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At least 433 records · Page 24
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Communication—Functional Conductive Polymer Binder for Practical Si-Based Electrodes

Multifunctional conductive binders represent an emerging class of polymer materials to address inherent challenges of Si electrodes for high capacity lithium-ion batteries. Advanced binders with oriented functionalities are greatly desired to facilitate the battery chemistry. We here report stable capacity cycling of a practical composite anode comprising industrial available SiO x (>60 wt%), carbon materials and a conductive polymer binder—poly(9,9-dioctylfluorene- co -fluorenonecomethylbenzoic ester) (PFM). This multifunctional polymer functions as both an interface modifier and an electrode binder for high-performing SiO x composite electrodes. The viability of multifunctional conductive polymer binders was further validated in a practical full cell.

25 ENERGY STORAGE↗
DOE OSTI2022

Visible (400- to 700-nm) chirped-grating-coupled waveguide spectrometer

An integrable on-chip spectrometer, based on a transversely-chirped-grating waveguide-coupler for the 400- to 700-nm visible spectral range is demonstrated. For a fixed angle of incidence, the coupling wavelength is dependent on the local grating period and the waveguide structure. The transversely-chirped-input grating is fabricated on a SiO 2 -Si 3 N 4 -SiO 2 waveguide atop a Si substrate by interferometric lithography in two sections on a single silicon substrate. A uniform period grating, separated from the input coupler by a propagation region, is provided for out-coupling to a 2048 element CMOS detector array. The incident light with wavelength spanning 400- to 700-nm is coupled into waveguide at 33.5° through the chirped grating coupler. A resolution of ∼ 1.2 nm is demonstrated without any signal processing reconstruction.

Wang, Xuemei↗
DOE OSTI2020

Phase transformation of hydrous ringwoodite to the lower-mantle phases and the formation of dense hydrous silica

In order to understand the effects of H 2 O on the mineral phases forming under the pressure-temperature conditions of the lower mantle, we have conducted laser-heated diamond-anvil cell experiments on hydrous ringwoodite (Mg 2 SiO 4 with 1.1wt% H 2 O) at pressures between 29 and 59 GPa and temperatures between 1200 and 2400 K. Our experimental results show that hydrous ringwoodite (hRw) converts to crystalline dense hydrous silica, stishovite (Stv) or CaCl 2 -type SiO 2 (mStv), containing 1 wt% H 2 O together with Brd and MgO at the pressure-temperature conditions expected for shallow lower-mantle depths between approximately 660 to 1600 km. Considering lack of sign for melting in our experiments, our preferred interpretation of the observation is that Brd partially breaks down to dense hydrous silica and periclase (Pc), forming Brd + Pc + Stv mineralogy. Our experiments may provide an explanation for the enigmatic coexistence of Stv and Fp inclusions in lower-mantle diamonds

58 GEOSCIENCES↗
DOE OSTI2024

Different structural behavior of MgSiO 3 and CaSiO 3 glasses at high pressures

Knowledge of the structural behavior of silicate melts and/or glasses at high pressures provides fundamental information for discussing the nature and properties of silicate magmas in the Earth’s interior. The behavior of Si-O structures under high-pressure conditions has been widely studied, while the effect of cation atoms on the high-pressure structural behavior of silicate melts or glasses has not been well investigated. Here, in this study, we investigated the structures of MgSiO 3 and CaSiO 3 glasses up to 5.4 GPa by in situ X-ray pair distribution function measurements to understand the effect of different cations (Mg 2+ and Ca 2+ ) on high-pressure structural behavior of silicate glasses. We found that the structural behavior of MgSiO 3 and CaSiO 3 glasses are different at high pressures. The structure of MgSiO 3 glass changes by shrinking of Si-O-Si angle with increasing pressures, which is consistent with previous studies for SiO 2 and MgSiO 3 glasses. On the other hand, CaSiO 3 glass shows almost no change in Si-Si distance at high pressures, while the intensities of two peaks at ~3.0 and ~3.5 Å change with increasing pressure. The structural change in CaSiO 3 glass at high pressure is interpreted as the change in the fraction of the edge-shared and corner-shared CaO 6 -SiO 4 structures. The different high-pressure structural behavior observed in MgSiO 3 and CaSiO 3 glasses may be the origin of differences in properties, such as viscosity between MgSiO 3 and CaSiO 3 melts at high pressures. This signifies the importance of different structural behaviors due to different cations in investigations of the nature and properties of silicate magmas in Earth’s interior.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Composition Measurements of the LAW Phase 4 Glasses

In this report, the Savannah River National Laboratory provides results from the analyses of glass compositions for a series of simulated nuclear waste glasses fabricated at the Pacific Northwest National Laboratory. The series included quenched versions of the glasses. The resulting data will be used in the development of enhanced property/composition models for waste vitrification at Hanford. Chemical analyses were performed on a representative sample of each of the quenched glasses to allow for comparisons with the targeted compositions. For the quenched glasses from Set 1, measured concentrations of B 2 O 3 and SiO 2 were generally above the targeted values. Measured concentrations for MgO and P 2 O 5 were generally low for glasses. Measured concentrations of ZrO 2 were both below and above the targeted values for glasses. For the quenched glasses from Set 2, measured concentrations of AL 2 O 3 , B 2 O 3 , P 2 O 5 , SiO 2 , and ZrO 2 were generally below the targeted values. Measured concentrations of Na 2 0 were both below and above the targeted values for glasses. The measured concentrations of chlorine, fluorine, and SO 3 were below the targeted values for most of the study glasses, likely because of volatility during melting. Overall, there were no indications of errors in batching of the simulated waste glasses. These results can be used in further characterization of this series of glasses, including the normalization of Product Consistency Test results.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2022

Novel and effective surface passivation for high efficiency n- and p-type Silicon solar cell

The project objective was to develop a novel Si surface passivation method using chalcogens, sulfur (S) and/or selenium (Se), as passivating elements, to withstand industry-standard high temperature contacting and metallization schemes for p-type Si based passivated emitter and rear contact (p-PERC) solar cells. The back surface passivation of PERC cells has been improved drastically with the invention and successful application of an Al 2 O 3 passivation layer. However, the front n + diffused junction surface is still poorly passivated by the standard amorphous silicon nitride (SiNx) anti-reflection coating (ARC) layer. This project sought to address the passivation challenges of both front n+ emitter and undiffused p-Si back surface. Improved p-PERC solar cell performance with open circuit voltage (V OC ) > 680 mV and efficiency of 22% were targeted to validate superior defect passivation properties as compared to standard SiO 2 / Al 2 O 3 passivation. During this project, we systematically investigated process-structure-properties-performance relationships of this novel advanced defect passivation approach. The S/Se passivation was carried out by reacting industrial Czochralski (Cz) Si wafers in H 2 S and H 2 Se gases in a chemical vapor deposition (CVD) reactor at temperatures up to 700°C. After an exhaustive optimization of the process parameters (temperature, time, and gas concentration), we established an optimized process and demonstrated extremely low surface recombination velocities (SRVs) of 1.5 cm/s and 8 cm/s on n-type and p-type Si, respectively, by S-passivation. In-depth surface and interface characterization were performed using soft x-ray and photoelectron spectroscopies (XPS, UPS, XES), combined with capacitance-voltage-frequency (C-V-f) measurements, to decipher the surface chemical/electronic structure and interface defect state densities. These measurements provided critical understanding of the defect passivation mechanism and elucidated the presence of surface S-Si bonds, a reduction of surface dipoles, and low interface state densities (D it ) < 10 11 cm -2 ev -1 . We also found that the Se-passivation is inferior to the S-passivation (by at least one order of magnitude in SRV). Application of the optimized S-passivation to the n+ diffused emitter surface led to a low surface recombination current density, J0 ≈ 40 fA/cm 2 (~ 1/4 of the industry-standard SiNx-passivation), and high implied V OC (686 mV) in p-PERC solar cell structures. The S-passivation process also was found to improve the bulk quality of the p-type Si, better than the SiO 2 or Al 2 O 3 passivation processes. After successful demonstration of efficient passivation of Si surface defects by S, we extensively studied the air, thermal, and illumination stability of the passivation structure. S-passivation itself degrades in air due to competing reactions with moisture and oxygen to form oxides, which can be eliminated by a SiNx capping layer (also acting as a anti-reflective coating). After SiNx process optimization, we demonstrated illumination and thermally stable S-passivation with SRV < 5 cm/s and J 0 < 80 fA/cm 2 . These enhancements in Si passivation, incorporated into p-PERC cells, achieved an efficiency of 19.93% with V OC = 649 mV, using manufacturing metallization and contacting schemes. The low cell performance (cell V OC is much less than the implied V OC = 686 mV, anticipated from surface passivation) was identified due to degradation of S-passivation during the metal firing step (out-diffusion of S from the Si interface to the SiNx surface). The S-passivation of Si surfaces shows significant promise with excellent passivation quality, essential for high performance (high V OC , high efficiency) solar cells. Integration of this innovative defect passivation into devices, however, demands further development of the capping layer, low temperature (<700°C) metallization process, and/or engineering of advanced device structures. Surface passivation-dominated advanced Si solar cells, such as tunnel oxide passivated contacts and Si heterojunctions, are increasingly of interest due to their high-performance potential and will have a growing photovoltaic market share in the near future.

14 SOLAR ENERGY↗
DOE OSTI2024

Passivated Contacts for Direct Wafer Product (Final Technical Report)

This TCF project developed a thin-oxide (SiO 2 )/polycrystalline silicon (poly-Si) passivated contact solar cell on CubicPV's (formally 1366 Technologies, Inc.) Direct Wafer® Product (DWP) kerfless wafers. The project used two NREL-developed technologies described in U.S. Patent No. 9,911,873, Hydrogenation of Passivated Contacts and U.S. Patent Application Serial No. 15/890,172, Doped Passivated Contacts . The project was motivated by a potential higher efficiency cell (compared to a PERC cell) using passivated contacts on the ultra-low cost kerfless wafers grown using the Direct Wafer process. The hope was to accelerate market adoption of the cell and wafer by delivering the lowest LCOE in the PV industry. The project tested both n-type and p-type SiO 2 /poly-Si passivated contacts grown by thermal oxidation and plasma enhanced chemical vapor deposition (PECVD) of the poly-Si layer on DWP with varying wafer resistivities. Both deposition techniques are industry standards and thus economically viable methods for commercializing the contacts. The results indicated that both n-type and p-type poly-Si passivated contacts can be formed on polycrystalline DWP wafers, but implied open-circuit voltages (i Voc ) were limited to below 0.65 mV (compared with ~ 730 mV on n-Cz wafers). Diffusion of H to the Si/SiO 2 /poly-Si interface was key to obtaining high i Voc values. In this study, H was diffused from a high-temperature SiN x layer deposited over the poly-Si layer during a high-temperature firing step, similar to one used for screen printed metals. The study concluded that poly-Si passivated contacts on DWP wafers passivated the surface of the wafers as well as PERC passivated surfaces, which use a less expensive dielectric layer stack. The project showed that Direct Wafer Product wafers grown by CubicPV could produce high i Voc values (~0.647 mV), which could produce a cell over 20% efficient with proper processing and metallization. These cells, though not economically viable in 2024 as a stand-alone cell, could be integrated with a wide-bandgap top solar cell to form a two-junction tandem cell that could be viable under certain circumstances. This is because the bottom cell of a 30%, two-terminal tandem only needs to be a 20% cell under one-sun conditions. Thus, the DWP could be an ideal low-cost wafer for tandems. The project also revealed that a TOPCon type cell could be formed on a p-type DWP wafer using a P-diffused emitter and a p-type poly-Si contact. In fact, the p-type version of the poly-Si contact out-performed the n-type version for a variety of wafer resistivities, from highly doped to lowly doped. This curiosity requires more work to understand because on Cz wafers, the n-type poly-Si contact is of much higher quality than the p-type version.

14 SOLAR ENERGY↗
DOE OSTI2025

Characterization of Performance Degradation Mechanisms in Low-Cost High Throughput DI-O3 Layer for Passivated Contact Silicon Solar Cells

Characterization and mitigating performance limiting defects in Silicon (Si) PV is one of key areas to be addressed to improve PV hardware costs and energy yield in order to lower the levelized cost of energy (LCOE) of installed PV cost to $0.02/kWh. As Si PV cells efficiencies have surpassed 22% and approaching 23%, the recombination at the metal contacts have become the focus point to be addressed. Passivated contact technologies—having a heterojunction with a band-gap larger than silicon between the metal and silicon—have emerged as a great potential for future highand ultrahigh-efficiency solar cells, as it concurrently reduces recombination and increases carrier selectivity, by incorporating thin films within the contact structure. Passivated contact Si solar cell technologies use a wide variety of tunnel layers—playing a crucial role to passivate metal contacts and tunnel charge carriers—including stoichiometric silicon oxide (SiO 2 ) grown by thermal oxidation and Low-Pressure Chemical Vapor Deposition (LPCVD) technique and silicon oxide (SiO x ) by hot nitric acid. However, thorough investigations on understanding the failure and performance degradation mechanisms associated with tunnel layers are still limited to date. Unlocking those degradation characteristics in crucial tunnel layers could improve the reliability and energy yield of passivated contact Si solar cells. Besides, the technique of growing aforementioned tunneling layers are low throughput, and requires high temperature processes and/or a vacuum environment. In this project, we investigated the performance degradation mechanisms of a low-cost high-throughput ozonated oxide (DI-O 3 ) tunnel layer for the passivated contact Si solar cells.

14 SOLAR ENERGY↗
DOE OSTI2023

The Origin of Anomalous Density Behavior of Silica Glass

The anomalous density–temperature relationship of vitreous silica with low hydroxyl content is explained by the formation of medium-range ordering structure in the glass transition process. The ordered medium-range structure has the shape of a “nanoflake” and consists of two layers of SiO 4 tetrahedra, bonded by O atoms located in the middle of the structure. The nanoflakes interact with their surrounding structures through both covalent chemical bonds and van der Waals bonds. In the formation of the van der Waals bonds, the orientation of SiO 4 tetrahedra can change, which results in an increase in distance between the nanoflakes and their surrounding structures. Thus, there is a slight volume enlargement associated with the formation of nanoflakes. Since the nanoflakes’ formation starts at a temperature near 1480 °C, and the population of the nanoflakes grows continuously as temperature decreases until about 950 °C, the bulk volume of silica glass increases in the temperature range from about 1480 °C to 950 °C. Therefore, the density anomaly of silica glass can be explained as a byproduct of forming of medium-range ordering structure in the silica glass transition.

36 MATERIALS SCIENCE↗
DOE OSTI2020

The Viscosity and Atomic Structure of Volatile-Bearing Melilititic Melts at High Pressure and Temperature and the Transport of Deep Carbon

Understanding the viscosity of mantle-derived magmas is needed to model their migration mechanisms and ascent rate from the source rock to the surface. High pressure–temperature experimental data are now available on the viscosity of synthetic melts, pure carbonatitic to carbonate–silicate compositions, anhydrous basalts, dacites and rhyolites. However, the viscosity of volatile-bearing melilititic melts, among the most plausible carriers of deep carbon, has not been investigated. In this study, we experimentally determined the viscosity of synthetic liquids with ~31 and ~39 wt% SiO 2 , 1.60 and 1.42 wt% CO 2 and 5.7 and 1 wt% H 2 O, respectively, at pressures from 1 to 4.7 GPa and temperatures between 1265 and 1755 °C, using the falling-sphere technique combined with in situ X-ray radiography. Our results show viscosities between 0.1044 and 2.1221 Pa·s, with a clear dependence on temperature and SiO 2 content. The atomic structure of both melt compositions was also determined at high pressure and temperature, using in situ multi-angle energy-dispersive X-ray diffraction supported by ex situ microFTIR and microRaman spectroscopic measurements. Our results yield evidence that the T–T and T–O (T = Si,Al) interatomic distances of ultrabasic melts are higher than those for basaltic melts known from similar recent studies. Based on our experimental data, melilititic melts are expected to migrate at a rate ~from 2 to 57 km·yr -1 in the present-day or the Archaean mantle, respectively.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Modeling and Design Parameter Optimization to Improve the Sensitivity of a Bimorph Polysilicon-Based MEMS Sensor for Helium Detection

Helium is integral in several industries, including nuclear waste management and semiconductors. Thus, developing a sensing method for detecting helium is essential to ensure the proper operation of such facilities. Several approaches can be used for helium detection, including based on the high thermal conductivity of helium, which is several times higher than air. This work utilizes the high thermal conductivity of helium to design and analyze a bimorph MEMS sensor for helium sensing applications. COMSOL Multiphysics software (version 6.2) is used to carry out this investigation. The sensor is constructed from poly-silicon and SiO 2 materials with a trenched cantilever beam configuration. The sensor is electrically heated, and its morphed displacement depends on the surrounding gas’s composition, which decreases in the presence of helium. Several factors were investigated to probe their effect on the sensor’s sensitivity to helium, including the thickness of the poly-silicon layer, the configuration of the trench, and the thickness and location of SiO 2 layer. The simulations showed that the best performance, up to 2 ppm helium detection level, can be achieved with thinner beams and medium trench lengths.

47 OTHER INSTRUMENTATION↗
NASA NTRS1974

Detection of the J = 1 to 0 rotational transition of vibrationally excited silicon monoxide

The v = 1,J = 1 to 0 rotational transition of SiO at 43.1 GHz has been detected in the direction of Becklin's star in the Orion Nebula, and in the M-type star W Hya. In Orion two velocity components are observed, one (the stronger) at a radial velocity of 17 km/sec, the other at -7 km/sec; in W Hya a single line is observed at 39 km/sec. In each case a line at the same radial velocity has been observed at 86.2 GHz in the v = 1,J = 2 to 1 transition, so that the presence of vibrationally excited SiO would seem to be confirmed beyond a reasonable doubt. In the v = 1 state, the photon fluxes of the J = 2 to 1 and 1 to 0 transitions are about equal, suggesting saturated masers occupying the same region of space.

Thaddeus, P.↗
NASA NTRS1975

Irradiation and measurements of fluorinated ethylene-propylene-A on silicon solar cells in vacuum

Silicon monoxide (SiO) coated silicon solar cells covered with fluorinated ethylene-propylene-A (FEP-A) were irradiated by 1-MeV electrons in vacuum. The effect of irradiation on the light transmittance of FEP-A was checked by measuring the short-circuit current of the cells while in vacuum after each dose increment, immediately after the irradiation, and again after a minimum elapsed time of 16 hr. The results indicated no apparent loss in transmission due to irradiation of FEP-A and no delamination from the SiO surface while the cells were in vacuum, but embrittlement of FEP-A occurred at the accumulated dose.

Marsik, S. J.↗
NASA NTRS1974

The silicon monoxide radical and the atmosphere of alpha Orionis

We present new molecular constants, line positions, and transition probabilities for the first-overtone vibration-rotation bands in the X 1 Sigma+ electronic ground state of SiO, together with an estimate of the SiO abundance and silicon isotope ratios in the atmosphere of alpha Ori.

Beer, R.↗
NASA NTRS1975

Is there a maser in the silicon monoxide ground state

Observations are reported of weak emission from the ground vibrational state of SiO in the Orion molecular cloud. It is shown that this emission has a rather smooth low-intensity profile extending over a large velocity range and is present at velocities where maser emissions from the first and second vibrational states are absent. Based on this difference, the present emission is interpreted as thermal emission in the ground state in regions where there is insufficient excitation to produce the vibrationally excited masers. Possible origins are considered for the Orion SiO maser, and it is noted that only VY CMa shows a profile that could be interpreted as ground-state maser emission.

Buhl, D.↗
NASA NTRS1978

New silicon monoxide masers

Seven Mira variable stars with silicon monoxide maser emission have been found. All are later than M4 and heavily reddened. Two were observed near maximum light. One, Y Cas, seems to bear out the correlation of 43-GHz SiO maser luminosity and mean spectral type at maximum light. RT Aql, however, falls about 1 mag below the expected brightness. A catalog of SiO maser stars is given.

Dickinson, D. F.↗
NASA NTRS1978

Spectral studies of SiCl4 + N2O + Ar and SiH4 + Ar mixtures in a shock tube in 160-550 nm range

Gases containing SiO, SiO2, SiH, and Si2 were produced in the reflected-shock region of a shock tube by heating SiCl4 + N2O + Ar and SiH4 + Ar mixtures with shock waves. Spectral absorption characteristics were measured in the 160-550 nm wavelength range and in the 2800-3600 K temperature range and compared to calculated values. The sums of the squares of electronic transition moments at equilibrium separation were derived. It was found that absorption by SiO2 and other known bands of SiO, SiH, and Si2 were too weak to be measured. The cross section of absorption by a continuum, believed due to SiH, varied from 2.5 x 10 to the -17th sq cm at 280 nm to 1.6 x 10 to the -18th sq cm at 440 nm.

Park, C.↗
NASA NTRS1980

Properties of various silicon oxide phases in thin films

Layers of SiO2 with reproducible properties can be manufactured relatively easily today. In the case of SiO and Si2O3 layers, it is necessary to carefully check all of the manufacturing parameters for producing layers with reproducible properties. The properties of the layers in the case of SiO2 do conform to expectations. In the case of Si2O3 and SiO, they can be understood at least qualitatively. Additional interesting models are available for a quantitative understanding.

Ritter, E.↗