New photoemission studies of the d bands of nickel and copper.
Photoemission studies of optical density of D bands of nickel and copper
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Photoemission studies of optical density of D bands of nickel and copper
Photoemission studies of electron states in silver chloride and alkali halides
GaAs photoemissive yield spectrum analysis, discussing transition energies and energy band structure models
ZnTe electronic structure from photoemission study, noting emitted electron energy distribution
Ultrahigh vacuum cleaved GaAs-Cs and GaAs- cesium monoxide photoemission acceptor densities, noting crystal parameters role
Relativistic approximation for valence bands in cubic lattices, and photoemission changes of silver bromide during cooling
Temperature effects on photoemissions from silver halides
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Photoemission from evaporated gold films, measuring quantum yield, photoelectric energy distribution curves and optical density states
Photoemission optical analysis from thin films with uniaxial anisotropy, discussing reflectance, transmittance and divergence of Poynting vector
Examining photoemission from silver halides from room to liquid nitrogen temperatures to determine electron energy states
Anomalous temperature dependent silver halides photoemission related to lattice vibrationally dependent hybridization of valence states
KCl films exciton-induced photoemission, discussing mechanism of photoelectron emission rise with time under steady UV radiation
Polystyrene coating is applied to holographic storage tube substrate via glow discharge polymerization in an inert environment. After deposition of styrene coating, antimony and then cesium are added to produce photoemissive layer. Technique is utilized in preparing perfectly organized polymeric films useful as single-crystal membranes.
Zinc-doped InGaAsP quaternary III-V material of the proper composition range shows superior photoemission properties to either InGaAs or InAsP ternary material. The minority-carrier diffusion length in the quaternary material is at least as long as that in InAsP and much longer than observed in InGaAs. The barrier height at the InGaAsP-Cs2O interface is lowered by cooling, giving increased electron escape probability and new highs in quantum efficiency over a wide wavelength range. For example, a 1.06-micron quantum efficiency of 7.5%/incident photon was observed at -90 C.
Calculations of optical and photoemission spectra for CsI based on first-order allowed transitions between Bloch-wave states are discussed. The calculations, utilizing energy-band data for CsI published by Onodera (1968), were performed by computer sampling of regions in the Brillouin zone. The photoelectric spectra of CsI, calculated on the basis of an interpolated band scheme, display features which are in general agreement with the experimentally determined photoelectric energy distribution curves.