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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 433 records · Page 24
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Liquid-phase electroepitaxy - Dopant segregation

A theoretical model is presented which accounts for the dopant segregation in liquid-phase electroepitaxy in terms of dopant transport in the liquid phase (by electromigration and diffusion), the growth velocity, and the Peltier effect at the substrate-solution interface. The contribution of dopant electromigration to the magnitude of the effective segregation coefficient is dominant in the absence of convection; the contribution of the Peltier effect becomes significant only in the presence of pronounced convection. Quantitative expressions which relate the segregation coefficient to the growth parameters also permit the determination of the diffusion constant and electromigration mobility of the dopant in the liquid phase. The model was found to be in good agreement with the measured segregation characteristics of Sn in the electroepitaxial growth of GaAs from Ga-As solutions. For Sn in Ga-As solution at 900 C the diffusion constant was found to be 4 x 10 to the -5 sq cm/s and the electromigration velocity (toward the substrate with a positive polarity 2 x 10 to the -5 cm/s current density of 10 A/sq cm.

Lagowski, J.↗
NASA NTRS1980

Alignment techniques required by precise measurement of effective focal length

The characteristics of false color imagery produced by instrumentation on earth resource mapping satellites are examined. The spatial fidelity of the imagery is dependent upon the geometric accuracy (GA) and the band-to-band registration (BBR) with which the telescope instrument is assembled. BBR and GA require knowledge of telescope effective focal length (EFL) to one part in 10,000 in order that the next generation of earth mappers be able to carry out their missions. The basis for this level of precision is briefly considered, and a description is given of the means by which such precise EFL measurements have been carried out. Attention is given to accuracy requirements, the technique used to measure effective focal length, possible sources of error in the EFL measurement, approaches for eliminating errors, and the results of the efforts to control measurement errors in EFL determinations.

Wise, T. D.↗
NASA NTRS1981

The state of the art of general aviation autopilots - Now and in the future

A study was performed under contract with NASA-Langley Research Center to document the state of the art of general aviation (GA) autopilots and provide information about the current status of GA autopilot technology. Results are based on findings obtained from general and product literature, as well as interviews with manufacturers, users and service centers. The autopilot systems are divided into three categories - wing leveler, automatic, and integrated flight control systems, and a listing of currently available autopilots and their available options is presented. Various autopilot components are discussed, such as the display, data entry devices, and computers; gyroscopes, altitude sensors, airspeed sensors and accelerometers are presented as the primary sensor types. Electromechanical servos, pneumatic and hydraulic actuators are compared in their ability to improve airframe response. Recommendations concerning potential areas of further research and possible areas of improvement are also presented.

Roskam, J.↗
NASA NTRS1982

An investigation of the aerodynamic characteristics of a new general aviation airfoil in flight

A low speed airfoil, the GA(W)-2, - a 13% thickness to chord ratio airfoil was evaluated. The wing of a Beech Sundowner was modified at by adding balsa ribs and covered with aluminum skin, to alter the existing airfoil shape to that of the GA(W)-2 airfoil. The aircraft was flown in a flight test program that gathered wing surface pressures and wake data from which the lift drag, and pitching moment of the airfoil could be determined. After the base line performance of the airfoil was measured, the drag due to surface irregularities such as steps, rivets and surface waviness was determined. The potential reduction of drag through the use of surface coatings such as KAPTON was also investigated.

Gregorek, G. M.↗
NASA NTRS1982

An investigation of impurity centers in semiconductors of variable composition. Part 1: General theory and some applications

A theory of deep point defects imbedded in otherwise perfect semiconductor crystals is developed with the aid of pseudopotentials. The dominant short-range forces engendered by the impurity are sufficiently weakened in all cases where the cancellation theorem of the pseudopotential formalism is operative. Thus, effective-mass-like equations exhibiting local effective potentials derived from nonlocal pseudopotentials are shown to be valid for a large class of defects. A two-band secular determinant for the energy eigenvalues of deep defects is also derived from the set of integral equations which corresponds to the set of differential equations of the effective-mass type. Subsequently, the theory in its simplest form, is applied to the system Al(x)Ga(1-x)As:Se. It is shown that the one-electron donor level of Se within the forbidden gap of Al(x)Ga(1-x)As as a function of the AlAs mole fraction x reaches its maximum of about 300 meV (as measured from the conduction band edge) at the cross-over from the direct to the indirect band-gap at x = 0.44 in agreement with experiments.

Vonroos, O. H.↗
NASA NTRS1982

Use of column V alkyls in organometallic vapor phase epitaxy (OMVPE)

The use of the column V-trialkyls trimethylarsenic (TMAs) and trimethylantimony (TMSb) for the organometallic vapor phase epitaxy (OM-VPE) of III-V compound semiconductors is reviewed. A general discussion of the interaction chemistry of common Group III and Group V reactants is presented. The practical application of TMSb and TMAs for OM-VPE is demonstrated using the growth of GaSb, GaAs(1-y)Sb(y), Al(x)Ga(1-x)Sb, and Ga(1-x)In(x)As as examples.

Ludowise, M. J.↗
NASA NTRS1984

Defect studies in one MeV electron irradiated GaAs and in Al/sub x Ga/sub l-x As P-N junction solar cells

Deep level transient spectroscopy reveals that the main electron traps for one-MeV electron irradiated GaAs cells are E9c)-0.31, E(c)-0.90 eV, and the main hole trap is due to the level. Electron trap density was found to vary from 3/tens-trillion ccm for 2/one quadrillion cm 3/3.7 quadrillion cm for 21 sextillion cm electron fluence for electron fluence; a similar result was also obtained for the hole trap density. As for the grown-in defects in the Al(x)Ga(1-x)As p-n junciton cells, only two electron traps with energies of E(c)-0.20 and E(c)-0.34 eV were observed in samples with x = 0.17, and none was found for x 0.05. Auger analysis on the Al(x)Ga(1-x) As window layer of the GaAs solar cell showed a large amount of oxygen and carbon contaminants near the surface of the AlGaAs epilayer. Thermal annealing experiment performed at 250 C for up to 100 min. showed a reduction in the density of both electron traps.

Li, S. S.↗
NASA NTRS1982

On the behaviour and origin of the major deep level (EL2) in GaAs

In an extensive crystal growth and characterization study of Bridgman-grown GaAs it was established that the following factors affect the concentration of the EL2 level: (1) the As pressure during growth; (2) the partial pressure of Ga2O; (3) the concentration of shallow donors and acceptors; and (4) the post-growth cooling cycle. The role of these factors is qualitatively and quantitatively explained by attributing the 0.82 eV donor state to the antisite defect As-sub-Ga formed as a result of Ga-vacancy migration during the post-growth cooling of the crystals.

Lagowski, J.↗
NASA NTRS1983

Geochemical evidence bearing on the origin of aerobiosis, a speculative hypothesis

It is pointed out that the atmosphere and hydrosphere of the early Archean earth were essentially anoxic. The paleontological record shows that life existed in spite of the absence of oxygen. The present investigation is concerned with the presentation of a plausible sequence of events, linking features in the carbon isotopic record to the origin of oxygenic photosynthesis. The investigation takes into account that the record of carbon isotopic abundances in sedimentary organic matter displays marked variations about 2.8 Ga before the present. At least by 2.8 Ga before the present, if not before, something in the carbon cycle began to allow the incorporation in sediments of organic material extraordinarily depleted in C-13. Attention is given to a model for the development of C-13 depleted kerogens, conclusions regarding the late Archean carbon cycle, and the transition in the global ecosystem.

Hayes, J. M.↗
NASA NTRS1984

Synthesis of proterozoic data as a prerequisite for tectonic and thermal modeling

Rocks of the Pongola supergroup form an elongate belt in the Archean Kaapvaal Caton of southern Africa. Because these rocks exhibit many features that are characteristic of rocks deposited in continental rifts, it is suggested that the Pongola supergroup was deposited in such a rift. The age of these rocks (approximately 3.0 Ga) makes the Pongola structure the world's oldest well-preserved rift so far recognized, and comparison of the Pongola Rift with other rifts formed more recently in Earth history reveals striking similarities. Rocks of the Ventersdorp Supergroup were deposited in a system of northeast trending grabens on the Kaapvaal Craton approximately 2.64 Ga ago. It is suggested that it was this collision which initiated the Ventersdorp rifting. The Ventersdorp rift province is related to an extension in the Kaapval Craton associated with the collision.

Burke, K. C.↗
NASA NTRS1985

Archean sedimentary systems and crustal evolution

Current knowledge of preserved Archean sedimentary rocks suggests that they accumulated in at least three major depositional settings. These are represented generally by sedimentary units: (1) in early Archean, pre-3.0 Ga old greenstone belts, (2) on late Archean sialic cratons, and (3) in late Archean, post-3.0 Ga old greenstone belts. Research suggests that the Archean was characterized by at least two distinctive and largely diachronous styles of crustal evolution. Thick, stable early Archean simatic platforms, perhaps analogous to modern oceanic islands formed over hot spots, underwent a single cycle of cratonization to form stable continental blocks in the early Archean. Later formed Archean continents show a two stage evolution. The initial stage is reflected in the existence of older sialic material, perhaps representing incompletely cratonized areas or microcontinents of as yet unknown origin. During the second stage, late Archean greenstone belts, perhaps analogous to modern magmatic arcs or back arc basins, developed upon or adjacent to these older sialic blocks. The formation of this generation of Archean continents was largely complete by the end of the Archean. These results suggest that Archean greenstone belts may represent a considerable range of sedimentological and tectonic settings.

Lowe, D. R.↗
NASA NTRS1985

Containerless Studies of Nucleation and Undercooling

The long term research goals are to perform experiments to determine the achievable limits of undercooling, the characteristics of heterogeneous nucleation, and the physical properties of significantly undercooled melts. The techniques used are based on the newly developed containerless manipulation methods afforded by acoustic levitation. Ground based investigations involved 0.1 to 2 mm specimens of pure metals and alloys (In, Ga, Sn, Ga-In, ...) as well as glass-forming organic compounds (O-Terphenyl). A currently operating ultrasonic high temperature apparatus has allowed the ground-based levitation of 1 to 2 mm samples of solid aluminum at 550 deg C in an argon atmosphere. Present work is concentrating on the undercooling of pure metal samples (In, Sn), and on the measurements of surface tension and viscosity of the undercooled melts via shape oscillation techniques monitored through optical detection methods. The sound velocity of undercooled O-Terphenyl is being measured in an immiscible liquid levitation cells.

Trinh, E. H.↗
NASA NTRS1986

Tectonic evolution of greenstone-Gneiss association in Dharwar Craton, South India: Problems and perspectives for future research

The two fold stratigraphic subdivision of the Archean-Proterozoic greenstone-gneiss association of Dharwar craton into an older Sargur group (older than 2.9 Ga.) and a younger Dharwar Supergroup serves as an a priori stratigraphic model. The concordant greenstone (schist)-gneiss (Peninsular gneiss) relationships, ambiguities in stratigraphic correlations of the schist belts assigned to Sargur group and difficulties in deciphering the older gneiss units can be best appreciated if the Sargur group be regarded as a trimodal association of: (1) ultrabasic-mafic metavolcanics (including komatiites), (2) clastic and nonclastic metasediments and paragneisses and (3) mainly tonalite/trondhemite gneisses and migmatites of diverse ages which could be as old as c. 3.4 ga. or even older. The extensive occurrence of this greenstone-gneiss complex is evident from recent mapping in many areas of central and southern Karnataka State.

Rao, Y. J. B.↗
NASA NTRS1986

Tectonic setting and evolution of late Archaean greenstone belts of Superior Province, Canada

Late Archean (3.0-2.5 Ga) greenstone belts are a major component of the Superior Province of the Canadian Shield where alternating, metavolcanic - rich and metasedimentary - rich subprovinces form a prominent central striped region bordered in part by high-grade gneiss subprovinces, the Pikiwitonei and Minto in the north, and the Minnesota River Valley in the south. The high-grade gneiss subprovinces are characterized by granulite facies gneiss of plutonic and supracrustal origin, and by abundant plutonic rocks. Minnesota River Valley has rocks older than 3.5 Ga; absolute ages of Pikiwitonei and Minto rocks are unknown but Minto does have north-south structural trends distinctive from the dominant east-west structures of Superior Province. A discussion follows.

Card, K. D.↗
NASA NTRS1986

Optical constants of GaAs-AlGaAs superlattices and multiple quantum wells

The optical properties of GaAs-Al sub x Ga sub 1-xAs superlattices are calculated as a function of the frequency and superlattice structure. The comutations are performed using a partition method which combines the vectors k.p method with the pseudopotential technique. The influence of the super-structure on the electronic properties of the systems is accounted for by appropriate quantization conditions. The anisotropy and structure dependence of the dielectric constant result mainly from the contribution of the gamma region while the contributions of the other regions of the Brillouin zone are rather insensitive to the superlattice structure. The superlattice index of refraction values are shown to attain maxima at the various quantized transition energies, where for certain structures, the difference between the refractive indices of the superlattices and its corresponding Al sub x Ga sub 1-xAs alloy can be as large as 2%. In general results are in good agreement with the experimental data.

Kahen, K. B.↗
NASA NTRS1985

Cryogenic operation of pseudomorphic AlGaAs/InGaAs single-quantum-well MODFETs

The 77 K operation of AlGaAs/InGaAs MODFETs has been investigated. The structures, grown by MBE, make use of a 200 A undoped In(0.15)Ga(0.85)As quantum well for electron confinement and an Si-doped Al(0.15)Ga(0.85)As top barrier. The MODFETs with 1 micron gate lengths exhibit extrinsic transconductances of 360 mS/mm and maximum currents of 310 mA/mm at 77 K. The use of a low Al mole fraction AlGaAs/InGaAs heterojunction makes it possible to avoid the persistent trapping effects encountered in AlGaAs/GaAs MODFETs without sacrificing device performance.

Masselink, W. T.↗
NASA NTRS1986

Dc and microwave characteristics of a high current double interface GaAs/InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistor

Extremely large current double interface GaAs/In(0.15)Ga(0.85)As/Al(0.15)Ga(0.85)As pseudomorphic modulation-doped field-effect transistors (MODFET's) grown by molecular beam epitaxy were achieved. The 1-micron gate devices studied have peak current levels (430 mA/mm at 300 K and 483mA/mm at 77 K) roughly one and a half to two times that found in single interface pseudomorphic MODFET's. These devices also retain high transconductances over a broad range of gate voltage, peaking at 312 mS/mm at 300 K and 362 mS/mm at 77 K. Excellent microwave performance is also obtained with a maximum frequency of oscillation (f-max) of 37 GHz and a current gain cut-off frequency of as high as 23 GHz at 300 K. An output power level of 14 dBm (1 dB gain compression) was obtained at 6 GHz for a 290-micron gate width. This double interface single quantum well MODFET may be of great importance in millimeter wave power amplifiers.

Henderson, T.↗
NASA NTRS1986

Formation of a pn junction on an anisotropically etched GaAs surface using metalorganic chemical vapor deposition

A continuous p-type GaAs epilayer has been deposited on an n-type sawtooth GaAs surface using MOCVD. A wet chemical etching process was used to expose the intersecting (111)Ga and (-1 -1 1)Ga planes with 6-micron periodicity. Charge-collection microscopy was used to verify the presence of the pn junction thus formed and to measure its depth. The ultimate goal of this work is to fabricate a V-groove GaAs cell with improved absorptivity, high short-circuit current, and tolerance to particle radiation.

Leon, R. P.↗