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At least 433 records · Page 24

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DOE OSTI2016

On the ohmicity of Schottky contacts

The conditions under which Schottky contacts become ohmic are analyzed. Proceeding from classical concepts of the mechanisms of current flow, a generalized Schottky contact model is investigated. This model takes into account the thermionic current of majority charge carriers and the recombination current of minority carriers in Schottky contacts with a dielectric gap. Based on an analysis of the predictions of this model, ohmicity criteria are obtained for Schottky contacts and the conditions for a low injection level and the ohmicity of Si-based Schottky contacts are compared. It is shown that the conditions for Schottky-contact ohmicity do not coincide with those for p–n junctions.

36 MATERIALS SCIENCE↗

DOE OSTI2018

Tunneling Current in Oppositely Connected Schottky Diodes Formed by Contacts between Degenerate n-GaN and a Metal

The nonlinear behavior of the I–V characteristics of symmetric contacts between a metal and degenerate n-GaN, which form oppositely connected Schottky diodes, is investigated at free-carrier densities from 1.5 × 10{sup 19} to 2.0 × 10{sup 20} cm{sup –3} in GaN. It is demonstrated that, at an electron density of 2.0 × 10{sup 20} cm{sup –3}, the conductivity between metal (chromium) and GaN is implemented via electron tunneling and the resistivity of the Cr–GaN contact is 0.05 Ω mm. A method for determining the parameters of potential barriers from the I–V characteristics of symmetric opposite contacts is developed. The effect of pronounced nonuniformity of the current density and voltage distributions over the contact area at low contact resistivity is taken into account. The potential-barrier height for Cr–n{sup +}-GaN contacts is found to be 0.47 ± 0.04 eV.

36 MATERIALS SCIENCE↗

DOE OSTI2018

Impact of the Periphery Electrostatic Field on the Photovoltaic Effect in Metal–Semiconductor Contacts with a Schottky Barrier

Studies of an electrostatic system of flat metal–semiconductor contacts with a Schottky barrier reveals a nontrivial dependence of their current and voltage photosensitivity (the photovoltaic effect) on the contact shape. The specific features of using the photovoltaic effect in such contacts are determined, to a great extent, by the built-in periphery electrostatic field with an absolute value that depends on the contact perimeter and area. Thus, to increase the efficiency of light-to-electrical energy conversion by Schottky contacts, it is necessary to use optimization techniques based on the concepts of the proposed physical model of an electrostatic system of flat Schottky contacts with regard to periphery electrostatic fields. The “hot electron resonance” effect, which enhances the external quantum efficiency of photodiodes with a Schottky barrier, can be explained by enhancement of the field emission of electrons by the periphery electrostatic field.

14 SOLAR ENERGY↗

DOE OSTI2017

Planar Ohmic Contacts to Al 0.45 Ga 0.55 N/Al 0.3 Ga 0.7 N High Electron Mobility Transistors

Here, we present a low resistance, straightforward planar ohmic contact for Al 0.45 Ga 0.55 N/Al 0.3 Ga 0.7 N high electron mobility transistors. Five metal stacks (a/Al/b/Au; a = Ti, Zr, V, Nb/Ti; b = Ni, Mo, V) were evaluated at three individual annealing temperatures (850, 900, and 950°C). The Ti/Al/Ni/Au achieved the lowest specific contact resistance at a 900°C anneal temperature. Transmission electron microscopy analysis revealed a metal-semiconductor interface of Ti-Al-Au for an ohmic (900°C anneal) and a Schottky (850°C anneal) Ti/Al/Ni/Au stack. HEMTs were fabricated using the optimized recipe with resulting contacts that had room-temperature specific contact resistances of ρ c = 2.5 × 10 -5 Ω cm², sheet resistances of R SH = 3.9 kΩ/$\blacksquare$, and maximum current densities of 75 mA/mm (at VGATE of 2 V). Electrical measurements from -50 to 200°C had decreasing specific contact resistance and increasing sheet resistance, with increasing temperature. These contacts enabled state-of-the-art performance of Al 0.45 Ga 0.55 N/Al 0.3 Ga 0.7 N HEMTs.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Cesium Batch Contact Equilibrium Testing of Crystalline Silicotitanate (CST) Sieve Cuts in SRS Average Simulant and Examination of CST Samples Aged in Caustic and Simulant in Support of Tank Closure Cesium Removal 1A (TCCR-1A)

Batch contact testing to determine cesium equilibrium loading on Crystalline Silicotitanate ion exchange media in Savannah River Site Average Waste Simulant at 25 °C indicated that smaller diameter particles isolated by sieving pretreated CST media may load slightly higher (<10%) amounts of cesium, though the differences are within analytical uncertainty. In addition, ion exchange media sub-samples stored in 2-4 M NaOH and caustic simulant solutions for ~2.5 years were examined by optical microscopy and the 3 M NaOH sample was also analyzed to determine whether changes in the particle size distribution occurred during storage. No visual indications of particle attrition or agglomeration were observed for any sample. Particle size analysis indicated that a slight decrease occurred in the average particle diameter following contact with 3 M NaOH (541 µm average diameter versus 566 µm for the pretreated CST prior to contact). A small increase (from 0 to <0.5 wt. %) in the number of particles ranging from 271 and 322 µm was also observed for the CST sample contacted with 3 M NaOH relative to a sample of the original pretreated material. However, this small change could be due to sub-sampling differences or analytical uncertainty. It does not appear that small particles are formed to a significant degree during CST caustic contact or that small particles which do form (presumably from attrition of larger particles during pretreatment) load significantly more cesium than the bulk material. Minimal other negative consequences were observed associated with CST extended caustic or simulant contact, except for the tendency for more concentrated salt solutions to form some salt crystals which deposit on the media over time.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

DOE OSTI2024

Electron/hole selectivity in organic semiconductor contacts for solar energy conversion (Final Report)

Four major and accomplishments for the project "Electron/hole selectivity in organic semiconductor contacts for solar energy conversion.'' are reported. The first is a development of a model describing the contact-determined behavior of a solar cell. The most basic solar cell consists of an intrinsic (pure) semiconductor that acts as an absorber to which contacts are made that provide the asymmetry needed to create a driving force (voltage) for the directional flow of electrons (current), in other words, to convert sunlight into electrical energy. The asymmetry at the contacts comes from the different rate at which electrons and holes, the charge carriers generated by illumination, are collected. We developed a model that describes the ideal current-voltage, and hence energy converting properties, of an ideal photovoltaic that is entirely determined by the kinetics for these charge collection processes. Second, we measured how organic semiconductor interfacial layers impact contact electron and hole transfer rates at semiconductor interfaces and described how these concepts do or do not determine the open-circuit voltage of a solar cell. The work clearly controverts common general misconceptions about the action of contact interfacial layers, such as the idea that improved selectivity for one carrier over the other results from decreased recombination, and quantitatively demonstrates how specific interfacial layer materials act to improve the efficiency of a solar cell. Third, we measured the sub-band gap external quantum efficiency (EQE) of a series of organometal halide perovskite (“perovskite”) solar cells. These measurements quantified band-tailing and revealed defect states, which can cause recombination, that correlate with composition, performance, and hysteresis. Finally, we developed a semiconductor bipolar membrane that uses light to pump ions. This structure is unique among systems that drive ion gradients using light in that it is designed to pump salt rather than one sign of ion; it is a photochemical salt pump.

14 SOLAR ENERGY↗

DOE OSTI2024

Characterization of Mn 5 Ge 3 Contacts on a Shallow Ge/SiGe Heterostructure

Mn 5 Ge 3 is a ferromagnetic phase of the Mn-Ge system that is a potential contact material for efficient spin injection and detection. Here, we investigate the creation of Mn 5 Ge 3 -based contacts on a Ge/SiGe quantum well heterostructure via solid-state synthesis. X-ray diffraction spectra fitting indicates the formation of Mn 5 Ge 3 -based contacts on bulk Ge and Ge/SiGe. High-resolution scanning transmission electron microscopy imaging and energy dispersive X-ray spectroscopy verify the correct Mn 5 Ge 3 -based phase formation. Schottky diode measurements, transmission line measurements, and Hall measurements reveal that Mn 5 Ge 3 -based contacts serve as good p-type contacts for Ge/SiGe quantum well heterostructures due to having a low Schottky barrier height of 0.10 eV (extracted from a Mn 5 Ge 3 /n-Ge analogue) and a contact resistance in the order of 1 kΩ. Furthermore, we show that these electrical characteristics have a gate-voltage dependence, thereby providing tunability.

36 MATERIALS SCIENCE↗

NASA NTRS1972

Electric contact phenomena in ultra clean and specifically contaminated systems.

Contact resistance has been used to characterize the processes of physical contact in metallic systems with ultra clean surfaces. The contact resistance versus load curves of iron and two cobalt alloys were used to demonstrate the existence of surface work hardening and interfacial creep during contact as well as the fracture characteristics of an interfacial junction as the load is removed. The presence of an adsorbed film of hydrogen or hydrogen ions on iron completely changes the contact process. A comparison of the contact resistance versus load data for ultra pure iron, an iron-cobalt alloy and a cobalt molybdenum-chromium was used to illustrate the effect of substrate mechanical properties on static adhesion and the ability to convert these data for the estimation of the dynamic coefficient of friction under the particular experimental conditions.

Keller, D. V., Jr.↗

NASA NTRS1971

Electric contact phenomena in ultra clean and specifically contaminated systems.

Contact resistance has been used to characterize the processes of physical contact in metallic systems with ultraclean surfaces. The contact resistance versus load curves of iron and two cobalt alloys were used to demonstrate the existence of surface work hardening and interfacial creep during contact as well as the fracture characteristics of an interfacial junction as the load is removed. The presence of an adsorbed film of hydrogen or hydrogen ions on iron completely changes the contact process. A comparison of the contact resistance versus load data for ultrapure iron, and iron-cobalt alloy, and a cobalt molybdenum-chromium was used to illustrate the effect of substrate mechanical properties on static adhesion and the ability to convert these data for the estimation of the dynamic coefficient of friction under the particular experimental conditions.

Keller, D. V., Jr.↗

NASA NTRS1972

Design and fabrication of wraparound contact silicon solar cells

Both dielectric insulation and etched junction contact techniques were evaluated for use in wraparound contact cell fabrication. Since a suitable process for depositing the dielectrics was not achieved, the latter approach was taken. The relationship between loss of back contact and power degradation due to increased series resistance was established and used to design a simple contact configuration for 10 ohm-cm etched wraparound junction contact N/P cells. A slightly deeper junction significantly improved cell curve shape and the associated loss of current was regained by using thinner contact grid fingers. One thousand cells with efficiencies greater than 10.5% were fabricated to demonstrate the process.

Scott-Monck, J. A.↗

NASA NTRS1976

Shear strength of metal-sapphire contacts

The shear strength of polycrystalline Ag, Cu, Ni, and Fe contacts on clean (0001) sapphire has been studied in ultrahigh vacuum. Both clean metal surfaces and surfaces exposed to O2, Cl2, and C2H4 were used. The results indicate that there are two sources of strength of Al2O3-metal contacts: an intrinsic one that depends on the particular clean metal in contact with Al2O3 and an additional one due to intermediate films. The shear strength of the clean metal contacts correlated directly with the free energy of oxide formation for the lowest metal oxide, in accord with the hypothesis that a chemical bond is formed between metal cations and oxygen anions in the sapphire surface. Contacts formed by metals exposed to chlorine exhibited uniformly low shear strength indicative of van der Waals bonding between chlorinated metal surfaces and sapphire. Contacts formed by metals exposed to oxygen exhibited enhanced shear strength, in accord with the hypothesis that an intermediate oxide layer increases interfacial strength.

Pepper, S. V.↗

NASA NTRS1980

Contact law and impact responses of laminated composites

Static identation tests were performed to determine the law of contact between a steel ball and glass/epoxy and graphite/epoxy laminated composites. For both composites the power law with an index of 1.5 was found to be adequate for the loading curve. Substantial permanent deformations were noted after the unloading. A high order beam finite element was used to compute the dynamic contact force and response of the laminated composite subjected to the impact of an elastic sphere. This program can be used with either the classical Hertzian contact law or the measured contact law. A simple method is introduced for estimating the contact force and contact duration in elastic impacts.

Sun, C. T.↗

NASA NTRS1981

Dynamics of solid dispersions in oil during the lubrication of point of contacts. Part 2: Molybdenum disulfide

A Hertzian contact consisting of a steel ball in contact with a glass disk is lubricated with MoS2 dispersions and observed by optical microscopy at various slide/roll conditions. In general the behavior of MoS2 and graphite are similar. That is, the solids tend to enter the contact and form a film on the contacting surfaces whenever a rolling component of motion is used, but solid particles seldom enter the contact during pure sliding. The MoS2 has more pronounced plastic flow behavior than graphite. However, the polished steel ball is more readily scratched by MoS2 than by graphite. Under the conditions of these studies, lower friction and wear are observed with pure oil rather than with the dispersions. However under other conditions (such as different contact geometry or rougher surfaces) the solid lubricant dispersions might be beneficial.

Cusano, C.↗

NASA NTRS1981

Ohmic contacts to GaAs for high-temperature device applications

Ohmic contacts to n-type GaAs were developed for high temperature device applications up to 300 C. Refractory metallizations were used with epitaxial Ge layers to form the contacts: TiW/Ge/GaAs, Ta/Ge/GaAs, Mo/Ge/GaAs, and Ni/Ge/GaAs. Contacts with high dose Si or Se ion implantation of the Ge/GaAs interface were also investigated. The contacts were fabricated on epitaxial GaAs layer grown on N+ or semi-insulating GaAs substrates. Ohmic contact was formed by both thermal annealing (at temperatures up to 700 C) and laser annealing (pulsed Ruby). Examination of the Ge/GaAs interface revealed Ge migration into GaAs to form an N+ doping layer. The specific contact resistances of specimens annealed by both methods are given.

Anderson, W. T., Jr.↗

NASA NTRS1983

A tire contact solution technique

An efficient method for calculating the contact boundary and interfacial pressure distribution was developed. This solution technique utilizes the discrete Fourier transform to establish an influence coefficient matrix for the portion of the pressurized tire surface that may be in the contact region. This matrix is used in a linear algebra algorithm to determine the contact boundary and the array of forces within the boundary that are necessary to hold the tire in equilibrium against a specified contact surface. The algorithm also determines the normal and tangential displacements of those points on the tire surface that are included in the influence coefficient matrix. Displacements within and outside the contact region are calculated. The solution technique is implemented with a finite-element tire model that is based on orthotropic, nonlinear shell of revolution elements which can respond to nonaxisymmetric loads. A sample contact solution is presented.

Tielking, J. T.↗

NASA NTRS1984

Ohmic Versus Rectifying Contacts of Au to N-gaas by Ion Sputtering

Results of investigations of argon ion sputtering of heavily doped n-GaAs are compared with those obtained from studies of Au/low doping density n-GaAs contacts. The Au contact on Si-doped GaAs was nearly ohmic when the surface contamination (carbon and oxides) was reduced prior to deposition by chemical cleaning. However, when ion sputtering was used in situ to clean the surface, rectifying contact was produced whose barrier height varied with the energy of the sputtering ion. It was found that ion sputtering of GaAs doped to more than 3 x 10 to the 18th power/cu may be used to change ohmic contact to rectifying contacts. The barrier height may be changed by changing the ion energy. The behavior results from the sputter creation of deep level acceptor states at the GaAs surface. Annealing after sputtering can restore the contact to nearly an ohmic character.

Wang, Y. X.↗

NASA NTRS1985

Study of Contact Resistances in Integrated Circuits

Techniques explored in search for rapid, reliable test. Resistances of aluminum/silicon contacts and methods to measure subjects of NASA report. Study with three tasks undertaken to evaluate nature and reliability of large numbers of semiconductor contacts of type now being fabricated in integrated circuits: Develop yield analysis for series strings of contacts using wafer-level electrical measurements, and identify different types of faults by visual inspection; develop wafer-level tests to evaluate reliability of contact strings; and develop mathematical model for current flow in contacts and examine contact region for evidence of micro-alloying.

Buehler, M. G.↗

NASA NTRS1985

Some practical considerations for economical back contact formation on high efficiency solar cells

The back contact can detract from solar cell performance in a number of ways: high recombination, barrier, photovoltaic, minority carrier collection, resistance. These effects may act in a nonuniform fashion over the cell area, and complicate the analysis of photovoltaic performance aimed at a better understanding of the effects of device geometry and material and/or processing parameters. The back contact is tested by reproducing it on both sides of a substrate. The objective is to find a back contact which performs well as a back contact, can be applied cheaply to large area solar cells, fits well into a practical process sequence, does not introduce structural damage or undesirable impurities into the silicon substrate, is compatible with an effective front contact technology, permits low temperature solder contacting, adheres well to silicon, and is reliable.

Lesk, I. A.↗