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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 433 records · Page 24
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Strong enhancement in thermal conductivity of ethylene glycol-based nanofluids by amorphous and crystalline Al{sub 2}O{sub 3} nanoparticles

In the present work, the temperature and concentration dependence of thermal conductivity (TC) enhancement in ethylene glycol (EG)-based amorphous and crystalline Al{sub 2}O{sub 3} nanofluids have been investigated at temperatures ranging from 0 to 100 °C. In our prior study, nanometer-sized particles of amorphous-, γ-, and α-Al{sub 2}O{sub 3} were prepared via a simple sol-gel process with annealing at different temperatures and characterized by various techniques. Building upon the earlier study, we probe here the crystallinity, microstructure, and morphology of the obtained α-Al{sub 2}O{sub 3} nanoparticles (NPs) by using X-ray powder diffraction with Rietveld full-profile refinement, scanning electron microscopy, and high-resolution transmission electron microscopy, respectively. In this study, we achieved a 74% enhancement in TC at higher temperature (100 °C) of base fluid EG by incorporating 1.0 vol. % of amorphous-Al{sub 2}O{sub 3}, whereas 52% and 37% enhancement is accomplished by adding γ- and α-Al{sub 2}O{sub 3} NPs, respectively. The amorphous phase of NPs appears to have good TC enhancement in nanofluids as compared to crystalline Al{sub 2}O{sub 3}. In a nutshell, these results are demonstrating the potential consequences of Al{sub 2}O{sub 3} NPs for applications of next-generation efficient energy transfer in nanofluids.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Photo-induced oxidation and amorphization of trigonal tellurium: A means to engineer hybrid nanostructures and explore glass structure under spatial confinement

Controlled photo-induced oxidation and amorphization of elemental trigonal tellurium are achieved by laser irradiation at optical wavelengths. These processes are monitored in situ by time-resolved Raman scattering and ex situ by electron microscopies. Ultrathin TeO₂ films form on Te surfaces, as a result of irradiation, with an interface layer of amorphous Te intervening between them. It is shown that irradiation, apart from enabling the controllable transformation of bulk Te to one-dimensional nanostructures, such as Te nanotubes and hybrid core-Te/sheath-TeO₂ nanowires, causes also a series of light-driven (athermal) phase transitions involving the crystallization of the amorphous TeO₂ layers and its transformation to a multiplicity of crystalline phases including the γ-, β-, and α-TeO₂ crystalline phases. The kinetics of the above photo-induced processes is investigated by Raman scattering at various laser fluences revealing exponential and non-exponential kinetics at low and high fluence, respectively. In addition, the formation of ultrathin (less than 10 nm) layers of amorphous TeO₂ offers the possibility to explore structural transitions in 2D glasses by observing changes in the short- and medium-range structural order induced by spatial confinement.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Perpendicular magnetic anisotropy of amorphous [CoSiB/Pt]{sub N} thin films

Materials with perpendicular magnetic anisotropy (PMA) have been intensively studied for high-density nonvolatile memory such as spin-transfer-torque magnetic random access memory with low switching current density and high thermal stability. Compared with crystalline PMA multilayers, considerable works have been done on amorphous PMA multilayers because the amorphous materials are expected to have lower pinning site density as well as smaller domain wall width. This study is an overview of the PMA properties of amorphous [CoSiB/Pt]{sub N} multilayers with varying N, where the energy contribution is changed from domain wall energy to magnetostatic energy around N = 6. By measuring the field-induced domain wall motion, we obtain the creep exponent of μ = 1/4. These results in the amorphous PMA multilayers of [CoSiB/Pt]{sub N} demonstrate possible potential as a free layer for PMA-based memory devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Possible existence of two amorphous phases of D-mannitol related by a first-order transition

We report that the common polyalcohol D-mannitol may have two amorphous phases related by a first-order transition. Slightly above its glass transition temperature T{sub g} (284 K), the supercooled liquid (SCL) of D-mannitol transforms to a low-energy, apparently amorphous phase with stronger hydrogen bonds. The enthalpy of this so-called Phase X is approximately halfway between those of the known amorphous and crystalline phases, a position low for glass aging and high for crystal polymorphs. Similar to the SCL, Phase X is transparent with broad X-ray diffraction and Raman scattering; upon temperature cycling, it exhibits a glass-transition-like change of heat capacity. On fast heating, Phase X transforms back to the SCL near T{sub g} + 50 K, enabling a determination of their equilibrium temperature. The presence of D-sorbitol as a plasticizer enables observation of a first-order transition from the SCL to Phase X entirely in the liquid state (liquid-liquid transition). The transition from D-mannitol’s SCL to Phase X has intriguing similarities with the formation of the glacial phase of triphenyl phosphite (TPP) and the conversion from high-density to low-density amorphous ice, both studied intensely in the context of polyamorphism. All three processes occur near T{sub g} with substantial enthalpy decrease toward the crystalline phases; the processes in water and D-mannitol both strengthen the hydrogen bonds. In contrast to TPP, D-mannitol’s Phase X forms more rapidly and can transform back to the SCL. These features make D-mannitol a valuable new model for understanding polyamorphism.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Solid state amorphization of nanocrystalline nickel by cryogenic laser shock peening

In this study, complete solid state amorphization in nanocrystalline nickel has been achieved through cryogenic laser shock peening (CLSP). High resolution transmission electron microscopy has revealed the complete amorphous structure of the sample after CLSP processing. A molecular dynamic model has been used to investigate material behavior during the shock loading and the effects of nanoscale grain boundaries on the amorphization process. It has been found that the initial nanoscale grain boundaries increase the initial Gibbs free energy before plastic deformation and also serve as dislocation emission sources during plastic deformation to contribute to defect density increase, leading to the amorphization of pure nanocrystalline nickel.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

An amorphous phase formation at palladium / silicon oxide (Pd/SiO{sub x}) interface through electron irradiation - electronic excitation process

A Pd-Si amorphous phase was formed at a palladium/silicon oxide (Pd/SiO{sub x}) interface at room temperature by electron irradiation at acceleration voltages ranging between 25 kV and 200 kV. Solid-state amorphization was stimulated without the electron knock-on effects. The total dose required for the solid-state amorphization decreases with decreasing acceleration voltage. This is the first report on electron irradiation induced metallic amorphous formation caused by the electronic excitation at metal/silicon oxide interface.

36 MATERIALS SCIENCE↗
DOE OSTI2016

First principles prediction of amorphous phases using evolutionary algorithms

We discuss the efficacy of evolutionary method for the purpose of structural analysis of amorphous solids. At present, ab initio molecular dynamics (MD) based melt-quench technique is used and this deterministic approach has proven to be successful to study amorphous materials. We show that a stochastic approach motivated by Darwinian evolution can also be used to simulate amorphous structures. Applying this method, in conjunction with density functional theory based electronic, ionic and cell relaxation, we re-investigate two well known amorphous semiconductors, namely silicon and indium gallium zinc oxide. We find that characteristic structural parameters like average bond length and bond angle are within ∼2% of those reported by ab initio MD calculations and experimental studies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Thermodynamically controlled crystallization of glucose pentaacetates from amorphous phase

The α and β glucose pentaacetates are known sugar derivatives, which can be potentially used as stabilizers of amorphous phase of active ingredients of drugs (API). In the present work, crystallization behavior of equimolar mixture of α and β form in comparison to both pure anomers is revealed. It was shown that despite the same molecular interactions and similar molecular dynamics, crystallization from amorphous phase is significantly suppressed in equimolar mixture. Time dependent X-ray diffraction studies confirmed higher stability of the quenched amorphous equimolar mixture. Its tendency to crystallization is about 10 times lower than for pure anomers. Calorimetric studies revealed that the α and β anomers don’t form solid solutions and have eutectic point for x{sub α} = 0.625. Suppressed crystallization tendency in the mixture is probably caused by the altered thermodynamics of the system. The factors such as difference of free energy between crystalline and amorphous state or altered configurational entropy are probably responsible for the inhibitory effect.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

In situ TEM study of the transitions between crystalline Si and nonstoichiometric amorphous oxide under bipolar voltage bias

The electrical responses, either structurally or chemically, at the interface between a SiO 2 thin film and a single crystalline Si substrate are an important research subject in Si-based devices. Dielectric breakdown-induced epitaxial migration of Si into SiO 2 has been reported as a degradation mechanism in field effect transistors (FETs). Here, we show a direct observation of electric field induced conversion of single crystalline Si to nonstoichiometric amorphous oxide starting from the Si/native oxide interface using in situ transmission electron microscopy (TEM). We further show that nanocrystalline Si can form in the amorphous oxide under a voltage bias of reversed polarity. Electron energy loss spectroscopy and energy dispersive X-ray spectroscopy analyses indicate that the observed amorphization process was caused by the oxidation of Si and the recrystallization process was caused by the reduction of nonstoichiometric amorphous silicon oxide. Furthermore, both transitions are a result of field-driven directional migration of oxygen which originally comes from its native oxide layer.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Effects of carbon concentration on the local atomic structure of amorphous GST

Ge-Sb-Te (GST) alloys are leading phase-change materials for data storage due to the fast phase transition between amorphous and crystalline states. Ongoing research aims at improving the stability of the amorphous phase to improve retention. This can be accomplished by the introduction of carbon as a dopant to Ge 2 Sb 2 Te 5 , which is known to alter the short- and mid-range structure of the amorphous phase and form covalently bonded C clusters, both of which hinder crystallization. The relative importance of these processes as a function of C concentration is not known. Here we used molecular dynamics simulation based on density functional theory to study how carbon doping affects the atomic structure of GST-C. Carbon doping results in an increase in tetrahedral coordination, especially of Ge atoms, and this is known to stabilize the amorphous phase. We observe an unexpected, non-monotonous trend in the number of tetrahedral bonded Ge with the amount of carbon doping. Our simulations show an increase in the number of tetrahedral bonded Ge up to 5 at.% C, after which the number saturates and begins to decrease above 14 at.% C. The carbon atoms aggregate into clusters, mostly in the form of chains and graphene flakes, leaving less carbon to disrupt the GST matrix at higher carbon concentrations. Different degrees of carbon clustering can explain divergent experimental results for recrystallization temperature for carbon doped GST.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Reduction experiment of FeO-bearing amorphous silicate: application to origin of metallic iron in GEMS

Glass with embedded metal and sulfides (GEMS) are amorphous silicates included in anhydrous interplanetary dust particles (IDPs) and can provide information about material evolution in our early solar system. Several formation processes for GEMS have been proposed so far, but these theories are still being debated. To investigate a possible GEMS origin by reduction of interstellar silicates, we synthesized amorphous silicates with a mean GEMS composition and performed heating experiments in a reducing atmosphere. FeO-bearing amorphous silicates were heated at 923 K and 973 K for 3 hr, and at 1023 K for 1-48 hr at ambient pressure in a reducing atmosphere. Fe grains formed at the interface between the silicate and the reducing gas through a reduction. In contrast, TEM observations of natural GEMS show that metallic grains are uniformly embedded in amorphous silicates. Therefore, the present study suggests that metallic inclusions in GEMS could not form as reduction products and that other formation process such as condensation or irradiation are more likely.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Role of atomic-level defects and electronic energy loss on amorphization in LiNbO 3 single crystals

Understanding complex non-equilibrium defect processes, where multiple irradiation mechanisms may take place simultaneously, is a long standing subject in material science. The separate and combined effects of elastic and inelastic energy loss are a very complicated and challenging topic. In this work, LiNbO 3 has been irradiated with 0.9 MeV Si + and 8 MeV O 3+ , which are representative of regimes where nuclear (S n ) and electronic (S e ) energy loss are dominant, respectively. The evolution of damage has been investigated by Rutherford backscattering spectrometry (RBS) in channeling configuration. Pristine samples were irradiated with 0.9 MeV Si + ions to create different pre-existing damage states. Below the threshold (S e,th = 5–6 keV nm –1 ) for amorphous track formation in this material, irradiation of the pristine samples with a highly ionizing beam of 8 MeV O 3+ ions, with nearly constant S e of about 3 keV nm –1 , induces a crystalline to amorphous phase transition at high ion fluences. In the pre-damaged samples, the electronic energy loss from the 8 MeV O 3+ ions interacts synergistically with the pre-existing damage, resulting in a rapid, non-linear increase in damage production. There is a significant reduction in the incubation fluence for rapid amorphization with the increasing amount of pre-existing damage. Here, these results highlight the important role of atomic-level defects on increasing the sensitivity of some oxides to amorphization induced by electronic energy loss. Controlling the nature and amount of pre-damage may provide a new approach to tuning optical properties for photonic device applications.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Li-ion battery material under high pressure: amorphization and enhanced conductivity of Li 4 Ti 5 O 12

Lithium titanium oxide (Li 4 Ti 5 O 12 , LTO), a 'zero-strain' anode material for lithium-ion batteries, exhibits excellent cycling performance. However, its poor conductivity highly limits its applications. Here, the structural stability and conductivity of LTO were studied using in situ high-pressure measurements and first-principles calculations. LTO underwent a pressure-induced amorphization (PIA) at 26.9 GPa. The impedance spectroscopy revealed that the conductivity of LTO improved significantly after amorphization and that the conductivity of decompressed amorphous LTO increased by an order of magnitude compared with its starting phase. Furthermore, our calculations demonstrated that the different compressibility of the LiO 6 and TiO 6 octahedra in the structure was crucial for the PIA. The amorphous phase promotes Li + diffusion and enhances its ionic conductivity by providing defects for ion migration. Our results not only provide an insight into the pressure depended structural properties of a spinel-like material, but also facilitate exploration of the interplay between PIA and conductivity.

25 ENERGY STORAGE↗
DOE OSTI2019

X-ray Studies of the Transformation from High-to Low-density Amorphous Water

Here we report about the structural evolution during the conversion from high-density amorphous ices at ambient pressure to the low-density state. Using high-energy X-ray diffraction we have monitored the transformation by following in reciprocal space the structure factor SOO(Q) and derive in real space the pair distribution function gOO(r). Heating equilibrated high-density amorphous ice (eHDA) at a fast rate (4 K/min), the transition to the low-density form occurs very rapidly, while domains of both high- and low-density coexist. On the other hand, the transition in the case of unannealed HDA (uHDA) and very-high-density amorphous ice (VHDA) is more complex and of continuous nature. The direct comparison of eHDA and uHDA indicates that the molecular structure of uHDA contains a larger amount of tetrahedral motives. The different crystallization behavior of the derived low-density amorphous (LDA) states is interpreted as emanating from an increased tetrahedral coordination present in uHDA.

amorphous ice↗
DOE OSTI2024

Structural and mechanical properties of monolayer amorphous carbon and boron nitride

Amorphous materials exhibit various characteristics that are not featured by crystals and can sometimes be tuned by their degree of disorder (DOD). Here, we report results on the mechanical properties of monolayer amorphous carbon (MAC) and monolayer amorphous boron nitride (maBN) with different DOD. The pertinent structures are obtained by kinetic-Monte-Carlo (kMC) simulations using machine-learning potentials (MLP) with density-functional-theory (DFT)-level accuracy. An intuitive order parameter, namely the areal fraction F x occupied by crystallites within the continuous random network, is proposed to describe the DOD. We find that F x captures the essence of the DOD: Samples with the same F x but different sizes and arrangements of crystallites, obtained using two distinct kMC procedures, have virtually identical radial distributions functions as well as bond-length and bond-angle distributions. Furthermore, by simulating the fracture process with molecular dynamics, we found that the mechanical responses of MAC and maBN before fracture are mainly determined by F x and are insensitive to the sizes and specific arrangements and to some extent the numbers and area distributions of the crystallites. The behavior of cracks in the two materials is analyzed and found to mainly propagate in meandering paths in the CRN region and to be influenced by crystallites in distinct ways that toughen the material. Furthermore, the present results reveal the relation between structure and mechanical properties in amorphous monolayers and may provide a universal toughening strategy for 2D materials.

2-dimensional systems↗
DOE OSTI2021

Origin of mechanical and dielectric losses from two-level systems in amorphous silicon

Amorphous silicon contains tunneling two-level systems, which are the dominant energy loss mechanisms for amorphous solids at low temperatures. These two-level systems affect both mechanical and electromagnetic oscillators and are believed to produce thermal and electromagnetic noise and energy loss. However, it is unclear whether the two-level systems that dominate mechanical and dielectric losses are the same; the former relies on the coupling between phonons and two-level systems, with an elastic field coupling constant γ while the latter depends on a two-level systems dipole moment p0, which couples to the electromagnetic field. Mechanical and dielectric loss measurements as well as structural characterization were performed on amorphous silicon thin films grown by electron beam deposition with a range of growth parameters. Samples grown at 425 °C show a large reduction of mechanical loss (34 times) and a far smaller reduction of dielectric loss (2.3 times) compared to those grown at room temperature. Additionally, mechanical loss shows lower loss for thicker films, while dielectric loss shows lower loss for thinner films. Overall, analysis of these results indicate that mechanical loss correlates with atomic density, while dielectric loss correlates with dangling-bond density, suggesting a different origin for these two energy dissipation processes in amorphous silicon.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Structural tunability and origin of two-level systems in amorphous silicon

Amorphous silicon films prepared by electron-beam evaporation have systematically and substantially greater atomic density for higher thickness, higher growth temperature, and slower deposition rate, reaching the density of crystalline Si when films of thickness greater than ~300 nm are grown at 425 °C and at <1 Å/s. Here, a combination of spectroscopic techniques provide insight into atomic disorder, local strains, dangling bonds, and nanovoids. Electron diffraction shows that the short-range order of the amorphous silicon is similar at all growth temperatures, but fluctuation electron microscopy shows that films grown above room temperature show a form of medium-range order not previously observed in amorphous silicon. Atomic disorder and local strain obtained from Raman spectroscopy are reduced with increasing growth temperature and show a nonmonotonic dependence on thickness. Dangling bond density decreases with increasing growth temperature and is only mildly dependent on thickness. Positron annihilation Doppler broadening spectroscopy and electron energy loss spectroscopy show that nanovoids, and not density variations within the network, are responsible for reduced atomic density. Specific heat and mechanical loss measurements, which quantify the density of tunneling two-level systems, in combination with the structural data, suggest that two-level systems in amorphous silicon films are associated with nanovoids and their surroundings, which are in essence loosely bonded regions where atoms are less constrained.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Effect of Sn Doping on the Crystallization Kinetics of Amorphous TlInS{sub 2} Films

The crystallization of amorphous Sn-doped TlInS{sub 2} films into three polymorphs has been studied by kinematic electron diffraction. The results demonstrate that the crystallization of 30-nm-thick amorphous films produced by thermal evaporation in high vacuum can be described by the Avrami–Kolmogorov equation: V{sub τ} = V{sub 0}[1–exp(–kτ{sup m})]. Kinematic electron diffraction patterns of the TlIn{sub 1–х}Sn{sub x}S{sub 2} films have been used to assess the effect of doping with Sn on the growth dimensionality and the activation energy for the crystallization of the amorphous films and the unit-cell parameters of the resultant crystalline materials. Doping extends the temperature range and effective activation energy for the crystallization of the amorphous films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗