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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 433 records · Page 24
All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

Mechanical energy storage device for hip disarticulation

An artificial leg including a trunk socket, a thigh section hingedly coupled to the trunk socket, a leg section hingedly coupled to the thigh section and a foot section hingedly coupled to the leg section is outlined. A mechanical energy storage device is operatively associated with the artificial leg for storage and release of energy during the normal walking stride of the user. Energy is stored in the mechanical energy storage device during a weight-bearing phase of the walking stride when the user's weight is on the artificial leg. Energy is released during a phase of the normal walking stride, when the user's weight is removed from the artificial leg. The stored energy is released from the energy storage device to pivot the thigh section forwardly about the hinged coupling to the trunk socket.

Vallotton, W. C.↗
NASA NTRS1977

A design handbook for phase change thermal control and energy storage devices

Comprehensive survey is given of the thermal aspects of phase change material devices. Fundamental mechanisms of heat transfer within the phase change device are discussed. Performance in zero-g and one-g fields are examined as it relates to such a device. Computer models for phase change materials, with metal fillers, undergoing conductive and convective processes are detailed. Using these models, extensive parametric data are presented for a hypothetical configuration with a rectangular phase change housing, using straight fins as the filler, and paraffin as the phase change material. These data are generated over a range of realistic sizes, material properties, and thermal boundary conditions. A number of illustrative examples are given to demonstrate use of the parametric data. Also, a complete listing of phase change material property data are reproduced herein as an aid to the reader.

Humphries, W. R.↗
NASA NTRS1978

The study of surface acoustic wave charge transfer device

A surface acoustic wave-charge transfer device, consisting of an n-type silicon substrate, a thermally grown silicon dioxide layer, and a sputtered film of piezoelectric zinc oxide is proposed as a means of circumventing problems associated with charge-coupled device (CCD) applications in memory, signal processing, and imaging. The proposed device creates traveling longitudinal electric fields in the silicon and replaces the multiphase clocks in CCD's. The traveling electric fields create potential wells which carry along charges stored there. These charges may be injected into the wells by light or by using a p-n junction as in conventional CCD's.

Papanicolaou, N.↗
NASA NTRS1977

Cartridge firing device designed for attachment, release and ejection of a satellite

The device functions were performed by a one-piece unit with resulting performances which were of interest regarding the satellite attachment and the accuracies of the path and velocity during separation and ejection. A gain in weight may be obtained relative to the conventional device used, i.e. maintenance belt, belt unlocking device, pusher spring, and cartridge fired pusher.

Pierron, L.↗
NASA NTRS1978

Pattern classification using Charge Transfer Devices

The potential uses of Charge Transfer Devices (CTDs) in pattern classification operations are explored. The needs for a hardware-based pattern classifier are established, and a matrix multiplication subsystem based upon a sum of products CTD is presented. An evaluation process for sum of products devices (particularly analog-analog correlators) is developed, and the feasibility of employing a particular device in a pattern classifier is determined. Finally, the possible impact of future trends in technology is considered.

Snyder, W. E.↗
NASA NTRS1978

Development of an optical parallel logic device and a half-adder circuit for digital optical processing

The paper describes the fabrication and operation of an optical parallel logic (OPAL) device which performs Boolean algebraic operations on binary images. Several logic operations on two input binary images were demonstrated using an 8 x 8 device with a CdS photoconductor and a twisted nematic liquid crystal. Two such OPAL devices can be interconnected to form a half-adder circuit which is one of the essential components of a CPU in a digital signal processor.

Athale, R. A.↗
NASA NTRS1979

Performance of a capillary propellant management device with hydrazine

The propellant management device that was successfully used in the Viking Orbiter spacecraft was selected for the main propulsion system of the Teleoperator Retrieval System (TRS). Due to differences in the missions and different propellants, the operation of this sheet metal vane device required reverification for the TRS application. An analytical investigation was performed considering the adverse acceleration environment and the high contract angle of the hydrazine propellant. Drop tower tests demonstrated that the device would provide propellant acquisition while the TRS was docked with Skylab, but its operation would have to be supplemented through propellant settling when free-flying.

Tegart, J. R.↗
NASA NTRS1979

Portable device for detection of petit mal epilepsy

A portable device that analyzes the electroencephalogram to determine if petit mal epilepsy waveforms are present is developed and tested. Clinicians should find it useful in diagnosing seizure activity of their patients. The micropower, battery-operated, portable device indicates a seizure has occurred if three criteria are satisfied: (1) frequencies of 2.5-7 Hz, (2) large-amplitude waves, and (3) minimum number of waves per second. Levels and counts are adjustable, thus insuring high reliability against noise artifacts and permitting each subject to be individually fitted. The device has shown promise in giving the patient a possible mechanism of seizure control or suppression.

Smith, R. G.↗
NASA NTRS1980

Pattern classification using charge transfer devices

The feasibility of using charge transfer devices in the classification of multispectral imagery was investigated by evaluating particular devices to determine their suitability in matrix multiplication subsystem of a pattern classifier and by designing a protype of such a system. Particular attention was given to analog-analog correlator devices which consist of two tapped delay lines, chip multipliers, and a summed output. The design for the classifier and a printed circuit layout for the analog boards were completed and the boards were fabricated. A test j:g for the board was built and checkout was begun.

Source record↗
NASA NTRS1979

Charge injection device as a candidate sensor for stellar tracking

Charge transfer devices (CTDs) are superior to the image dissector as stellar tracking sensors, considering their low voltage requirements, insensitivity to magnetic fields, good linearity, and low weight and power. An analysis of one type of CTD, called the charge injection device (CID), revealed an X-Y addressing capability which provides exceptional flexibility in array readout and results in enhanced S/N capability, a surface channel device which produces a larger dynamic range of operation, and exceptional and unique tolerance to optical overloads. A 128 row by 128 column CID array processed on silicon was evaluated in a cooled breadboard camera, and measured results indicate projected performance parameters of a large area CID array as follows: 20 micron square sensing site, noise not greater than 25 carriers per pixel, quantum yield of approximately 40% from 0.4 to 1.0 micron, and cooling requirements on the order of 0 degrees C.

Jones, C. S., Jr.↗
NASA NTRS1979

Monolithic InSb imaging arrays with charge-coupled device /CCD/ readout

The paper demonstrates the detection of infrared radiation and signal readout on a monolithic InSb charge coupled infrared imaging device. The device is a 20-element linear imager with MOS detectors coupled to a four-phase, surface-channel, charge transfer structure. The charge transfer device is p-channel and has planar ion implanted diode structures for zero input and charge readout. Sensitivity measurements on the MOS infrared detectors were determined for the 20-element array. Data are presented on the operational characteristics of the 20-element linear imager under various conditions of electrical and optical inputs in both multiplexed and a time delay and integration (TDI) mode. Plans are discussed for a monolithic InSb 100-element linear imager and a 20 x 16 TDI linear imager.

Miller, W. E.↗
NASA NTRS1980

A new planar injection-gated bulk switching device based upon deep impurity trapping

Under the proper conditions, double-injection (DI) diodes with partially compensated deep impurities will exhibit 'S'-type switching characteristics similar to conventional silicon-controlled rectifiers (SCR's). A practical injection-gating scheme has been achieved for the first time in a planar configuration to control the switching behavior of these devices, marked by extreme sensitivity of the gate over a range of switching voltages. An experiment to demonstrate the feasibility of these devices for practical application is described. Finally, a phenomenological explanation is presented for the gate-controlled switching of these devices.

Kapoor, A. K.↗
NASA NTRS1981

Description of a digital computer simulation of an Annular Momentum Control Device (AMCD) laboratory test model

A description of a digital computer simulation of an Annular Momentum Control Device (AMCD) laboratory model is presented. The AMCD is a momentum exchange device which is under development as an advanced control effector for spacecraft attitude control systems. The digital computer simulation of this device incorporates the following models: six degree of freedom rigid body dynamics; rim warp; controller dynamics; nonlinear distributed element axial bearings; as well as power driver and power supply current limits. An annotated FORTRAN IV source code listing of the computer program is included.

Woolley, C. T.↗
NASA NTRS1981

Test of charge injection device, phase 1

A computer-controlled automatic facility containing two interactive microprocessors, peripherals, and an optical bench was used to obtain device characteristics for use in evaluating CID's as the sensor element in a prospective star tracker application. Each of the ST-256 chips tested contains a 256 x 256 pixel element array with 65536 picture elements. Two ST-256 devices were tested at 20 C under light levels of 10%, 0.1%, and 0.01% saturation, and in darkness. The saturation level was established at 0.95 microwatts sq cm as measured by the radiometeric sensor. Two test runs under each condition were performed for each chip. Two complete sets of data for each of the devices were thus obtained. A separate data field was used to store the results of each test condition. Repetitive runs of a test condition were stored sequentially in the same file. Examination of the data using print-outs is shown in examples.

Gradinger, A.↗
NASA NTRS1981

Silicon superlattices: Theory and application to semiconductor devices

Silicon superlattices and their applicability to improved semiconductor devices were studied. The device application potential of the atomic like dimension of III-V semiconductor superlattices fabricated in the form of ultrathin periodically layered heterostructures was examined. Whether this leads to quantum size effects and creates the possibility to alter familiar transport and optical properties over broad physical ranges was studied. Applications to improved semiconductor lasers and electrondevices were achieved. Possible application of silicon sperlattices to faster high speed computing devices was examined. It was found that the silicon lattices show features of smaller fundamental energyband gaps and reduced effective masses. The effects correlate strongly with both the chemical and geometrical nature of the superlattice.

Moriarty, J. A.↗
NASA NTRS1981

Total-dose radiation effects data for semiconductor devices, volume 1

Steady-state, total-dose radiation test data are provided in graphic format, for use by electronic designers and other personnel using semiconductor devices in a radiation environment. Data are presented by JPL for various NASA space programs on diodes, bipolar transistors, field effect transistors, silicon-controlled rectifiers, and optical devices. A vendor identification code list is included along with semiconductor device electrical parameter symbols and abbreviations.

Price, W. E.↗
NASA NTRS1981

Design and development of integral heat pipe/thermal energy storage devices

The major design and performance test subtasks in the development of small (200 to 1,000 whr) integral heat pipe/thermal energy storage devices for use with thermally driven spacecraft cryo-coolers are described. The design of the integral heat pipe/thermal energy storage device was based on a quasi steady resistance heat transfer, lumped capacitance model. Design considerations for the heat pipe and thermal storage annuli are presented. The thermomechanical stress and insulation system design for the device are reviewed. Experimental correlations are described, as are the plans for the further development of the concept.

Mahefkey, E. T.↗
NASA NTRS1982

Experimental study of delta wing leading-edge devices for drag reduction at high lift

The drag reduction devices selected for evaluation were the fence, slot, pylon-type vortex generator, and sharp leading-edge extension. These devices were tested on a 60 degree flatplate delta (with blunt leading edges) in the Langley Research Center 7- by 10-foot high-speed tunnel at low speed and to angles of attack of 28 degrees. Balance and static pressure measurements were taken. The results indicate that all the devices had significant drag reduction capability and improved longitudinal stability while a slight loss of lift and increased cruise drag occurred.

Johnson, T. D., Jr.↗