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Results for “CONTACT RESISTANCE”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 433 records · Page 24
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Local nm-Scale Imaging of Electrical Contact for Series Resistance Degradation of Silicon Solar Cells

We report on an electrical conduction mechanism for series resistance (Rs) degradation observed in a utility scale solar farm by nm-scale imaging of the local resistance at the Ag/Si interface of c-Si front metallization. Scanning spreading resistance microscopy imaging revealed that the number of point or small area electrical contacts decreased in a degraded cell compared to an unaffected cell, demonstrating the direct root cause of the Rs degradation. The degraded cell shows both a morphological and chemical difference in the screen-printed finger contact compared to the unaffected cell, which likely caused the degradation during the long-term field service. The reduction in electrical contact is likely caused by a structural change: The Ag particles in contact with the Si cell aggregate into bulk Ag, and a highly resistive ceramic oxide is formed in a "belt" shape at the Ag/Si interface. This resistive belt with a thickness of ~1 um blocks the current conduction from cell emitter to the Ag grid. Our results demonstrate an example of the multi-scale characterization approach for understanding degradation mechanisms in photovoltaics.

c-Si solar cell↗
NASA NTRS1989

Chain Of Test Contacts For Integrated Circuits

Test structure forms chain of "cross" contacts fabricated together with large-scale integrated circuits. If necessary, number of such chains incorporated at suitable locations in integrated-circuit wafer for determination of fabrication yield of contacts. In new structure, resistances of individual contacts determined: In addition to making it possible to identify local defects, enables generation of statistical distributions of contact resistances for prediction of "parametric" contact yield of fabrication process.

Lieneweg, Udo↗
DOE OSTI2024

Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts

Abstract Epitaxial regrowth processes are presented for achieving Al‐rich aluminum gallium nitride (AlGaN) high electron mobility transistor (HEMTs) with p‐type gates with large, positive threshold voltage for enhancement mode operation and low resistance Ohmic contacts. Utilizing a deep gate recess etch into the channel and an epitaxial regrown p‐AlGaN gate structure, an Al 0.85 Ga 0.15 N barrier/Al 0.50 Ga 0.50 N channel HEMT with a large positive threshold voltage (V TH = +3.5 V) and negligible gate leakage is demonstrated. Epitaxial regrowth of AlGaN avoids the use of gate insulators which can suffer from charge trapping effects observed in typical dielectric layers deposited on AlGaN. Low resistance Ohmic contacts (minimum specific contact resistance = 4 × 10 −6 Ω cm 2 , average = 1.8 × 10 −4 Ω cm 2 ) are demonstrated in an Al 0.85 Ga 0.15 N barrier/Al 0.68 Ga 0.32 N channel HEMT by employing epitaxial regrowth of a heavily doped, n‐type, reverse compositionally graded epitaxial structure. The combination of low‐leakage, large positive threshold p‐gates and low resistance Ohmic contacts by the described regrowth processes provide a pathway to realizing high‐current, enhancement‐mode, Al‐rich AlGaN‐based ultra‐wide bandgap transistors.

36 MATERIALS SCIENCE↗
NASA NTRS1972

Humidity resistant solar cell contacts

Gold-platinum solar cell contact is developed which does not exhibit chemical reactivity of titanium or porosity of silver. This contact offers excellent ohmic characteristics and stability in humid air.

Bishop, C. J.↗
NASA NTRS1987

New flange correction formula applied to interfacial resistance measurements of ohmic contacts to GaAs

A quasi-two-dimensional analytical model is developed to account for vertical and horizontal current flow in and adjacent to a square ohmic contact between a metal and a thin semiconducting strip which is wider than the contact. The model includes side taps to the contact area for voltage probing and relates the 'apparent' interfacial resistivity to the (true) interfacial resistivity, the sheet resistance of the semiconducting layer, the contact size, and the width of the 'flange' around the contact. This relation is checked against numerical simulations. With the help of the model, interfacial resistivities of ohmic contacts to GaAs were extracted and found independent of contact size in the range of 1.5-10 microns.

Lieneweg, Udo↗
NASA NTRS1990

The effect of electron irradiation on YBa2Cu3O(x) with gold bead contacts

The effect of 1-MeV electron irradiation, up to a total dose of 5.7 x 10 to the 17th electrons/sq cm at room temperature on YBa2Cu3O(x) was investigated using gold bead contacts made by the melting technique. The superconducting transition temperature Tc, the critical current density Jc at 77 K, the normal-state resistivity, and the contact resistance for gold bead contacts were measured as a function of fluence on the same samples without disturbing the contacts. Tc remained constant at 91 K, and Jc at 77 K remained constant around 90 A/sq cm. The normal-state resistivity increased systematically by about 15 percent for the total dose. Finally, the surface contact resistance at 77 K remained less than 4.2 microohm sq cm throughout the radiations. These studies took place over an 8-month period, and subsequent measurements indicate that the results are definitely due to radiation effects and not aging effects. It is concluded that the superconductor YBa2Cu3O(x) with gold bead contacts would perform well in a space environment of electron irradiation.

Caton, R.↗
DOE OSTI2021

Shear Stress Dependence of Force Networks in 3D Dense Suspensions

The geometric organization and force networks of 3D dense suspensions that exhibit both shear thinning and thickening have been examined as a function of varying strength of interparticle attractive interactions using lubrication flow discrete element simulations. Significant rearrangement of the geometric topology does not occur at either the local or global scale as these systems transition across the shear thinning and shear thickening regimes. In contrast massive rearrangements in the balance of attractive, lubrication, and contact forces are observed with interesting behavior of network growth and competition. In agreement with prior work, in shear thinning regions the attractive force is dominant, however as the shear thickening region is approached there is growth of lubrication forces. Lubrication forces oppose the attraction forces, but as viscosity continues to increase under increasing shear stress, the lubrication forces are dominated by contact forces that also resist attraction. Contact forces are the dominant interactions during shear thickening and are an order of magnitude higher than their values in the shear-thinning regime. At high attractive interaction strength, contact networks can form even under shear thinning conditions, however high shear stress is still required before contact networks become the driving mechanism of shear thickening. Analysis of the contact force network during shear thickening generally indicate a uniformly spreading network that rapidly forms across empty domains, however the growth patterns have structure that are significantly dependent upon the strength of interparticle interactions, indicating subtle variations in the mechanism of shear thickening.

Edens, Lance E.↗
NASA NTRS2012

NARloy-Z-Carbon Nanotube Composites

Motivation: (1) NARloy-Z (Cu-3%Ag-0.5%Zr) is the state of the art, high thermal conductivity structural alloy used for making liquid rocket engine main combustion chamber liner. It has a Thermal conductivity approx 80% of pure copper. (2) Improving the thermal conductivity of NARloy-Z will help to improve the heat transfer efficiency of combustion chamber. (3)Will also help to reduce the propulsion system mass and increase performance. It will also increases thrust to weight ratio. (4) Improving heat transfer helps to design and build better thermal management systems for nuclear propulsion and other applications. Can Carbon nanotubes (CNT) help to improve the thermal conductivity (TC)of NARloy-Z? (1)CNT's have TC of approx 20X that of copper (2) 5vol% CNT could potentially double the TC of NARloy-Z if properly aligned (3) Improvement will be less if CNT s are randomly distributed, provided there is a good thermal bond between CNT and matrix. Prior research has shown poor results (1) No TC improvement in the copper-CNT composite reported (2)Reported values are typically lower (3) Attributed to high contact thermal resistance between CNT and Cu matrix (4)Results suggest that a bonding material between CNT and copper matrix is required to lower the contact thermal resistance It is hypothesized that Zr in NARloy-Z could act as a bonding agent to lower the contact thermal resistance between CNT and matrix.

Bhat, Biliyar N.↗
DOE OSTI2023

Differential multi-probe thermal transport measurements of multi-walled carbon nanotubes grown by chemical vapor deposition

Carbon nanotubes (CNTs) are quasi-one dimensional nanostructures that display both high thermal conductivity for potential thermal management applications and intriguing low-dimensional phonon transport phenomena. In comparison to the advances made in the theoretical calculation of the lattice thermal conductivity of CNTs, thermal transport measurements of CNTs have been limited by either the poor temperature sensitivity of Raman thermometry technique or the presence of contact thermal resistance errors in sensitive two-probe resistance thermometry measurements. Here we report advances in a multi-probe measurement of the intrinsic thermal conductivity of individual multi-walled CNT samples that are transferred from the growth substrate onto the measurement device. The sample-thermometer thermal interface resistance is directly measured by this multi-probe method and used to model the temperature distribution along the contacted sample segment. The detailed temperature profile helps to eliminate the contact thermal resistance error in the obtained thermal conductivity of the suspended sample segment. A differential electro-thermal bridge measurement method is established to enhance the signal-to-noise ratio and reduce the measurement uncertainty by over 40%. The obtained thermal resistances of multiple suspended segments of the same MWCNT samples increase nearly linearly with increasing length, revealing diffusive phonon transport as a result of phonon-defect scattering in these MWCNT samples. The measured thermal conductivity increases with temperature and reaches up to 390 ± 20 W m –1 K –1 at room temperature for a 9-walled MWCNT. In conclusion, theoretical analysis of the measurement results suggests submicron phonon mean free paths due to extrinsic phonon scattering by extended defects such as grain boundaries. The obtained thermal conductivity is decreased by a factor of 3 upon electron beam damage and surface contamination of the CNT sample.

42 ENGINEERING↗
NASA NTRS1985

Eutectic Contact Inks for Solar Cells

Low-resistance electrical contacts formed on solar cells by melting powders of eutectic composition of semiconductor and dopant. Process improves cell performance without subjecting cell to processing temperatures high enough to degrade other characteristics.

Ross, B.↗
NASA NTRS2001

Study of Electrical Contacts and Devices in Advanced Semiconductors

Research conducted at Tuskegee University concentrates on electrical contacts to GaN films and their characterization with the objective of understanding contact formation and realizing low-resistance metal contacts. Contact properties are known to be strongly related to surface preparation. It appears that the as-received material had a thin oxide film on the surface of the GaN film. Various cleaning treatments were employed in order to render the surface contamination free and removal of the oxide film. Metal films were then deposited by e-beam evaporation. Electrical characteristics of these contacts indicated that the optimal treatment was an organic solvent cleaning followed by etching in buffered oxide solution. Contacts established with Al were observed to be ohmic in nature, whereas Au, Cr, Ti, and Pt exhibit rectifying contacts. Platinum contacts were almost ideal as shown by an ideality factor of 1.02.

Hall, H. P.↗
NASA NTRS1967

Thin film process forms effective electrical contacts on semiconductor crystals

Process makes microscopic, low-resistance electrical contacts on hexagonal n-type silicon carbide crystals used for microelectronic devices. A vacuum deposition of aluminum is etched to expose the bare silicon carbide where the electrical contacts are made. Sputtering alternating layers of tantalum and gold forms the alloy film.

Formigoni, N. P.↗
DOE OSTI2024

Fabrication and Performance Evaluation of Double-Sided Copper Nanowire Arrays as Thermal and Electrical Interfacial Layers

Reducing contact interface thermal and electrical resistances is in great demand across various industries, particularly in the semiconductor industry. This study introduces an approach using double-sided copper nanowire (Cu NW) arrays on copper sheets as both thermal and electrical interfacial layers, designed to effectively accommodate the topographical inconsistencies between contact surfaces. Further, experimental outcomes reveal a significant reduction in thermal contact resistance (TCR), with a value of 2.5 mm 2 K W –1 , thereby exceeding the efficiency of reported nanostructural thermal interface materials (TIMs). Additionally, when utilized as an electrical interfacial layer, these double-sided Cu NWs arrays dramatically reduced electrical contact resistance (ECR), outperforming traditional conductive grease in applications necessitating separable bonding, though showing comparable performance to costly silver-based conductive epoxies required for permanent, inseparable bonds. The promising results of the double-sided Cu NWs arrays in reducing both TCR and ECR, confirmed by finite element simulation, highlight their substantial potential in advancing TIMs and electrical interconnection applications across various sectors.

42 ENGINEERING↗
NASA NTRS1967

Spreading resistance as a function of frequency.

Field equations for spreading resistance of variable capacitance diode and point contact variable resistance diode derived in terms of frequency, material characteristics and physical parameters

PARAMETRIC DIODE↗
NASA NTRS1980

Ohmic contact to p-type indium phosphide

Low-Series-resistance ohmic contact to p-type InP semiconductor material is achieved in technique utilizing Au-Ge-Zn eutectic alloy. Alloy sets and adheres well to semiconductor surface with higher acceptor concentration at metal semiconductor interface. Technique has provided satisfactory for pn junction LED's and lasers.

Hawrylo, F. Z.↗
DOE OSTI2021

Controlled exposure of CuO thin films through corrosion-protecting, ALD-deposited TiO 2 overlayers

Ultra-thin film coatings are used to protect semiconductor photoelectrodes from the harsh chemical environments common to photoelectrochemical energy conversion. These layers add contact transfer resistance to the interface that can result in a reduction of photoelectrochemical energy conversion efficiency of the photoelectrode. Here, we describe the concept of a partial protection layer, which allows for direct chemical access to a small fraction of the semiconductor underlayer for further functionalization by an electrocatalyst. The rest of the interface remains protected by a stable, inert protection layer. CuO is used as a model system for this scheme. Atomic layer deposition (ALD)-prepared TiO 2 layers on CuO thin films prepared from electrodeposited Cu 2 O allow for the control of interfacial morphology to intentionally expose the CuO underlayer. The ALD-TiO 2 overlayer shrinks during crystallization, while Cu 2 O in the underlayer expands during oxidation. As a result, the TiO 2 protection layer cracks to expose the oxidized underlying CuO layer, which can be controlled by preceding thermal oxidation. Furthermore, this work demonstrates a potentially promising strategy for the parallel optimization of photoelectrochemical interfaces for chemical stability and high performance.

14 SOLAR ENERGY↗
DOE OSTI2024

Planarization of p -GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs

The large polarization barriers between the quantum wells and quantum barriers in long-wavelength GaN-based light-emitting diodes (LEDs) inhibit their performance by requiring excess driving voltages to reach standard operating current densities. Lateral injection of carriers directly into quantum wells is required to circumvent this issue. V-defects are naturally occurring inverted hexagonal defects with semipolar {$10\bar{1}1$}-plane sidewalls generated on surface depressions from threading dislocations. LEDs engineered to intentionally generate V-defects below the active region of the LED can achieve lateral carrier injection through the V-defect sidewalls and have already been able to demonstrate world record wall-plug efficiencies for LEDs in the green-red wavelengths. V-defects can be enlarged during kinetically limited growth where the growth rate of the c-plane GaN is faster than that of their sidewalls, leaving them unfilled. We report on the metal organic chemical vapor deposition growth conditions required to fill in V-defects with p-GaN during epitaxial growth of the LED post the active region. Circular transmission length measurements of Pd/Au contacts processed on p-GaN surfaces with various amounts of unfilled V-defects showed no significant difference in their sheet resistance and specific contact resistance. J–V measurements of LEDs grown with varying unfilled V-defect densities showed no significant difference in the forward bias regime. However, in the reverse bias regime, catastrophic breakdown occurred at markedly lower voltages for samples with larger unfilled V-defect densities. This suggests that unfilled V-defects may act as hotspots for device failure, and planarizing LED surfaces may help prevent early degradation of LED devices.

Chemical vapor deposition↗