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At least 433 records · Page 24

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NASA NTRS2018

Lessons Learned in the Flight Qualification of the S-NPP and NOAA-20 Solar Array Mechanisms

Deployable solar arrays are the energy source used on almost all Earth orbiting spacecraft and their release and deployment are mission-critical; fully testing them on the ground is a challenging endeavor. The 8 meter long deployable arrays flown on two sequential NASA weather satellites were each comprised of three rigid panels almost 2 meters wide. These large panels were deployed by hinges comprised of stacked constant force springs, eddy current dampers, and were restrained through launch by a set of four releasable hold-downs using shape memory alloy release devices. The ground qualification testing of such unwieldy deployable solar arrays, whose design was optimized for orbital operations, proved to be quite challenging and provides numerous lessons learned. A paperwork review and follow-up inspection after hardware storage determined that there were negative torque margins and missing lubricant, this paper will explain how these unexpected issues were overcome. The paper will also provide details on how the hinge subassemblies, the fully-assembled array, and mechanical ground support equipment were subsequently improved and qualified for a follow-on flight with considerably less difficulty. The solar arrays built by Ball Aerospace Corp. for the Suomi National Polar Partnership (SNPP) satellite and the Joint Polar Satellite System (JPSS-1) satellite (now NOAA-20) were both successfully deployed on-obit and are performing well.

Sexton, Adam↗

DOE OSTI2020

System and method for controlling an energy beam of an additive manufacturing system

An additive manufacturing system includes an energy beam generator that generates an energy beam to melt and fuse raw materials for a part and a computing device that controls operation of the energy beam generator. The computing device includes a memory element that stores or access a three-dimensional model of the part, and a processing element that receives at least a portion of the three-dimensional model and controls a parameter of the energy beam generator according to a gradient function so as to apply a variable amount of heat to the raw material that forms an overhang on the part.

42 ENGINEERING↗

DOE OSTI2023

Classification based anomaly detection

An example device includes processing circuitry and a memory. The memory includes instructions that cause the device to perform various functions. The functions include receiving datastreams from a plurality of sensors of a high performance computing system, classifying each datastream of the each sensor to one of a plurality of datastream models, selecting an anomaly detection algorithm from a plurality of anomaly detection algorithms for each datastream, determining parameters of the each anomaly detection algorithm, determining an anomaly threshold for each datastream, and generating an indication that the sensor associated with the datastream is acting anomalously.

Serebryakov, Sergey↗

DOE OSTI2025

IRIS-MEMFLOW: Data Flow-Enabled Portable Memory Orchestration in IRIS Runtime for Diverse Heterogeneity

Task-based programming models and execution paradigms provide a means to decompose a computation by expressing it as a graph in which each node represents a specific computation operating on memory objects and the edges define the dependencies in the execution flow. In this execution model, independent nodes in the graph can be executed concurrently in different computing devices, making it suitable for heterogeneous systems in which computing devices with different architectures coexist. However, careful memory orchestration across heterogeneous devices is needed because copies of the same memory object may reside in multiple devices during execution. Manually ensuring such an orchestration is quite challenging. Not only must an application developer guard against race conditions, but they must also optimize data movement between the host and devices because unnecessary data movement significantly impacts performance. To mitigate these challenges, we enhance the IRIS heterogeneous runtime and introduce IRIS-MEMFLOW–a data flow–enabled portable memory abstraction for seamlessly orchestrating memory in diverse heterogeneous computing environments. By using data-flow analysis, IRIS-MEMFLOW guards against race conditions while multiple heterogeneous devices access memory objects. IRIS-MEMFLOW also optimizes data movement between the host and devices without manual intervention. As a result, IRIS provides improved programming productivity, performance, and portability for multidevice heterogeneous executions in high-performance computing and cloud systems that run diverse architectures from different vendors. The efficacy of IRIS-MEMFLOW is evaluated through experiments that show its capability in terms of programming productivity, multidevice heterogeneity, portability, and low overhead versus the state of the art.

Monil, M. A. H. [ORNL] (ORCID:0000000334194037)↗

DOE OSTI2021

A domain wall-magnetic tunnel junction artificial synapse with notched geometry for accurate and efficient training of deep neural networks

Inspired by the parallelism and efficiency of the brain, several candidates for artificial synapse devices have been developed for neuromorphic computing, yet a nonlinear and asymmetric synaptic response curve precludes their use for backpropagation, the foundation of modern supervised learning. Spintronic devices—which benefit from high endurance, low power consumption, low latency, and CMOS compatibility—are a promising technology for memory, and domain-wall magnetic tunnel junction (DW-MTJ) devices have been shown to implement synaptic functions such as long-term potentiation and spike-timing dependent plasticity. In this work, we propose a notched DW-MTJ synapse as a candidate for supervised learning. Using micromagnetic simulations at room temperature, we show that notched synapses ensure the non-volatility of the synaptic weight and allow for highly linear, symmetric, and reproducible weight updates using either spin transfer torque (STT) or spin–orbit torque (SOT) mechanisms of DW propagation. We use lookup tables constructed from micromagnetics simulations to model the training of neural networks built with DW-MTJ synapses on both the MNIST and Fashion-MNIST image classification tasks. Accounting for thermal noise and realistic process variations, the DW-MTJ devices achieve classification accuracy close to ideal floating-point updates using both STT and SOT devices at room temperature and at 400 K. Our work establishes the basis for a magnetic artificial synapse that can eventually lead to hardware neural networks with fully spintronic matrix operations implementing machine learning.

42 ENGINEERING↗

DOE OSTI2021

Superconducting neural networks with disordered Josephson junction array synaptic networks and leaky integrate-and-fire loop neurons

Fully coupled randomly disordered recurrent superconducting networks with additional open-ended channels for inputs and outputs are considered the basis to introduce a new architecture to neuromorphic computing in this work. Various building blocks of such a network are designed around disordered array synaptic networks using superconducting devices and circuits as an example, while emphasizing that a similar architectural approach may be compatible with several other materials and devices. A multiply coupled (interconnected) disordered array of superconducting loops containing Josephson junctions [equivalent to superconducting quantum interference devices (SQUIDs)] forms the aforementioned collective synaptic network that forms a fully recurrent network together with compatible neuron-like elements and feedback loops, enabling unsupervised learning. This approach aims to take advantage of superior power efficiency, propagation speed, and synchronizability of a small world or a random network over an ordered/regular network. Additionally, it offers a significant factor of increase in scalability. Here, a compatible leaky integrate-and-fire neuron made of superconducting loops with Josephson junctions is presented, along with circuit components for feedback loops as needed to complete the recurrent network. Several of these individual disordered array neural networks can further be coupled together in a similarly disordered way to form a hierarchical architecture of recurrent neural networks that is often suggested as similar to a biological brain.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

NASA NTRS1972

Design, processing, and testing of lsi arrays for space station

The design of a MOS 256-bit Random Access Memory (RAM) is discussed. Technological achievements comprise computer simulations that accurately predict performance; aluminum-gate COS/MOS devices including a 256-bit RAM with current sensing; and a silicon-gate process that is being used in the construction of a 256-bit RAM with voltage sensing. The Si-gate process increases speed by reducing the overlap capacitance between gate and source-drain, thus reducing the crossover capacitance and allowing shorter interconnections. The design of a Si-gate RAM, which is pin-for-pin compatible with an RCA bulk silicon COS/MOS memory (type TA 5974), is discussed in full. The Integrated Circuit Tester (ICT) is limited to dc evaluation, but the diagnostics and data collecting are under computer control. The Silicon-on-Sapphire Memory Evaluator (SOS-ME, previously called SOS Memory Exerciser) measures power supply drain and performs a minimum number of tests to establish operation of the memory devices. The Macrodata MD-100 is a microprogrammable tester which has capabilities of extensive testing at speeds up to 5 MHz. Beam-lead technology was successfully integrated with SOS technology to make a simple device with beam leads. This device and the scribing are discussed.

Lile, W. R.↗

DOE OSTI2022

Promoting prefetched data from a cache memory to registers in a processor

An electronic device includes a processor having a cache memory, a plurality of physical registers, and a promotion logic functional block. The promotion logic functional block promotes prefetched data from a portion of a cache block in the cache memory into a given physical register, the promoting including storing the prefetched data in the given physical register. Upon encountering a load micro-operation that loads data from the portion of the cache block into a destination physical register, the promotion logic functional block sets the processor so that the prefetched data stored in the given physical register is provided to micro-operations that depend on the load micro-operation.

Kotra, Jagadish↗

NASA NTRS1970

Improved solid state electron-charge-storage device

Storage device is applicable in memory systems and in high-resolution arrays for light-responsive image sensing. The device offers high yield in multiple arrays and allows charge release with light striking only the edge of a metal electrode.

Kuper, A. B.↗

NASA NTRS1991

Shape-memory alloy micro-actuator

A method of producing an integral piece of thermo-sensitive material, which is responsive to a shift in temperature from below to above a phase transformation temperature range to alter the material's condition to a shape-memory condition and move from one position to another. The method is characterized by depositing a thin film of shape-memory material, such as Nickel titanium (Ni-Ti) onto a substrate by vacuum deposition process such that the alloy exhibits an amorphous non-crystalline structure. The coated substrate is then annealed in a vacuum or in the presence of an inert atmosphere at a selected temperature, time and cool down rate to produce an ordered, partially disordered or fully disordered BCC structure such that the alloy undergoes thermoelastic, martinsetic phase transformation in response to alteration in temperature to pass from a martinsetic phase when at a temperature below a phase transformation range and capable of a high level of recoverable strain to a parent austenitic phase in a memory shape when at a temperature above the phase transformation range. Also disclosed are actuator devices employing shape-memory material actuators that deform from a set shape toward an original shape when subjected to a critical temperature level after having been initially deformed from the original shape into the set shape while at a lower temperature. The actuators are mechanically coupled to one or more movable elements such that the temperature-induce deformation of the actuators exerts a force or generates a motion of the mechanical element(s).

Busch, John D.↗

NASA NTRS2013

FY12 End of Year Report for NEPP DDR2 Reliability

This document reports the status of the NASA Electronic Parts and Packaging (NEPP) Double Data Rate 2 (DDR2) Reliability effort for FY2012. The task expanded the focus of evaluating reliability effects targeted for device examination. FY11 work highlighted the need to test many more parts and to examine more operating conditions, in order to provide useful recommendations for NASA users of these devices. This year's efforts focused on development of test capabilities, particularly focusing on those that can be used to determine overall lot quality and identify outlier devices, and test methods that can be employed on components for flight use. Flight acceptance of components potentially includes considerable time for up-screening (though this time may not currently be used for much reliability testing). Manufacturers are much more knowledgeable about the relevant reliability mechanisms for each of their devices. We are not in a position to know what the appropriate reliability tests are for any given device, so although reliability testing could be focused for a given device, we are forced to perform a large campaign of reliability tests to identify devices with degraded reliability. With the available up-screening time for NASA parts, it is possible to run many device performance studies. This includes verification of basic datasheet characteristics. Furthermore, it is possible to perform significant pattern sensitivity studies. By doing these studies we can establish higher reliability of flight components. In order to develop these approaches, it is necessary to develop test capability that can identify reliability outliers. To do this we must test many devices to ensure outliers are in the sample, and we must develop characterization capability to measure many different parameters. For FY12 we increased capability for reliability characterization and sample size. We increased sample size this year by moving from loose devices to dual inline memory modules (DIMMs) with an approximate reduction of 20 to 50 times in terms of per device under test (DUT) cost. By increasing sample size we have improved our ability to characterize devices that may be considered reliability outliers. This report provides an update on the effort to improve DDR2 testing capability. Although focused on DDR2, the methods being used can be extended to DDR and DDR3 with relative ease.

Guertin, Steven M.↗

DOE OSTI2023

Late Breaking Results: COPPER: Computation Obfuscation by Producing Permutations for Encoding Randomly

Deployed embedded devices face security risks due to increased ease of physical access to the devices by unauthorized users. Capable adversaries can intercept a device to recover the data in memory, including results of performed sensitive computations. Device owners require data confidentiality on their physically insecure devices. To satisfy this goal we implement a novel method, COPPER (Computation Obfuscation by Producing Permutations for Encoding Randomly), to create data which never exists on the device digitally in plaintext format and which is subsequently used for computation. In this paper we utilize COPPER to calculate a moving average computation on encoded data.

embedded systems↗

DOE OSTI2024

When in-memory computing meets spiking neural networks—A perspective on device-circuit-system-and-algorithm co-design

This review explores the intersection of bio-plausible artificial intelligence in the form of spiking neural networks (SNNs) with the analog in-memory computing (IMC) domain, highlighting their collective potential for low-power edge computing environments. Through detailed investigation at the device, circuit, and system levels, we highlight the pivotal synergies between SNNs and IMC architectures. Additionally, we emphasize the critical need for comprehensive system-level analyses, considering the inter-dependencies among algorithms, devices, circuit, and system parameters, crucial for optimal performance. An in-depth analysis leads to the identification of key system-level bottlenecks arising from device limitations, which can be addressed using SNN-specific algorithm–hardware co-design techniques. This review underscores the imperative for holistic device to system design-space co-exploration, highlighting the critical aspects of hardware and algorithm research endeavors for low-power neuromorphic solutions.

Physics↗

NASA NTRS1990

Development of shape memory metal as the actuator of a fail safe mechanism

A small, compact, lightweight device was developed using shape memory alloy (SMA) in wire form to actuate a pin-puller that decouples the flanges of two shafts. When the SMA is heated it contracts producing a useful force and stroke. As it cools, it can be reset (elongated in this case) by applying a relatively small force. Resistive heating is accomplished by running a current through the SMA wire for a controlled length of time. The electronics to drive the device are not elaborate or complicated, consisting of a timed current source. The total available contraction is 3 percent of the length of the wire. This device, the engineering properties of the SMA, and the tests performed to verify the design concept are described.

Ford, V. G.↗

NASA NTRS1990

Spatial light modulators and applications III; Proceedings of the Meeting, San Diego, CA, Aug. 7, 8, 1989

Recent advances in the technology and applications of spatial light modulators (SLMs) are discussed in review essays by leading experts. Topics addressed include materials for SLMs, SLM devices and device technology, applications to optical data processing, and applications to artificial neural networks. Particular attention is given to nonlinear optical polymers, liquid crystals, magnetooptic SLMs, multiple-quantum-well SLMs, deformable-mirror SLMs, three-dimensional optical memories, applications of photorefractive devices to optical computing, photonic neurocomputers and learning machines, holographic associative memories, SLMs as parallel memories for optoelectronic neural networks, and coherent-optics implementations of neural-network models.

Efron, Uzi↗

NASA NTRS2011

Users Guide on Scaled CMOS Reliability: NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Assurance

Reliability of advanced CMOS technology is a complex problem that is usually addressed from the standpoint of specific failure mechanisms rather than overall reliability of a finished microcircuit. A detailed treatment of CMOS reliability in scaled devices can be found in Ref. 1; it should be consulted for a more thorough discussion. The present document provides a more concise treatment of the scaled CMOS reliability problem, emphasizing differences in the recommended approach for these advanced devices compared to that of less aggressively scaled devices. It includes specific recommendations that can be used by flight projects that use advanced CMOS. The primary emphasis is on conventional memories, microprocessors, and related devices.

Scaled CMOS↗

DOE OSTI2020

Diagnosing and Destroying Non-Markovian Noise

Nearly every protocol used to analyze the performance of quantum information processors is based on an assumption that the errors experienced by the device during logical operations are constant in time and are insensitive to external contexts. This assumption is pervasive, rarely stated, and almost always wrong. Quantum devices that do behave this way are termed "Markovian:' but nearly every system we have ever probed has displayed drift or crosstalk or memory effects they are all non-Markovian. Strong non-Markovianity introduces spurious effects in characterization protocols and violates assumptions of the fault-tolerance threshold theorems. This SAND report details a three year laboratory-directed research and development (LDRD) project entitled, "Diagnosing and Destroying non-Markovian Noise in Quantum Information Processors." This program was initiated to build tools to study non-Markovian dynamics and quantum systems and develop robust methodologies for eliminating it. The program achieved a number of notable successes, including the first statistically rigorous protocol for identifying and characterizing drift in quantum systems, a formalism for modeling memory effects in quantum devices, and the successful suppression of drift in a Sandia trapped-ion quantum processor.

97 MATHEMATICS AND COMPUTING↗

NASA NTRS1977

Development of a high capacity bubble domain memory element and related epitaxial garnet materials for application in spacecraft data recorders. Item 1: Development of a high capacity memory element

Several versions of the 100K bit chip, which is configured as a single serial loop, were designed, fabricated and evaluated. Design and process modifications were introduced into each succeeding version to increase device performance and yield. At an intrinsic field rate of 150 KHz the final design operates from -10 C to +60 C with typical bias margins of 12 and 8 percent, respectively, for continuous operation. Asynchronous operation with first bit detection on start-up produces essentially the same margins over the temperature range. Cost projections made from fabrication yield runs on the 100K bit devices indicate that the memory element cost will be less than 10 millicents/bit in volume production.

Besser, P. J.↗