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At least 433 records · Page 24

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NASA NTRS1975

Mass absorption coefficients of Parylene N at soft X-ray and vacuum-ultraviolet wavelengths

Parylene N was selected as a bandpass filter for the extreme-ultraviolet telescope, flown on the Apollo-Soyuz Test Project in July 1975. The telescope measures stellar and diffuse cosmic radiation in the wavelength region from 45 to 170 A. In connection with this application, a systematic study was conducted of the mass absorption coefficient of the Parylene N. The results of the study for the wavelength region from 44 to 2536 A are reported.

Stern, R.↗

NASA NTRS1975

Interactions of 2.1 GeV/n He-4, C-12, N-14 and O-16 nuclei in emulsion

The interaction mean-free-path lengths for He-4, C-12, N-14 and O-16 nuclei at 2.1 GeV/n have been measured in nuclear emulsion detectors. The angular distributions of Z equals 1 and 2 secondaries from the interactions of C, N and O beams are determined, and the topology of projectile fragmentation of these ions is examined.

Heckman, H. H.↗

NASA NTRS1976

The log N-log S curve for 3CR radio galaxies and the problem of identifying faint radio galaxies

The log N-log S slope of optically identified galaxies in the 3CR catalog is analyzed for galaxies with flux levels greater than 10 Jy and located at galactic latitudes greater than 7 deg. For the 86 galaxies with known redshifts, the slope is found to be about 1.16; for all 119 galaxies, the slope is found to be about 1.50. If the 113 unidentified sources are included, the slope steepens to about 1.81. It is shown that this steepness is caused by the unidentified sources. Assuming that the slope is due to evolution at redshifts of 1 to 3 and that the unidentified sources are bright ellipticals, the mean redshifts and apparent brightnesses of these galaxies are calculated. The results indicate that it is impossible to observe the unidentified sources with existing ground-based telescopes, implying that it is presently impossible to establish directly that evolution is responsible for the steep log N-log S curve of the 3CR galaxies.

Burbidge, G. R.↗

NASA NTRS1976

Theoretical optimization and parametric study of n-on-p Al/x/Ga/1-x/As-GaAs graded band-gap solar cell

A comprehensive theoretical model of the graded band-gap Al(x)Ga(1-x)As-GaAs solar cell is used to optimize the n-on-p cell. The model includes power losses due to surface, bulk, and junction minority-carrier recombination, series resistance, and photon reflection from an SiO antireflection coating of optimum thickness. The optimized cell has a junction depth/graded band-gap layer thickness of 1.0 micron, respective donor and acceptor concentrations of 4 x 10 to the 17th power and 2 x 10 to the 17th power per cu cm, and a surface AlAs mode fraction of x = 0.35. The optimized graded band-gap cell has an air-mass-zero efficiency of 17.7% (not corrected for a 13% front surface contact area) and is shown to be less sensitive than a similar n-on-p GaAs cell to material degradation in the form of decreased minority-carrier diffusion lengths and increased surface-recombination velocity

Hutchby, J. A.↗

NASA NTRS1977

Ion cyclotron resonance studies of some reactions of N/+/ ions

Product distributions and rate constants for the reactions of ground-state N(+) ions with CO, NO, CO2, and CH4 were measured. Rate constants were obtained using ion-cyclotron-resonance trapped-ion methods, and product distributions were obtained using a tandem (Dempster-ICR) mass spectrometer. Rapid nitrogen isotope exchange was also observed in N(+)-N2 collisions.

Anicich, V. G.↗

NASA NTRS1977

Properties of small Ar sub N-1 K/+/ ionic clusters

A self-consistent formalism is developed that, based upon a many-body potential, dynamically determines the thermodynamic properties of ionic clusters without an a priori designation of the equilibrium structures. Aggregates consisting of a single closed shell K(+) ion and N-1 isoelectronic argon atoms were studied. The clusters form crystallites at low temperatures, and melting transitions and spontaneous dissociations are indicated. The results confirm experimental evidence that shows that ionic clusters become less stable with increasing N. The crystallite structures formed by four different clusters are isosceles triangle, skewed form, octahedron with ion in the middle, and icosahedron with the ion in the middle.

Etters, R. D.↗

NASA NTRS1978

Determination of boron and lithium by recording the products from (n, alpha) reactions

Irradiation with thermal neutrons in the VVR-S reactor provides a nondestructive method for determining the presence of boron and lithium in solids. The charged particles produced in the reactions Li-6(n,alpha)H-3 and B-10(n,alpha)Li-7 were detected using CsI single crystal. For alpha-particle spectrometry in the boron determination, an ionization chamber (W and Sn electrodes, 99% Ar + 1% H2) was developed allowing both absolute and relative measurements. In determining boron in lithium-containing samples, both scintillation and ionization chambers are used. In determining lithium in minerals, the error was 1.5%, and the sensitivity 0.00005 wt.%. In the determination of boron in SiC with a concentration of boron approximately (3 plus or minus 2) the error given by the alpha-range uncertainty was 15%.

Lobanov, Y. M.↗

NASA NTRS1978

Method and apparatus for measuring minority carrier lifetimes and bulk diffusion length in P-N junction solar cells

Carrier lifetimes and bulk diffusion length are qualitatively measured as a means for qualification of a P-N junction photovoltaic solar cell. High frequency (blue) monochromatic light pulses and low-frequency (red) monochromatic light pulses were alternately applied to the cell while it was irradiated by light from a solar simulator, and synchronously displaying the derivative of the output voltage of the cell on an oscilloscope. The output voltage is a measure of the lifetimes of the minority carriers (holes) in the diffused N layer and majority carriers (electrons) in the bulk P material, and of the diffusion length of the bulk silicon. By connecting a reference cell in this manner with a test cell to be tested in reverse parallel, the display of a test cell that matches the reference cell will be a substantially zero output.

Vonroos, O. H.↗

NASA NTRS1979

CO isotope mapping of L 134 N

Mapping of the dark cloud L 134 N in (C-12)O and (C-13)O has shown that at least two subclouds are distinguishable spatially and in velocity. (C-12)O emission is distributed over an area of about 90 arcmin diameter with a maximum temperature of about 11 K; for (C-13)O these are about 50 arcmin and 4 K. Linewidths increase from the edge of the cloud inward to a peak of about 2.5 km/s at the position of the (C-13)O temperature maximum. Line velocities show much variation as a function of position, but the predominant emission component occurs at 2.5-3 km/s in the LSR frame. Comparisons are made with earlier observations of L 134 N and with recent observations of L 134.

Caldwell, J. A. R.↗

NASA NTRS1978

Forward-bias capacitance and current measurements for determining lifetimes and band narrowing in p-n junction solar cells

A new method is described and illustrated for determining the minority-carrier diffusion length and lifetime in the base region of p-n junction solar cells. The method requires only capacitance measurements at the device terminals and its accuracy is estimated to be + or - 5%. It is applied to a set of silicon p-n junction devices and the values of the diffusion lengths agree with those obtained using the current response to X-ray excitation but disagree with those obtained by the OCVD method. The reasons for the relative inaccuracy of OCVD applied to silicon devices are discussed. The capacitance method includes corrections for a two-dimensional fringing effects which occur in small area devices. For a device having highly-doped base region and surface (emitter) layer, the method can be extended to enable the determination of material properties of the degenerately doped surface layer. These material properties include the phenomenological emitter lifetime and a measure of the energy band-gap narrowing in the emitter. An alternate method for determining the energy band-gap narrowing from temperature dependence of emitter current is discussed and demonstrated.

Neugroschel, A.↗

NASA NTRS1980

Electron-temperature dependence of dissociative recombination of electrons with CO(+)-(CO)n-series ions

A microwave afterglow mass spectrometer apparatus is used to determine the dependence on electron temperature T sub e of the recombination coefficients alpha sub n of the dimer and trimer ions of the series CO+.(CO) sub n. It is found that alpha sub 1 = (1.3 + or - 0.3)x 0.000001 (T sub e(K)/300) to the -0.34; and alpha sub 2 = (1.9 + or - 0.4)x 0.000001 (T sub e(K)/300) to the -0.33 cu cm/sec. These dependences on T sub e are quite different from those obtained previously for polar-cluster ions of the hydronium and ammonium series but are similar to that for simple diatomic ions.

Whitaker, M.↗

NASA NTRS1979

The N III and O IV intersystem multiplets as density indicators for solar plasmas

The usefulness of the relative intensities of lines within the N III intersystem multiplet near 1750 A as an electron density indicator for solar plasmas is discussed. Although the relative intensities of lines in the multiplet are density sensitive, the intensity ratios should at present be used with caution. Errors of the order of 20% in transition probabilities and excitation rate coefficients can lead to order of magnitude errors in density determinations. It is demonstrated that the intensity ratio of one of the N III intersystem lines and an allowed line from a different ion may also be used as a density indicator in the 10 to the 9th to 10 to the 11th per cu cm regime.

Feldman, U.↗

NASA NTRS1980

Post-breakdown bulk oscillations in gold-doped silicon p/+/-i-n/+/ double-injection diodes

Experimental results on postbreakdown bulk oscillations in n-type gold-doped phosphorus-compensated p(+)-i-n(+) double-injection diodes is presented. It is suggested that changes observed in the postbreakdown oscillation frequency and amplitude are due to changes in the prebreakdown characteristics. An empirical relationship for the frequency of oscillation is derived. It is concluded that the postbreakdown oscillations are drift-related, although their exact mechanism is not known.

Mantha, B.↗

NASA NTRS1980

The ultraviolet dayglow. I - Far UV emissions of N and N2

Far ultraviolet rocket spectra of N I and N2 dayglow emissions have been analyzed by using AE-E photoelectron spectra, laboratory-measured excitation cross sections, and photochemical models of atomic nitrogen. A self-consistent picture of both optically thick and thin emission features is found by using a model in which the principal production mechanism for N I 1200-A and 1493-A photons is photodissociative excitation of N2. The aeronomic data require that 50-70% of the excited 4 P atoms produced dissociatively have velocities within the Doppler core of the ambient nitrogen atoms, contrary to the expectation that those atoms are produced with large excess kinetic energy. The derived atomic nitrogen density has a maximum density of 2.7 x 10 to the 7th per cu cm at 170 km, a value that is within 40% of that from recent models of odd nitrogen photochemistry.

Meier, R. R.↗

NASA NTRS1980

Thin n-i-p silicon solar cell

A space solar cell concept which combines high cell output with low diffusion length damage coefficients is presented for the purpose of reducing solar cell susceptibility to degradation from the radiation environment. High resistivity n-i-p silicon solar cells ranging from upward of 83 micron-cm were exposed to AM0 ultraviolet illumination. It is shown that high resistivity cells act as extrinsic devices under dark conditions and as intrinsic devices under AM0 illumination. Resistive losses in thin n-i-p cells are found to be comparable to those in low resistivity cells. Present voltage limitations appear to be due to generation and recombination in the diffused regions.

Meulenberg, A., Jr.↗

NASA NTRS1981

The 'depletion layer' of amorphous p-n junctions

It is shown that within reasonable approximations for the density of state distribution within the mobility gap of a:Si, a one-to-one correspondence exists between the electric field distribution in the transition region of an amorphous p-n junction and that in the depletion layer of a crystalline p-n junction. Thus it is inferred that the depletion layer approximation which leads to a parabolic potential distribution within the depletion layer of crystalline junctions also constitutes a fair approximation in the case of amorphous junctions. This fact greatly simplifies an analysis of solid-state electronic devices based on amorphous material (i.e., solar cells).

Von Roos, O.↗

NASA NTRS1980

Experimental and theoretical investigations of the quality factor for N/+/P silicon solar cells

Many N(+)P silicon solar cells made with silicon from different growth techniques have current-voltage relations of the form: I = I(0) (exp(qV/AkT) - 1), where the quality factor A is nonintegral, is greater than 1, and shows a temperature dependence. The dark forward characteristics of such cells have been measured over a range of temperatures and the behavior of the factor A derived from them. Lack of agreement with previous models has led to the development of a new model, in which N(+) conduction electrons tunnel to deep levels near that side, these levels being due to junction contamination by impurities. Electron recombination then occurs with holes thermally assisted into the junction from the P side. This mechanism involves increased I(0) values over those for diffusion diode processes and thus reduces the cell power conversion efficiency.

Garlick, G. F. J.↗

NASA NTRS1980

Temperature retrievals from TIROS-N

A nonstatistical, nonlinear iterative scheme, has been developed, based on the methods of Chahine (1970), to retrieve surface temperature, vertical temperature profile and cloud distribution from TIROS-N HIRS 2/MSU observations. Fundamental to the technique is the ability to accurately calculate clear column radiances given atmospheric and surface characteristics. The cloud filtering algorithm, making simultaneous use of IR 15 micron channels and microwave channels, allows accurate infrared retrievals in the presence of up to 80 percent cloud cover. Details for the iterative scheme are presented together with preliminary results from analysis of TIROS-N data.

Susskind, J.↗