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At least 433 records · Page 24

The Influence of Microstructure on TCR for Inkjet-Printed Resistive Temperature Detectors Fabricated Using AgNO 3 /Ethylene-Glycol-Based Inks

This study investigated the influence of microstructure on the performance of Ag inkjet-printed, resistive temperature detectors (RTDs) fabricated using particle-free inks based on a silver nitrate (AgNO 3 ) precursor and ethylene glycol as the ink solvent. Specifically, the temperature coefficient of resistance (TCR) and sensitivity for sensors printed using inks that use monoethylene glycol (mono-EG), diethylene glycol (di-EG), and triethylene glycol (tri-EG) and subjected to a low-pressure argon (Ar) plasma after printing were investigated. Scanning electron microscopy (SEM) confirmed previous findings that microstructure is strongly influenced by the ink solvent, with mono-EG inks producing dense structures, while di- and tri-EG inks produce porous structures, with tri-EG inks yielding the most porous structures. RTD testing revealed that sensors printed using mono-EG ink exhibited the highest TCR (1.7 × 10 -3 /°C), followed by di-EG ink (8.2 × 10 -4 /°C) and tri-EG ink (7.2 × 10 -4 /°C). These findings indicate that porosity exhibits a strong negative influence on TCR. Sensitivity was not strongly influenced by microstructure but rather by the resistance of RTD. The highest sensitivity (0.84 Ω/°C) was observed for an RTD printed using mono-EG ink but not under plasma exposure conditions that yield the highest TCR.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Effect of interfacial structures on phonon transport across atomically precise Si/Al heterojunctions

Phonons are important carriers of energy and information in many cryogenic devices used for quantum information science and in fundamental physics experiments such as dark matter detectors. In these systems phonon behavior can be dominated by interfaces, hence there is increasing demand for a more detailed understanding of interfacial phonon transport in relevant material systems. Previous studies have focused on understanding thermal transport over the entire phonon spectrum at and above room temperature. At ultra-low temperatures, however, knowledge is missing regarding athermal phonon behavior due to the challenge in modeling the extreme conditions in micro-scale, heterogeneous cryogenic systems, as well as extracting single-phonon information from a large ensemble. In this work, we delineate interfacial phonon transport using a combination of classical molecular dynamics (MD) and phonon wave packet simulations, to illustrate the consistency and differences between the ensemble- and single-phonon dynamics. We consider three single-crystal Si surface reconstructions --- (1×1), (v3×v3) and (7×7) --- and model both experimentally observed Si(1×1)/Al interfaces and hypothesized Si(v3×v3)/Al and Si(7×7)/Al interfaces. The overall interfacial thermal conductance calculated from non-equilibrium MD shows that for the Si(1×1)/Al system, the presence of Al twin grain boundaries can hinder phonon transport and reduce thermal conductance by 2--12% relative to single-crystal Al; whereas the Si (v3×v3) and (7×7) reconstructions can enhance it by 6--19%. Normal mode decomposition reveals that both the increase and decrease in conductance are related to inelastic phonon scattering. Single-phonon wave packet simulations show results consistent with NEMD, while further suggesting that phonon polarization conversion is significant even when elastic transmission dominates, and that the interfacial structures have anisotropic impacts on atomic vibrations along different lattice directions. Our findings suggest alternative perspectives in achieving selective phonon transport through controlling interfacial structures of materials with atomically-precise fabrication techniques, and that the phonon wave packet formalism is a potentially powerful method for developing a detailed understanding of non-equilibrium phenomena in the low-temperature limit.

Lu, Zexi↗

Significant initial results from the environmental measurements experiment on ATS-6

The Applications Technology Satellite (ATS-6), launched into synchronous orbit on 30 May 1974, carried a set of six particle detectors and a triaxial fluxgate magnetometer. The particle detectors were able to determine the ion and electron distribution functions from 1 to greater than 10 to the 8th power eV. It was found that the magnetic field is weaker and more tilted than predicted by models which neglect internal plasma and that there is a seasonal dependence to the magnitude and tilt. ATS-6 magnetic field measurements showed the effects of field-aligned currents associated with substorms, and large fluxes of field-aligned particles were observed with the particle detectors. Encounters with the plasmasphere revealed the existence of warm plasma with temperatures up to 30 eV. A variety of correlated waves in both the particles and fields were observed: pulsation continuous oscillations, seen predominantly in the plasmasphere bulge; ultralow frequency (ULF) standing waves; ring current proton ULF waves; and low frequency waves that modulate the energetic electrons. In additon, large scale waves on the energetic-ion-trapping boundary were observed, and the intensity of energetic electrons was modulated in association with the passage of sector boundaries of the interplanetary magnetic field.

Fritz, T. A.↗

Guided transmission for 10 micron tunable lasers

Performance characteristics are reported for two types of IR tunable laser guided transmission, one of which incorporates a CO2 laser, metallic piping or fiber-optics, and a detector system, while the other employs a tunable diode laser, fiber-optics, and a detector system. While existing technology furnishes low loss, rugged, near-single mode piping, fiber-optics exhibits appreciably higher loss, and its multimode fibers are fragile and chemically unstable. Studies have accordingly concentrated on such relevant fiber parameters as loss, toxicity, hygroscopicity, refractive index, flexibility, and thermal behavior at low temperature.

Yu, C.↗

Cryocoolers for Space

Many planetary and Earth science missions require cooling to increase sensitivity and reduce thermal noise of detectors, for preserving high Isp propellants, or for protecting instruments from hostile environments. For space applications, such cooling requires reliable, efficient, long-life coolers that are relatively compact, lightweight, and have low vibration. We have developed and are developing coolers that meet these requirements over a wide range of temperatures. These include pulse tube coolers cooling from 300 K to below 6 K, a magnetic cooler cooling from 10 K to 2 K, a 3He sorption cooler cooling from 2 K to 0.3 K and a helium dilution cooler cooling from 0.3 K to 0.05 K. Details of these coolers and their advantages are presented.

Kittel, Peter↗

Temperature Evolution of Excitonic Absorptions in Cd(1-x)Zn(x)Te Materials

The studies consist of measuring the frequency dependent transmittance (T) and reflectance (R) above and below the optical band-gap in the UV/Visible and infrared frequency ranges for Cd(l-x),Zn(x),Te materials for x=0 and x=0.04. Measurements were also done in the temperature range from 5 to 300 K. The results show that the optical gap near 1.49 eV at 300 K increases to 1.62 eV at 5 K. Finally, we observe sharp absorption peaks near this gap energy at low temperatures. The close proximity of these peaks to the optical transition threshold suggests that they originate from the creation of bound electron-hole pairs or excitons. The decay of these excitonic absorptions may contribute to a photoluminescence and transient background response of these back-illuminated HgCdTe CCD detectors.

Quijada, Manuel A.↗

Fabrication of an Antenna-Coupled Bolometer for Cosmic Microwave Background Polarimetry

We describe the development of a detector for precise measurements of the cosmic microwave background polarization. The detector employs a waveguide to couple light between a pair of Mo/Au superconducting transition edge sensors (TES) and a feedhorn. Incorporation of an on-chip ortho-mode transducer (OMT) results in high isolation. The OMT is micromachined and bonded to the microstrip and TES circuits in a low temperature wafer bonding process. The wafer bonding process incorporates a buried superconducting niobium layer with a single crystal silicon layer which serves as the leg isolated TES membrane and as the microstrip dielectric. We describe the micromachining and wafer bonding process and report measurement results of the microwave circuitry operating in the 29-43GHz band along with Johnson noise measurements of the TES membrane structures and development of Mo/Au TES operating under '00mK.

Denis, K.L.↗

Resistive Coatings for High-performance, Low-background MCPs Operating Across Broad Temperature Ranges and at Cryogenic Temperatures

Microchannel plate with improved thermo-electric properties are a high risk, high payoff development undertaken by a consortium of effort that links the Argonne National Lab, the Space-Science Lab at UC Berkeley and the small businesses (Incom Inc.) that will commercialize the advanced technology in open MCPs and LAPPDs. This development will satisfy the needs for new instrumentation for homeland security (non-proliferation) sensors to screen vehicles and cargo for Special Nuclear Materials (SNMs) and scientific detectors for astrophysics, electron microscopy, time-of-flight mass spectrometry, molecular and atomic collision studies, and fluorescence imaging applications in biotechnology and medical imaging products including positron emission tomography (PET scanning).

99 GENERAL AND MISCELLANEOUS↗

SiAl Alloy Feedhorn Arrays: Material Properties, Feedhorn Design, and Astrophysical Applications

We present here a study of the use of the SiAl alloy CE7 for the packaging of silicon devices at cryogenic temperatures. We report on the development of baseplates and feedhorn arrays for millimeter wave bolometric detectors for astrophysics. Existing interfaces to such detectors are typically made either of metals, which are easy to machine but mismatched to the thermal contraction profile of Si devices, or of silicon, which avoids the mismatch but is difficult to directly machine. CE7 exhibits properties of both Si and Al, which makes it uniquely well suited for this application. We measure CE7 to a) superconduct below a critical transition temperature, T (sub c), 1.2 K, b) have a thermal contraction profile much closer to Si than metals, which enables simple mating, and c) have a low thermal conductivity which can be improved by Au-plating. Our investigations also demonstrate that CE7 can be machined well enough to fabricate small structures, such as #0-80 threaded holes, to tight tolerances (approximately 25 microns) in contrast with pure silicon and similar substrates. We have fabricated CE7 baseplates being deployed in the 93 gigahertz polarimetric focal planes used in the Cosmology Large Angular Scale Surveyor (CLASS). We also report on the development of smooth-walled feedhorn arrays made of CE7 that will be used in a focal plane of dichroic 150/220 gigahertz detectors for the CLASS High-Frequency camera.

Ali, Aamir M.↗

Evaluation of crystalline quality of traveling heater method (THM) grown Cd0.9Zn0.1Te0.98Se0.02 crystals

Because of its excellent opto-electronic properties, CdZnTe (CZT) has been the material of choice for x- and gamma-ray detectors operable at room temperature. CZT is the leading commercially available room-temperature radiation detector material today. Although much progress has been made over the past three decades, today's CZT crystals still face certain challenges, especially the presence of the performance-limiting materials defects and the associated relatively high production cost. In this regard, CdxZn1−xTeySe1−y (CZTS) is emerging as a next-generation compound semiconductor, which overcomes some of the limitations of CZT technology for the stated applications. Here, we conducted a study to evaluate the crystalline quality of the traveling heater method grown CZTS with an optimized alloy composition, i.e., Cd0.9Zn0.1Te0.98Se0.02. The as-grown samples were evaluated by low-temperature photoluminescence (PL) spectroscopy and high-resolution x-ray diffraction using the synchrotron light source at Brookhaven National Laboratory. The full width at half maximum of both the PL and x-ray rocking curves was observed to be broadened due to the lattice disorder of the quaternary compound, eventually degrading the crystalline quality. This was consistent with density functional theory calculations.

Roy, U. N. (ORCID:0000000282089680)↗

16 Infrared Hot Electron Transistor

Very long wavelength infrared (VWIR) photodetectors, 14 20 , are of a great interest for variety of space-borne applications. These space applications have placed stringent requirements on the performance of the infrared detectors and arrays including high detectivity, low dark current, uniformity, radiation hardness and lower power dissipation. I will discuss the development and progress of AlxGal- xAs/GaAs VWIR quantum well infrared photodetectors (QWIPs) to meet those stringent requirements and the demonstration of a 15 128x128 QWIP focal plane array camera. The noise equivalent temperature difference of the focal plane array is 30 mK at 300 K background, and operating temperature is 45 K.

Electron Transistor↗

Integrated filter and detector array for spectral imaging

A spectral imaging system having an integrated filter and photodetector array is disclosed. The filter has narrow transmission bands which vary in frequency along the photodetector array. The frequency variation of the transmission bands is matched to, and aligned with, the frequency variation of a received spectral image. The filter is deposited directly on the photodetector array by a low temperature deposition process. By depositing the filter directly on the photodetector array, permanent alignment is achieved for all temperatures, spectral crosstalk is substantially eliminated, and a high signal to noise ratio is achieved.

Labaw, Clayton C.↗

Role of deep levels and barrier height lowering in current-flow mechanism in 150 μ m thick epitaxial n-type 4H–SiC Schottky barrier radiation detectors

Schottky barrier detectors (SBDs) require larger surface areas than conventional electronics to increase the detection efficiency although such SBDs manifest large diode ideality factors due to inhomogeneous areal distribution of surface barrier height (SBH). Inhomogeneous SBH distributions lead to various current flow mechanisms in SBDs, which need to be identified to optimize detector performance. In this Letter, we identify the current flow mechanism in large area Schottky barrier diodes for radiation detection fabricated on 150 μm thick n-4H–SiC epitaxial layers. The analysis of temperature-dependent forward current–voltage (I–V–T) characteristics of SBDs revealed two linear regions in current–voltage curves up to 450 K, one corresponding to the current flow through a low barrier patch, while the other corresponds to that of average barrier distribution. Applying a SBH distribution model to the reverse I–V–T characteristics, an activation energy of 0.76 eV for the current flow over the Schottky barrier was calculated. Additionally, the activation energy did not directly correspond to any of the defect levels observed from the deep level transient spectroscopy (DLTS). Above 450 K, a Schottky type barrier lowering suggested a current flow through a low barrier patch of ≈ 0.8 eV. The absence of any SBH lowering below 450 K indicated that the current corresponded to a neutrally charged trap level at ≈ 0.6 eV below the conduction band edge, which was consistent with DLTS measurements revealing the presence of an electron trap level Z1/2 at 0.59 eV below the conduction band edge.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Increased sensitivity of a vidicon optical multichannel analyzer with a detachable electrostatic image intensifier

A substantial gain in sensitivity is reported through the addition of a commercially available electrostatic image intensifier to a silicon-intensified target vidicon system. This comparatively low cost modification allows cooled or room temperature operation, CW or pulsed detection, and ease of removal or attachment. A 40-mm, first-generation technology image intensifier was used in a configuration in which the photocathode end was at negative high voltage and the phosphor end was at ground. Cooling the vidicon detector did not result in improved SNR; more generally, a 50-fold sensitivity increase was observed for the image intensifier/vidicon system.

Snow, J. B.↗

Analysis of temperature effects on self-powered neutron detectors in a gamma field

Self-powered neutron detectors (SPND) are small, robust, in-core radiation sensors that have the potential to operate in high temperature environments (above 600°C). However, previous experiments indicated temperature related effects in the form of displacement currents. Given the recent irradiation at The Ohio State University Research Reactor using a delayed-response rhodium-based SPND alongside a prompt-response tantalum-based SPND, it was concluded that only low-energy electrons from gamma interactions were the cause of these temperature effects. A series of heated gamma irradiations with temperatures up to 750°C of SPNDs were performed at the Advanced Test Reactor Gamma Facility in order to better characterize these displacement currents. The results from the experiments demonstrated a strong relation between the displacement currents that occurred during temperature ramps to thermoluminescence (TL) glow peaks—the SPND with Al2O3 insulation has one glow peak within 750°C and the SPND with MgO has three. A demonstration was performed to calculate the trap energy levels of the displacement currents through TL glow peak analysis. Unfortunately, the methods employed provided inconsistent results, requiring an updated model based on ongoing irradiation instead of post-irradiation measurements.

46 - INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AN↗

Characterization and QC practice of 16-channel ADC ASIC at cryogenic temperature for Liquid Argon TPC front-end readout electronics system in DUNE experiment

ColdADC is a low-noise 16-channel analog-to-digital converter ASIC designed for cold readout electronics of Liquid Argon Time Projection Chambers (LArTPCs) in the Deep Underground Neutrino Experiment (DUNE). ColdADC was specifically designed for operation at cryogenic temperatures (77 K–89 K). Cold electronics is considered to be an enabling technology for liquid argon detectors in neutrino experiments. The main function of the chip is to digitize signals from the 16-channel charge-sensitive amplifier designed at BNL (LArASIC) and send digitized signals to the data aggregator and serializer chip (COLDATA). ColdADC operates with a resolution of 12 bits and a sampling rate of 2 MS/s per channel. A complete characterization of prototype chips was conducted at cryogenic temperature, involving power consumption, noise and linearity performance. In the first DUNE Far-Detector module, 384000 data channels will be read out, corresponding to 24000 ColdADC chips. Therefore, systematic testing of ColdADC chips at cryogenic temperature is vital for the quality and reliability of DUNE Single-Phase modules. We have developed a Quality Control (QC) test stand that includes ColdADC evaluation and characterization at cryogenic temperature. The QC procedure was applied to a first batch of 33 chips, corresponding to 528 data channels. The obtained results meet all the required DUNE specifications for ColdADC. Moreover, the testing outcome allowed us to identify possibilities of performance optimization that are currently being addressed in the design of the next version of the chip. The Quality Control procedure is proved to be successful and will be a reference design for future large-batch production testing of final ColdADC ASICs.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Picosecond Timing Resolution Measurements of Low Gain Avalanche Detectors with a 120 GeV Proton Beam for the TOPSiDE Detector Concept

This paper presents results that take a critical step toward proving 10 ps timing resolution’s feasibility for particle identification in the TOPSiDE detector concept for the Electron-Ion Collider. Measurements of LGADs with a thickness of 35 μm and 50 μm are evaluated with a 120 GeV proton beam. The performance of the gain and timing response is assessed, including the dependence on the reverse bias voltage and operating temperature. The best timing resolution of UFSDs in a test beam to date is achieved using three combined planes of 35 μm thick LGADs at -30°C with a precision of 14.3 ± 1.5 ps.

Particle tracking detectors↗

Demonstration of Energy-Resolved γ-Ray Detection at Room Temperature by the CsPbCl 3 Perovskite Semiconductor

The detection of gamma-rays at room temperature with high-energy resolution using semiconductors is one of the most challenging applications. The presence of even the smallest amount of defects is sufficient to kill the signal generated from gamma-rays which makes the availability of semiconductors detectors a rarity. Lead halide perovskite semiconductors exhibit unusually high defect tolerance leading to outstanding and unique optoelectronic properties and are poised to strongly impact applications in photoelectric conversion/detection. Here we demonstrate for the first time that large size single crystals of the all-inorganic perovskite CsPbCl 3 semiconductor can function as a high-performance detector for gamma-ray nuclear radiation at room temperature. CsPbCl 3 is a wide-gap semiconductor with a bandgap of 3.03 eV and possesses a high effective atomic number of 69.8. We identified the two distinct phase transitions in CsPbCl 3 , from cubic (Pm-3m) to tetragonal (P4/mbm) at 325 K and finally to orthorhombic (Pbnm) at 316 K. Despite crystal twinning induced by phase transitions, CsPbCl 3 crystals in detector grade can be obtained with high electrical resistivity of similar to 1.7 X 10 9 Ω∙cm. The crystals were grown from the melt with volume over several cubic centimeters and have a low thermal conductivity of 0.6 W m -1 K -1 . The mobilities for electron and hole carriers were determined to similar to 30 cm 2 /(V s). Using photoemission yield spectroscopy in air (PYSA), we determined the valence band maximum at 5.66 +/- 0.05 eV. Under gamma-ray exposure, our Schottky-type planar CsPbCl 3 detector achieved an excellent energy resolution (similar to 16% at 122 keV) accompanied by a high figure-of-merit hole mobility-lifetime product (3.2 x 10 -4 cm 2 /V) and a long hole lifetime (16 mu s). The results demonstrate considerable defect tolerance of CsPbCl 3 and suggest its strong potential for gamma-radiation and X-ray detection at room temperature and above.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗