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NASA NTRS1987

Electro-optical characterization of GaAs solar cells

The electro-optical characterization of gallium arsenide p/n solar cells is discussed. The objective is to identify and understand basic mechanisms which limit the performance of high efficiency gallium arsenide solar cells. The approach involves conducting photoresponse and temperature dependent current-voltage measurements, and interpretation of the data in terms of theory to determine key device parameters. Depth concentration profiles are also utilized in formulating a model to explain device performance.

Olsen, Larry C.↗

NASA NTRS1995

Multijunction InGaAs thermophotovoltaic power converter

The experimental performance of a multijunction monolithic In(0.53)Ga(0. 47)As power converter under blackbody irradiation is reported. Eight InGaAs PN junctions grown epitaxially on a semi-insulating wafer were monolithically integrated in series to boost the approximately 0.4 V photovoltage per typical InGaAs junction to over 3 volts for the 1 sq cm chip. This chip was originally designed and characterized for free-space 1.3 micron laser power beaming. This is the first report of such a multijunction TPV. This is not a traditional tandem cell in which the junctions are stacked vertically. The junctions are each about 1mm long by 1 cm wide and are laterally connected across the 1 sq cm device area. This multijunction design has the potential for lower I(sup 2)R power loss since the smaller PN junction area limits the current to one-eighth that of the equivalent surface area. In essence, the current is traded for voltage to avoid the I(sup 2)R loss, analogous to the way power utilities avoid I(sup 2)P loss in high-tension power lines, by transforming the high current, low voltage generated at a power plant into a high voltage at a low current before transmitting the power over great distances.

Wojtczuk, Steven↗

NASA NTRS1989

Impedances of electrochemically impregnated nickel electrodes as functions of potential, KOH concentration, and impregnation method

Impedances of fifteen electrodes form each of the four U.S. manufactures were measured at 0.200 V vs. the Hg/HgO reference electrode. This corresponds to a voltage of 1.145 for a Ni/H2 cell. Measurements were also made of a representative sample of these at 0.44 V. At the higher voltage, the impedances were small and very similar, but at the lower voltage there were major differences between manufacturers. Electrodes from the same manufacturers showed only small differences. The impedances of electrodes from two manufacturers were considerably different in 26 percent KOH from those in 31 percent KOH. These preliminary results seen to correlate with the limited data from earlier life testing of cells from these manufacturers. The impedances of cells being tested for Space Station Freedom are being followed, and more impendance measurements of electrodes are being performed as functions of manufacturer, voltage, electrolyte concentration, and cycle history in hopes of finding better correlations of impedance with life.

Reid, Margaret A.↗

NASA NTRS1981

Advances in high output voltage silicon solar cells

Solar cells have been fabricated from 0.1 ohm-cm, p-type silicon by means of a two-step diffusion process of emitter formation in order to delineate the factors limiting V(oc) in conventionally structured cells with the goal of achieving 700 mV. The cells are 200 microns thick and 2 x 2 cm in area with a planar front surface that has an anti-reflection coating of tantalum oxide, as well as Cr-Au-Ag contact metallization on both sides of the cell. The Cr-Au-Ag is applied over an aluminum diffused layer on the back, while it is applied through small holes in the anti-reflection coating on the front. Results show that the best of these cells exhibits an open-circuit voltage of 654 mV under AMO illumination.

Arndt, R. A.↗

NASA NTRS1999

Assessment of Selected CERES Electronic Component Survivability under Simulated Overvoltage Conditions

In August, 1998 a Clouds and the Earth's Radiant Energy System (CERES) instrument telemetry housekeeping parameter generated a yellow warning message that indicated an on-board + 15V Data Acquisition Assembly (DAA) power converter deregulation anomaly. An exhaustive investigation was undertaken to understand this anomaly and the long-term consequences which have severely reduced CERES operations on the Tropical Rainfall Measuring Mission (TRMM) spacecraft. Among investigations performed were ground tests that approximated the on-board electronic circuitry using a small quantity of flight identical components exposed to maximum spacecraft bus over-voltage conditions. These components include monolithic integrated microcircuits that perform analog signal conditioning on instrument sensor signals and an analog- to-digital converter (ADC) for the entire DAA. All microcircuit packages have either a bipolar silicon design with internal current limiting protections or have a complementary metal oxide semiconductor (CMOS) design with bias protections. Ground tests that have been running for approximately 8 months have indicated that these components are capable of withstanding as much as twice their input supply voltage ratings without noticeable performance degradation. These data provide CERES operators with confidence of being able to continue science operations over the remaining life of the TRMM mission. This paper will discuss this anomaly and some possible causes, a simulator of affected electronics, test results, prognosis for future CERES operations, and conclusions.

Chapman, John J.↗

NASA NTRS1980

The characteristics and limitations of the MPS/MMS battery charging system

A series of tests was conducted on two 12 ampere hour nickel cadmium batteries under a simulated cycle regime using the multiple voltage versus temperature levels designed into the modular power system (MPS). These tests included: battery recharge as a function of voltage control level; temperature imbalance between two parallel batteries; a shorted or partially shorted cell in one of the two parallel batteries; impedance imbalance of one of the parallel battery circuits; and disabling and enabling one of the batteries from the bus at various charge and discharge states. The results demonstrate that the eight commandable voltage versus temperature levels designed into the MPS provide a very flexible system that not only can accommodate a wide range of normal power system operation, but also provides a high degree of flexibility in responding to abnormal operating conditions.

Ford, F. E.↗

NASA NTRS2005

Series-Connected Buck Boost Regulators

A series-connected buck boost regulator (SCBBR) is an electronic circuit that bucks a power-supply voltage to a lower regulated value or boosts it to a higher regulated value. The concept of the SCBBR is a generalization of the concept of the SCBR, which was reported in "Series-Connected Boost Regulators" (LEW-15918), NASA Tech Briefs, Vol. 23, No. 7 (July 1997), page 42. Relative to prior DC-voltage-regulator concepts, the SCBBR concept can yield significant reductions in weight and increases in power-conversion efficiency in many applications in which input/output voltage ratios are relatively small and isolation is not required, as solar-array regulation or battery charging with DC-bus regulation. Usually, a DC voltage regulator is designed to include a DC-to-DC converter to reduce its power loss, size, and weight. Advances in components, increases in operating frequencies, and improved circuit topologies have led to continual increases in efficiency and/or decreases in the sizes and weights of DC voltage regulators. The primary source of inefficiency in the DC-to-DC converter portion of a voltage regulator is the conduction loss and, especially at high frequencies, the switching loss. Although improved components and topology can reduce the switching loss, the reduction is limited by the fact that the converter generally switches all the power being regulated. Like the SCBR concept, the SCBBR concept involves a circuit configuration in which only a fraction of the power is switched, so that the switching loss is reduced by an amount that is largely independent of the specific components and circuit topology used. In an SCBBR, the amount of power switched by the DC-to-DC converter is only the amount needed to make up the difference between the input and output bus voltage. The remaining majority of the power passes through the converter without being switched. The weight and power loss of a DC-to-DC converter are determined primarily by the amount of power processed. In the SCBBR, the unswitched majority of the power is passed through with very little power loss, and little if any increase in the sizes of the converter components is needed to enable the components to handle the unswitched power. As a result, the power-conversion efficiency of the regulator can be very high, as shown in the example of Figure 1. A basic SCBBR includes a DC-to-DC converter (see Figure 2). The switches and primary winding of a transformer in the converter is connected across the input bus, while the secondary winding and switches are connected in series with the output bus, so that the output voltage is the sum of the input voltage and the secondary voltage of the converter. In the breadboard SCBBR, the input voltage applied to the primary winding is switched by use of metal oxide/semiconductor field-effect transistors (MOSFETs) in a full bridge circuit; the secondary winding is center-tapped, with two MOSFET switches and diode rectifiers connected in opposed series in each leg. The sets of opposed switches and rectifiers are what enable operation in either a boost or a buck mode. In the boost mode, input voltage and current, and the output voltage and current are all positive; that is, the secondary voltage is added to the input voltage and the net output voltage can be regulated at a value equal or greater than the input voltage. In the buck mode, input voltage is still positive and the current still flows in the same direction in the secondary, but the switches are controlled such that some power flows from the secondary to the primary. The voltage across the secondary and the current into the primary are reversed. The result is that the output voltage is lower than the input voltage, and some power is recirculated from the converter secondary back to the input. Quantitatively, the advantage of an SCBBR is a direct function of the regulation range required. If, for example, a regulation range of 20 percent is required for a 500-W supply, th it suffices to design the DC-to-DC converter in the SCBBR for a power rating of only 100 W. The switching loss and size are much smaller than those of a conventional regulator that must be rated for switching of all 500 W. The reduction in size and the increase in efficiency are not directly proportional to switched-power ratio of 5:1 because the additional switches contribute some conduction loss and the input and output filters must be larger than those typically required for a 100-W converter. Nevertheless, the power loss and the size can be much smaller than those of a 500-W converter.

Birchenough, Arthur G.↗

NASA NTRS1983

Process Research on Polycrystalline Silicon Material (PROPSM)

The performance limiting mechanisms in large grain (greater than 1-2 mm in diameter) polycrystalline silicon was investigated by measuring the illuminated current voltage (I-V) characteristics of the minicell wafer set. The average short circuit current on different wafers is 3 to 14 percent lower than that of single crystal Czochralski silicon. The scatter was typically less than 3 percent. The average open circuit voltage is 20 to 60 mV less than that of single crystal silicon. The scatter in the open circuit voltage of most of the polycrystalline silicon wafers was 15 to 20 mV, although two wafers had significantly greater scatter than this value. The fill factor of both polycrystalline and single crystal silicon cells was typically in the range of 60 to 70 percent; however several polycrystalline silicon wafers have fill factor averages which are somewhat lower and have a significantly larger degree of scatter.

Culik, J. S.↗

NASA NTRS1999

Development of a Revolutionary High Speed Spindle

This report presents the development of a hydraulic motor driven spindle system to be employed for high speed machining of composite materials and metals. The spindle system is conceived to be easily retrofitted into conventional milling machines. The need for the hydraulic spindle arises because of the limitations placed on conventional electric motor driven spindles by the low cutting power and the presence of vibrational phenomena associated with voltage frequency at high rotational speeds. Also, the electric motors are usually large and expensive when power requirements are moderately high. In contrast, hydraulic motor driven spindles promise a distinct increase in spindle life over the conventional electric motor driven spindles. In this report, existing technologies applicable to spindle holder for severe operating conditions were reviewed, conceptual designs of spindle holder system were developed and evaluated, and a detailed design of an acceptable concept was conducted. Finally, a rapid prototype of the design was produced for design evaluation.

Agba, Emmanuel I.↗

NASA NTRS2012

Thrust Stand Measurements of a Conical Inductive Pulsed Plasma Thruster

Inductive Pulsed Plasma Thrusters (iPPT) are spacecraft propulsion devices in which electrical energy is capacitively stored and then discharged through an inductive coil. The thruster is electrodeless, with a time-varying current in the coil interacting with a plasma covering the face of the coil to induce a plasma current. Propellant is accelerated and expelled at a high exhaust velocity (O(10 .. 100 km/s)) by the Lorentz body force arising from the interaction of the magnetic field and the induced plasma current. While this class of thruster mitigates the life-limiting issues associated with electrode erosion, inductive pulsed plasma thrusters can suffer from both high pulse energy requirements imposed by the voltage demands of inductive propellant ionization, and low propellant utilization efficiencies. A conical coil geometry may o er higher propellant utilization efficiency over that of a at inductive coil, however an increase in propellant utilization may be met with a decrease in axial electromagnetic acceleration, and in turn, a decrease in the total axially-directed kinetic energy imparted to the propellant.

Hallock, Ashley K.↗

NASA NTRS1987

Advanced electric propulsion and space plasma contactor research

A theory of the plasma contacting process is described and experimental results obtained using three different hollow cathode-based plasma contactors are presented. The existence of a sheath across which the bulk of the voltage drop associated with the contacting process occurs is demonstrated. Test results are shown to agree with a model of a spherical, space-charge-limited double sheath. The concept of ignited mode contactor operation is discussed, which is shown to enhance contactor efficiency when it is collecting electrons. An investigation of the potentials in the plasma plumes downstream of contactors operating at typical conditions is presented. Results of tests performed on hollow cathodes operating at high interelectrode pressures (up to about 1000 Torr) on ammonia are presented and criteria that are necessary to ensure that the cathode will operate properly in this regime are presented. These results suggest that high pressure hollow cathode operation is difficult to achieve and that special care must be taken to assure that the electron emission region remains diffuse and attached to the low work function insert. Experiments conducted to verify results obtained previously using a ring cusp ion source equipped with a moveable anode are described and test results are reported. A theoretical study of hollow cathode operation at high electron emission currents is presented. Preliminary experiments using the constrained sheath optics concept to achieve ion extraction under conditions of high beam current density, low net accelerating voltage and well columniated beamlet formation are discussed.

Wilbur, Paul J.↗

NASA NTRS1979

Method of construction of a multi-cell solar array

The method of constructing a high voltage, low power, multicell solar array is described. A solar cell base region is formed in a substrate such as but not limited to silicon or sapphire. A protective coating is applied on the base and a patterned etching of the coating and base forms discrete base regions. A semiconductive junction and upper active region are formed in each base region, and defined by photolithography. Thus, discrete cells which are interconnected by metallic electrodes are formed.

Routh, D. E.↗

NASA NTRS1984

Ion extraction capabilities of two-grid accelerator systems

An experimental investigation into the ion extraction capabilities of two-grid accelerator systems common to electrostatic ion thrusters is described. This work resulted in a large body of experimental data which facilitates the selection of the accelerator system geometries and operating parameters necessary to maximize the extracted ion current. Results suggest that the impingement-limited perveance is not dramatically affected by reductions in screen hole diameter to 0.5 mm. Impingement-limited performance is shown to depend most strongly on grid separation distance, accelerator hole diameter ratio, the discharge-to-total accelerating voltage ratio, and the net-to-total accelerating voltage ratio. Results obtained at small grid separation ratios suggest a new grid operating condition where high beam current per hole levels are achieved at a specified net accelerating voltage. It is shown that this operating condition is realized at an optimum ratio of net-to-total accelerating voltage ratio which is typically quite high. The apparatus developed for this study is also shown to be well suited measuring the electron backstreaming and electrical breakdown characteristics of two-grid accelerator systems.

Rovang, D. C.↗

NASA NTRS1984

Ion extraction capabilities of two-grid accelerator systems

An experimental investigation into the ion extraction capabilities of two-grid accelerator systems common to electrostatic ion thrusters is described. A large body of experimental data which facilitates the selection of the accelerator system geometries and operating parameters necessary to maximize the extracted ion current is presented. Results suggest that the impingement-limited perveance is not dramatically affected by reductions in screen hole diameter to 0.5 mm. Impingement-limited performance is shown to depend most strongly on grid separation distance, accelerator hole diameter ratio, the discharge-to-total accelerating voltage ratio, and the net-to-total accelerating voltage ratio. Results obtained at small grid separation ratios suggest a new grid operating condition where high beam current per hole levels are achieved at a specified net accelerating voltage. It is shown that this operating condition is realized at an optimum ratio of net-to-total accelerating voltage ratio which is typically quite high.

Rovang, D. C.↗

NASA NTRS1990

Saturated fluorescence measurements of the hydroxyl radical in laminar high-pressure flames

The efficacy of laser saturated fluorescence (LSF) for OH concentration measurements in high pressure flames was studied theoretically and experimentally. Using a numerical model describing the interaction of hydroxyl with nonuniform laser excitation, the effect of pressure on the validity of the balanced cross-rate model was studied along with the sensitivity of the depopulation of the laser-coupled levels to the ratio of rate coefficients describing: (1) electronic quenching to (sup 2) Sigma (+) (v double prime greater than 0), and (2) vibrational relaxation from v double prime greater than 0 to v double prime = 0. At sufficiently high pressures and near-saturated conditions, the total population of the laser-coupled levels reaches an asymptotic value, which is insensitive to the degree of saturation. When the ratio of electronic quenching to vibrational relaxation is small and the rate of coefficients for rotational transfer in the ground and excited electronic states are nearly the same, the balanced cross-rate model remains a good approximation for all pressures. When the above ratio is large, depopulation of the laser-coupled levels becomes significant at high pressures, and thus the balanced cross-rate model no longer holds. Under these conditions, however, knowledge of the depletion of the laser-coupled levels can be used to correct the model. A combustion facility for operation up to 20 atm was developed to allow LSF measurements of OH in high pressure flames. Using this facility, partial saturation in laminar high pressure (less than or equal to 12.3 atm) C2H6/O2/N2 flames was achieved. To evaluate the limits of the balanced cross-rate model, absorption and calibrated LSF measurements at 3.1 and 6.1 atm were compared. The fluorescence voltages were calibrated with absorption measurements in an atmospheric flame and corrected for their finite sensitivity to quenching with: (1) estimated quenching rate coefficients, and (2) an in situ measurement from a technique employing two fluorescence detection geometries.

Carter, Campbell D.↗

NASA NTRS1996

Silicon Carbide Epitaxial Films Studied by Atomic Force Microscopy

Silicon carbide (SiC) holds great potential as an electronic material because of its wide band gap energy, high breakdown electric field, thermal stability, and resistance to radiation damage. Possible aerospace applications of high-temperature, high-power, or high-radiation SiC electronic devices include sensors, control electronics, and power electronics that can operate at temperatures up to 600 C and beyond. Commercially available SiC devices now include blue light-emitting diodes (LED's) and high-voltage diodes for operation up to 350 C, with other devices under development. At present, morphological defects in epitaxially grown SiC films limit their use in device applications. Research geared toward reducing the number of structural inhomogeneities can benefit from an understanding of the type and nature of problems that cause defects. The Atomic Force Microscope (AFM) has proven to be a useful tool in characterizing defects present on the surface of SiC epitaxial films. The in-house High-Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center not only extended the dopant concentration range achievable in epitaxial SiC films, but it reduced the concentration of some types of defects. Advanced structural characterization using the AFM was warranted to identify the type and structure of the remaining film defects and morphological inhomogeneities. The AFM can give quantitative information on surface topography down to molecular scales. Acquired, in part, in support of the Advanced High Temperature Engine Materials Technology Program (HITEMP), the AFM had been used previously to detect partial fiber debonding in composite material cross sections. Atomic force microscopy examination of epitaxial SiC film surfaces revealed molecular-scale details of some unwanted surface features. Growth pits propagating from defects in the substrate, and hillocks due, presumably, to existing screw dislocations in the substrates, were imaged. Away from local defects, step bunching was observed to yield step heights of hundreds of angstroms, with possible implications for the uniformity of dopants incorporated in SiC devices during fabrication. The quantitative topographic data from the AFM allow the relevant defect information to be extracted, such as the size and distribution of step bunching and the Burgers vector of screw dislocations. These atomic force microscopy results have furthered the understanding of the dynamic epitaxial SiC growth process. A model describing the observed hillock step bunching has been proposed. This cooperation between researchers involved in crystal growth, electronic device fabrication, and surface structural characterization is likely to continue as atomic force microscopy is used to improve SiC films for high-temperature electronic devices for NASA's advanced turbine engines and space power devices, as well as for future applications in the automotive industry.

Source record↗

NASA NTRS2012

Thrust Stand Measurements of a Conical Pulsed Inductive Plasma Thruster

Pulsed inductive plasma thrusters [1-3] are spacecraft propulsion devices in which electrical energy is capacitively stored and then discharged through an inductive coil. The thruster is electrodeless, with a time-varying current in the coil interacting with a plasma covering the face of the coil to induce a plasma current. Propellant is accelerated and expelled at a high exhaust velocity (O(10-100 km/s)) by the Lorentz body force arising from the interaction of the magnetic field and the induced plasma current. While this class of thruster mitigates the life-limiting issues associated with electrode erosion, pulsed inductive plasma thrusters can su er from both high pulse energy requirements imposed by the voltage demands of inductive propellant ionization, and low propellant utilization efficiencies. The Microwave Assisted Discharge Inductive Plasma Accelerator (MAD-IPA)[4], shown in Fig. 1 is a pulsed inductive plasma thruster that is able to operate at lower pulse energies by partially ionizing propellant with an electron cyclotron resonance (ECR) discharge inside a conical inductive coil whose geometry serves to potentially increase propellant and plasma plume containment relative to at coil geometries. The ECR plasma is created with the use of permanent mag- nets arranged to produce a thin resonance region along the inner surface of the coil, restricting plasma formation and, in turn, current sheet formation to areas of high magnetic coupling to the driving coil.

Hallock, Ashley K.↗

NASA NTRS2014

Characteristics of Extreme Auroral Charging Events

The highest level spacecraft charging observed in low Earth orbit (LEO) occurs when spacecraft are exposed to energetic auroral electrons. Since auroral charging has been identified as a mechanism responsible for on-orbit anomalies and even possible satellite failures it is important to consider extreme auroral charging events as design and test environments for spacecraft to be used in high inclination LEO orbits. This paper will report on studies of extreme auroral charging events using data from the SSJ/4 and SSJ/5 precipitating electron and ion sensors on the Defense Meteorology Satellite Program (DMSP) satellites. Early studies of DMSP charging to negative potentials ≥100 V focused on statistics of the electron environment responsible for charging. Later statistical studies of auroral charging have generally focused on solar cycle dependence of charging behavior and magnitude of the maximum potential and duration of the charging events. We extend these studies to focus on more detailed investigations of extreme charging event characteristics that are required to evaluate potential threats to spacecraft systems. A collection of example auroral charging events is assembled from the DMSP data set using the criteria that "extreme auroral charging" is defined as periods with spacecraft negative potentials ≥400 V. Specific characteristics to be treated include (but are not limited to) maximum and mean potentials, time history of spacecraft potentials through the events, total charging duration and the time potentials exceed voltage thresholds, frame charging/discharging rates, and information on geographic and geomagnetic latitudes at which the events are observed. Finally, we will comment on the implications of these studies for potential auroral charging risks to the International Space Station.

Minow, Joseph I.↗