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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 433 records · Page 24
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Performance of Hughes GaAs concentrator cells under 1-MeV electron irradiation

Several Hughes gallium arsenide (GaAs) concentrator cells were exposed to 1-MeV electrons at fluences up to 1x10 to the 15th power electrons/sq cm. Performance data were taken after several fluences, at two temperatures, and at concentration levels from 1 to approx. 150x AMO. Data at 1 sun and 25 deg C were taken with an X-25 xenon-lamp solar simulator. Data at concentration were taken using a pulsed solar simulator with the assumption of a linear relationship between short-circuit current and irradiance. The cells are 5 by 5 mm with a 4-mm diameter illuminated area.

Curtis, H. B.↗
NASA NTRS1985

Thermal stress cycling of GaAs solar cells

A thermal cycling experiment was performed on GaAs solar cells to establish the electrical and structural integrity of these cells under the temperature conditions of a simulated low-Earth orbit of 3-year duration. Thirty single junction GaAs cells were obtained and tests were performed to establish the beginning-of-life characteristics of these cells. The tests consisted of cell I-V power output curves, from which were obtained short-circuit current, open circuit voltage, fill factor, and cell efficiency, and optical micrographs, spectral response, and ion microprobe mass analysis (IMMA) depth profiles on both the front surfaces and the front metallic contacts of the cells. Following 5,000 thermal cycles, the performance of the cells was reexamined in addition to any factors which might contribute to performance degradation. It is established that, after 5,000 thermal cycles, the cells retain their power output with no loss of structural integrity or change in physical appearance.

Janousek, B. K.↗
NASA NTRS1986

A general numerical analysis program for the superconducting quasiparticle mixer

A user-oriented computer program SISCAP (SIS Computer Analysis Program) for analyzing SIS mixers is described. The program allows arbitrary impedance terminations to be specified at all LO harmonics and sideband frequencies. It is therefore able to treat a much more general class of SIS mixers than the widely used three-frequency analysis, for which the harmonics are assumed to be short-circuited. An additional program, GETCHI, provides the necessary input data to program SISCAP. The SISCAP program performs a nonlinear analysis to determine the SIS junction voltage waveform produced by the local oscillator. The quantum theory of mixing is used in its most general form, treating the large signal properties of the mixer in the time domain. A small signal linear analysis is then used to find the conversion loss and port impedances. The noise analysis includes thermal noise from the termination resistances and shot noise from the periodic LO current. Quantum noise is not considered. Many aspects of the program have been adequately verified and found accurate.

Hicks, R. G.↗
NASA NTRS1985

Heavy doping considerations and measurements in high-efficiency cells

Theoretical work on heavily doped silicon was described. Heavily doped polysilicon was used as a back-surface passivant replacing the usual back-surface field (BSF). Very good first results were achieved and there is the promise of a simple, low temperature deposition process. Short-circuit current-decay measurement methods were also covered.

Lindholm, F.↗
NASA NTRS1985

Amorphous-silicon module hot-spot testing

Hot spot heating occurs when cell short-circuit current is lower than string operating current. Amorphous cell hot spot are tested to develop the techniques required for performing reverse bias testing of amorphous cells. Also, to quantify the response of amorphous cells to reverse biasing. Guidelines are developed from testing for reducing hot spot susceptibility of amorphous modules and to develop a qualification test for hot spot testing of amorphous modules. It is concluded that amorphous cells undergo hot spot heating similarly to crystalline cells. Comparison of results obtained with submodules versus actual modules indicate heating levels lower in actual modules. Module design must address hot spot testing and hot spot qualification test conducted on modules showed no instabilities and minor cell erosion.

Gonzalez, C. C.↗
NASA NTRS1986

An IBM PC-based math model for space station solar array simulation

This report discusses and documents the design, development, and verification of a microcomputer-based solar cell math model for simulating the Space Station's solar array Initial Operational Capability (IOC) reference configuration. The array model is developed utilizing a linear solar cell dc math model requiring only five input parameters: short circuit current, open circuit voltage, maximum power voltage, maximum power current, and orbit inclination. The accuracy of this model is investigated using actual solar array on orbit electrical data derived from the Solar Array Flight Experiment/Dynamic Augmentation Experiment (SAFE/DAE), conducted during the STS-41D mission. This simulator provides real-time simulated performance data during the steady state portion of the Space Station orbit (i.e., array fully exposed to sunlight). Eclipse to sunlight transients and shadowing effects are not included in the analysis, but are discussed briefly. Integrating the Solar Array Simulator (SAS) into the Power Management and Distribution (PMAD) subsystem is also discussed.

Emanuel, E. M.↗
NASA NTRS1985

Dual-band microstrip antennas with monolithic reactive loading

The design and experimental measurement of a dual-band, monolithic microstrip antenna is presented. The structure utilises a short-circuited length of microstrip transmission line to provide reactive loading and, thereby, retains the low-profile characteristic of a normal microstrip patch radiator.

Davidson, S. E.↗
NASA NTRS1985

Generalized reciprocity theorem for semiconductor devices

A reciprocity theorem is presented that relates the short-circuit current of a device, induced by a carrier generation source, to the minority-carrier Fermi level in the dark. The basic relation is general under low injection. It holds for three-dimensional devices with position dependent parameters (energy gap, electron affinity, mobility, etc.), and for transient or steady-state conditions. This theorem allows calculation of the internal quantum efficiency of a solar cell by using the analysis of the device in the dark. Other applications could involve measurements of various device parameters, interfacial surface recombination velocity at a polcrystalline silicon emitter contact, for rexample, by using steady-state or transient photon or mass-particle radiation.

Misiakos, K.↗
NASA NTRS1987

Diode Structure for Microwave and Infrared Applications

Microwave signals switched or modulated optically. Planar diode with transparent cathode made in BaAs, Si, and InSb versions. Depending on specific configuration and material, such diode used for optical modulation of microwave signal or as infrared detector. Transparent cathode fabricated on GaAs diode so diode illuminates to generate and control short-circuit current.

Alcorn, George↗
NASA NTRS1986

A high reliability battery management system

Over a period of some 5 years Canadian Astronautics Limited (CAL) has developed a system to autonomously manage, and thus prolong the life of, secondary storage batteries. During the development, the system was aimed at the space vehicle application using nickel cadmium batteries, but is expected to be able to enhance the life and performance of any rechargeable electrochemical couple. The system handles the cells of a battery individually and thus avoids the problems of over, and under, drive that inevitably occur in a battery of cells managed by an averaging system. This individual handling also allow cells to be totally bypassed in the event of failure, thus avoiding the losses associated with low capacity, partial short circuit, and the catastrophe of open circuit. The system has an optional capability of managing redundant batteries simultaneously, adding the advantage of on line reconditioning of one battery, while the other maintains the energy storage capability of the overall system. As developed, the system contains a dedicated, redundant, microprocessor, but the capability exists to have this computing capability time shared, or remote, and operating through a data link. As adjuncts to the basic management system CAL has developed high efficiency, polyphase, power regulators for charge and discharge power conditioning.

Moody, M. H.↗
NASA NTRS1985

Heavy doping effects in high efficiency silicon solar cells

The use of a (silicon)/(heavily doped polysilicon)/(metal) structure to replace the conventional high-low junction (or back-surface-field, BSF) structure of silicon solar cells was examined. The results of an experimental study designed to explore both qualitatively and quantitatively the mechanism of the improved current gain in bipolar transistors with polysilicon emitter contact are presented. A reciprocity theorem is presented that relates the short circuit current of a device, induced by a carrier generation source, to the minority carrier Fermi level in the dark. A method for accurate measurement of minority-carrier diffusion coefficients in silicon is described.

Lindholm, F. A.↗
NASA NTRS1987

A V-grooved AlGaAs/GaAs passivated PN junction

A passivated, V-grooved GaAs solar cell offers important advantages in terms of improved optical coupling, higher short circuit current, and increased tolerance to particle radiation when compared to the planar cell configuration. An AlGaAs epilayer has been deposited on a p-type GaAs epilayer grown on an n-type V-grooved GaAs surface using MOCVD. A wet chemical etching process was used to produce a V-pattern with a 7.0 micron periodicity. Reflectivity measurements substantiate the expected decrease in solar reflectance. Scanning electron microscopy techniques were used to confirm the presence of the AlGaAs layer and verify the existence of a pn junction.

Bailey, Sheila G.↗
NASA NTRS1987

Concentrator hot-spot testing, phase 1

Results of a study to determine the hot-spot susceptibility of concentrator cells, to provide a hot-spot qualification test for concentrator modules, and to provide guidelines for reducing hot-spot susceptibility are presented. Hot-spot heating occurs in a photovoltaic module when the short-circuit current of a cell is lower than the string operating current forcing the cell into reverse bias with a concurrent power dissipation. Although the basis for the concentrator module hot-spot qualification test is the test developed for flat-plate modules, issues, such as providing cell illumination, introduce additional complexities into the testing procedure. The same general guidelines apply for protecting concentrator modules from hot-spot stressing as apply to flat-plate modules. Therefore, recommendations are made on the number of bypass diodes required per given number of series cells per module or source circuit. In addition, a new method for determining the cell temperature in the laboratory or in the field is discussed.

Gonzalez, C. C.↗
NASA NTRS1985

Superstructures and multijunction cells for high efficiency energy conversion

Potential applications of superlattices to photovoltaic structures are discussed. A single-bandgap, multijunction cell with selective electrodes for lateral transport of collected carriers is proposed. The concept is based on similar doping superlattice (NIPI) structures. Computer simulations show that by reducing bulk recombination losses, the spectral response of such cells is enhanced, particularly for poor quality materials with short diffusion lengths. Dark current contributions of additional junctions result in a trade-off between short-circuit current and open-circuit voltage as the number of layers is increased. One or two extra junctions appear to be optimal.

Wagner, M.↗
NASA NTRS1985

Performance of GaAs and silicon concentrator cells under 1 MeV electron irradiation

Gallium arsenide concentrator cells from three sources and silicon concentrator cells from one source were exposed to 1 MeV electrons at fluences up to 1 x 10 to the 15th electrons per square cm. Performance data were taken after several fluences, at two temperatures (25 and 80 C), and at concentration levels from 1 to about 150X AM0. Data at one sun and 25 C were taken with an X-25 xenon lamp solar simulator. Data at concentrations were taken using a pulsed solar simulator with the assumption of a linear relationship between short-circuit current and irradiance. The cells are 5 mm x 5 mm with a 4 mm diameter illuminated area.

Curtis, H. B.↗
NASA NTRS1986

Formation of a pn junction on an anisotropically etched GaAs surface using metalorganic chemical vapor deposition

A continuous p-type GaAs epilayer has been deposited on an n-type sawtooth GaAs surface using MOCVD. A wet chemical etching process was used to expose the intersecting (111)Ga and (-1 -1 1)Ga planes with 6-micron periodicity. Charge-collection microscopy was used to verify the presence of the pn junction thus formed and to measure its depth. The ultimate goal of this work is to fabricate a V-groove GaAs cell with improved absorptivity, high short-circuit current, and tolerance to particle radiation.

Leon, R. P.↗
NASA NTRS1987

Preliminary results on CuInSe2/ZnSe solar cells using reactively sputter-deposited ZnSe

In this paper preliminary results on CuInSe2/ZnSe thin film heterojunction photovoltaic devices are presented. High-conductivity ZnSe films were reactively sutter-deposited onto CuInSe2 films and overcoated with ZnO to reduce the sheet resistance. The highest short-circuit current density, as determined from a spectral response weighted for air mass 1.5 global insolation, was 37.4 mA/sq cm. The highest pen-circuit voltage observed was 430 mV.

Nouhi, A.↗
NASA NTRS1987

The solar wind-magnetosphere-ionosphere current-voltage relationship

The global current-voltage relationship for the solar wind-magnetosphere-ionosphere system (SW-M-I) is investigated, restricting the study to strong southward IMF. The dynamo presently identified is on open field lines, and it operates at close to short circuit and at a fraction of the available power output. Control of the dynamo by ionospheric conductivity is discussed. Implications of the simulation results, including the relationship between open and closed field dynamos, the effect of solar wind conditions, the control of reconnection on the bow, the size of the open field line region, and the effects of increased auroral conductivity, are discussed.

Fedder, J. A.↗