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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 433 records · Page 24
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Method of mitigating titanium impurities effects in p-type silicon material for solar cells

Microstructural evaluation tests performed on Cu-doped, Ti-doped and Cu/Ti doped p-type silicon single crystal wafers, before and after the solar cell fabrication, and evaluation of both dark forward and reverse I-V characteristic records for the solar cells produced from the corresponding silicon wafers, show that Cu mitigates the unfavorable effects of Ti, and thus provides for higher conversion efficiency, thereby providing an economical way to reduce the deleterious effects of titanium, one of the impurities present in metallurgical grade silicon material.

Salama, A. M.↗
NASA NTRS1988

Indentation plasticity and fracture in silicon

Measurements of the ductile-brittle transition temperature of heavily doped silicon were carried out using indentation techniques. Diamond pyramid hardness tests were performed on the (100) face of heavily doped N-type and P-type and intrinsic silicon single crystals. Tests were performed over the range 200 C to 850 C and loads of 100 to 500 g were used. Samples were subsequently etched to reveal dislocation rosettes produced by indentation. Intrinsic silicon underwent a ductile-brittle transition at 660 C, P-type at 645 C and N-type at 625 C. Hardness values varied from 1.1 GPa at 700 C to 11.7 GPa at 200 C. Significant effects of hardness on doping were present only at the highest temperatures. Lower loads generally produced higher hardness but load did not affect the Ductile-Brittle Transition Temperature (DBTT). Fracture toughness values ranged from 0.9 MPa m(1/2) at 200 C to 2.75 MPa m(1/2) near the DBTT. Doping did not affect the fracture toughness of silicon. P-type doping increased the size of dislocation rosettes observed after indentation, but N-type did not, in contradiction of the expected results. Results are discussed in terms of the effect of doping on the dislocation mobility in silicon.

Rybicki, George C.↗
DOE OSTI2025

All hard X-ray transient grating spectroscopy

Optical-domain transient grating (TG) spectroscopy is the ideal tool to investigate transport phenomena in gases, liquids and solids, but it is limited to typically micron-size grating periods. Extreme-Ultraviolet TG has represented a major leap forward to access the mesoscopic scales. Hard X-ray TGs open access in principle to the nanoscale. Hard X-ray TGs were recently generated using the Talbot effect and probed by optical pulses, but these hinder exploiting the advantages of the nanoscale gratings. Here, we present an all-X-ray TG study, in which few-femtosecond hard X-ray pulses are used both for excitation and probing. Our experiment was performed on an amorphous film of an FeGd alloy and on a thin silicon single crystal. The results show a manifestation of the TG induced by the X-ray pump and probe pulses in the form of Talbot carpets, as well as temporal evolution of the grating in crystalline silicon showing coherent optical phonons. Ultrafast all-X-ray TG spectroscopy has the potential to study fundamental excitations with femtosecond time resolution and nanometer spatial sensitivity.

Ferrari, Eugenio [Deutsches Elektronen-Synchrotron↗
NASA NTRS1995

Monte Carlo Simulation of the Rapid Crystallization of Bismuth-Doped Silicon

In this Letter we report Ising model simulations of the growth of alloys which predict quite different behavior near and far from equilibrium. Our simulations reproduce the phenomenon which has been termed 'solute trapping,' where concentrations of solute, which are far in excess of the equilibrium concentrations, are observed in the crystal after rapid crystallization. This phenomenon plays an important role in many processes which involve first order phase changes which take place under conditions far from equilibrium. The underlying physical basis for it has not been understood, but these Monte Carlo simulations provide a powerful means for investigating it.

Jackson, Kenneth A.↗
DOE OSTI2024

Crystallization and assembly at interfaces: Celebrating the achievements of a vibrant research community

Crystallization is one of the cornerstones of modern materials science and engineering and plays a critical role in industries ranging from petroleum derivative manufacturing to microstructural engineering of structural materials and the defect-free growth of silicon single crystals for integrated chip technology. Also, in the realm of environmental and biological processes, the mineralization of diverse compounds has shaped the vast array of ecosystems we observe today. Conversely, understanding the crystallization and assembly of building blocks of various sizes at interfaces has broader impacts on materials synthesis, performance of energy storage devices, optimized processing conditions, and more.

36 MATERIALS SCIENCE↗
NASA NTRS1978

Silicon solar cell process development, fabrication and analysis

A program plan, baseline process, measurement program and quality control plan were generated. Cutting operations were completed on the silicon sheet material. The first fabrication run of polycrystalline silicon into solar cells by baseline process was completed. Average conversion efficiency for solar cells fabricated by the baseline process from sheet and measured at air mass zero was 10.4%, compared with the control cells, fabricated from single crystal CZ silicon, whose average conversion efficiency was 12.2%.

Source record↗
NASA NTRS1976

The effect of secondary impurities on solar cell performance

Czochralski and float zone sigle crystals of silicon were doped with the primary impurities B or P so that a resistivity of 0.5 ohm cm resulted, and in addition doped with certain secondary impurities including Al, C, Cr, Cu, Fe, Mg, Mn, Na, Ni, O, Ti, V, and Zr. The actual presence of these impurities was confirmed by analysis of the crystals. Solar cell performance was evaluated and found to be degraded most significantly by Ti, V, and Zr and to some extent by most of the secondary impurities considered. These results are of significance to the low cost silicon program, since any such process would have to yield at least tolerable levels of these impurities.

Hill, D. E.↗
NASA NTRS2001

Preliminary Results from the First Flight of ATIC: The Silicon Matrix

The Advanced Thin Ionization Calorimeter (ATIC) uses a silicon matrix detector to determine charge in conjunction with a scintillator hodoscope that measures charge and trajectory. Cosmic rays that interact in a carbon target have their energy determined from the shower that develops within a fully active calorimeter composed of a stack of scintillating BGO crystals. The silicon matrix consists of 4480 individual silicon pads, each capable of measuring the signal from cosmic rays with atomic numbers from 1 to 26. Preliminary results will be presented describing the performance of the silicon matrix during the 16-day maiden flight of ATIC around Antarctica.

Adams, J. H., Jr.↗
NASA NTRS2001

Preliminary Results From the First Flight of ATIC: The Silicon Matrix

The Advanced Thin Ionization Calorimeter (ATIC) uses a silicon matrix detector in conjunction with a scintillator hodoscope to determine the incident cosmic ray's charge. Cosmic rays that interact in a carbon target have their energy determined from the shower that develops within a fully active calorimeter composed of a stack of scintillating BGO crystals. The silicon matrix consists of 4480 individual silicon pads, each capable of measuring the signal from cosmic rays with atomic numbers from I to 26. Preliminary results will be presented describing the performance of the silicon matrix during the 16-day maiden flight of ATIC around Antarctica.

Adams, James H., Jr.↗
DOE OSTI2020

Towards controlled synthesis of 2D crystals by chemical vapor deposition (CVD)

We report the emergence of two-dimensional (2D) materials has captured the imagination of researchers since graphene was first exfoliated from graphite in 2004. Their exotic properties give rise to many exciting potential applications in advanced electronic, optoelectronic, energy and biomedical technologies. Scalable growth of high quality 2D materials is crucial for their adoption in technological applications the same way the arrival of high quality silicon single crystals was to the semiconductor industry. A huge amount of effort has been devoted to grow large-area, highly crystalline 2D crystals such as graphene and transition metal dichalcogenides (TMDs) through various methods. While CVD growth of wafer-scale monolayer graphene and TMDs has been demonstrated, considerable challenges still remain. In this perspective, we advocate for the focus on the crystal growth morphology as an underpinning for understanding, diagnosing and controlling the CVD process and environment for 2D material growth. Like snowflakes in nature, 2D crystals exhibit a rich variety of morphologies under different growth conditions. The mapping of crystal shapes in the growth parameter space “encodes” a wealth of information, the deciphering of which will lead to better understanding of the fundamental growth mechanism and materials properties. To this end, we envision a collective effort by the 2D materials community to establish the correlation between crystal shapes and the intrinsic thermodynamic and kinetic parameters for CVD reactions through integrated crystal growth experiment, database development and machine learning assisted predictive modeling, which will pave a robust path towards controlled synthesis of 2D materials and heterostructures.

36 MATERIALS SCIENCE↗
NASA NTRS2011

Stability of a Crystal Oscillator, Type Si530, Inside and Beyond its Specified Operating Temperature Range

Data acquisition and control systems depend on timing signals for proper operation and required accuracy. These clocked signals are typically provided by some form of an oscillator set to produce a repetitive, defined signal at a given frequency. Crystal oscillators are commonly used because they are less expensive, smaller, and more reliable than other types of oscillators. Because of the inherent characteristics of the crystal, the oscillators exhibit excellent frequency stability within the specified range of operational temperature. In some cases, however, some compensation techniques are adopted to further improve the thermal stability of a crystal oscillator. Very limited data exist on the performance and reliability of commercial-off-the-shelf (COTS) crystal oscillators at temperatures beyond the manufacturer's specified operating temperature range. This information is very crucial if any of these parts were to be used in circuits designed for use in space exploration missions where extreme temperature swings and thermal cycling are encountered. This report presents the results of the work obtained on the operation of Silicon Laboratories crystal oscillator, type Si530, under specified and extreme ambient temperatures.

Patterson, Richard L.↗
DOE OSTI2024

In situ tuning of optomechanical crystals with nano-oxidation

Optomechanical crystals are a promising device platform for quantum transduction and sensing. Precise targeting of the optical and acoustic resonance frequencies of these devices is crucial for future advances on these fronts. However, fabrication disorder in these wavelength-scale nanoscale devices typically leads to inhomogeneous resonance frequencies. Here we achieve in situ , selective frequency tuning of optical and acoustic resonances in silicon optomechanical crystals via electric field-induced nano-oxidation using an atomic-force microscope. Our method can achieve a tuning range >2nm (0.13%) for the optical resonance wavelength in the telecom C-band, and >60MHz (1.2%) for the acoustic resonance frequency at 5 GHz. The tuning resolution of 1.1 pm for the optical wavelength and 150 kHz for the acoustic frequency allows us to spectrally align multiple optomechanical crystal resonators using a pattern generation algorithm. Our results establish a method for precise post-fabrication tuning of optomechanical crystals. This technique can enable coupled optomechanical resonator arrays, scalable resonant optomechanical circuits, and frequency matching of microwave-optical quantum transducers.

Hatipoglu, Utku (ORCID:0000000205119196)↗
NASA NTRS1986

Analytical and numerical studies of the thermocapillary flow in a uniformly floating zone

The microgravity environment of an orbiting vehicle permits crystal growth experiments in the presence of greatly reduced buoyant convection in the liquid melt. Crystals grown in ground-based laboratories do not achieve their potential properties because of dopant variations caused by flow in the melt. The floating zone crystal growing system is widely used to produce crystals of silicon and other materials. However, in this system the temperature gradient on the free sidewall surface of the melt is the source of a thermocapillary flow which does not disappear in the low-gravity environment. The idea of using a uniform rotation of the floating zone system to confine the thermocapillary flow to the melt sidewall leaving the interior of the melt passive is examined. A cylinder of fluid with an axial temperature gradient imposed on the cylindrical sidewall is considered. A half zone and the linearized, axisymmetric flow in the absence of crystal growth is examined. Rotation is found to confine the linear thermocapillary flow. A simplified model is extended to a full zone and both linear and nonlinear thermocapillary flows are studied theoretically. Analytical and numerical methods are used for the linear flows and numerical methods for the nonlinear flows. It was found that the linear flows in the full zone have more complicated and thicker boundary layer structures than in the half zone, and that these flows are also confined by the rotation. However, for the simplified model considered and for realistic values for silicon, the thermocapillary flow is not linear. The fully nonlinear flow is strong and unsteady (a weak oscillation is present) and it penetrates the interior. Some non-rotating flow results are also presented. Since silicon as a large value of thermal conductivity, one would expect the temperature fields to be determined by conduction alone. This is true for the linear and weakly nonlinear flows, but for the stronger nonlinear flow the results show that temperature advection is also important. Uniform rotation may still be a means of confining the flow and the results obtained define the procedure to be used to examine this hypothesis.

Fowlis, W. W.↗
DOE OSTI2021

Test beam characterization of sensor prototypes for the CMS Barrel MIP Timing Detector

The MIP Timing Detector will provide additional timing capabilities for detection of minimum ionizing particles (MIPs) at CMS during the High Luminosity LHC era, improving event reconstruction and pileup rejection. The central portion of the detector, the Barrel Timing Layer (BTL), will be instrumented with LYSO:Ce crystals and Silicon Photomultipliers (SiPMs) providing a time resolution of about 30 ps at the beginning of operation, and degrading to 50-60 ps at the end of the detector lifetime as a result of radiation damage. In this work, we present the results obtained using a 120 GeV proton beam at the Fermilab Test Beam Facility to measure the time resolution of unirradiated sensors. A proof-of-concept of the sensor layout proposed for the barrel region of the MTD, consisting of elongated crystal bars with dimensions of about 3×3×57 mm3 and with double-ended SiPM readout, is demonstrated. This design provides a robust time measurement independent of the impact point of the MIP along the crystal bar. We tested LYSO:Ce bars of different thickness (2, 3, 4 mm) with a geometry close to the reference design and coupled to SiPMs manufactured by Hamamatsu and Fondazione Bruno Kessler. The various aspects influencing the timing performance such as the crystal thickness, properties of the SiPMs (e.g. photon detection efficiency), and impact angle of the MIP are studied. A time resolution of about 28 ps is measured for MIPs crossing a 3 mm thick crystal bar, corresponding to a most probable value (MPV) of energy deposition of 2.6 MeV, and of 22 ps for the 4.2 MeV MPV energy deposition expected in the BTL, matching the detector performance target for unirradiated devices.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Laser-Induced Spectral Diffusion of T Centers in Silicon Nanophotonic Devices

Color centers in silicon are emerging as spin-photon interfaces operating at telecommunication wavelengths. The nanophotonic device integration of silicon color centers via ion implantation leads to significant optical-linewidth broadening, which makes indistinguishable photon generation challenging. Here, we study the optical spectral diffusion of T centers in a silicon photonic crystal cavity. We investigate the linewidth-broadening timescales and origins by measuring the temporal correlations of the resonance frequency under different conditions. Spectral hole-burning measurements reveal no spectral broadening at short timescales from 102 ns to 725 ns. We probe broadening at longer timescales using a check pulse to herald the T-center frequency and a probe pulse to measure the frequency after a wait time. The optical resonance frequency is stable up to 3 ms in the dark. Laser pulses below the silicon band gap applied during the wait time lead to linewidth broadening. Our observations establish laser-induced processes as the dominant spectral-diffusion mechanism for T centers in devices and inform materials and feedback strategies for indistinguishable photon generation.

Zhang, Xueyue↗
DOE OSTI2019

Measurement and alleviation of subsurface damage in a thick-crystal neutron interferometer

The construction is described of a monolithic thick-crystal perfect silicon neutron interferometer using an ultra-high-precision grinding technique and a combination of annealing and chemical etching that differs from the construction of prior neutron interferometers. The interferometer is the second to have been annealed after machining and the first to be annealed prior to chemical etching. Monitoring the interference signal at each post-fabrication step provides a measurement of subsurface damage and its alleviation. In this case, the strain caused by subsurface damage manifests itself as a spatially varying angular misalignment between the two relevant volumes of the crystal and is reduced from ~10 -5 rad to ~10 -9 rad by way of annealing and chemical etching.

Chemistry↗
NASA NTRS1998

The Role of Marangoni Convection for the FZ-Growth of Silicon

In growing crystals by the floating zone (FZ) technique under microgravity, the size restriction we have under earth conditions because of the hydrostatic pressure are avoided. Further, buoyancy related convection is eliminated to a high degree. But in the case of silicon, the gravity independent thermocapillary (Marangoni) convection is time-dependent even for small zone geometries. This has been demonstrated in several Technische Experimente unter Schwerelosigkeit (TEXUS) - technical experiments under reduced gravity) flights. Thus, to really take advantage of microgravity with respect to improve crystal quality, tools are required to control Marangoni convection in space facilities. Applying magnetic fields, convection can be influenced; fluid flow can either be damped (static magnetic fields) or overlaid by a regular flow regime (rotating magnetic fields). In floating zones of 8-10mm diameter and height (Ma approximately equals 6 x 10(exp 3)), a static magnetic field of about 2OOmT is sufficient to suppress time-dependent Marangoni convection to a high degree, but in dependence on the kind and the concentration of the added dopant, a new type of strongly pronounced dopant inhomogeneities have been detected. They are originated by thermoelectromagnetic convection. This can be avoided as well as detrimental effects on the radial dopant distribution by using rotating magnetic fields instead of static ones. Applying 75mT/50Hz to the FZ, the intensity of the dopant fluctuations is reduced to a high degree. Considering the rather low power consumption of rotating magnetic fields, this will be a useful tool for control or elimination of time-dependent Marangoni convection under microgravity. The strong time dependent character of thermocapillary flow and its influence on the temperature field has been measured in silicon half-zones for Marangoni numbers of Ma is approximately equal to 1-1.5 x 10(exp 4): temperature fluctuations up to 4C have been determined. Their frequency range was 0.1 and 0.4 Hz. Between certain thermocouple or sensor pairs, strong correlation has been detected.

Dold, P.↗
DOE OSTI2020

Effects of surface undulations on asymmetric X-ray diffraction: a rocking-curve topography study

The results are reported of an X-ray diffraction study of an Si crystal designed and fabricated for very asymmetric diffraction from the 333 reflection for X-ray energies of 8.100 and 8.200 keV. A crystal with an asymmetry angle of 46 ± 0.1° between the surface and the (111) planes was studied. The grazing angles of incidence were near 1.08 and 0.33° for these two energies, respectively. Features arising from surface undulations were not observed at 8.100 keV, but were observed at 8.200 keV. The results at 8.100 keV allow an alternative explanation based on strain near the surface to be ruled out. Topographic images were obtained as a function of rocking angle, and in the case of 8.200 keV the surface morphology is evident. Finally, the results are found to be in agreement with dynamical X-ray diffraction calculations made with the Takagi–Taupin equations specialized to a surface having convex or concave features, as reported in the accompanying paper [Macrander (2020). J. Appl. Cryst. 53 , 793–799].

36 MATERIALS SCIENCE↗