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Results for “Grain Boundaries”
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Understanding the Copassivation Effect of Cl and Se for CdTe Grain Boundaries
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Impact of Photon Recycling, Grain Boundaries, and Nonlinear Recombination on Energy Transport in Semiconductors
Energy carrier transport and recombination in semiconductors can be directly monitored with optical microscopy, revealing key insights into fundamental photophysics and informs efficient optoelectronic device design. Oftentimes, energy transport is measured by monitoring a time-resolved expanding carrier profile after optical excitation under a focused laser beam. Although this approach has gained widespread adoption, the presence of competing dynamic processes, such as diffusion and photon recycling, has made it difficult to accurately extract and understand important semiconductor properties. Here, we develop and apply a new framework for modeling energy transport in both excitonic and free carrier semiconductors. Here, we demonstrate that processes such as nonlinear recombination and photon recycling can have a significant impact on the apparent energy carrier profiles, especially for excitonic materials with short radiative lifetimes. Additionally, we find that film microstructure can lead to unique transport profiles that strongly depends on material boundary behavior and the difference between feature size and diffusion length. Here, these findings provide a deeper understanding of energy transport in semiconducting materials and provide new strategies for the design and optimization of electronic and optoelectronic devices.
Photo-enhanced ionic conductivity across grain boundaries in polycrystalline ceramics
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Intergranular fracture, grain-boundary structure, and dislocation-density interactions in FCC bicrystals
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Irradiation-induced creep in UO 2 : The role of grain boundaries
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Stability of nanocrystalline metals: The role of grain-boundary chemistry and structure
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Grain boundary structure of two-dimensional tellurium revealed by 4D STEM
The recent realization of 2D tellurium (tellurene) has allowed scientists to demonstrate an air-stable monoelemental van der Waals material with remarkable potential for applications in electronics and optoelectronics. The chiral-chain structure of ultrathin Te allows controllable electronic and optical properties due to the non-monotonic carrier mobility and an increase in electronic band-gap as the thickness is reduced. Scalable and accurate production of 2D Te-based functional devices will require detailed knowledge of structural defects and strain field distributions that can be linked to transport properties.
Associating damage nucleation and distribution with grain boundary characteristics in Ta [Poster]
The goal of the project was to develop a void nucleation criterion along with growth information as a function of material microstructure to provide input to damage models.
Elemental Hydrogen Diffusion in fcc-bcc Grain Boundaries
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Molecular Dynamics Studies of Helium Bubble Effects on Grain Boundary Fracture in Fe70Ni11Cr19-1%H Austenitic Stainless Steel.
Abstract not provided.
Probing Grain Boundary Segregation in 304L Stainless Steel using Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS).
Abstract not provided.