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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 433 records · Page 24
All sourcesNASA NTRSDOE OSTI
NASA NTRS2006

Non-Uniform Thickness Electroactive Device

An electroactive device comprises at least two layers of material, wherein at least one layer is an electroactive material and wherein at least one layer is of non-uniform thickness. The device can be produced in various sizes, ranging from large structural actuators to microscale or nanoscale devices. The applied voltage to the device in combination with the non-uniform thickness of at least one of the layers (electroactive and/or non-electroactive) controls the contour of the actuated device. The effective electric field is a mathematical function of the local layer thickness. Therefore, the local strain and the local bending/ torsion curvature are also a mathematical function of the local thickness. Hence the thinnest portion of the actuator offers the largest bending and/or torsion response. Tailoring of the layer thicknesses can enable complex motions to be achieved.

Su, Ji↗
NASA NTRS2003

Development of reliable electronic packaging solutions for spacecraft avionics miniaturization using embedded passice devices

Miniaturization of electronic packages will play a key rule in future space avionics systems. Smaller avionics packages will reduce payloads while providing greater functionality for information processing and mission instrumentation. Current surface mount technology discrete passive devices not only take up significant space but also add weight. To that end, the use of embedded passive devices, such as capacitors, inductors and resistors will be instrumental in allowing electronics to be made smaller and lighter. Embedded passive devices fabricated on silicon or like substrates using thin film technology, promise great savings in circuit volume, as well as potentially improving electrical performance by decreasing parasitic losses. These devices exhibit a low physical profile and allow the circuit footprint to be reduced by stacking passive elements within a substrate. Thin film technologies used to deposit embedded passive devices are improving and costs associated with the process are decreasing.

Schatzel, Don↗
NASA NTRS2007

Screening of Potential Landing Gear Noise Control Devices at Virginia Tech For QTD II Flight Test

In support of the QTD II (Quiet Technology Demonstrator) program, aeroacoustic measurements of a 26%-scale, Boeing 777 main landing gear model were conducted in the Virginia Tech Stability Tunnel. The objective of these measurements was to perform risk mitigation studies on noise control devices for a flight test performed at Glasgow, Montana in 2005. The noise control devices were designed to target the primary main gear noise sources as observed in several previous tests. To accomplish this task, devices to reduce noise were built using stereo lithography for landing gear components such as the brakes, the forward cable harness, the shock strut, the door/strut gap and the lower truck. The most promising device was down selected from test results. In subsequent stages, the initial design of the selected lower truck fairing was improved to account for all the implementation constraints encountered in the full-scale airplane. The redesigned truck fairing was then retested to assess the impact of the modifications on the noise reduction potential. From extensive acoustic measurements obtained using a 63-element microphone phased array, acoustic source maps and integrated spectra were generated in order to estimate the noise reduction achievable with each device.

Ravetta, Patricio A.↗
NASA NTRS2007

Performance Measurement of a Multi-Level/Analog Ferroelectric Memory Device Design

Increasing the memory density and utilizing the unique characteristics of ferroelectric devices is important in making ferroelectric memory devices more desirable to the consumer. This paper describes the characterization of a design that allows multiple levels to be stored in a ferroelectric based memory cell. It can be used to store multiple bits or analog values in a high speed nonvolatile memory. The design utilizes the hysteresis characteristic of ferroelectric transistors to store an analog value in the memory cell. The design also compensates for the decay of the polarization of the ferroelectric material over time. This is done by utilizing a pair of ferroelectric transistors to store the data. One transistor is used a reference to determinethe amount of decay that has occurred since the pair was programmed. The second transistor stores the analog value as a polarization value between zero and saturated. The design allows digital data to be stored as multiple bits in each memory cell. The number of bits per cell that can be stored will vary with the decay rate of the ferroelectric transistors and the repeatability of polarization between transistors. This paper presents measurements of an actual prototype memory cell. This prototype is not a complete implementation of a device, but instead, a prototype of the storage and retrieval portion of an actual device. The performance of this prototype is presented with the projected performance of the overall device. This memory design will be useful because it allows higher memory density, compensates for the environmental and ferroelectric aging processes, allows analog values to be directly stored in memory, compensates for the thermal and radiation environments associated with space operations, and relies only on existing technologies.

MacLeod, Todd C.↗
NASA NTRS2004

Single Event Effects in Highly Scaled Devices for Space Applications

This paper discusses single-event upset (SEU) in memories and microprocessors that are the "drivers" of highly scaled commercial integrated circuits. Despite the decrease in critical charge that occurs for highly scaled CMOS devices, recent test data has shown that SEU rates are actually somewhat lower for scaled devices compared to older devices with larger feature size. Hard errors, which are increasingly important for memories, are discussed along with conventional soft errors. Functional errors in memories and microprocessors are particularly significant, and tend to dominate the response of highly scaled devices from an application standpoint. Predictions for future devices are made using the Semiconductor Industry Roadmap along with recent modeling and radiation test results.

microelectronics↗
NASA NTRS1998

Six axis force feedback input device

The present invention is a low friction, low inertia, six-axis force feedback input device comprising an arm with double-jointed, tendon-driven revolute joints, a decoupled tendon-driven wrist, and a base with encoders and motors. The input device functions as a master robot manipulator of a microsurgical teleoperated robot system including a slave robot manipulator coupled to an amplifier chassis, which is coupled to a control chassis, which is coupled to a workstation with a graphical user interface. The amplifier chassis is coupled to the motors of the master robot manipulator and the control chassis is coupled to the encoders of the master robot manipulator. A force feedback can be applied to the input device and can be generated from the slave robot to enable a user to operate the slave robot via the input device without physically viewing the slave robot. Also, the force feedback can be generated from the workstation to represent fictitious forces to constrain the input device's control of the slave robot to be within imaginary predetermined boundaries.

Ohm, Timothy↗
NASA NTRS2005

Network device interface for digitally interfacing data channels to a controller via a network

The present invention provides a network device interface and method for digitally connecting a plurality of data channels, such as sensors, actuators, and subsystems, to a controller using a network bus. The network device interface interprets commands and data received from the controller and polls the data channels in accordance with these commands. Specifically, the network device interface receives digital commands and data from the controller, and based on these commands and data, communicates with the data channels to either retrieve data in the case of a sensor or send data to activate an actuator. Data retrieved from the sensor is then converted by the network device interface into digital signals and transmitted back to the controller. In one advantageous embodiment, the network device interface uses a specialized protocol for communicating across the network bus that uses a low-level instruction set and has low overhead for data communication.

Ellerbrock, Philip J.↗
NASA NTRS2005

Scaling device for photographic images

A scaling device projects a known optical pattern into the field of view of a camera, which can be employed as a reference scale in a resulting photograph of a remote object, for example. The device comprises an optical beam projector that projects two or more spaced, parallel optical beams onto a surface of a remotely located object to be photographed. The resulting beam spots or lines on the object are spaced from one another by a known, predetermined distance. As a result, the size of other objects or features in the photograph can be determined through comparison of their size to the known distance between the beam spots. Preferably, the device is a small, battery-powered device that can be attached to a camera and employs one or more laser light sources and associated optics to generate the parallel light beams. In a first embodiment of the invention, a single laser light source is employed, but multiple parallel beams are generated thereby through use of beam splitting optics. In another embodiment, multiple individual laser light sources are employed that are mounted in the device parallel to one another to generate the multiple parallel beams.

Rivera, Jorge E.↗
NASA NTRS2004

Network device interface for digitally interfacing data channels to a controller via a network

The present invention provides a network device interface and method for digitally connecting a plurality of data channels, such as sensors, actuators, and subsystems, to a controller using a network bus. The network device interface interprets commands and data received from the controller and polls the data channels in accordance with these commands. Specifically, the network device interface receives digital commands and data from the controller, and based on these commands and data, communicates with the data channels to either retrieve data in the case of a sensor or send data to activate an actuator. Data retrieved from the sensor is then converted by the network device interface into digital signals and transmitted back to the controller. In one advantageous embodiment, the network device interface uses a specialized protocol for communicating across the network bus that uses a low-level instruction set and has low overhead for data communication.

Ellerbrock, Philip J.↗
NASA NTRS1986

Device and method for determining freezing points

A freezing point method and device (10) are disclosed. The method and device pertain to an inflection point technique for determining the freezing points of mixtures. In both the method and device (10), the mixture is cooled to a point below its anticipated freezing point and then warmed at a substantially linear rate. During the warming process, the rate of increase of temperature of the mixture is monitored by, for example, thermocouple (28) with the thermocouple output signal being amplified and differentiated by a differentiator (42). The rate of increase of temperature data are analyzed and a peak rate of increase of temperature is identified. In the preferred device (10) a computer (22) is utilized to analyze the rate of increase of temperature data following the warming process. Once the maximum rate of increase of temperature is identified, the corresponding temperature of the mixture is located and earmarked as being substantially equal to the freezing point of the mixture. In a preferred device (10), the computer (22), in addition to collecting the temperature and rate of change of temperature data, controls a programmable power supply (14) to provide a predetermined amount of cooling and warming current to thermoelectric modules (56).

Mathiprakasam, Balakrishnan↗
NASA NTRS2006

Network device interface for digitally interfacing data channels to a controller a via network

The present invention provides a network device interface and method for digitally connecting a plurality of data channels to a controller using a network bus. The network device interface interprets commands and data received from the controller and polls the data channels in accordance with these commands. Specifically, the network device interface receives digital commands and data from the controller, and based on these commands and data, communicates with the data channels to either retrieve data in the case of a sensor or send data to activate an actuator. In one embodiment, the bus controller transmits messages to the network device interface containing a plurality of bits having a value defined by a transition between first and second states in the bits. The network device interface determines timing of the data sequence of the message and uses the determined timing to communicate with the bus controller.

Ellerbrock, Philip J.↗
NASA NTRS2006

Graded junction termination extensions for electronic devices

A graded junction termination extension in a silicon carbide (SiC) semiconductor device and method of its fabrication using ion implementation techniques is provided for high power devices. The properties of silicon carbide (SiC) make this wide band gap semiconductor a promising material for high power devices. This potential is demonstrated in various devices such as p-n diodes, Schottky diodes, bipolar junction transistors, thyristors, etc. These devices require adequate and affordable termination techniques to reduce leakage current and increase breakdown voltage in order to maximize power handling capabilities. The graded junction termination extension disclosed is effective, self-aligned, and simplifies the implementation process.

Merrett, J. Neil↗
NASA NTRS2006

Network device interface for digitally interfacing data channels to a controller via a network

The present invention provides a network device interface and method for digitally connecting a plurality of data channels, such as sensors, actuators, and subsystems, to a controller using a network bus. The network device interface interprets commands and data received from the controller and polls the data channels in accordance with these commands. Specifically, the network device interface receives digital commands and data from the controller, and based on these commands and data, communicates with the data channels to either retrieve data in the case of a sensor or send data to activate an actuator. Data retrieved from the sensor is then converted by the network device interface into digital signals and transmitted back to the controller. In one advantageous embodiment, the network device interface is a state machine, such as an ASIC, that operates independent of a processor in communicating with the bus controller and data channels.

Ellerbrock, Philip J.↗
NASA NTRS2007

Charge dissipative dielectric for cryogenic devices

A Superconducting Quantum Interference Device (SQUID) is disclosed comprising a pair of resistively shunted Josephson junctions connected in parallel within a superconducting loop and biased by an external direct current (dc) source. The SQUID comprises a semiconductor substrate and at least one superconducting layer. The metal layer(s) are separated by or covered with a semiconductor material layer having the properties of a conductor at room temperature and the properties of an insulator at operating temperatures (generally less than 100 Kelvins). The properties of the semiconductor material layer greatly reduces the risk of electrostatic discharge that can damage the device during normal handling of the device at room temperature, while still providing the insulating properties desired to allow normal functioning of the device at its operating temperature. A method of manufacturing the SQUID device is also disclosed.

Cantor, Robin Harold↗
NASA NTRS2007

Graded junction termination extensions for electronic devices

A graded junction termination extension in a silicon carbide (SiC) semiconductor device and method of its fabrication using ion implementation techniques is provided for high power devices. The properties of silicon carbide (SiC) make this wide band gap semiconductor a promising material for high power devices. This potential is demonstrated in various devices such as p-n diodes, Schottky diodes, bipolar junction transistors, thyristors, etc. These devices require adequate and affordable termination techniques to reduce leakage current and increase breakdown voltage in order to maximize power handling capabilities. The graded junction termination extension disclosed is effective, self-aligned, and simplifies the implementation process.

Merrett, J. Neil↗
NASA NTRS2008

Reliability of Strength Testing using the Advanced Resistive Exercise Device and Free Weights

The Advanced Resistive Exercise Device (ARED) was developed for use on the International Space Station as a countermeasure against muscle atrophy and decreased strength. This investigation examined the reliability of one-repetition maximum (1RM) strength testing using ARED and traditional free weight (FW) exercise. Methods: Six males (180.8 +/- 4.3 cm, 83.6 +/- 6.4 kg, 36 +/- 8 y, mean +/- SD) who had not engaged in resistive exercise for at least six months volunteered to participate in this project. Subjects completed four 1RM testing sessions each for FW and ARED (eight total sessions) using a balanced, randomized, crossover design. All testing using one device was completed before progressing to the other. During each session, 1RM was measured for the squat, heel raise, and deadlift exercises. Generalizability (G) and intraclass correlation coefficients (ICC) were calculated for each exercise on each device and were used to predict the number of sessions needed to obtain a reliable 1RM measurement (G . 0.90). Interclass reliability coefficients and Pearson's correlation coefficients (R) also were calculated for the highest 1RM value (1RM9sub peak)) obtained for each exercise on each device to quantify 1RM relationships between devices.

English, Kirk L.↗
NASA NTRS2009

Autoignition Chamber for Remote Testing of Pyrotechnic Devices

The autoignition chamber (AIC) performs by remotely heating pyrotechnic devices that can fit the inner diameter of the tube furnace. Two methods, a cold start or a hot start, can be used with this device in autoignition testing of pyrotechnics. A cold start means extending a pyrotechnic device into the cold autoignition chamber and then heating the device until autoignition occurs. A hot start means heating the autoignition chamber to a specified temperature, and then extending the device into a hot autoignition chamber until autoignition occurs. Personnel are remote from the chamber during the extension into the hot chamber. The autoignition chamber, a commercially produced tubular furnace, has a 230-V, single-phase, 60-Hz electrical supply, with a total power output of 2,400 W. It has a 6-in. (15.2-cm) inner diameter, a 12-in. (30.4-cm) outer diameter and a 12-in.- long (30.4-cm), single-zone, solid tubular furnace (element) capable of heating to temperatures up to 2,012 F (1,100 C) in air.

Harrington, Maureen L.↗
NASA NTRS2007

Coating Thermoelectric Devices To Suppress Sublimation

A technique for suppressing sublimation of key elements from skutterudite compounds in advanced thermoelectric devices has been demonstrated. The essence of the technique is to cover what would otherwise be the exposed skutterudite surface of such a device with a thin, continuous film of a chemically and physically compatible metal. Although similar to other sublimation-suppression techniques, this technique has been specifically tailored for application to skutterudite antimonides. The primary cause of deterioration of most thermoelectric materials is thermal decomposition or sublimation - one or more elements sublime from the hot side of a thermoelectric couple, changing the stoichiometry of the device. Examples of elements that sublime from their respective thermoelectric materials are Ge from SiGe, Te from Pb/Te, and now Sb from skutterudite antimonides. The skutterudite antimonides of primary interest are CoSb3 [electron-donor (n) type] and CeFe(3-x)Co(x)Sb12 [electron-acceptor (p) type]. When these compounds are subjected to typical operating conditions [temperature of 700 C and pressure <10(exp -5) torr (0.0013 Pa)], Sb sublimes from their surfaces, with the result that Sb depletion layers form and advance toward their interiors. As the depletion layer advances in a given device, the change in stoichiometry diminishes the thermal-to-electric conversion efficiency of the device. The problem, then, is to prevent sublimation, or at least reduce it to an acceptably low level. In preparation for an experiment on suppression of sublimation, a specimen of CoSb3 was tightly wrapped in a foil of niobium, which was selected for its chemical stability. In the experiment, the wrapped specimen was heated to a temperature of 700 C in a vacuum of residual pressure <10(exp -5) torr (0.0013 Pa), then cooled and sectioned. Examination of the sectioned specimen revealed that no depletion layer had formed, indicating the niobium foil prevented sublimation of antimony at 700 C. This was a considerable improvement, considering that uncoated CoSb3 had been found to decompose to form the lowest antimonide at the surface at only 600 C. Evidently, because the mean free path of Sb at the given temperature and pressure was of the order of tens of centimeters, any barrier closer than tens of centimeters (as was the niobium foil) would have suppressed transport of Sb vapor, thereby suppressing sublimation of Sb

Sakamoto, Jeffrey↗