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At least 433 records · Page 24

Phase-field modeling of stored-energy-driven grain growth with intra-granular variation in dislocation density

Abstract We present a phase-field (PF) model to simulate the microstructure evolution occurring in polycrystalline materials with a variation in the intra-granular dislocation density. The model accounts for two mechanisms that lead to the grain boundary migration: the driving force due to capillarity and that due to the stored energy arising from a spatially varying dislocation density. In addition to the order parameters that distinguish regions occupied by different grains, we introduce dislocation density fields that describe spatial variation of the dislocation density. We assume that the dislocation density decays as a function of the distance the grain boundary has migrated. To demonstrate and parameterize the model, we simulate microstructure evolution in two dimensions, for which the initial microstructure is based on real-time experimental data. Additionally, we applied the model to study the effect of a cyclic heat treatment (CHT) on the microstructure evolution. Specifically, we simulated stored-energy-driven grain growth during three thermal cycles, as well as grain growth without stored energy that serves as a baseline for comparison. We showed that the microstructure evolution proceeded much faster when the stored energy was considered. A non-self-similar evolution was observed in this case, while a nearly self-similar evolution was found when the microstructure evolution is driven solely by capillarity. These results suggest a possible mechanism for the initiation of abnormal grain growth during CHT. Finally, we demonstrate an integrated experimental-computational workflow that utilizes the experimental measurements to inform the PF model and its parameterization, which provides a foundation for the development of future simulation tools capable of quantitative prediction of microstructure evolution during non-isothermal heat treatment.

Materials Science↗

Nucleation of Dislocations in 3.9 nm Nanocrystals at High Pressure

As circuitry approaches single nanometer length scales, it has become important to predict the stability of single nanometer-sized metals. The behavior of metals at larger scales can be predicted based on the behavior of dislocations, but it is unclear if dislocations can form and be sustained at single nanometer dimensions. Here, we report the formation of dislocations within individual 3.9 nm Au nanocrystals under nonhydrostatic pressure in a diamond anvil cell. We used a combination of x-ray diffraction, optical absorbance spectroscopy, and molecular dynamics simulation to characterize the defects that are formed, which were found to be surface-nucleated partial dislocations. These results indicate that dislocations are still active at single nanometer length scales and can lead to permanent plasticity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

On the velocity dependence of the dislocation drag coefficient from phonon wind

The phonon wind mechanism, that is, the anharmonic interaction and scattering of phonons by a moving dislocation, imparts a drag force B (v,T,ρ) v on the dislocation. The drag coefficient B has been previously computed and experimentally determined only for dislocation velocities v much less than transverse sound speed, c T . In this paper we derive an expression for the velocity dependence of B up to c T in terms of the third-order elastic constants of the crystal. We compute the velocity dependence of the phonon wind contribution to B in the range 1%–90% c T for Al, Cu, Fe, and Nb in the isotropic Debye approximation, and to better accuracy than in earlier studies. It is proved that the drag coefficient for screw dislocations scattering transverse phonons is finite as v → c T , whereas B is divergent for edge dislocations scattering transverse phonons in the same limit. We compare our results to experimental results wherever possible and identify ways to validate and further improve the theory with more realistic phonon dispersion relations, MD simulations, and more accurate measurements.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Demonstrate new plasticity models for doped UO 2 that capture dislocation mechanisms

In light water reactors, fuel vendors are investigating the use of dopants to modify the properties of UO 2 pellets, with the goal of improving pellet-cladding mechanical interactions during operation. Dopants are expected to ‘soften’ the pellets; that is, the doped pellets have higher plastic deformation than conventional UO 2 . This leads to a reduction in the severity of mechanical pellet-cladding interactions, helping to reduce the hoop strain on the cladding. By minimizing the strain exerted by the pellet on the cladding, it is anticipated that cladding performance under accident conditions can be enhanced (i.e., lowering the risk of burst during a LOCA). Dopants such as chromium (Cr) promote grain growth during pellet fabrication, leading to larger grains; therefore, understanding the link between chemistry, microstructure and mechanical deformation (enhanced creep rates) behavior of UO 2 is critical to helping operators further substantiate the benefits of doping UO 2 . Historically, the nuclear energy industry has relied on empirical models to make assessments of performance. Compared to empirical models, mechanistic physics-based models provide benefits, such as, fewer data points for validation and better extrapolation where experimental data is scarce or non-existent. In this report, Bayesian inference techniques have been applied to a previously developed lower length-scale-informed diffusional creep model. The objective is to i) infer lower-length-scale parameter distributions from available experiment and then ii) determine the uncertainties in the measurable quantity (in this case creep rates) after propagating the inferred lower length scale parameter uncertainties. The approach requires many evaluations of the model, which becomes computationally insurmountable; therefore, a neural-network model is trained to data obtained by sampling the full model over the most important parameters. This neural-network is then used in the Bayesian inference approach to determine probability distributions in the parameter values that represent the uncertainty in the model given what is known from the experiments (posterior). A significant reduction compared to conservative initial (prior) uncertainties is achieved through inference against the experimental data, demonstrating the efficacy of this approach. Furthermore, by accounting for uncertainties in the experimental conditions and sample non-stoichiometry, it is possible to resolve apparent discrepancies in experimental measurements within a self-consistent grain boundary (Coble) creep model that is sensitive to chemistry. This work has been written up and submitted to Nuclear Technology for a special issue on accelerated fuel qualification (AFQ). This uncertainty quantification (UQ) work not only improves the diffusional model, while accounting for uncertainty, but also establishes a framework which can readily be applied to the mechanistic models of dislocation deformation developed in this study. The most likely values from the Bayesian analysis are incorporated into our UO 2 diffusional creep model and a lower length scale-informed irradiation UO 2 creep mechanistic model to generate a dataset. This dataset has been provided to our INL collaborators for training an artificial neural network surrogate model, which will be implemented in the BISON fuel performance code to assess how the results differ from those currently obtained using a fully empirical model and that of using the nominal (uncalibrated) atomic scale parameters in our mechanistic model. Plastic deformation (creep and glide) in UO 2 is a complex phenomenon, governed by multiple underlying processes such as local defect concentrations, applied stresses, and microstructural characteristics. Consequently, there is a need for a meso-scale model with polycrystalline resolution capable of extrapolating to large grain sizes applicable to doped UO 2 , where data is limited and the model can help bridge the knowledge gap. By integrating atomistic data into the polycrystal LApx code, it becomes possible to predict dislocation climb and glide plasticity that simple analytical models cannot accurately represent. The application of atomic-scale data within LApx demonstrated the importance of climb and glide mechanisms in reproducing high-stress UO 2 behavior. Behaviors such as this are crucial to capture and implement in BISON, as parts of the fuel pellet can reach temperatures where glide can occur before pellet cracking. This model which captures dislocation based mechanisms for UO 2 is then used to stand up the doped model accounting for larger grain sizes. It was found that larger grain sizes can lead to enhanced deformation rates in the glide regime, and therefore can help with the pellet cladding mechanical interaction. Therefore if the fuel pellet reaches conditions (stress/temperature) where glide is active, the enhanced creep rates for larger grains in the glide regime (doped UO 2 ) can help with pellet cladding mechanical interactions. Plastic deformation in UO 2 involves multiple mechanisms, including diffusional creep, dislocation climb, and glide. This milestone contains two parts: (1) UQ of a pre-existing lower length scale informed mechanistic diffusional creep model, and (2) development of a new LApx based model for dislocation-mediated creep mechanisms in UO 2 , with application to large-grain doped UO 2 .

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Effect of dislocations on the open-circuit voltage, short-circuit current and efficiency of heteroepitaxial indium phosphide solar cells

Excellent radiation resistance of indium phosphide solar cells makes them a promising candidate for space power applications, but the present high cost of starting substrates may inhibit their large scale use. Thin film indium phosphide cells grown on Si or GaAs substrates have exhibited low efficiencies, because of the generation and propagation of large number of dislocations. Dislocation densities were calculated and its influence on the open circuit voltage, short circuit current, and efficiency of heteroepitaxial indium phosphide cells was studied using the PC-1D. Dislocations act as predominant recombination centers and are required to be controlled by proper transition layers and improved growth techniques. It is shown that heteroepitaxial grown cells could achieve efficiencies in excess of 18 percent AMO by controlling the number of dislocations. The effect of emitter thickness and surface recombination velocity on the cell performance parameters vs. dislocation density is also studied.

Jain, Raj K.↗

Identification of dislocation etch pits in n-type GaAs by NIR transmission microscopy

An optical method is described for identifying dislocation etch pits in n-type GaAS, using near-IR brightfield transmission microscopy. Dislocations are revealed in a nondestructive manner through contrasts that are likely due to impurity decoration of the dislocation lines. By subjecting the same wafers to a photoetching technique, it was established that each etch pit on the surface is associated with a dislocation and that the termination of each (decorated) dislocation is an etch pit.

Cao, X. Z.↗

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (less than 250 V) 4H-SiC p(+)n Junction diodes: DC Properties - Part 1

Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = 1c with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4)/sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.

Neudeck, Philip G.↗

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (<250 V) 4H-SiC p+n Junction Diodes - Part 1: DC Properties

Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = lc with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4) sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.

Neudeck, Philip G.↗

Impact of Compositional Fluctuation on Dislocations in Metamorphic III-V Solar Cells Revealed by Cathodoluminescense Spectrum Imaging

Compositionally graded buffers (CGBs) are essential components of high-efficiency III-V inverted metamorphic solar cells. High-quality CGBs with low defect densities are a requirement for high device efficiencies. In this work we use cathodoluminescence spectrum imaging to investigate the effect of growth conditions on the material properties of AlyGa1-x-yInxAs CGBs with xIn = > 0.30. We find that significant compositional fluctuation exists in these materials, and that it correlates with the distribution of threading dislocations in the CGBs. Threading dislocations collect in regions with large compositional fluctuation, implying that concurrent strain fluctuations in these regions restrict dislocation motion. Thus, the compositional fluctuation leads to elevated threading dislocation densities that degrade CGB quality. We investigate the effectiveness of specific growth conditions at suppressing compositional fluctuation and limiting threading dislocation density, and find that CGBs grown at high temperatures with high Al-content exhibit the lowest defect densities. We also demonstrate that use of a high V/III ratio also suppresses compositional fluctuation and defect density. These materials insights lead directly to the development of metamorphic Ga1-xInxAs solar cells grown on AlyGa1-x-yInxAs CGBs with improved device efficiency.

14 SOLAR ENERGY↗

Distorted dislocation cores and asymmetric glide resistances in titanium

The determination of Critical Resolved Shear Stress (CRSS) in titanium for basal, prismatic, and pyramidal slip-planes without empirical constants is presented by combining Density Functional Theory (DFT) and anisotropic elasticity. A new mechanism leading to tension-compression (T-C) asymmetry in the CRSS levels has been revealed for the first time. The conditions for this asymmetry are established, involving a complex interplay between the dislocation core-structure and core-advance behavior. The three conditions for T-C asymmetry that need to be simultaneously satisfied can be summarized as: (1) a medium stacking fault width, d, (3 < d/b F < 10, where b F is the magnitude of the Burgers vector of the full dislocation), (2) an asymmetric core-structure of the extended dislocation (ξ 1 ≠ ξ 2 , where ξ 1 and ξ 2 are the core-widths of the first and second partials, respectively), and (3) intermittent motion of the partials (Δd/b F ≠ 0, where Δd is the magnitude of fluctuation in stacking fault width during intermittent motion). Pyramidal-slip in titanium satisfies all three conditions, resulting in significant T-C asymmetry. The CRSS theory considers a Wigner-Seitz (W-S) cell based domain area assigned to each lattice site for the calculations of core-energies accurately capturing the slip-plane lattice. The W-S based approach is essential due to the lower symmetry of the HCP crystal circumventing potential errors associated with the one-dimensional atomic-row approximation. Dislocation core structures are obtained for all the slip-systems in titanium showing significant distortion of the disregistry profile governing the core-advance behavior. The CRSS values predicted from the theory show agreement with the experimental CRSS levels reported in the literature.

Dislocation core↗

A FFT-based numerical implementation of mesoscale field dislocation mechanics: Application to two-phase laminates

In this study, we present an enhanced crystal plasticity elasto-viscoplastic fast Fourier transform (EVPFFT) formulation coupled with a phenomenological Mesoscale Field Dislocation Mechanics (MFDM) theory here named MFDM-EVPFFT formulation. In contrast with classic CP-EVPFFT, the model is able to tackle plastic flow and hardening due to polar dislocation density distributions or geometrically necessary dislocations (GNDs) in addition to statistically stored dislocations (SSDs). The model also considers GND mobility through a GND density evolution law numerically solved with a recently developed filtered spectral approach, which is here coupled with stress equilibrium. The discrete Fourier transform method combined with finite differences is applied to solve both lattice incompatibility and Lippmann-Schwinger equations in an augmented Lagrangian numerical scheme. Numerical results are presented for two-phase laminate composites with plastic channels and elastic second phase. It is shown that both GND densities and slip constraint at phase boundaries influence the overall and local hardening behavior. In contrast with the CP-EVPFFT formulation, a channel size effect is predicted on the shear flow stress with the present MFDM-EVPFFT formulation. The size effect originates from the progressive formation of continuous screw GND pile-ups from phase boundaries to the channel center. The effect of GND mean free path on local and global responses is also examined for the two-phase composite.

36 MATERIALS SCIENCE↗

Influence of Dislocation Pinning on the Creep Rate in Aluminum

The influence of the dislocation mobility on the creep rate in aluminum has been estimated. In a steady state of creep, the dislocation mobility is varied by pinning dislocations using impurity atoms during heating. It has been shown that the change in the creep rate is proportional to the fraction of impurity atoms that migrate from the solid solution of deformed aluminum toward the dislocations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Computationally efficient method for determining limiting velocities of edge dislocations in anisotropic crystals

The continuum-limit theory of dislocations in crystals predicts divergences in the elastic energy at crystal-geometry dependent limiting velocities vL, which separate subsonic, transsonic, and supersonic dislocation glide regimes and are therefore import for material strength models at high strain rates. Although it is known how to calculate those limiting velocities, there is one special case - edge dislocations with reflection symmetry, but non-vanishing elastic constants c16 or c26 - where previous methods have been notoriously slow. In this letter, we address this deficiency by deriving a computationally efficient method for determining the limiting velocities of edge dislocations with reflection symmetry which is two orders of magnitude faster than the previous method.

36 MATERIALS SCIENCE↗

Charging Reactions Promoted by Geometrically Necessary Dislocations in Battery Materials Revealed by In Situ Single-Particle Synchrotron Measurements

Crystallographic defects exist in many redox active energy materials, e.g., battery and catalyst materials, which significantly alter their chemical properties for energy storage and conversion. However, there is lack of quantitative understanding of the interrelationship between crystallographic defects and redox reactions. Herein, crystallographic defects, such as geometrically necessary dislocations, are reported to influence the redox reactions in battery particles through single-particle, multimodal, and in situ synchrotron measurements. Through Laue X-ray microdiffraction, many crystallographic defects are spatially identified and statistically quantified from a large quantity of diffraction patterns in many layered oxide particles, including geometrically necessary dislocations, tilt boundaries, and mixed defects. The in situ and ex situ measurements, combining microdiffraction and X-ray spectroscopy imaging, reveal that LiCoO 2 particles with a higher concentration of geometrically necessary dislocations provide deeper charging reactions, indicating that dislocations may facilitate redox reactions in layered oxides during initial charging. The present study illustrates that a precise control of crystallographic defects and their distribution can potentially promote and homogenize redox reactions in battery materials.

25 ENERGY STORAGE↗

Analytical methods for superresolution dislocation identification in dark-field X-ray microscopy

In this work, we develop several inference methods to estimate the position of dislocations from images generated using dark-field X-ray microscopy (DFXM)—achieving superresolution accuracy and principled uncertainty quantification. Using the framework of Bayesian inference, we incorporate models of the DFXM contrast mechanism and detector measurement noise, along with initial position estimates, into a statistical model coupling DFXM images with the dislocation position of interest. We motivate several position estimation and uncertainty quantification algorithms based on this model. We then demonstrate the accuracy of our primary estimation algorithm on synthetic realistic DFXM images of edge dislocations in single-crystal aluminum. We conclude with a discussion of our methods’ impact on future dislocation studies and possible future research avenues.

36 MATERIALS SCIENCE↗

Influence of High Pulsed Magnetic Field on the Dislocations and Mechanical Properties of Al{sub 2}O{sub 3}/Al Composites

At T6 state, Al–Zn–Mg–Cu aluminum matrix composites reinforced with Al{sub 2}O{sub 3} particles generated in situ were subjected to high pulsed magnetic fields at different magnetic induction intensities (B = 2, 3 and 4 T). The results show that the dislocation densities in the treated samples increased with increasing B, and the magnetoplastic effect was determined to be the primary cause. The effect of the magnetic field is believed to alter the spin state of free electrons between dislocations and obstacles from the singlet state (associated with high bonding energy) to the triplet state (low bonding energy). The maximum ultimate tensile strength of 532 MPa was obtained at B = 4 T with 30 pulses, which was 20.7% higher than that of the initial sample, primarily because of dislocation strengthening. At B = 2 T, the elongation was at its maximum of 9.3%, representing an increase of 12% compared with the initial sample, while the associated ultimate tensile strength (447 MPa) was still higher than that of the untreated sample (440 MPa). The relationship between mechanical properties and microstructure was analyzed, and the improved properties observed in this work are explained by the transition of the electron spin state and the piling up of dislocations.

36 MATERIALS SCIENCE↗

High Resolution Electron Microscopy Of Dislocation Ribbons In A CMSX-4 Superalloy single crystal

High-resolution scanning transmission electron microscopy (HR STEM) has been used to study the structure of dislocations in single crystal superalloy samples that have been subjected to conditions that favour the primary creep regime. The study has revealed the detailed structure of extended a 2 h112i dislocations as they shear the 0 precipitates during creep. These dislocations dissociate in a manner that is consistent with the PFMD predictions made and also suggests the importance of the reordering process during their movement. The shearing done by the ah112i dislocationswas also found to distort the/ 0 interface, changing its appearance from linear to a 'saw tooth' pattern. Another important observation was the segregation of alloying element with high atomic mass to the stacking faults to reduce their energies during shear. Numerous a 2 h110i dissociated dislocations were also observed in the channels of the superalloy. The high resolution provided by the STEM imaging enables one to study the high energy faults that are usually di*cult to observe in conventional weak-beam TEM, such as CISF and CESF-1 in the 0 andthe ISF in the, and to make estimates of their energies. Key

36 MATERIALS SCIENCE↗

Two modes of screw dislocation glide in fcc single-phase concentrated alloys

Concentrated solid solution alloys (CSSAs), including medium- and high-entropy alloys, are currently being considered as prospective materials in many applications. The behavior of CSSAs under different conditions, including mechanical loading, differs from that of conventional alloys and has been the subject of intensive study by different techniques. In many cases, their behavior is treated by modifying solid solution hardening models, which, in principle, does not reflect many important features of CSSAs where the distinction between solute and solvent atoms is not clear. In this work, we report the results of an atomic-scale study of ½<110>{111} screw dislocation motion in an fcc equiatomic Ni-Fe alloy. Molecular dynamics simulations demonstrate that the dislocation has two distinctive modes for glide. At lower stress, dislocations move in a very rough manner that cannot be described as continuous glide but rather as jerky motion through a set of obstacles. At high stress, they glide in a manner similar to lattice friction-controlled conditions in single component systems. The stress for the transition between modes depends on the dislocation segment length and temperature. As a result, at 300 K, the flow stress saturates at ~130 MPa for lengths above ~140 |b| (b is the Burgers vector).

36 MATERIALS SCIENCE↗