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At least 433 records · Page 24

Evaluating the photophysical and photochemical characteristics of green-emitting cerium(III) mono-cyclooctatetraenide complexes

The photophysical and photochemical reactivity of the organometallic mono(cyclooctatetraenide)-Ce(III) complexes: [(C 8 H 8 )Ce(μ-X)(THF) 2 ] 2 X = O 3 SCF 3 - (1), Cl - (2), were studied. Here, in the course of these studies, a new polymorph of [(C 8 H 8 )Ce(μ-O 3 SCF 3 )(THF) 2 ] 2 (1) was described. Photoluminescence (PL) studies of 1 and 2 showed characteristic excitation and emission bands in the visible region, with bright green light emission under light irradiation from states corresponding to the 5d → 4f transition. Complexes 1 and 2 exhibit relatively long lifetime of 205.4 ± 0.2 and 145.8 ± 0.4 ns respectively. And the quantum yields (Φ) for 1 and 2 are 0.180 and 0.068 respectively. Electrochemical studies were performed on complexes 1 and 2 with a reversible Ce(III)/Ce(IV) redox couple recorded at $E_{1/2}$ = -1.53 V versus the Fc/Fc + for 2. Complex 1 shows an irreversible Ce(III/IV) oxidation wave. Complexes 1 and 2 revealed strongly-reducing, estimated, excited state reduction potentials ($E^*_{1/2}$) of -3.31 and -4.02 V versus the Fc/Fc + respectively, with small Stokes shifts of 0.12 eV. With their associated relatively long lifetimes, small Stokes shifts and large, negative $E^*_{1/2}$ values, both complexes were evaluated as potential photosensitisers for halogen atom transfer (XAT) using a test reaction of the dehalogenation of benzyl chloride.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Resonance plasmonic coupling: selective enhancement of band edge emission over trap state emission of CdSe quantum dots

The photoluminescence properties of quantum dots (QDs) are often enhanced by eliminating surface trap states through chemical methods. Alternatively, a physical approach is presented here for improving photoluminescence purity in QDs by employing frequency-specific plasmon resonance coupling. Emitter-bound plasmonic hybrids are designed by electrostatically binding negatively charged QDs in water to positively charged gold nanoparticles having a thin polymer coating. Herein, two types of QDs are used: (i) bare CdSe, which exhibits both band edge and trap state emission, and (ii) CdSe overcoated with a ZnS shell (CdSe/ZnS) devoid of trap state emission. Tuning the extinction spectrum of the plasmonic system to match the band edge emission of CdSe enables the selective enhancement of band edge emission over trap state emission. Excellent match in the extinction spectrum of the gold nanoparticle with both, experimentally calculated photoluminescence enhancement factor and theoretically calculated radiative rate enhancement signifies the role of frequency-specific plasmon resonance coupling. Plasmon-coupled photoluminescence of CdSe/ZnS is further investigated by varying the number density of emitter on the surface of plasmonic nanoparticle. An enhancement in the photoluminescence is observed at a lower emitter density of CdSe/ZnS and the photoluminescence enhancement factor closely follows the plasmon resonance. However, photoluminescence quenching occurs with an increase in CdSe/ZnS due to plasmon-assisted nonradiative energy transfer between nearby QDs, as indicated by a red shift in the PL maximum. These studies establish that resonance plasmonic coupling is a convenient physical strategy for tuning the intrinsic photoluminescence properties of QDs for various optoelectronic applications.

Paul, Livin↗

p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing

We demonstrate p-type activation of GaN doped by Mg ion implantation, and in situ during metalorganic chemical vapor deposition through sequential short-duration gyrotron microwave heating cycles at temperatures of 1200–1350 °C. GaN is implanted with 1019 cm−3 Mg ions, capped with AlN, and annealed under 3 MPa N2 overpressure in 5 s heating cycles for less than 60 s total using a high-power gyrotron microwave heating source. Through I–V characterization, photoluminescence spectroscopy, and Raman spectroscopy, we study the evolution of electrical properties, optically active point defects, and material strain in response to implantation and annealing. For Mg-implanted samples, increasing annealing temperature is characterized by an increase in the PL substitutional Mg-related peak (UVL) relative to the shallow-donor vacancy-related peak (GL2). Through comparison of implanted and in situ doped samples, it is demonstrated that the origin of compensating VN lies primarily in implantation rather than degradation from the annealing process. Transmission line measurements and diode I–V measurements show a sheet resistance of 1083 kΩ/□ and a hole concentration of 1.23 × 1015 cm−3, respectively, in the Mg-implanted material annealed at 1350 °C. We conclude that temperature-cycled gyrotron annealing at 1350 °C decreases implant-induced compensating point defects and activates Mg to obtain selective p-type conduction.

Meyers, V. (ORCID:0000000176731553)↗

Impact of high-dose gamma-ray irradiation on electrical characteristics of N-polar and Ga-polar GaN p–n diodes

We investigate the impact of high-dose gamma-ray irradiation on the electrical performance of Ga-polar and N-polar GaN-based p-n diodes grown by metalorganic chemical vapor deposition. We compare the current density-voltage (J-V), capacitance-voltage (C-V), and circular transfer length method (CTLM) characteristics of the p-n diodes fabricated on Ga-polar and N-polar orientations before and after irradiation. The relative turn-on voltage increases for the Ga-polar diodes with increasing irradiation dose, while it increases initially and then starts to decrease for the N-polar diodes. The p-contact total resistance increases for Ga-polar and decreases for N-polar samples, which we attribute to the formation of point defects and additional Mg activation after irradiation. The J-V characteristics of most of the tested diodes recovered over time, suggesting the changes in the J-V characteristics are temporary and potentially due to metastable occupancy of traps after irradiation. X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) measurements reveal the existence of different types of initial defects and surface electronic states on Ga-polar and N-polar samples. Gallium vacancies (V Ga ) are dominant defects in Ga-polar samples, while nitrogen vacancies (V N ) are dominant in N-polar samples. The presence of a higher concentration of surface states on Ga-polar surfaces compared to N-polar was confirmed by calculating the band bending and the corresponding screening effect due to opposite polarization bound charge and ionized acceptors at the surface. The difference in surface stoichiometry in these two orientations is responsible for the different behavior in electrical characteristics after gamma-ray interactions.

36 MATERIALS SCIENCE↗

Diverse simulations of time-resolved photoluminescence in thin-film solar cells: A SnO 2 /CdSe y Te 1-y case study

Time-resolved photoluminescence (TRPL) is widely used to measure carrier lifetime in thin-film solar cell absorbers. However, the injection dependence of data and frequent non-exponential decay shapes complicate the interpretation. Here, we develop a numerical model to simulate injection-dependent TRPL measurements in a SnO 2 /CdSe y Te 1-y case study solar cell structure, considering parameters of interest to researchers in industry and academia. Previous simulations have shown that, in low injection, excess electrons and holes injected by the laser pulse are rapidly separated in the electric field formed by the pn junction. As a result, at early times, the PL signal can decay faster than the Shockley-Read-Hall lifetime in the absorber bulk (t_bulk). Prior simulations have shown that the charge stored in the junction can slowly leak out to affect decays at late times. However, it has not been clear if and to what degree charge storage can affect the slopes extracted from TRPL decays - t_2 - commonly cited as the TRPL-measured lifetime. Here, we show that charge storage can, in some cases, result in t_2 values that substantially overestimate t_bulk. Previous simulations indicate that high injection conditions can screen the junction field and minimize charge separation. Here, we show that continued injection increases can drive down t_2 below t_bulk as radiative recombination becomes dominant. We catalog charge storage and radiative recombination impacts for a diverse set of material parameters and compare results to double-heterostructure models.

CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS,S↗

Non-Equilibrium Doping of Poly-Si:Ga/SiOx Passivating Contacts Solar Cells

In this contribution, we show that Ga-hyperdoped poly-Si/SiOx contacts are realized by pulsed laser annealing and post-hydrogenation. The motivation behind this work is to improve the inferior performance of boron-doped poly- Si/SiOx contacts when compared to the phosphorus-doped contacts. Here we used Ga as a novel p-type dopant to replace B, as B is known to accumulate at the interface between the oxide and the crystalline silicon and cause recombination. Due to a high diffusivity of Ga in oxide and a much higher segregation coefficient (Si:SiOx), Ga is shown to be immune to the oxide pileup phenomenon. However, Ga has a low solid solubility limit in Si (5x10^19 cm-3), which is not enough to form a low resistivity contact. To overcome this problem, we explored pulsed laser annealing via excimer laser by varying the laser energy densities and pulses. The passivation and electrical properties are studied systematically using photoluminescence (PL), secondary ion mass spectrometry (SIMS), and Van der Pauw-Hall measurements. We show an active Ga doping concentration above 1x10^20 cm^-3, which is above the solid solubility limit of Ga in Si. Good passivation quality is demonstrated with the highest implied Voc (iVoc) of 721 mV on single side polished samples. Furthermore, a low diode contact resistivity of ~22 m..omega.. cm^2 is obtained using Ti/Ag contacts, with minimal metal-to-semiconductor contact resistivity of 0.9 m..omega.. cm^2.

non-equilibrium doping↗

Effect of Mg doping on carrier recombination in GaN

Time-resolved photoluminescence measurements have been performed on Mg-doped GaN for Mg concentrations in the low- to mid-10 19 cm -3 . As-grown and annealed (600–675 °C) samples were studied. In the as-grown samples, the nonradiative carrier lifetime was found to be about 200 ps and nearly independent of the Mg concentration. Upon annealing, the carrier lifetimes shorten to ~150 ps but, again, show little dependence on the annealing temperature. The analysis of possible Shockley–Read–Hall recombination centers and their behavior during doping and annealing suggests that the main nonradiative recombination center is the Mg–nitrogen vacancy complex. The weak dependence of the PL decay times on temperature indicates that carrier capture into this center has a very low potential barrier, and the nonradiative recombination dominates even at low temperatures.

36 MATERIALS SCIENCE↗

Effect of self-generated magnetic fields on x-ray emission in Kr-filled targets at the National Ignition Facility

We examine the effects of self-generated magnetic fields in a Kr gas pipe x-ray source platform. X-ray emission from Kr plasma is dependent on the plasma conditions, as the ionization state is largely a function of temperature. Magnetic fields are known to limit heat conduction, which increases temperature. We show that the emission in simulations of the gas pipe x-ray source is dependent on how self-generated magnetic fields are modeled. The inclusion of self-generated magnetic fields in simulations more accurately captures the emission of lower energy x-ray emission (L-shell), bringing results closer to experiments. The modeled x-ray emission and self-generated magnetic fields are shown to be particularly sensitive to the inclusion of the Nernst effect in simulations. Severely limiting the Nernst effect leads to a hotter Kr plasma, which can account for the discrepancy seen in earlier studies. By modifying the Nernst effect multiplier, we can achieve better experimental agreement in x-ray emission from gas pipes; the value of the multiplier that leads to the best agreement is dependent on the laser power of the drive. Currently, the suppression factor of the Nernst effect needed for high power drives (PL>200 TW) is more restrictive than what is currently put forward by non-local models.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Modifications in the charge trap landscape in Hf 0.5 Zr 0.5 O 2 as a function of oxygen vacancy concentration observed with photoemission electron microscopy

Oxygen vacancies in Hf x Zr (1-x) O 2 (HZO) both contribute to stabilization of the ferroelectric orthorhombic phase and promote leakage pathways that limit the endurance of devices based on the material. Here, for this reason, the defect states of oxygen vacancies were investigated using photoemission electron microscopy (PEEM) and photoluminescence spectroscopy (PL), as their concentration was varied via ex situ laser exposure. Following a controlled oxygen vacancy reduction via visible (2.54 eV) laser dosing of HZO, deep-ultraviolet (DUV, 5.82 eV) PEEM was used to spatially probe the resulting mid-gap defect states and work function. Work function was found to increase monotonically with the laser-induced reduction in oxygen vacancy concentration culminating in a total increase near 70 meV. The change implies a Fermi level shift toward the valence band as the total available electron-filled charge states are reduced with the removal of oxygen vacancies. A reduction in charge states is corroborated by the observed lessening of both photoemission and photoluminescence intensities after laser dosing. The deduced position of the Fermi level is within a band of near-conduction band defect states produced by oxygen vacancies that are linked to endurance limiting leakage currents. Together, these results directly identify the primary role of oxygen vacancies on the defect states in HZO while demonstrating that laser exposure can be used for their modification.

42 ENGINEERING↗

Constraints on early dark energy from the axion weak gravity conjecture

A popular proposal for resolving the Hubble tension involves an early phase of dark energy, driven by an axion field with a periodic potential. Here, in this paper, we argue that these models are tightly constrained by the axion weak gravity conjecture: for typical parameter values, the axion decay constant must satisfy f < 0.008,M Pl , which is smaller than the axion decay constants appearing in the vast majority of early dark energy models to date. We discuss possible ways to evade or loosen this constraint, arguing that its loopholes are small and difficult to thread. This suggests that it may prove challenging to realize early dark energy models in a UV complete theory of quantum gravity.

string theory and cosmology↗

Axion flux monodromy discharges relax the cosmological constant

Abstract Linear axion monodromy models modulated with higher powers of fields naturally realize the quantum-mechanical flux discharge mechanism for relaxing the cosmological constant toward zero. Working with multiple copies of superposed linear and quadratic flux monodromies, each copy spanned by a pair of fluxes, we show that when the axion is very massive and so effectively decoupled, the membrane discharges relax the cosmological constant toward an attractor 0 < Λ/M 4 Pl ≪ 1. If we restrict the flux variations and the intermediate flux values to never venture beyond a finite flux range, the terminal value of the cosmological constant will be tiny but finite. We show how it can reproduce the observed scale of dark energy, and explain how to incorporate matter sector phase transitions.

Astronomy & Astrophysics↗

Gravitational waves from primordial black hole evaporation with large extra dimensions

Abstract The spectra of gravitational waves from black hole evaporation generically peak at frequencies of order the Hawking temperature, making this signal ultra-high frequency for primordial black holes evaporating in the early universe. This motivates us to consider small black holes in theories with large extra dimensions, for which the peak frequency can be lowered substantially, since the true bulk Planck scaleM * can be much smaller than the effectiveM Pl . We study the emission of brane-localized gravitons during the Hawking evaporation of ultra-light primordial black holes in the context of theories with large extra dimensions, with the ultimate goal of computing the contribution to the stochastic gravitational wave background. To accurately model black hole evolution, we compute greybody factors for particles of spin-0, 1/2, 1, and 2 emitted on the brane and in the bulk, presuming the majority of emission proceeds during the Schwarzschild phase. We then compute the power spectrum and present day spectral density parameter for brane-localized gravitons contributing to a gravitational wave signal. We find that for an optimal choice of parameters, the peak frequency plateaus in the sub-MHz regime, within range of planned high-frequency gravitational wave detectors, making this scenario a target for detection once their sensitivity exceeds ΔN eff bounds.

Astronomy & Astrophysics↗

Modeling electron transfer from the barrier in InAs/GaAs quantum dot-well structure

We study single electron tunnelling from the barrier in the binary InAs/GaAs quantum structure including quantum well (QW) and quantum dot (QD). The tunneling is described in the terms of localized/delocalized states and their spectral distribution. The modeling is performed by using the phenomenological effective potential approach for InAs/GaAs heterostructures. The results for the two and three-dimensional models are presented. We focus on the effect of QD-QW geometry variations. The relation to the PL experiments is shown.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Updated cosmological constraints on axion dark energy with DESI

Here, we present updated constraints on the parameters of an axion dark energy model, for which we took into account the properties of its characteristic potential and its full cosmological evolution. We show that the values of the axion parameters appear sufficiently constrained by the data, including the latest DESI DR1, and are consistent with the theoretical expectations of a field mass 𝑚 𝑎 in the ultralight regime log⁡(𝑚 𝑎 ⁢𝑐 2 /eV) ≃ −32.60 ±0.12, and an effective energy scale 𝑓 𝑎 close to the reduced Planck energy log⁡(𝑓 𝑎 ⁡/𝑀 Pl ) ≃ −0.28 ± 0.19. Our results also support the idea of dynamical dark energy, although Bayesian evidence still favors the phenomenological dark energy model 𝑤 0 ⁢𝑤 𝑎 over the axion dark energy, with the Bayes factor indicating moderate and weak strength of the evidence, respectively, when the models are compared to the cosmological constant Λ. However, the results suggest that axion dark energy remains a well-motivated model and its parameters may be better constrained if the upcoming DESI data show further evidence for dynamical dark energy.

79 ASTRONOMY AND ASTROPHYSICS↗

Response of interferometers to the vacuum of quantum gravity

It has recently been suggested that exotic quantum gravity effects could lead to large vacuum fluctuations, potentially observable with realistic detectors. Experiments are currently being built to search for these signals. Here we analyze the minimal model of quantum gravity at low energies—the usual effective quantum field theory of gravitons—and show that it unambiguously predicts an unobservably small variation in the measured interferometer length Δ⁢𝐿 ∼ ℓ pl ∼ 10 −35 m. In particular, there are no divergences signaling a breakdown of this calculation in the low energy regime. Thus, detection of a large, gravitationally induced length variation would signal a severe breakdown of effective quantum field theory in low energy quantum gravity.

Carney, Daniel [Lawrence Berkeley National Laborat↗

Kuramoto synchronization of quantum tunneling polarons for describing the dynamic structure in cuprate superconductors

A major open topic in cuprates is the interplay between the lattice and electronic dynamics and the importance of their coupling to the mechanism of high-temperature superconductivity (HTSC). As evidenced by extended x-ray absorption fine structure (EXAFS) experiments, anharmonic structural effects are correlated with the charge dynamics and the transition to a superconducting phase in different HTSC compounds. Here, in this paper, we describe how structural anharmonic effects can be coupled to electronic and lattice dynamics in cuprate systems by performing the exact diagonalization of a prototype anharmonic many-body Hamiltonian on a relevant 6-atom cluster and show that the EXAFS results can be understood as a Kuramoto synchronization transition between coupled internal quantum tunneling of polarons associated with the two-site distribution of the copper–apical oxygen (Cu-O ap ) pair in the dynamic structure. The transition is driven by the anharmonicity of the lattice vibrations and promotes the pumping of charge, initially stored at the apical oxygen reservoirs, into the copper-oxide plane. Simultaneously, a finite projection of the internal quantum tunneling polaron extends to the copper–planar oxygen (Cu-O pl ) pair. All these findings allow an interpretation based on an effective quantum-mechanical triple-well potential associated with the oxygen sites of the 6-atom cluster, which accurately represents the phase synchronization of apical oxygens and lattice-assisted charge transfer to the CuO 2 plane.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Dark-exciton energy splitting in monolayer W Se 2 : Insights from time-dependent density functional theory

Here, we present here a formalism based on time-dependent density functional theory to describe characteristics of both intra- and intervalley excitons in semiconductors, the latter of which had remained a challenge. Through the usage of an appropriate exchange-correlation kernel (nanoquanta), we trace the energy difference between the intra- and intervalley dark excitons in monolayer (1L) W⁢ Se 2 to the domination of the exchange part in the exchange-correlation energies of these states. Furthermore, our calculated transition contribution maps establish the momentum resolved weights of the electron-hole excitations in both bright and dark excitons thereby providing a comprehensive understanding of excitonic properties of 1L W⁢ Se 2 . We find that the states consist of hybridized excitations around the corresponding valleys which leads to brightening of the dark excitons, i.e., significantly decreasing their lifetime which is reflected in the PL spectrum. Using many-body perturbation theory, we calculate the phonon contribution to the energy band gap and the linewidths of the excited electrons, holes, and (bright) exciton to find that as the temperature increases the band gap significantly decreases, while the linewidths increase. Our work paves for describing the ultrafast charge dynamics of transition metal dichalcogenide within an ab initio framework.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electrical Control and Transport of Tightly Bound Interlayer Excitons in a MoSe 2 /hBN/MoSe 2 Heterostructure

Controlling interlayer excitons in Van der Waals heterostructures holds promise for exploring Bose-Einstein condensates and developing novel optoelectronic applications, such as excitonic integrated circuits. Despite intensive studies, several key fundamental properties of interlayer excitons, such as their binding energies and interactions with charges, remain not well understood. Here we report the formation of momentum-direct interlayer excitons in a high-quality MoSe 2 /hBN/MoSe 2 heterostructure under an electric field, characterized by bright photoluminescence (PL) emission with high quantum yield and a narrow linewidth of less than 4 meV. These interlayer excitons show electrically tunable emission energy spanning ~1⁢8⁢0 meV through the Stark effect, and exhibit a sizable binding energy of ~8⁢1 meV in the intrinsic regime, along with trion binding energies of a few millielectronvolts. Remarkably, we demonstrate the long-range transport of interlayer excitons with a characteristic diffusion length exceeding 1⁢0 μ⁢m, which can be attributed, in part, to their dipolar repulsive interactions. Further, spatially and polarization-resolved spectroscopic studies reveal rich exciton physics in the system, such as valley polarization, local trapping, and the possible existence of dark interlayer excitons. Furthermore, the formation and transport of tightly bound interlayer excitons with narrow linewidth, coupled with the ability to electrically manipulate their properties, open exciting new avenues for exploring quantum many-body physics, including excitonic condensate and superfluidity, and for developing novel optoelectronic devices, such as exciton and photon routers.

2-dimensional systems↗