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A unique characteristic of every semiconductor is the amount of energy required to break an electron bond in the lowest band of allowed states, the valence band. The energy necessary to set an electron free and allow it to conduct in the material is termed the energy gap (Eg). Semiconductors with wide bandgap energies have been shown to possess properties for high power, high temperature, radiation resistance damage, and short wavelength optoelectronic applications. Gallium nitride, which has a wide gap of 3.39 eV, is a material that has demonstrated these characteristics. Various growth conditions are being investigated for quality gallium nitride heteroepitaxy growth via the technique of low pressure metal organic chemical vapor deposition (MOCVD) that can be used for device development.
The effect of the chemical state of the surface of nanoparticles on the relaxation in the near-surface layer was examined using the concept of the apparent lattice parameter (alp) determined for different diffraction vectors Q. The apparent lattice parameter is a lattice parameter determined either from an individual Bragg reflection, or from a selected region of the diffraction pattern. At low diffraction vectors the Bragg peak positions are affected mainly by the structure of the near-surface layer, while at high Q-values only the interior of the nano-grain contributes to the diffraction pattern. Following the measurements on raw (as prepared) powders we investigated powders cleaned by annealing at 400C under vacuum, and the same powders wetted with water. Theoretical alp-Q plots showed that the structure of the surface layer depends on the sample treatment. Semi-quantitative analysis based on the comparison of the experimental and theoretical alp-Q plots was performed. Theoretical alp-Q relations were obtained from the diffraction patterns calculated for models of nanocrystals with a strained surface layer using the Debye functions.
Ballistic-electron-emission microscopy (BEEM) and spectroscopy have been used to investigate the properties of Au/GaN interfaces.
A system for detecting chemical/biological substances and a detection method. The system comprises a plurality of sensing units or nodes and a radiofrequency link. Each unit has several sensors with different sensing curves. Each sensor is able to transmit information related to the sensed substance on a specific frequency. The sensors preferably comprise AlGaN/GaN high electron mobility transistors.
High-resolution submillimeter/terahertz spectroscopy is important for studying atmospheric and interstellar molecular gaseous species. It typically uses heterodyne receivers where an unknown (weak) signal is mixed with a strong signal from the local oscillator (LO) operating at a slightly different frequency. The non-linear mixer devices for this frequency range are unique and are not off-the-shelf commercial products. Three types of THz mixers are commonly used: Schottky diode, superconducting hot-electron bolometer (HEB), and superconductor-insulation-superconductor (SIS) junction. A HEB mixer based on the two-dimensional electron gas (2DEG) formed at the interface of two slightly dissimilar semiconductors was developed. This mixer can operate at temperatures between 100 and 300 K, and thus can be used with just passive radiative cooling available even on small spacecraft.
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The power systems for use in NASA space missions must work reliably under harsh conditions including radiation, thermal cycling, and exposure to extreme temperatures. Gallium nitride semiconductors show great promise, but information pertaining to their performance is scarce. Gallium nitride N-channel enhancement-mode field effect transistors made by EPC Corporation in a 2nd generation of manufacturing were exposed to radiation followed by long-term thermal cycling in order to address their reliability for use in space missions. Results of the experimental work are presented and discussed.
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As we pursue the advancement of small satellites for space missions with more capabilities, there is a significant need for cutting-edge, modularly configurable, high density power converters. This article proposes a fixed switching frequency, high efficiency, compact isolated converter for sensitive loads such as radar, communication systems, or other instruments on small satellites.
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