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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 433 records · Page 24
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Dataset from Manuscript: CO2 Electroreduction on Borated Copper Surfaces: Boron Active Sites, not Copper

(1) hcoverage-gcga: .db files with structures and data from GCGA sampling at various potentials (2) hcoverage-gcdft/vaspSC-finished.db: .db file with GCDFT calculations and structures on the sub-ensemble of various H coverages on CuB(3) int_ts: Optimized structures of intermediates and transition states for HER (H26.db and H39.db for LC and HC respectively), B migration (H33.db and H34.db), and CORR (H26.db and H39.db for LC and HC respectively)

Boron↗
DOE OSTI2020

Boron-Made N 2 : Realization of a B$\equiv$B Triple Bond in the B 2 Al 3 – Cluster

Until now, all B≡B triple bonds have been achieved by adopting two ligands in the L→B≡B←L manner. Herein, we report an alternative route of designing the B≡B bonds based on the assumption that by acquiring two extra electrons, an element with the atomic number Z can have properties similar to those of the element with the atomic number Z + 2. Specifically, we show that due to the electron donation from Al to B, the negatively charged B≡B kernel in the B 2 Al 3 – cluster mimics a triple N≡N bond. Comprehensive computational searches reveal that the global minimum structure of B 2 Al 3 – exhibits a direct B–B distance of 1.553 Å, and its calculated electron vertical detachment energies are in excellent agreement with the corresponding values of the experimental photoelectron spectrum. Chemical bonding analysis revealed one σ and two π bonds between the two B atoms, thus confirming a classical textbook B≡B triple bond, similar to that of N 2 .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

One-Particle and Excitonic Band Structure in Cubic Boron Arsenide

Cubic BAs has received recent attention for its large electron and hole mobilities and large thermal conductivity. This is a rare and much desired combination in semiconductor industry: commercial semiconductors typically have high electron mobilities, or hole mobilities, or large thermal conductivities, but not all of them together. Here, in this paper, predictions from an advanced self-consistent many-body perturbative theory are reported and it is shown that with respect to one-particle properties, BAs is strikingly similar to Si. There are some important differences, notably there is an unusually small variation in the valence band masses. With respect to two-particle properties, significant differences with Si appear. The excitonic spectrum for both q = 0 and finite q is reported, and it is shown that while the direct gap in cubic BAs is about 4 eV, dark excitons can be observed down to about ≈1.5 eV, which may play a crucial role in application of BAs in optoelectronics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Role of E × B Drift in Divertor Detachment Control via Boron Powder Injection on EAST

Here, the effects of B powder injection on plasma detachment about EAST discharge were studied by using SOLPS-ITER code package with the effects of E × B drifts considered. The simulation results show that plasma detachment occurs at the inner target in favourable toroidal magnetic field (B t ) direction at a relatively low B powder flow rate, one order of magnitude lower than that at the outer target. In a similar scenario with unfavourable B t , it is found that the detachment thresholds of B flow rate for both the inner and outer targets are close and of the same order as that for the outer target with favourable Bt. In favourable B t direction at B powder flow rate of 1.2 × 10 21 atoms/s, a localized, broadened high-density region is formed near the inner target benefitted by the injection location and the E × B drift, and a radiation-intensified zone, mostly contributed by B 1+ and B 2+ , occurs there. The E × B drift facilitates plasma detachment at the inner target and simultaneously amplifies the in–out divertor asymmetry. In addition, the simulation results with three different injection locations show that the injection from outer strike point leads to the lowest Z eff inside the separatrix and has an intermediate flow rate for detachment at the outer target, comparing with the X-point and upstream locations.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗