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At least 433 records · Page 24
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

MOCVD growth of Si-doped α-(AlGa) 2 O 3 on m-plane α-Al 2 O 3 substrates

We reported the growth of (AlGa) 2 O 3 layers on ($10\overline{10}$) α-Al 2 O 3 substrates using cold-wall metalorganic chemical vapor deposition, and the electrical characterization of Si-doped (AlGa) 2 O 3 layers. In the Ga 2 O 3 growth, the α phase was dominant at low growth temperature, achieving the growth rate of 2.4 μm h –1 at 650 °C. Sheet resistance and electrical conductivity of the Ga 2 O 3 layers with a Si concentration of 3 × 10 20 cm –3 were 1 × 10 4 Ω/square and 8.3 S cm –1 , respectively, at the measurement temperature of 500 °C. The Al composition in the (AlGa) 2 O 3 layers was controlled from 0% to 74%. In our initial attempts, we obtained electrically conductive α-(AlGa) 2 O 3 layers by Si doping (2 × 10 –9 S cm –1 in the sample with an Al composition of 56%). Finally, hybrid functional calculations suggest the conductivities are limited by compensation of Si through cation vacancy complexes, and not by the significant amounts of co-incorporated C and N that are predicted to be electrically passivated by hydrogen.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Activity coefficients of siderophile elements in Fe-Si liquids at high pressure

Metallic core formation in differentiated bodies in the inner solar system can take place between low pressures (near 1 bar) to much higher pressures (up to 100 GPa). Most thermodynamic models of metal-silicate equilibria utilise activity coefficients for metallic tracers in Fe liquids, nearly all of which have been carried out at low pressures. This study focuses on the effect of pressure on activity coefficients for Au, P, V, Mn, Ga, Zn, Cd, Sn, W, Pb, and Nb in liquid Fe-Si alloys. From a series of experiments at 10 GPa, 2373 K containing variable Si content in a metallic liquid we have derived epsilon interaction parameters in Fe-Si liquids ($ε^{Si}_{M}$). Comparison of 1 GPa and 10 GPa data shows no difference except for Nb. Epsilon parameters derived from low pressure experiments can thus be used to calculate activity coefficients for application to higher pressure processes (at least to 10 GPa).

58 GEOSCIENCES↗
NASA NTRS1974

Diurnal and seasonal trends in the incidence of Sudden Commencements (SC) and Sudden Impulses SI

Based on world data for the period 1 January 1955 to 31 December 1968, reports of 894 SC cases and 2152 SI cases were collected. A study was made of the diurnal and seasonal trends in the incidence of their appearances. It is shown that the diurnal trend is pronounced for all events with a maximum at (06-8)h universal time. The diurnal trend for SC in the resultant period is more pronounced. The seasonal trend in incidence of appearances of SC and SI is absent. Thus, geomagnetic disturbances of both SC and SI are monitored by world time. These results lead to the conclusion that the presence or absence of SC and SI during geomagnetic storms is determined not only by the nature of the corpuscular flux, the presence of shock waves and tangential discontinuities, but also by purely terrestrial conditions.

Nesmyanovich, E. I.↗
NASA NTRS1975

Interfacial impurities and the reaction between Si and evaporated Al

As commonly formed, the interface between substrate Si and evaporated Al is laden with impurities. Subsequent heating causes modest dissolution of Si into solid Al, the dissolution morphology being influenced by the interface impurities. In the present experiments, the amount of Si dissolving was considerably enhanced, causing sufficient interface movement to carry most interfaces clear of the original impurities. Under these conditions, the Si/Al interface assumes, during brief heat treatment, a simple shape composed of a few 111 plane-type facets. Such Si/Al interfaces produced in situ should be useful for low-temperature solid-state growth of Si.

Best, J. S.↗
NASA NTRS1977

The presence of Si I series in the ultraviolet solar spectrum - 3000 to 1200 A

Laboratory and solar data are presented which form the basis for identifying chromospheric Si I absorption lines in UV rocket spectra of the solar limb. Prints of the Si I laboratory spectrum between 1520 and 1570 A are matched with those of the chromospheric spectrum, and a striking line-to-line coincidence is observed. Individual absorption series of Si I covering the 3p(2), 3P, 1D, and 1S ground terms are tabulated in multiplet form over the wavelength range from 1517 to 3069 A. It is noted that many of the solar lines are blended with both other Si I lines and lines of other spectra.

Moore, C. E.↗
NASA NTRS1983

Transition probability of the Si III 189.2-nm intersystem line

Measurement of the lifetime of the metastable 3s3p(3)P(0)1 level of Si(2+) (Si III), which decays by photon emission at 189.2 nm to the 3s2(1)S0 state, is reported. The data were taken from spontaneous emission from metastable Si III stored in an RF ion trap. The Si III ions were produced through electron bombardment of SiH4 and SiF4 at pressures of 1/100,000,000-1/10,000,000 Torr. A photomultiplier was employed to count the photon emissions from the transitions. A total of 11 decay curves were generated for analysis, with Poisson statistics used to set the uncertainties at within 8 pct. Significant systematic effects were controlled, and the lifetime was found to be within 3.6 microsec of 59.9 microsec. The method used is concluded valid for determining the lifetimes of metastable levels of low-Z ions with low charge, and thereby the transition probabilities.

Kwong, H. S.↗
NASA NTRS1986

Effect of counterions on the formation of ohmic contact between p-Si and poly(pyrrole) film - An ac impedance analysis

Conditions under which poly(pyrrole) (PP) films form ohmic contact with single-crystal p-Si are described. Counterions affect both the conductivity and flatband potential, V(FB), values of poly(pyrrole). While paratoluene-sulfonate-doped PP acts like a switch, the impedance behavior of PP films doped with ClO4(-), BF4(-), or PF6(-) allows evaluation of the V(FB) of these films. The formation of 'quasi-ohmic' and 'nonohmic' contacts, respectively, of PP (ClO4) and PP films doped with other counterions, with p-Si, are explained in terms of conductivity of these films and V(FB) of PP films with respect to that of p-Si. PP film seems to passivate or block intrinsic surface states present on p-Si surface.

Nagsubramanian, G.↗
NASA NTRS1985

Determination of the Si-conducting polymer interfacial properties using A-C impedance techniques

A study was made of the interfacial properties of poly(pyrrole) (PP) deposited electrochemically onto single crystal p-Si surfaces. The interfacial properties are dependent upon the counterions. The formation of 'quasi-ohmic' and 'nonohmic' contacts, respectively, of PP(ClO4) and PP films doped with other counterions (BF4 and para-toluene sulfonate) with p-Si, are explained in terms of the conductivity of these films and the flat band potential, V(fb), of PP relative to that of p-Si. The PP film seems to passivate or block intrinsic surface states present on the p-Si surface. The differences in the impedance behavior of para-toluene sulfonate doped and ClO4 doped PP are compared.

Nagasubramanian, G.↗
NASA NTRS1988

Room-temperature codeposition growth technique for pinhole reduction in epitaxial CoSi2 on Si (111)

A solid-phase epitaxy has been developed for the growth of CoSi2 films on Si (111) with no observable pinholes (1000/sq cm detection limit). The technique utilizes room-temperature codeposition of Co and Si in stoichiometric ratio, followed by the deposition of an amorphous Si capping layer and subsequent in situ annealing at 550-600 C. CoSi2 films grown without the Si cap are found to have pinhole densities of (1-10) x 10 to the 7th/sq cm when annealed at similar temperatures. A CF4 plasma-etching technique was used to increase the visibility of the pinholes in the silicide layer.

Lin, T. L.↗
NASA NTRS1988

Distribution of Si II in the Galactic center

A map of the Galactic center region in the forbidden Si II 34.8-micron line is presented. The line emission arises from within the photodissociation region (PDR) associated with the neutral gas ring surrounding an ionized gas core confined within 2 pc of the Galactic center. Si II is a useful probe of the inner regions of the ring since it is always optically thin. The Si II data, when analyzed in conjunction with O I, C II, and molecular measurements, outlines the transition region between the PDR and the surrounding molecular cloud. The Si II emission is found to extend beyond that of the O II into the neutral gas ring. Although the interpretation is not unique, the data are consistent with a constant gas-phase abundance of silicon within the inner part of the PDR while the gaseous silicon is depleted by molecule formation in the transition region.

Graf, P.↗
NASA NTRS1988

Raman scattering studies of chemical-vapor-deposited cubic SiC films of (100)Si

Raman scattering studies for a series of CVD-grown cubic SiC single-crystal films with film thickness from 600 A to 17 microns are discussed. The results suggest that the crystalline orientations of the Si substrate and the 3C-SiC film are the same. It is found that the Si 522/cm phonon from a Si wafer is enhanced in intensity by a factor of 2-3 due to a CVD overlayer of cubic SiC, and that the 3C-SiC longitudinal optical phonon at the Gamma point from SiC/Si samples is enhanced by a factor of two or three following the removal of the Si substrate. The variation of the Raman spectrum with incident power is investigated, and a method for determining the Raman cross section for 3 C-SiC is proposed.

Feng, Z. C.↗
NASA NTRS1988

Simulation of GaAs cluster formation on GaAs(00-1), AlAs(00-1), Si(001), and As1/Si(001) surfaces

Recently developed semiempirical potential energy functions for the Ga-As-Si and Ga-As-Al systems have been applied here to determine the excess formation energy for GaAs clusters on GaAs(00-1), AlAs(00-1), Si(001), and one atomic layer As-covered Si(001) substrates as a function of cluster size and cluster shape by the Monte Carlo technique. Pyramidal type ledges on the GaAs clusters are found to be the favored ledge for the first three layers while an inverted-pyramidal type ledge is also favored in certain cases for the As1/Si(001) substrate. Cluster formation at ledges is compared with cluster formation on a flat terrace for the Si(001) and the As1/Si(001) substrates.

Choi, D. K.↗
NASA NTRS1989

Heavily boron-doped Si layers grown below 700 C by molecular beam epitaxy using a HBO2 source

Boron doping in Si layers grown by molecular beam epitaxy (MBE) at 500-700 C using an HBO2 source has been studied. The maximum boron concentration without detectable oxygen incorporation for a given substrate temperature and Si growth rate has been determined using secondary-ion mass spectrometry analysis. Boron present in the Si MBE layers grown at 550-700 C was found to be electrically active, independent of the amount of oxygen incorporation. By reducing the Si growth rate, highly boron-doped layers have been grown at 600 C without detectable oxygen incorporation.

Lin, T. L.↗
NASA NTRS1990

Si-Ge-metal ternary phase diagram calculations

Solution crystal growth and doping conditions of Si-Ge alloys used for high-temperature thermoelectric generation are determined here. Liquid-phase epitaxy (LPE) has been successfully employed recently to obtain single-crystalline homogeneous layers of Si-Ge solid solutions from a liquid metal solvent. Knowledge of Si-Ge-metallic solvent ternary phase diagrams is essential for further single-crystal growth development. Consequently, a thermodynamic equilibrium model was used to calculate the phase diagrams of the Si-Ge-M systems, including solid solubilities, where M is Al, Ga, In, Sn, Pb, Sb, or Bi. Good agreement between calculated liquidus and solidus data and experimental DTA and microprobe results was obtained. The results are used to compare the suitability of the different systems for crystal growth (by LPE-type process).

Fleurial, J. P.↗
NASA NTRS1990

Intersubband absorption in Si(1-x)Ge(x/Si superlattices for long wavelength infrared detectors

Researchers calculated the absorption strengths for intersubband transitions in n-type Si(1-x)Ge(x)/Si superlattices. These transitions can be used for the detection of long-wavelength infrared radiation. A significant advantage in Si(1-x)Ge(x)/Si supperlattice detectors is the ability to detect normally incident light; in Ga(1-x)Al(x)As/GaAs superlattices, intersubband absorption is possible only if the incident light contains a polarization component in the growth direction of the superlattice. Researchers present detailed calculation of absorption coefficients, and peak absorption wavelengths for (100), (111) and (110) Si(1-x)Ge(x)/Si superlattices. Peak absorption strengths of about 2000 to 6000 cm(exp -1) were obtained for typical sheet doping concentrations (approx. equals 10(exp 12)cm(exp -2)). Absorption comparable to that in Ga(1-x)Al(x)As/GaAs superlattice detectors, compatibility with existing Si technology, and the ability to detect normally incident light make these devices promising for future applications.

Rajakarunanayake, Yasantha↗
NASA NTRS1992

Electronic structure of light-emitting porous Si

Characterization of light-emitting porous Si films with X-ray photoelectron spectroscopy is reported. Only traces of O are detected on HF-etched samples, in contradiction to an earlier report that oxides are a significant component of porous Si. Si 2p and valence-band measurements demonstrate that the near-surface region of high porosity films which exhibit visible luminescence consists of amorphous Si.

Vasquez, R. P.↗
NASA NTRS1992

Photoluminescence structure, and composition of laterally anodized porous Si

We have studied the photoluminescence (PL), structure, and composition of laterally anodized porous Si. Broad PL peaks were observed centered between about 620-720 nm with strong intensities measured from 500 to 860 nm. Macroscopic variations in PL intensities and peak positions are explained in terms of the structure and anodization process. Structural studies suggest that the PL appears to originate from a multilayered porous Si structure in which the top two layers are amorphous. X-ray diffraction spectra also suggest the presence of a significant amorphous phase. In addition to high concentrations of B and N, we have measured extremely high concentrations much greater than 10 exp 20 cu cm of H, C, O, and F. Our results indicate that laterally anodized porous Si does not fit the crystalline Si quantum wire model prevalent in the literature suggesting that some other structure is responsible for the observed luminescence.

Jung, K. H.↗
NASA NTRS1991

Endotaxial growth of CoSi2 within (111) oriented Si in a molecular beam epitaxy system

A new mode of growth is reported in which buried metallic layers can be fabricated within a single-crystal semiconductor through preferential subsurface growth on previously-grown 'seed' regions. The deposition of Co at 800 C at a rate of 0.01 nm/s on (111) Si substrates containing buried CoSi2 columns 40-100 nm below the Si surface results in the growth and coalescence of these subsurface columns. The formation of a CoSi2 layer on the Si surface is suppressed by this growth mode. It is proposed that the high diffusion rate of Co at 800 C, coupled with the high growth rate of CoSi2 at the subsurface columns, is responsible for this preferred 'endotaxial' growth mode. This growth technique was used to produce a continuous buried single-crystal layer of CoSi2 under a single-crystal Si capping layer.

George, T.↗