin Si(3)N(4) dielectric membrane inside a pyramidal cavity etched in silicon. The mixer performance is optimized by using a backing plane behind the dipole antenna to tune out the capacitance of the tunnel junction. The lowest receiver noise temperature of 30 +/- 3 K (without any correction) is measured at 106 GHz with a 3-dB bandwidth of 8 GHz. This sensitivity is comparable to the state-of-the-art waveguide and quasi-optical SIS receivers, showing the potential use of micromachined horn antennas in imaging arrays.

DeLange, Gert↗

Silicon device performance measurements to support temperature range enhancement

Testing of the metal oxide semiconductor (MOS)-controlled thyristor (MCT) has uncovered a failure mechanism at elevated temperature. The failure appears to be due to breakdown of the gate oxide. Further testing is underway to verify the failure mode. Higher current level inverters were built to demonstrate 200 C operation of the N-MOSFET's and insulated-gate-bipolar transistors (IGBT's) and for life testing. One MOSFET failed early in testing. The origin of this failure is being studied. No IGBT's have failed. A prototype 28-to-42 V converter was built and is being tested at room temperature. The control loop is being finalized. Temperature stable, high value (10 micro-F) capacitors appear to be the limiting factor in the design at this time. In this application, the efficiency will be lower for the IGBT version due to the large V sub(cesat) (3.5-4 V) compared to the input voltage of 28 V. The MOSFET version should have higher efficiency; however, the MOSFET does not appear to be as robust at 200 C. Both versions are built for comparison.

Bromstead, James↗

Structural, chemical, and electronic control in Co–SiNx granular metals for high-pass filter applications

Granular metals, consisting of nanoscale conducting and insulating regions, have been studied for more than 50 years for fundamental and applied research. Granular metals exhibit non-linear conductivity vs frequency behavior, consistent with the universal power law response, and have recently been suggested for high-pass filter applications. Here, we report that cobalt–silicon nitride (Co–SiNx) granular metals with optimized sputter conditions and post-growth annealing exhibit an exceptional 109 increase in conductivity at 1 MHz compared to the DC conductivity. The improved frequency response is correlated with structural and chemical improvements examined via scanning transmission electron microscopy and x-ray photoemission spectroscopy. While we focus on improvements for high-pass filter applications, the structural, chemical, and electronic control demonstrated here will benefit a variety of granular metal and nanoparticle applications.

Annealing↗

Quality control during IC processing

Manual gives detailed test procedures for controlling silicon-wafer processing in manufacture of integrated circuits. Included among 43 test procedures are: ionic, bacterial, and solids contamination of high-purity water needed for wafer processing; crystallographic reflection, purity, and orientation; substrate dimensions and finish; thickness of deposited epitaxial films; oxide quality; photoresist characteristics; pinholes in insulating layers; metallized adhesion; and quality of ohmic contact.

Source record↗

Field Effect Transistor Behavior in Electrospun Polyaniline/Polyethylene Oxide Demonstrated

Novel transistors and logic devices based on nanotechnology concepts are under intense development. The potential for ultra-low-power circuitry makes nanotechnology attractive for applications such as digital electronics and sensors. For NASA applications, nanotechnology offers tremendous opportunities for increased onboard data processing, and thus autonomous decisionmaking ability, and novel sensors that detect and respond to environmental stimuli with little oversight requirements. Polyaniline/polyethylene oxide (PANi/PEO) nanofibers are of interest because they have electrical conductivities that can be changed from insulating to metallic by varying the doping levels and conformations of the polymer chain. At the NASA Glenn Research Center, we have observed field effect transistor (FET) behavior in electrospun PANi/PEO nanofibers doped with camphorsulfonic acid. The nanofibers were deposited onto Au electrodes, which had been prepatterned onto oxidized silicon substrates. The preceding scanning electron image shows the device used in the transistor measurements. Saturation channel currents are observed at surprisingly low source/drain voltages (see the following graph). The hole mobility in the depletion regime is 1.4x10(exp -4)sq cm/V sec, whereas the one-dimensional charge density (at zero gate bias) is calculated to be approximately 1 hole per 50 two-ring repeat units of polyaniline, consistent with the rather high channel conductivity (approx.10(exp -3) S/cm). Reducing or eliminating the PEO content in the fiber is expected to enhance device parameters. Electrospinning is thus proposed as a simple method of fabricating one-dimensional polymer FET's.

Mueller, Carl H.↗

Three-Stage InP Submillimeter-Wave MMIC Amplifier

A submillimeter-wave monolithic integrated- circuit (S-MMIC) amplifier has been designed and fabricated using an indium phosphide (InP) 35-nm gate-length high electron mobility transistor (HEMT) device, developed at Northrop Grumman Corporation. The HEMT device employs two fingers each 15 micrometers wide. The HEMT wafers are grown by molecular beam epitaxy (MBE) and make use of a pseudomorphic In0.75Ga0.25As channel, a silicon delta-doping layer as the electron supply, an In0.52Al0.48As buffer layer, and an InP substrate. The three-stage design uses coplanar waveguide topology with a very narrow ground-to-ground spacing of 14 micrometers. Quarter-wave matching transmission lines, on-chip metal-insulator-metal shunt capacitors, series thin-film resistors, and matching stubs were used in the design. Series resistors in the shunt branch arm provide the basic circuit stabilization. The S-MMIC amplifier was measured for S-parameters and found to be centered at 320 GHz with 13-15-dB gain from 300-345 GHz. This chip was developed as part of the DARPA Submillimeter Wave Imaging Focal Plane Technology (SWIFT) program (see figure). Submillimeter-wave amplifiers could enable more sensitive receivers for earth science, planetary remote sensing, and astrophysics telescopes, particularly in radio astronomy, both from the ground and in space. A small atmospheric window at 340 GHz exists and could enable ground-based observations. However, the submillimeter-wave regime (above 300 GHz) is best used for space telescopes as Earth s atmosphere attenuates most of the signal through water and oxygen absorption. Future radio telescopes could make use of S-MMIC amplifiers for wideband, low noise, instantaneous frequency coverage, particularly in the case of heterodyne array receivers.

Pukala, David↗

Fabrication of Electrostatically Actuated Microshutters Arrays

A new fabrication process has been developed to actuate microshutter arrays (MSA) electrostatically at NASA Goddard Space Flight Center. The microshutters, made with silicon nitride membranes with a pixel size of 100 x 200 sq microns, rotate on torsion bars. The microshutters are actuated, latched, and addressed electrostatically by applying voltages on the electrodes the front and back sides of the microshutters. The atomic layer deposition (ALD) of aluminum oxide was used to insulate electrodes on the back side of walls; the insulation can withstand over 100 V. The ALD aluminum oxide is dry etched, and then the microshutters are released in vapor HF.

microshutter arrays (MSA)↗

Properties of textile grade ceramic fibers

The availability of textile grade ceramic fibers has sparked great interest for applications in composite reinforcement and high temperature insulation. This paper summarizes the properties of various small diameter textile grade ceramic fibers currently available. Room temperature mechanical and electrical properties of the fibers are discussed for three cases: ambient conditions, after heat aging in argon, and after heat aging in wet air. Dow Corning (R) HPZ Ceramic Fiber, a silicon nitride type fiber, is shown to have improved retention of mechanical and electrical properties above 1200 C.

Pudnos, Eric↗

Cooling system and insulation concept for a Mach 5 turbo-ramjet aircraft

A cooling system and insulation concept for a Mach 5 cruise aircraft, using non-cryogenic fuel is presented. Catalytic endothermic reaction of petroleum fuel is used as the heat sink for engine cooling. A secondary closed-loop coolant circuit removes heat from the engine and transfers this heat to the catalytic reactor. Insulation on the engine flow path surfaces reduces the cooling requirements. A high temperature insulation system, which is capable of a surface temperature of 4,000 F, is used for the combustor and nozzle. A complete closed-loop cooling system design is shown in detail. Main features of this system include a fuel preheater, a catalytic fuel reactor, and engine wall cooling panels. A silicone-based liquid polymer, designed for extended use at 750 F, is used as the coolant. The preheater and reactor design are based on the results of recent experimental work. The cooling panels are designed using a thermal fluid analysis computer program, which was originally developed for the National Aero-Space Plane (NASP). Major components are analyzed structurally as well as thermally and weights are presented.

Jones, S. C.↗

Characterization of Space Shuttle External Tank Thermal Protection System (TPS) Materials in Support of the Columbia Accident Investigation

NASA suffered the loss of the seven-member crew of the Space Shuttle Columbia on February 1, 2003 when the vehicle broke apart upon re-entry to the Earth's atmosphere. The final report of the Columbia Accident Investigation Board (CAIB) determined that the accident was caused by a launch ascent incident-a suitcase-sized chunk of insulating foam on the Shuttle's External Tank (ET) broke off, and moving at almost 500 mph, struck an area of the leading edge of the Shuttle s left wing. As a result, one or more of the protective Reinforced Carbon-Carbon (RCC) panels on the wing leading edge were damaged. Upon re-entry, superheated air approaching 3,000 F breached the wing damage and caused the vehicle breakup and loss of crew. The large chunk of insulating foam that broke off during the Columbia launch was determined to come from the so-called bipod ramp area where the Shuttle s orbiter (containing crew) is attached to the ET. Underneath the foam in the bipod ramp area is a layer of TPS that is a cork-filled silicone rubber composite. In March 2003, the NASA Marshall Space Flight Center (MSFC) in Huntsville, Alabama received cured samples of the foam and composite for testing from the Michoud Assembly Facility (MAF) in New Orleans, Louisiana. The MAF is where the Shuttle's ET is manufactured. The foam and composite TPS materials for the ET have been well characterized for mechanical property data at the super-cold temperatures of the liquid oxygen and hydrogen fuels used in the ET. However, modulus data on these materials is not as well characterized. The TA Instruments 2980 Dynamic Mechanical Analyzer (DMA) was used to determine the modulus of the two TPS materials over a range of -145 to 95 C in the dual cantilever bending mode. Multi-strain, fixed frequency DMA tests were followed by multi-frequency, fixed strain tests to determine the approximate bounds of linear viscoelastic behavior for the two materials. Additional information is included in the original extended abstract.

Wingard, Charles D.↗

Future Development Trajectories for Imaging X-rays Spectrometers Based on Microcalorimeters

Future development trajectories for imaging x-ray spectrometers based on microcalorimeters. Since their invention 30 years ago, the capability of X-ray microcalorimeters has increased steadily, with continual improvements in energy resolution, speed, and array size. Arrays of up to 1024 pixels have been produced, and resolution better than 1 eV at 1.5 keV has been achieved. These detectors can be optimized for the highest priority science, such as designing for the highest resolving power at low energies at the expense of dynamic range, or the greatest focal-plane coverage at the expense of speed. Three types of X-ray microcalorimeters presently dominate the field, each characterized by the thermometer technology. The first two types use temperature-sensitive resistors: semiconductors in the metal-insulator transition and superconductors operated in the superconducting-normal transition. The third type uses a magnetically coupled thermometer, and is at an earlier stage of development than the other two. The Soft X-ray Spectrometer (SXS) on Astro-H, expected to launch in 2015, will use an array of silicon thermistors with HgTe X-ray absorbers that will operate at 50 mK. Both the semiconductor and superconductor calorimeters have been implemented in small arrays. Kilopixel arrays of the superconducting calorimeters are being produced, and much larger arrays may require the non-dissipative advantage of magnetically coupled thermometers. I will project the development trajectories of these detectors and their read-out technologies and assess what their capabilities and limitations will be 10 - 20 years from now.

Kilbourne, Caroline A.↗

Violating Kirchhoff’s Law of Thermal Radiation in Semitransparent Structures

Kirchhoff’s law of thermal radiation imposes a constraint on photon-based energy harvesting processes since part of the incident energy flux is inevitably emitted back to the source. By breaking the reciprocity of the system, it is possible to overcome this restriction and improve the efficiency of energy harvesting. Here, we design and analyze a semitransparent emitter that fully absorbs normally incident energy from a given direction with zero backward and unity forward emissivity. The nearly ideal performance with wavelength-scale thickness is achieved due to the magneto-optical effect and the guided-mode resonance engineered in the emitter structure. We derive the general requirements for the nonreciprocal emitter using the temporal coupled mode theory and the symmetry considerations. As a result, we provide a realistic emitter design based on a photonic crystal slab consisting of a magnetic Weyl semimetal and silicon.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Thermal conductivity evaluation of ion irradiated Si 3 N 4 and ZrN ceramics using spatial domain thermoreflectance

Nitride ceramics have been investigated for different applications in the nuclear industry, such as space nuclear power, fusion reactor diagnostics and plasma heating, inert matrix fuels, and accident tolerant fuels. Although thermal conductivity remains one of the most important properties to track following irradiation, traditional techniques such as laser flash and xenon flash are limited to bulk sample characterization, which requires lengthy and cost-consuming neutron irradiation. This work used spatial domain thermoreflectance (SDTR) for the micrometer-scale measurement of thermal conductivity in 15 MeV Ni ion-irradiated silicon nitride and zirconium nitride from 1 to 50 dpa and 300 to 700 °C. Here, the SDTR-measured unirradiated thermal conductivity was found to be consistent with the published data on bulk samples. Electrically conductive ZrN exhibits modest reduction after irradiation which is minimal at the highest irradiation temperatures. In electrically insulating Si 3 N 4 , the reduction is more significant and unlike ZrN, the reduction remains significant even at a higher irradiation temperature. The thermal resistance evolution following irradiation was compared with lattice swelling, which was determined using grazing incidence x-ray diffraction, and radiation-induced defects were observed using transmission electron microscopy. A saturation value was observed between 15 and 50 dpa for thermal conductivity degradation in both nitride ceramics and a direct correlation with high-temperature defect recombination was observed, as well as the potential presence of additional carrier scattering mechanisms.

36 MATERIALS SCIENCE↗