Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “SILICONES”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 433 records · Page 24
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

Process feasibility study in support of silicon material, task 1

Analyses of process system properties were continued for materials involved in the alternate processes under consideration for semiconductor silicon. Primary efforts centered on physical and thermodynamic property data for dichlorosilane. The following property data are reported for dichlorosilane which is involved in processing operations for solar cell grade silicon: critical temperature, critical pressure, critical volume, critical density, acentric factor, vapor pressure, heat of vaporization, gas heat capacity, liquid heat capacity and density. Work was initiated on the assembly of a system to prepare binary gas mixtures of known proportions and to measure the thermal conductivity of these mixtures between 30 and 350 C. The binary gas mixtures include silicon source material such as silanes and halogenated silanes which are used in the production of semiconductor silicon.

Li, K. Y.↗
NASA NTRS1979

Quantitative Analysis of Defects in Silicon

The evaluation and prediction of the conversion efficiency for a variety of silicon samples with differences in structural defects, such as grain boundaries, twin boundaries, precipitate particles, dislocations, etc. are discussed. Quantitative characterization of these structural defects, which were revealed by etching the surface of silicon samples, is performed by using an image analyzer. Due to different crystal growth and fabrication techniques the various types of silicon contain a variety of trace impurity elements and structural defects. The two most important criteria in evaluating the various silicon types for solar cell applications are cost and conversion efficiency.

Natesh, R.↗
NASA NTRS1979

High-energy electron-induced damage production at room temperature in aluminum-doped silicon

DLTS and EPR measurements are reported on aluminum-doped silicon that was irradiated at room temperature with high-energy electrons. Comparisons are made to comparable experiments on boron-doped silicon. Many of the same defects observed in boron-doped silicon are also observed in aluminum-doped silicon, but several others were not observed, including the aluminum interstitial and aluminum-associated defects. Damage production modeling, including the dependence on aluminum concentration, is presented.

Corbett, J. W.↗
NASA NTRS1978

Response of defects to illumination in silicon solar cells

The enhancement of diffusion length with intensity was examined using spectral response measurements in solar cells based on Silso silicon and EFG silicon ribbon. Local diffusion length variations at defect sites were investigated as a function of illumination level using a scanning electron microscope operated in the electron beam induced current mode. An increase of diffusion length was observed at defect sites as the intensity level was increased. The diffusion length improvements are explained on the basis of saturation of minority carrier traps in these materials. The trap distribution in Silso silicon is shown to be peaked near (Ec - 0.7)eV. EFG silicon ribbon shows a broad, Gaussian distribution of traps located near (Ec - 0.5)eV.

Hari Rao, C. V.↗
NASA NTRS1979

Silicon Solar Cell Process Development, Fabrication and Analysis, Phase 1

Solar cells from RTR ribbons, EFG (RF and RH) ribbons, dendritic webs, Silso wafers, cast silicon by HEM, silicon on ceramic, and continuous Czochralski ingots were fabricated using a standard process typical of those used currently in the silicon solar cell industry. Back surface field (BSF) processing and other process modifications were included to give preliminary indications of possible improved performance. The parameters measured included open circuit voltage, short circuit current, curve fill factor, and conversion efficiency (all taken under AM0 illumination). Also measured for typical cells were spectral response, dark I-V characteristics, minority carrier diffusion length, and photoresponse by fine light spot scanning. the results were compared to the properties of cells made from conventional single crystalline Czochralski silicon with an emphasis on statistical evaluation. Limited efforts were made to identify growth defects which will influence solar cell performance.

Yoo, H. I.↗
NASA NTRS1979

Method of purifying metallurgical grade silicon employing reduced pressure atmospheric control

A method in which a quartz tube is charged with chunks of metallurgical grade silicon and/or a mixture of such chunks and high purity quartz sand, and impurities from a class including aluminum, boron, as well as certain transition metals including nickel, iron, and manganese is described. The tube is then evacuated and heated to a temperature within a range of 800 C to 1400 C. A stream of gas comprising a reactant, such as silicon tetrafluoride, is continuously delivered at low pressures through the charge for causing a metathetical reaction of impurities of the silicon and the reactant to occur for forming a volatile halide and leaving a residue of silicon of an improved purity. The reactant which included carbon monoxide gas and impurities such as iron and nickel react to form volatile carbonyls.

Ingle, W. M.↗
NASA NTRS1980

Dynamic Modulus and Damping of Boron, Silicon Carbide, and Alumina Fibers

The dynamic modulus and damping capacity for boron, silicon carbide, and silicon carbide coated boron fibers were measured from-190 to 800 C. The single fiber vibration test also allowed measurement of transverse thermal conductivity for the silicon carbide fibers. Temperature dependent damping capacity data for alumina fibers were calculated from axial damping results for alumina-aluminum composites. The dynamics fiber data indicate essentially elastic behavior for both the silicon carbide and alumina fibers. In contrast, the boron based fibers are strongly anelastic, displaying frequency dependent moduli and very high microstructural damping. Ths single fiber damping results were compared with composite damping data in order to investigate the practical and basic effects of employing the four fiber types as reinforcement for aluminum and titanium matrices.

Dicarlo, J. A.↗
NASA NTRS1979

Structure of deformed silicon and implications for low-cost solar cells

The paper reports on an investigation of the microstructure and minority carrier lifetime of silicon in uniaxially compressed silicon samples, the objective of which was to determine if it is feasible to produce silicon solar cells from sheet formed by high temperature deformation. It is reported that recrystallization was found to be incomplete in both fine and large grained materials, and that the major mode of recrystallization appears to be migration of existing boundaries into the deformed regions. Also, minority carrier diffusion length was found to be drastically reduced after deformation, perhaps due to contamination or cooling rate, and recovered only slightly with annealing. It is concluded that these results suggest that high temperature deformation of silicon for direct production of sheet for high efficiency solar cells is not practical. It is noted that potential may exist for its use as a coarse grained substrate.

Mardesich, N.↗
NASA NTRS1980

Nitridation of silicon /111/ - Auger and LEED results

Clean silicon (111) (7x7) surfaces at up to 1050 C have been reacted with nitrogen ions and neutrals produced by a low energy ion gun. The LEED patterns observed are similar to those previously reported for reaction of silicon (111) (7x7) with NH3. The nitrogen KLL peak exhibits no shift or change in shape with nitride growth. At the same time the magnitude of the elemental silicon LVV peak at 92 eV decreases progressively as a new peak at 84 eV increases. The position of both peaks appears to be independent of the degree of nitridation. Since the Auger spectra are free of oxygen and other impurities, these features can be attributed only to silicon, nitrogen, and their reaction products. Characteristic features of the Auger spectra are related to LEED observations and to the growth of microcrystals of Si3N4.

Delord, J. F.↗
NASA NTRS1980

Dynamic modulus and damping of boron, silicon carbide, and alumina fibers

The dynamic modulus and damping capacity for boron, silicon carbide, and silicon carbide-coated boron fibers were measured from -190 to 800 C. The single fiber vibration test also allowed measurement of transverse thermal conductivity for the silicon carbide fibers. Temperature-dependent damping capacity data for alumina fibers were calculated from axial damping results for alumina-aluminum composites. The dynamic fiber data indicate essentially elastic behavior for both the silicon carbide and alumina fibers. In contrast, the boron-based fibers are strongly anelastic, displaying frequency-dependent moduli and very high microstructural damping. The single fiber damping results were compared with composite damping data in order to investigate the practical and basic effects of employing the four fiber types as reinforcement for aluminum and titanium matrices.

Dicarlo, J. A.↗
NASA NTRS1980

Effect of silicone oil on solid propellant combustion in small motors

The feasibility of reducing troublesome nozzle blockage (by condensation deposits) in laboratory-scale solid rockets by addition of a silicone oil as a propellant ingredient was explored experimentally. An aluminized composite propellant and its counterpart with 1% silicone oil replacing part of the binder were fired in a 63.5 mm diameter, end-burning, all-metal burner. Pressure-time histories were recorded for all of the tests by a Taber gauge mounted at the downstream end of the chamber; temperature-time data at the nozzle throat were obtained in some of the runs by thermocouples having junctions positioned at the wall but insulated from the metal. Deposition of condensables on the nozzle walls causing a progressive increase in the chamber pressure with time was noted. The fraction of firings exhibiting practically no condensation was 59% with silicone and 32% without. On the average, temperature readings at the nozzle throat were higher with the silicone propellants. Although various phenomena may contribute to these findings, the results are not understood completely.

Ramohalli, K.↗
NASA NTRS1982

Ceramic for Silicon-Shaping Dies

Silicon beryllium oxynitride (SiBON) is a promising candidate material for manufacture of shaping dies used in fabricating ribbons or sheets of silicon. It is extremely stable, resists thermal shock, and has excellent resistance to molten silicon. SiBON is a solid solution of beryllium silicate in beta-silicon nitride.

Sekercioglu, I.↗
NASA NTRS1981

Process for purification of silicon

The purification of metallurgically pure silicon having a silicon content of more than 95% by weight is accomplished by leaching with an acidic solution which substantially does not attack silicon. A mechanical treatment leading to continuous particle size reduction of the granulated silicon to be purified is combined with the chemical purification step.

Rath, H. J.↗
NASA NTRS1980

Tribological properties of silicon carbide in metal removal process

This paper reviews material properties of adhesion, friction and wear of single-crystal silicon carbide in contact with metals and alloys involved in a metal removal process such as grinding. The tribological properties in the metal removal processes are divided into properties which remove metal by adhesion between sliding surfaces, and metal removal by silicon carbide sliding against a metal, indenting it, and plowing a series of grooves or furrows. The paper also deals with fracture and deformation characteristics of the silicon carbide surface; the adhesion, friction and metal transfer to silicon carbide is related to the relative chemical activity of the metals. Atomic size and content of alloying elements play a dominant role in controlling adhesion and friction properties of alloys. The friction and abrasive wear decrease as the shear strength of the bulk metal increases.

Miyoshi, K.↗
NASA NTRS1980

Development of processes for the production of low cost silicon dendritic web for solar cells

High area output rates and continuous, automated growth are two key technical requirements for the growth of low-cost silicon ribbons for solar cells. By means of computer-aided furnace design, silicon dendritic web output rates as high as 27 sq cm/min have been achieved, a value in excess of that projected to meet a $0.50 per peak watt solar array manufacturing cost. The feasibility of simultaneous web growth while the melt is replenished with pelletized silicon has also been demonstrated. This step is an important precursor to the development of an automated growth system. Solar cells made on the replenished material were just as efficient as devices fabricated on typical webs grown without replenishment. Moreover, web cells made on a less-refined, pelletized polycrystalline silicon synthesized by the Battelle process yielded efficiencies up to 13% (AM1).

Duncan, C. S.↗
NASA NTRS1980

A base-metal conductor system for silicon solar cells

Solder, copper, and silver are evaluated as conductor layer metals for silicon solar cell metallization on the basis of metal price stability and reliability under operating conditions. Due to its properties and cost, copper becomes an attractive candidate for the conductor layer. It is shown that nickel operates as an excellent diffusion barrier between copper and silicon while simultaneously serving as an electrical contact and mechanical contact to silicon. The nickel-copper system may be applied to the silicon by plating techniques utilizing a variety of plating bath compositions. Solar cells having excellent current-voltage characteristics are fabricated to demonstrate the nickel-copper metallization system.

Coleman, M. G.↗
NASA NTRS1982

Extracting Silicon From Sodium-Process Products

New acid leaching process purifies silicon produced in reaction between silicon fluoride and sodium. Concentration of sodium fluoride and other impurities and byproducts remaining in silicon are within acceptable ranges for semi-conductor devices. Leaching process makes sodium reduction process more attractive for making large quantities of silicon for solar cells.

Kapur, V.↗
NASA NTRS1982

Solar Cells From Metallurgical-Grade Silicon

Epitaxial deposition produces acceptable solar cells from metallurgicalgrade silicon. Instead of diffusing dopants into silicon to form pn junction, junction is formed by growing epitaxial layer--one having crystal structure continuous with that of substrate--on metallurgical-grade silicon. Less pure forms of silicon, such as metallurgical-grade, are less expensive than semiconductor-grade material and help to lower cost of solar cells.

Daiello, R. V.↗