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At least 433 records · Page 24
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Resistivity of Surface Steps in Bulk-Insulating Topological Insulators

Electron transport in topological insulators usually involves both topologically protected surface states and trivial electronic states in the bulk material. The surface transport is particularly interesting; however, it is also susceptible to atomic defects on the surfaces, such as vacancies, impurities, and step edges. Experimental determination of scattering effects of these surface defects requires both nanoscale spatial resolution and the ability to decipher surface transport from bulk transport. Here we directly measure the resistivity of individual surface steps in the surface dominating transport process of topological insulator Bi 2 Te 2 Se. A variable probe-spacing transport spectroscopy with a multiprobe scanning tunneling microscope is used to differentiate the surface conductance from bulk conductance, allowing the identification of a surface dominant transport regime. The technique also reveals a deviation from ideal 2D transport at atomic steps. Then, a multi-probe scanning tunneling potentiometry is employed to visualize the electrochemical potentials across individual step edges. A quantitative analysis of the potential distributions enables us to acquire a resistivity of 0.530 mΩ · cm for the one quintuple-layer atomic step. The result indicates that atomic defects, despite preserving the time-reversal symmetry, can still significantly affect the transport in topological insulators.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Electromagnetic response and emergent topological orders in transition metal dichalcogenide MoTe 2 bilayers

Twisted bilayer transition metal dichalcogenides, such as MoTe 2 , provide a versatile platform for exploring correlated topological phases. This work investigates the interplay between perpendicular magnetic and electric fields in tuning the electronic structure and emergent topological orders of twisted bilayer MoTe 2 (t-MoTe 2 ) across two distinct regimes: a low-twist-angle phase (θ ≈ 2.1°) hosting multiple Chern bands of identical Chern numbers per valley, and a higher-angle phase (θ ≈ 3.89°) featuring Haldane-like bands with opposite Chern numbers. Using a continuum model incorporating moiré potentials up to second harmonics, we compute the Hofstadter fractal spectra under applied fields, revealing Landau fan structures and magnetic-flux-dependent band topology. These fractal spectra are useful in studying emergent topological orders in terms of the composite fermion picture, where the statistical Chern-Simons flux is approximated as a uniform gauge field. We demonstrate that the system hosts both Jain-sequence fractional Chern insulators (FCIs) and non-Jain fractal FCIs with higher Chern numbers. As a result, the electric field suppresses composite fermion gaps and induces topological quantum phase transitions. Furthermore, our analysis extends to valley-contrasting flux attachment, proposing pathways to describe fractional quantum spin Hall states.

Anyons↗
DOE OSTI2023

Controllable topological insulator phases in litharge-phase InBi monolayer

Despite recent advances of layered square-net topological material models that possess ideal semimetallic electronic structures and promising potential in material applications, the identification of experimentally accessible two-dimensional square-net materials with related topological properties has proven challenging. Due to the highly tunable physical and topological properties of III-V semiconductors, we revisit the class of III-V materials and observe that the litharge-phase InBi is a layered square-net material and can be exfoliated into the InBi monolayer. We present a comprehensive first-principles study of the energy landscape of the InBi monolayer. We identify a paraelastic phase and three ferroelastic phases and study their topological properties. Specifically, we show that the paraelastic InBi monolayer is a trivial insulator due to the orbital-ordering-induced band inversion occurring between states with the same parity. Substituting one Bi atom per cell with another V-group element (N, P, As) or applying an electric field that breaks the inversion symmetry and changes the orbital onsite energy, the paraelastic InBi monolayer can be driven into the topological insulator phase. Furthermore, one of the ferroelastic phases of pure InBi, which can be obtained by gently straining the paraelastic phase, also possesses such topological insulating properties. Furthermore, these results provide several experimentally accessible routes to tune the nontrivial topology in the InBi monolayer, including creating heterostructures with piezoelectric or ferroelectric substrates and applying mechanical strain, making the InBi monolayer an ideal platform to study the interplay of reduced dimensionality, square-net chemical bonding networks, and band topology.

2-dimensional systems↗
DOE OSTI2019

Millimetre-long transport of photogenerated carriers in topological insulators

Excitons are spin integer particles that are predicted to condense into a coherent quantum state at sufficiently low temperature. Here by using photocurrent imaging we report experimental evidence of formation and efficient transport of non-equilibrium excitons in Bi 2-x Sb x Se 3 nanoribbons. The photocurrent distributions are independent of electric field, indicating that photoexcited electrons and holes form excitons. Remarkably, these excitons can transport over hundreds of micrometers along the topological insulator (TI) nanoribbons before recombination at up to 40 K. The macroscopic transport distance, combined with short carrier lifetime obtained from transient photocurrent measurements, indicates an exciton diffusion coefficient at least 36 m 2 s -1 , which corresponds to a mobility of 6 × 104 m 2 V -1 s -1 at 7 K and is four order of magnitude higher than the value reported for free carriers in TIs. The observation of highly dissipationless exciton transport implies the formation of superfluid-like exciton condensate at the surface of TIs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Organismic materials for beyond von Neumann machines

The elementary basis of intelligence in organisms with a central nervous system includes neurons and synapses and their complex interconnections forming neural circuits. In non-neural organisms such as slime mold with gel-like media, viscosity modulation enables adaptation to changing environments. At a larger scale, collective intelligence emerges via social interactions and feedback in animal colonies. Learning and memory are therefore multi-scale features that evolve as a result of constant interactions with the environment. There is growing interest in emulating such features of intelligence in computing machines and autonomous systems. Materials that can respond to their environment in a manner similar to organisms (referred to as "organismic materials") therefore may be of interest as hardware components in artificial intelligence machines. In this brief review, we present a class of semiconductors called correlated oxides as candidates for learning machines. The term "correlated" refers to the fact that electrons in such lattices strongly interact and the ground state is not what is predicted by classical band theory. Such materials can undergo insulator-metal transitions at near ambient conditions under external stimuli such as thermal or electrical fields, strain, and chemical doping. Depending on the mechanism driving the transition, intermediate states can be metastable with different volatilities, and the time scales of phase change can be controlled over many orders of magnitude. The change in electronic properties can be sharp or gradual, leading to digital or analog behavior. These properties enable the realization of artificial neurons and synapses and emulate the associative and non-associative learning characteristics found in various organisms. We examine microscopic properties concerning electronic and structural transitions leading to collective behavior and theoretical treatments of the ground state and dynamical response, showcasing VO 2 as a model system. Next, we briefly review algorithms designed from the plasticity demonstrated by phase changing systems. Finally, we conclude the brief review with suggestions for future research toward realizing non-von Neumann machines.

42 ENGINEERING↗
DOE OSTI2020

Demonstration of GaN-based metal–insulator–semiconductor junction by hydrogen plasma treatment

We demonstrate a nickel/insulating-GaN (i-GaN)/p-type GaN junction and investigate its electrical properties. The i-GaN is formed by exposure to a low-power hydrogen plasma to passivate the p-GaN layer. Cathodoluminescence spectroscopy of the i-GaN is used to understand the passivation effect of the hydrogen plasma on p-GaN. The junction shows very low leakage (<10−9 A at −50 V), excellent rectifying properties (∼107), high temperature stability, and blue light electroluminescence at forward bias. A bandgap model is proposed to illustrate the electrical properties of hydrogenated p-GaN and to understand the device characteristics.

Yang, Chen (ORCID:0000000230090882)↗
DOE OSTI2021

Reliability Analysis of Large-Area, Low Pressure-Assisted Silver Sintering for Medium-Voltage Power Modules

Multi-layer insulating ceramic substrates can enable medium-voltage (MV) power modules with reduced peak electric field. This benefit is particularly important for MV silicon carbide (SiC) MOSFETs due to their higher operating voltages. Large-area, low-pressure assisted silver sintering is a potential solution for bonding substrates to create a multi-layer structure. The voiding content and defect density of the bond used to create the multi-layer substrate stack-up is critical to the reliability of the power module and the thermal performance, as this bond is in the primary path for heat dissipation in the power module structure. Here, samples of two-layer direct bonded aluminum (DBA) stacks have been fabricated and subjected to thermal cycling to analyze their reliability. Passive thermal cycling from -40 degrees C to 200 degrees C was performed. Cross-sections were cut at pre-determined intervals and imaged with Scanning Electron Microscopy (SEM). After 1000 thermal cycles, adhesive failures are observed between the sintered silver and the DBA surface. Cross-sections were cut and imaged via optical microscope and SEM. Thermal analyzer measurements are recorded on a 10-kV SiC power module utilizing the sintered DBA substrate stacks.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2021

Hardware Design of Medium Voltage SiC-Based Modular Multilevel Converters for Grid-Tied Applications

This paper presents a design of a 10 kV silicon carbide (SiC) MOSFET based modular multilevel converter (MMC). The MMC functions as the interconnection between a 24 kV dc bus and a 13. SkV distribution grid. This paper focuses on the hardware design of the MMC and its submodules. The gate driver, auxiliary power supply and bus bur in submodules are major components that need to meet high dv/dt immunity and high insulation voltage requirements. The gate driver achieves over 200 kV/us common mode transient immunity (CMTI). Its associated auxiliary power supply is based on an on-board transformer with over 30 kV insulation capability and 1.4 pF barrier capacitance. The busbar achieves less than 11 kV/cm electric field in the air to avoid partial discharges. Validation tests of the MMC submodule were performed by double pulse tests at 5 kV and buck converter tests at3 kV, 52A (peak). Reliable operations were achieved in validation tests.

auxiliary power supply↗
DOE OSTI2021

High-voltage insulator having multiple materials

High-voltage insulators are disclosed that are capable of handling diverse requirements, such as providing high standoff voltages, high temperature cycling, and the ability to withstand flexural stress. One high-voltage insulator includes a first piece formed from a first material, a second piece formed from a second material, and an interface section where the first piece contacts with and forms a seal with the second piece. The interface includes a first groove located that accommodates a first gasket, sets of matching threads on the first and second pieces. The interface section further accommodates a second gasket. In this multi-piece high-voltage insulator, the first material can have a first set of flexural, heat resistance, and electrical standoff characteristics suitable for a first environment, and the second material can have a second set of flexural, heat resistance and electrical standoff characteristics suitable for a second environment.

Podpaly, Yuri Anatoly↗
DOE OSTI2023

Direct write sensors

A method of making an acoustic wave sensor includes the steps of providing a piezoelectric substrate layer and printing on the substrate layer a sensor layer comprising a first interdigitated acoustic wave transducer, a sensing film, and positioned on an opposing side of the sensing film from the first interdigitated acoustic wave transducer at least one selected from the group consisting of a second interdigitated acoustic wave transducer and a Bragg reflector. An insulation layer can be printed. An antenna can be printed in an antenna layer, and the insulation layer can be interposed between the antenna layer and the sensor layer. An electrical connection can be printed between the antenna and the first interdigitated acoustic wave transducer. An acoustic wave sensor is also disclosed.

McIntyre, Timothy J.↗
DOE OSTI2023

High-voltage insulators having multiple materials

High-voltage insulators are disclosed that are capable of handling diverse requirements, such as providing high standoff voltages, high temperature cycling, and the ability to withstand flexural stress. One high-voltage insulator includes a first piece formed from a first material, a second piece formed from a second material, and an interface section where the first piece contacts with and forms a seal with the second piece. The interface includes a first groove located that accommodates a first gasket, sets of matching threads on the first and second pieces. The interface section further accommodates a second gasket. In this multi-piece high-voltage insulator, the first material can have a first set of flexural, heat resistance, and electrical standoff characteristics suitable for a first environment, and the second material can have a second set of flexural, heat resistance and electrical standoff characteristics suitable for a second environment.

Podpaly, Yuri Anatoly↗
DOE OSTI2023

Technology Strategy Assessment: Findings from Storage Innovations 2030 Supercapacitors

Electrochemical capacitors, which are commercially called supercapacitors or ultracapacitors, are a family of energy storage devices with remarkably high specific power compared with other electrochemical storage devices. Supercapacitors do not require a solid dielectric layer between the two electrodes, instead they store energy by accumulating electric charge on porous electrodes filled with an electrolyte solution and separated by an insulating porous membrane. Supercapacitors offer large specific capacitance and high power output. They can be charged and discharged very quickly, offer excellent cycle life and long operational life, and operate over a broad temperature range. The major drawbacks of supercapacitors are low energy density and a high self-discharge rate. For example, a supercapacitor passively discharges from 100% to 50% in a month compared with only 5% for a lithium-ion battery [1]. The high capital cost and low energy density of supercapacitors make the unit cost of energy stored ($/kWh) more expensive than alternatives such as batteries. Their attributes make them attractive for uses in which frequent small charges/discharges are required (e.g., ensuring power quality or providing frequency regulation). Their attributes and cost make them less attractive for long-duration energy storage, which favors technologies with low self-discharge that cost less per unit of energy stored.

25 ENERGY STORAGE↗
DOE OSTI2022

Review of recent studies on nanoscale electrical junctions and contacts: Quantum tunneling, current crowding, and interface engineering

The study of charge carrier transport at nanoscale electrical contacts is crucial for the development of next-generation electronics. In this study, we review recent modeling efforts on quantum tunneling, current crowding, and contact resistance across electrical interfaces with nanometer scale dimensions. A generalized self-consistent model for quantum tunneling induced electron transport in metal–insulator–metal (MIM) junctions is summarized. Rectification of a dissimilar MIM junction is reviewed. A modified two-dimensional (2D) transmission line model is used to investigate the effects of spatially varying specific contact resistivity along the contact length. The model is applied to various types of electrical contacts, including ohmic contacts, MIM junction based tunneling contacts, and 2D-material-based Schottky contacts. Roughness engineering is recently proposed to offer a possible paradigm for reducing the contact resistance of 2D-material-based electrical contacts. Contact interface engineering, which can mitigate current crowding near electrical contacts by spatially designing the interface layer thickness or properties, without requiring an additional material or component, is briefly reviewed. Tunneling engineering is suggested to eliminate severe current crowding in highly conductive ohmic contacts by introducing a thin tunneling layer or gap between the contact members. Furthermore, unsolved problems and challenges are also discussed.

2D materials↗
DOE OSTI2025

Electro-Thermo-Mechanical (ETM) Study on Submarine Dynamic Power Cables (SDPC) for Offshore Wind Transmission

Understanding the failure mechanisms of submarine dynamic power cables (SDPC) is critical for innovative design to meet the 2035 cost reduction target of U.S. DOE Floating Offshore Wind Shot. This is important because the current design suffers a significant failure rate in the field. This project conducted a systematic electro-thermo-mechanical (ETM) experimental study on the power cores extracted from a 15kV power cable with three cores of copper conductor, ethylene propylene rubber (EPR) insulation, and continuously corrugated welded aluminum armor (CCWA). An ETM testing system was developed by integrating a high voltage (HV) amplifier, two ceramic heaters, and a rod-plate transverse compression setup into a mechanical testing machine. Increasing temperature from room temperature (RT, 22 degree C) to 90 degree C resulted in the 67% decrease in the failure mechanical load as defined by the dielectric breakdown. Under creep mechanical loading, the dielectric breakdown time was decreased by 70% for a given mechanical load when the specimen temperature increased from RT to 90oC. The failure strain in both monotonic and creep mechanical loading modes was related to the maximum mechanical load applied. Although the dielectric breakdown occurred in the ETM test, the post-test measurement revealed an impressive recovery of electric resistance. The failure analysis on cross section of tested specimens indicated a sizable gap across insulation layer near the area between copper conductor and loading rod, which apparently resulted from online dielectric failure and offline elastic recovery of components including conductor and insulation layer.

17 WIND ENERGY↗
DOE OSTI2024

Suppression of metal-to-insulator transition and stabilization of superconductivity by pressure in Re 3 Ge 7

The effect of pressure on the low-temperature states of the Re 3 ⁡Ge 7 is investigated by both electrical and Hall resistance and magnetization measurements. At ambient pressure, the temperature-dependent resistance of Re 3 ⁡Ge 7 behaves quasilinearly from room temperature down to 60 K, then undergoes a two-step metal-to-insulator transition (MIT) at temperatures T 1 =59.4K and T 2 =58.7K, which may be related to a structural phase transition or occurrence of charge-density wave ordering. Upon applying pressure, the two-step (T 1 ,T 2 ) MIT splits into three steps (T 1 ,T 2 . and T 3 ) above 1 GPa, and all traces of MITs are fully suppressed by ~8 GPa. Subsequently, the onset of bulk superconductivity (SC) occurs between 10.8 and 12.2 GPa and persists to our highest pressure of 26.8 GPa. At 12.2 GPa the superconducting transition temperature, T c , and upper critical field, H c ⁢2 reach the maximum of T c (onset) ~5.9 K and H c ⁢2 (1.8 K) ~14 kOe. Finally, our results not only present the observation of SC under high pressure in Re 3 ⁡Ge 7 but also delineate the interplay between SC and other competing electronic states by creating a T-p phase diagram for this potentially topologically nontrivial system Re 3 ⁡Ge 7 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Voltage-Controlled Magnetic Reversal in Orbital Chern Insulators

Chern insulator ferromagnets are characterized by a quantized anomalous Hall effect and have so far been identified experimentally in magnetically doped topological insulator thin films and in bilayer graphene moiré superlattices. We classify Chern insulator ferromagnets as either spin or orbital, depending on whether the orbital magnetization results from spontaneous spin polarization combined with spin-orbit interactions, as in the magnetically doped topological insulator case, or directly from spontaneous orbital currents, as in the moiré superlattice case. We argue that, in a given magnetic state, characterized, for example, by the sign of the anomalous Hall effect, the magnetization of an orbital Chern insulator will often have opposite signs for weak n and weak p electrostatic or chemical doping. Finally, this property enables pure electrical switching of a magnetic state in the presence of a fixed magnetic field.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Republished: Colossal density-driven resistance response in the negative charge transfer insulator MnS 2

The Mn chalcogenides show a remarkable variation in structural and physical properties with density. In MnS 2 we observe a pronounced difference with the effects of varying hydrostaticity with pressure inducing a structural transition at 300 K. Within the pyrite phase, a colossal electrical resistance drop of 10 8 Ohms is observed by 12 GPa of nonhydrostatic compression at 300 K. DFT simulations reveal the metallization to be unexpectedly driven by previously unoccupied S$^{2-}_2$ σ$^*_{3p}$ antibonding states crossing the Fermi level. This is a seldom seen variant of the charge transfer insulator to metal transition for negative charge transfer insulators which have anions with an unsaturated valence. Finally, by 36 GPa of nonhydrostatic compression, the single presence of the low-spin insulating arsenopyrite (P2 1 /c) phase is confirmed, and the bulk metallicity is broken with the system returning to an insulative electronic state.

36 MATERIALS SCIENCE↗