Characterization of Dislocations in 4H-SiC Single Crystals at the Initial Growth Stage by Synchrotron X-ray Topography
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Ailihumaer, Tuerxun↗
SEARCH · Engineering Papers
Results for “Crystal Growth”
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GROWTH OF CD0.9ZN0.1TE1-YSEY SINGLE CRYSTALS FOR ROOM TEMPERATURE GAMMA RAY DETECTION
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JAMES, RALPH B↗
Extraction of Coulomb crystals with limited emittance growth
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43 PARTICLE ACCELERATORS↗
Revealing and Engineering Assembly Pathways of 3D DNA Origami Crystals
Recent developments in nanomaterial self-assembly demonstrate the capability to create tailored nanostructures by engineering both the binding coordination and specificity of interactions between material subunits. DNA origami frames allow for the design and fabrication of a broad variety of ordered 3D nanoscale architectures through self-assembly, facilitated by frame-to-frame bonds with designable strength and specificity. While the bond design is critical to lattice formation, the assembly process itself is often dependent on a thermal pathway. Highly ordered nanoscale frameworks, assembled from DNA frames, are predominantly crystallized through thermal annealing pathways that typically follow a “slow” cooling approach, with experiments on the time scale of days yielding DNA origami crystals in the range of 1−10 μm. This extended assembly time scale hinders the study of crystal formation pathways, necessitating a deeper understanding of factors governing successful annealing. Lack of insight into time scale also presents a practical limitation for material fabrication. Here, we investigate key factors affecting lattice assembly pathways and demonstrate that precise engineering of assembly conditions greatly reduces assembly times by up to nearly 2 orders of magnitude. We evaluate the nucleation and growth of crystals via optical and electron microscopy, and small-angle X-ray scattering techniques, mapping the time−temperature-transformation of superlattices from the melt through single-crystal optical tracking. The results show that origami frame assembly can be described by classical nucleation and growth theory, which can, in turn, be used to prescribe the growth of the crystals. Lastly, these findings are applied to demonstrate thermal pathway-dependent assembly, forming distinct assemblies based on different thermal annealing profiles.
36 MATERIALS SCIENCE↗
In Situ 4D‐STEM Imaging of the Orientation of Lamellar Clusters in Polymer Crystallization
In semi‐crystalline polymeric materials, the initial stages of nucleation and the growth path of crystalline domains can determine the final performance. Here, in this work, we used four‐dimensional scanning transmission electron microscopy (4D‐STEM) imaging to analyze the changes in lamellar orientation in high‐density polyethylene (HDPE) during heating and cooling. This method allowed us to quantitatively detect the formation of lamellae clusters with different in‐plane orientations, which are not visible with traditional methods. Our analysis provided detailed insights into the orientation and size changes of crystalline domains. Additionally, this technique enabled direct observation of lattice structures in hierarchical lamellae and the growth of crystals, confirming the local variability in lamellar orientation. This innovative approach significantly improves our understanding of polymer crystallization, linking changes in morphology and lattice structures at different length scales.
4D-STEM↗
High pO2 Flux Growth and Characterization of NdNiO3 Crystals
Single crystals of the perovskite nickelate NdNiO3 with dimensions of up to 50 μm on edge have been successfully grown using the flux method at a temperature of 400 °C and oxygen pressure of 200 bar. The crystals were investigated by a combination of techniques, including high-resolution synchrotron X-ray single-crystal and powder diffraction and physical property measurements such as magnetic susceptibility and resistivity. Resistivity measurements revealed a metal-insulator transition (MIT) at TMIT~180 K with apparent thermal hysteresis; however, no superlattice peaks or peak splitting below TMIT, which corresponds to a structural transition from Pbnm to P21/n, was observed. The successful growth of NdNiO3 crystals at relatively low temperatures and oxygen pressure provides an alternative approach for preparing single crystals of interesting perovskites such as RNiO3 (R = Sm-Lu) and parent phases of superconducting square planar nickelates.
Wang, Xiaoli↗
Sample-dependent and sample-independent thermal transport properties of α – RuCl 3
In this study, we investigated the thermal transport properties of two α–RuCl 3 crystals with different degrees of stacking disorder to understand the origin of the previously reported oscillatory feature in the field dependence of thermal conductivity. Crystal I shows only one magnetic order around 13 K, which is near the highest T N for α–RuCl 3 with stacking faults. Crystal II has less stacking disorder, with a dominant heat capacity at 7.6 K along with weak anomalies at 10 and 13 K. In the temperature and field dependence of thermal conductivity, no obvious anomaly was observed to be associated with the magnetic order around 13 K for either crystal or around 10 K for crystal II. Crystal II showed clear oscillations in the field dependence of thermal conductivity, while crystal I did not. For crystal I, an L-shaped region in the temperature-field space was observed where thermal Hall conductivity κ xy /T is within ±20% of the half quantized thermal Hall conductivity κ HQ /T, while for crystal II, κ xy /T reaches κ HQ /T only in the high field and high temperature regime with no indication of a plateau at κ HQ /T. Our thermal conductivity data suggest the oscillatory features are inherent to the zigzag ordered phase with T N near 7 K. Our planar thermal Hall effect measurements suggest the sensitivity of this phenomena to stacking disorder. Overall, our results highlight the importance of understanding and controlling crystallographic disorder for obtaining and interpreting intrinsic thermal transport properties in α–RuCl 3 .
36 MATERIALS SCIENCE↗
Why Seeding Works When Nucleation Barriers Vanish
This paper explains why seeds can speed up crystallization even when the formation of new crystal nuclei is not the slow step. In zeolite synthesis, local crystalline order can form relatively early, but the material may still appear poorly crystalline by X-ray diffraction because many small crystallites are misoriented and lack long-range coherence. Using coarse-grained molecular simulations, the study showed that seeds help solve this coherence problem. Rather than primarily lowering a nucleation barrier, seeds impose a common orientation on nearby growing crystallites, allowing them to merge into larger, better aligned domains. This accelerates the development of X-ray-detectable crystallinity even if the total amount of locally ordered material has not changed much. The work changes how induction times in zeolite synthesis should be interpreted: the delay before X-ray crystallinity appears can reflect the time needed to build long-range structural coherence, not simply the time needed to form crystalline material. This provides a new explanation for why seeding is effective in growth-limited crystallization and offers design principles for controlling crystallization rate and crystal quality.
36 MATERIALS SCIENCE↗
Extended Kohler's rule of magnetoresistance in TaCo 2 Te 2
TaCo 2 Te 2 is recently reported to be an air-stable, high mobility van der Waals material with probable magnetic order. Here we investigate the scaling behavior of its magnetoresistance. Here we measured both the longitudinal (p xx ) and Hall (p xy ) magnetoresistivities of TaCo 2 Te 2 crystals in magnetic fields parallel to the c axis and found that the magnetoresistance violates the Kohler's rule MR similar to f [H/p 0 ] while obeying the extended Kohler's rule MR ~ f [H/(n T p 0 )], where MR ~ [p xx (H) - p 0 ]/p 0 , H is the magnetic field, n T is a thermal factor, and p xx (H) and p 0 are the resistivities at H and zero field, respectively. Further, while deviating from those of the densities of electrons (n e ) and holes (n h ) obtained from the two-band model analysis of the magnetoconductivities, the temperature dependence of n T is close to that of the Hall carrier densities n H calculated from the slopes of p xy (H) curves at low magnetic fields, providing a different way to obtain the thermal factor in the extended Kohler's rule.
36 MATERIALS SCIENCE↗
Heterogeneous Ice Growth in Micron-Sized Water Droplets Due to Spontaneous Freezing
Understanding how ice nucleates and grows into larger crystals is of crucial importance for many research fields. The purpose of this study was to shed light on the phase and structure of ice once a nucleus is formed inside a metastable water droplet. Wide-angle X-ray scattering (WAXS) was performed on micron-sized droplets evaporatively cooled to temperatures where homogeneous nucleation occurs. We found that for our weak hits ice grows more cubic compared to the strong hits that are completely hexagonal. Due to efficient heat removal caused by evaporation, we propose that the cubicity of ice at the vicinity of the droplet’s surface is higher than for ice formed within the bulk of the droplet. Moreover, the Bragg peaks were classified based on their geometrical shapes and positions in reciprocal space, which showed that ice grows heterogeneously with a significant population of peaks indicative of truncation rods and crystal defects. Frequent occurrences of the (100) reflection with extended in-planar structure suggested that large planar ice crystals form at the droplet surface, then fracture into smaller domains to accommodate to the curvature of the droplets. Planar faulting due to misaligned domains would explain the increased cubicity close to the droplet surface.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
High dopant activation in arsenic doped single-crystal CdTe thin films: Insights from MBE growth and rapid thermal processing
Single-crystal model systems are valuable tools to investigate fundamental material properties. In this work, we use molecular beam epitaxy to deposit in situ arsenic (As) doped single-crystal CdTe films on large area Si substrates to better understand As doping for photovoltaic applications. We found that As incorporation is highly temperature dependent: a substrate temperature difference of 50 °C can lead to several orders of magnitude difference in As concentration. Cd overpressure during in situ doping may limit out-diffusion of As but decrease As incorporation, especially at lower growth temperatures. Carrier concentrations greater than 10 16 cm −3 can be achieved with or without Cd overpressure when annealed at temperatures above 500 °C. However, unlike the low (∼1% to 5%) dopant activation commonly observed in polycrystalline CdTe, our films achieve significantly higher activation ratios—exceeding 50%, and in some cases approaching 80%. These values are consistent with or exceed prior reports in single-crystal CdTe systems. In addition to as-deposited arsenic concentrations, we also consider arsenic distribution after different rapid thermal processing temperatures. We propose a detailed definition and description of how arsenic incorporation is considered and calculated. Due to carrier concentration saturation, As incorporation also needs to be controlled to average levels of 10 17 cm −3 to achieve high activation. These findings suggest that higher annealing temperature regimes may be beneficial to polycrystalline CdTe based PV devices.
36 MATERIALS SCIENCE↗
Crystallization of nanoparticles induced by precipitation of trace polymeric additives
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99 GENERAL AND MISCELLANEOUS↗
Carrier properties of Bi(111) grown on mica and Si(111)
A comparison is presented between properties of Bi(111) films grown by Stranski-Krastanov epitaxy on Si(111) 7 × 7 and by van der Waals epitaxy on mica substrates. Thin film morphologies and electronic transport properties of Bi(111) films of variable thickness are investigated for each growth method. Atomic force micrographs for Bi(111) films on mica reveal clearly defined triangular regions consisting of layered steps with height 0.4 nm, corresponding to the Bi(111) bilayer height. Variable-temperature electronic transport measurements show the existence of a quantum confinement-induced energy gap in the film interiors, resulting in a semimetal-to-semiconductor transition. Magnetotransport analysis in a three-carrier model including metallic electrons in surface states and electrons and holes in the films' interiors provides a detailed study of densities, mobilities, and mean-free paths of the three carrier types. Further, improved electronic transport properties are found in Bi(111) films of higher thickness on mica compared to on Si(111), a likely result of the largely strain-free van der Waals epitaxial growth.
36 MATERIALS SCIENCE↗
Three-dimensional superconductivity induced by an extremely small amount of Li in Li x SnSe 2
Unconventional superconductivity occurs often in materials with low dimensionality. Furthermore, we report superconductivity observed in layered Li x SnSe 2 with the superconducting transition temperature T c ~ 6 K. Through Li + intercalation in semiconducting SnSe 2 via electrochemical process, Li x SnSe 2 is formed with an extremely small x value as estimated from the c-axis lattice parameter, carrier concentration, and first-principles calculations.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
In situ TEM study of crystallization and chemical changes in an oxidized uncapped Ge 2 Sb 2 Te 5 film
Ge 2 Sb 2 Te 5 (GST-225) has been the most used active material in nonvolatile phase-change memory devices. Understanding the kinetics and dynamics involved in crystallization is critical for the optimization of materials and devices. A GST-225 thin film of 20 nm thickness was prepared by sputtering directly onto a Protochip and left uncapped and exposed to atmosphere for approximately 1 year. Here, early stages of crystallization and growth of the film have been studied inside the TEM from room temperature to 140 °C. The morphological and structural transformations have been studied by a C s -corrected environmental TEM, and images have been recorded using a high-speed low electron dose camera (Gatan K3 IS). The amorphous to crystalline transformation has been observed at ~35 °C. From the large field, high-resolution images obtained using the Gatan K3 IS camera early crystallization can be detected and nucleation rates and growth velocities can be obtained.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Crystallization Mechanisms of Poly(vinylidene Fluoride- co -chlorotrifluoroethylene): Nucleation Transitions, Growth Kinetics, and Microstructure Evolution
The crystallization kinetics of FK-800, a commercial semicrystalline copolymer of chlorotrifluoroethylene and vinylidene fluoride (poly(CTFE-co-VDF)), dictate its microstructure and functional performance. Crystallization occurs between the glass transition (T g ≈ 31 °C) and melting point (T m ≈ 110 °C), with grain boundaries playing a key role in applications such as memristors, where they regulate filament growth. This study integrates in situ atomic force microscopy (AFM), grazing-incidence wide-angle X-ray scattering (GIWAXS), and differential scanning calorimetry (DSC) to characterize nucleation, growth, and morphology across the full crystallization window. Hot-stage AFM reveals a transition from homogeneous to heterogeneous nucleation near 45 °C and a shift from reaction-limited to diffusion-limited growth above 60 °C. Kinetics are analyzed using Lauritzen–Hoffman, Turnbull–Fisher, and Avrami models to extract surface free energies and activation barriers. A multiscale modeling framework is developed in which nucleation densities and growth rates measured by AFM are used to reconstruct Avrami kinetics, which are then validated against coverage data, and extrapolated to predict bulk crystallization behavior observed by DSC. GIWAXS confirms a primarily flat-on chain orientation at all temperatures, linking orientation to domain morphology. This integrative approach quantitatively connects nanoscale crystallization dynamics with macroscopic phase evolution, establishing a quantitative framework for modeling crystallization across time, temperature, and length scales.
Crystallization↗
Composition dependence of bulk properties in the Co-intercalated transition metal dichalcogenide $\mathrm{Co_{1/3}TaS_2}$
Spontaneous Hall conductivity has recently been reported in the triangular lattice antiferromagnet Co 1/3 TaS 2 under a zero magnetic field. This phenomenon originates from the distinctive noncoplanar triple-Q magnetic ground state, possessing uniform real-space Berry curvature characterized by scalar spin chirality. We investigated the physical properties of Co 1/3 TaS 2 by judiciously controlling the composition, revealing a drastic change in its bulk properties, even by slight variations in cobalt composition, despite the same crystal structure. For 0.299≤x≤0.325, Co x TaS 2 keeps all the characteristics of the ground state consistent with the previous studies—two antiferromagnetic phase transitions at T N1 and T N2 ( N1 ), a large spontaneous Hall conductivity [σ xy (H=0)], and a weak ferromagnetic moment along the c axis. However, samples with x≥0.330 exhibit distinct bulk properties, including the absence of both σ xy (H=0) and the weak ferromagnetic moment. Our neutron diffraction data reveal that Co x TaS 2 with x≥0.330 develops coplanar helical magnetic order with q m1 =(1/3, 0, 0). This is entirely different from what has been seen in x≤0.325, explaining the observed composition dependence.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
A-type antiferromagnetic order in MnBi 4 Te 7 and MnBi 6 Te 10 single crystals
MnBi 4 Te 7 and MnBi 6 Te 10 are two members with n = 2 and 3 in the family of MnBi 2 n Te 3 n + 1 where the n = 1 member, MnBi 2 Te 4 , has been intensively investigated as the first intrinsic antiferromagnetic topological insulator. In this work, we report the A-type antiferromagnetic order in these two compounds by measuring magnetic properties, electrical and thermal transport, specific heat, and single-crystal neutron diffraction. Both compounds order into an A-type antiferromagnetic structure as does MnBi 2 Te 4 with ferromagnetic planes coupled antiferromagnetically along the crystallographic c axis. While no evidence for any in-plane ordered moment is found for MnBi 2 Te 4 or MnBi 6 Te 10 , weak reflections at half- L positions along the [0 0 L ] direction are observed for MnBi 4 Te 7 suggesting an in-plane ordered moment around 0.15 μ B / Mn . The ordering temperature, T N , is 13 K for MnBi 4 Te 7 and 11 K for MnBi 6 Te 10 . The magnetic order is also manifested in the anisotropic magnetic properties. Furthermore, for both compounds, the interlayer coupling is weak and a spin-flip transition occurs when a magnetic field of around 1.6 kOe is applied along the c axis at 2 K. As observed in MnBi 2 Te 4 , when cooling across T N , no anomaly was observed in the temperature dependence of thermopower. On the other hand, critical scattering effects are observed in thermal conductivity although the effect is less pronounced than that in MnBi 2 Te 4 .
36 MATERIALS SCIENCE↗